JP4463363B2 - 下部電極構造およびそれを用いたプラズマ処理装置 - Google Patents

下部電極構造およびそれを用いたプラズマ処理装置 Download PDF

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Publication number
JP4463363B2
JP4463363B2 JP36501099A JP36501099A JP4463363B2 JP 4463363 B2 JP4463363 B2 JP 4463363B2 JP 36501099 A JP36501099 A JP 36501099A JP 36501099 A JP36501099 A JP 36501099A JP 4463363 B2 JP4463363 B2 JP 4463363B2
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Prior art keywords
wiring
base
lower electrode
dielectric layer
electrode structure
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Expired - Fee Related
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JP36501099A
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Japanese (ja)
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JP2000252267A (ja
JP2000252267A5 (https=
Inventor
千博 田口
龍 野中
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP36501099A priority Critical patent/JP4463363B2/ja
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Publication of JP2000252267A5 publication Critical patent/JP2000252267A5/ja
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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP36501099A 1998-12-28 1999-12-22 下部電極構造およびそれを用いたプラズマ処理装置 Expired - Fee Related JP4463363B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36501099A JP4463363B2 (ja) 1998-12-28 1999-12-22 下部電極構造およびそれを用いたプラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP37202798 1998-12-28
JP10-372027 1998-12-28
JP36501099A JP4463363B2 (ja) 1998-12-28 1999-12-22 下部電極構造およびそれを用いたプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2000252267A JP2000252267A (ja) 2000-09-14
JP2000252267A5 JP2000252267A5 (https=) 2007-03-01
JP4463363B2 true JP4463363B2 (ja) 2010-05-19

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JP36501099A Expired - Fee Related JP4463363B2 (ja) 1998-12-28 1999-12-22 下部電極構造およびそれを用いたプラズマ処理装置

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152101A1 (de) * 2001-10-23 2003-05-22 Infineon Technologies Ag Elektrostatische Wafer-Haltevorrichtung
US7736528B2 (en) 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
JP4361045B2 (ja) * 2005-10-12 2009-11-11 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US9083182B2 (en) * 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9355776B2 (en) * 2014-04-09 2016-05-31 Applied Materials, Inc. Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes
US10991591B2 (en) 2018-01-29 2021-04-27 Ulvac, Inc. Reactive ion etching apparatus
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
CN113270355B (zh) * 2021-05-14 2024-05-17 北京北方华创微电子装备有限公司 静电吸附承载装置
CN115050627B (zh) * 2022-06-29 2025-09-16 北京北方华创微电子装备有限公司 用于半导体工艺腔室的上电极组件及该半导体工艺腔室

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JP2000252267A (ja) 2000-09-14

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