JP2021522687A - 流量分布調節のための万能調整可能遮蔽板 - Google Patents
流量分布調節のための万能調整可能遮蔽板 Download PDFInfo
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- JP2021522687A JP2021522687A JP2020560481A JP2020560481A JP2021522687A JP 2021522687 A JP2021522687 A JP 2021522687A JP 2020560481 A JP2020560481 A JP 2020560481A JP 2020560481 A JP2020560481 A JP 2020560481A JP 2021522687 A JP2021522687 A JP 2021522687A
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- 238000009826 distribution Methods 0.000 title claims description 31
- 238000012545 processing Methods 0.000 claims abstract description 78
- 230000007246 mechanism Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 16
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 238000013461 design Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Chemical Vapour Deposition (AREA)
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Abstract
【選択図】図3
Description
第1の処理ガスを選択することと、
第1の処理ガスの選択に応じて、面板に対して相対的に遮蔽板を位置付けることであって、遮蔽板の位置によって第1の処理ガスの所望の流量分布が実現されるように、遮蔽板を位置付けることと、
第1の処理ガスを処理チャンバ内に流すこと
を含む。
Claims (15)
- ガス分配アセンブリであって、
面板と、
遮蔽板と、
前記遮蔽板に結合されており、前記面板と前記遮蔽板との間の間隔を設定するよう動作可能な調整機構と
を備える、ガス分配アセンブリ。 - 前記遮蔽板は複数の部材を含む、請求項1に記載のガス分配アセンブリ。
- 前記複数の部材は、前記遮蔽板の中心軸の周りに同心円状に配置された本体を含む、請求項2に記載のガス分配アセンブリ。
- 前記複数の部材の各部材間の間隔は、他の前記部材に対して個別に調整可能である、請求項2に記載のガス分配アセンブリ。
- 前記調整機構はアクチュエータを含む、請求項1に記載のガス分配アセンブリ。
- 前記調整機構はスペーサを含む、請求項1に記載のガス分配アセンブリ。
- 前記遮蔽板の近傍に配置されたセンサをさらに備える、請求項1に記載のガス分配アセンブリ。
- 前記遮蔽板及び前記調整機構に結合された延長部をさらに備え、ガス流路が前記延長部の内部で画定される、請求項1に記載のガス分配アセンブリ。
- 処理チャンバであって、
チャンバ本体と、
前記チャンバ本体に結合されたリッドであって、処理空間が前記チャンバ本体及び前記リッドの内部で画定される、リッドと、
前記処理空間の内部に配置された基板支持体と、
前記リッドに結合されたガス分配アセンブリであって、
面板、
遮蔽板、及び
前記遮蔽板に結合されており、前記面板と前記遮蔽板との間の間隔を設定するよう動作可能な調整機構
を含む、ガス分配アセンブリと
を備える、処理チャンバ。 - 前記遮蔽板が複数の部材を有する、請求項9に記載の処理チャンバ。
- 前記複数の部材は、前記遮蔽板の中心軸の周りに同心円状に配置された本体を含む、請求項10に記載の処理チャンバ。
- 前記複数の部材の各部材間の間隔は、他の前記部材に対して個別に調整可能である、請求項10に記載の処理チャンバ。
- 基板を処理する方法であって、
第1の処理ガスを選択することと、
前記第1の処理ガスの前記選択に応じて、面板に対して相対的に遮蔽板を位置付けることであって、前記遮蔽板の前記位置によって前記第1の処理ガスの所望の流量分布が実現されるように、前記遮蔽板を位置付けることと、
前記第1の処理ガスを処理チャンバ内に流すこと
を含む、基板を処理する方法。 - 第2の処理ガスを選択することと、
前記第2の処理ガスの前記選択に応じて、前記面板に対して相対的に前記遮蔽板を位置付けることであって、前記遮蔽板の前記位置によって前記第2の処理ガスの所望の流量分布が実現されるように、前記遮蔽板を位置付けることと、
前記第2の処理ガスを処理チャンバ内に流すこと
をさらに含む、請求項13に記載の方法。 - コントローラ及びアクチュエータが、前記面板に対して相対的に前記遮蔽板を位置付けるよう構成される、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201841016760 | 2018-05-03 | ||
IN201841016760 | 2018-05-03 | ||
PCT/US2019/025481 WO2019212676A1 (en) | 2018-05-03 | 2019-04-03 | Universal adjustable blocker plate for flow distribution tuning |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021522687A true JP2021522687A (ja) | 2021-08-30 |
JPWO2019212676A5 JPWO2019212676A5 (ja) | 2022-04-13 |
Family
ID=68386142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020560481A Pending JP2021522687A (ja) | 2018-05-03 | 2019-04-03 | 流量分布調節のための万能調整可能遮蔽板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210159094A1 (ja) |
JP (1) | JP2021522687A (ja) |
KR (1) | KR20200139841A (ja) |
CN (1) | CN112074938A (ja) |
SG (1) | SG11202010210VA (ja) |
TW (2) | TW201947676A (ja) |
WO (1) | WO2019212676A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01283391A (ja) * | 1988-05-09 | 1989-11-14 | Tokyo Electron Ltd | エッチング装置 |
JPH0714822A (ja) * | 1993-06-15 | 1995-01-17 | Nec Corp | 半導体装置の製造装置 |
JP2001053065A (ja) * | 1999-08-13 | 2001-02-23 | Nec Kyushu Ltd | プラズマ処理装置 |
JP2003529926A (ja) * | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
US20160097120A1 (en) * | 2014-10-07 | 2016-04-07 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
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DE2610556C2 (de) * | 1976-03-12 | 1978-02-02 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt |
US6537420B2 (en) * | 1999-12-17 | 2003-03-25 | Texas Instruments Incorporated | Method and apparatus for restricting process fluid flow within a showerhead assembly |
KR100400044B1 (ko) * | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드 |
US7524532B2 (en) * | 2002-04-22 | 2009-04-28 | Aixtron Ag | Process for depositing thin layers on a substrate in a process chamber of adjustable height |
KR100614801B1 (ko) * | 2004-07-05 | 2006-08-22 | 삼성전자주식회사 | 반도체 장치의 막 형성방법 |
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KR102102787B1 (ko) * | 2013-12-17 | 2020-04-22 | 삼성전자주식회사 | 기판 처리 장치 및 블록커 플레이트 어셈블리 |
JP6880076B2 (ja) * | 2016-06-03 | 2021-06-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板距離の監視 |
US10640865B2 (en) * | 2016-09-09 | 2020-05-05 | Samsung Electronics Co., Ltd. | Substrate processing apparatus and method for manufacturing semiconductor device using the same |
-
2019
- 2019-04-03 SG SG11202010210VA patent/SG11202010210VA/en unknown
- 2019-04-03 CN CN201980029240.5A patent/CN112074938A/zh active Pending
- 2019-04-03 JP JP2020560481A patent/JP2021522687A/ja active Pending
- 2019-04-03 WO PCT/US2019/025481 patent/WO2019212676A1/en active Application Filing
- 2019-04-03 KR KR1020207034626A patent/KR20200139841A/ko not_active Application Discontinuation
- 2019-04-03 US US17/046,916 patent/US20210159094A1/en active Pending
- 2019-04-10 TW TW108112425A patent/TW201947676A/zh unknown
- 2019-04-10 TW TW111214268U patent/TWM644385U/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01283391A (ja) * | 1988-05-09 | 1989-11-14 | Tokyo Electron Ltd | エッチング装置 |
JPH0714822A (ja) * | 1993-06-15 | 1995-01-17 | Nec Corp | 半導体装置の製造装置 |
JP2001053065A (ja) * | 1999-08-13 | 2001-02-23 | Nec Kyushu Ltd | プラズマ処理装置 |
JP2003529926A (ja) * | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
US20160097120A1 (en) * | 2014-10-07 | 2016-04-07 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
Also Published As
Publication number | Publication date |
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US20210159094A1 (en) | 2021-05-27 |
SG11202010210VA (en) | 2020-11-27 |
CN112074938A (zh) | 2020-12-11 |
TW201947676A (zh) | 2019-12-16 |
KR20200139841A (ko) | 2020-12-14 |
WO2019212676A1 (en) | 2019-11-07 |
TWM644385U (zh) | 2023-08-01 |
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