JP2000252267A5 - - Google Patents
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- Publication number
- JP2000252267A5 JP2000252267A5 JP1999365010A JP36501099A JP2000252267A5 JP 2000252267 A5 JP2000252267 A5 JP 2000252267A5 JP 1999365010 A JP1999365010 A JP 1999365010A JP 36501099 A JP36501099 A JP 36501099A JP 2000252267 A5 JP2000252267 A5 JP 2000252267A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- base
- power supply
- lower electrode
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36501099A JP4463363B2 (ja) | 1998-12-28 | 1999-12-22 | 下部電極構造およびそれを用いたプラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37202798 | 1998-12-28 | ||
| JP10-372027 | 1998-12-28 | ||
| JP36501099A JP4463363B2 (ja) | 1998-12-28 | 1999-12-22 | 下部電極構造およびそれを用いたプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000252267A JP2000252267A (ja) | 2000-09-14 |
| JP2000252267A5 true JP2000252267A5 (https=) | 2007-03-01 |
| JP4463363B2 JP4463363B2 (ja) | 2010-05-19 |
Family
ID=26581633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36501099A Expired - Fee Related JP4463363B2 (ja) | 1998-12-28 | 1999-12-22 | 下部電極構造およびそれを用いたプラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4463363B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10152101A1 (de) * | 2001-10-23 | 2003-05-22 | Infineon Technologies Ag | Elektrostatische Wafer-Haltevorrichtung |
| US7736528B2 (en) | 2005-10-12 | 2010-06-15 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
| JP4361045B2 (ja) * | 2005-10-12 | 2009-11-11 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US9083182B2 (en) * | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US9355776B2 (en) * | 2014-04-09 | 2016-05-31 | Applied Materials, Inc. | Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes |
| US10991591B2 (en) | 2018-01-29 | 2021-04-27 | Ulvac, Inc. | Reactive ion etching apparatus |
| JP7474651B2 (ja) * | 2019-09-09 | 2024-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113270355B (zh) * | 2021-05-14 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 静电吸附承载装置 |
| CN115050627B (zh) * | 2022-06-29 | 2025-09-16 | 北京北方华创微电子装备有限公司 | 用于半导体工艺腔室的上电极组件及该半导体工艺腔室 |
-
1999
- 1999-12-22 JP JP36501099A patent/JP4463363B2/ja not_active Expired - Fee Related
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