JP2021512469A5 - - Google Patents

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JP2021512469A5
JP2021512469A5 JP2020542130A JP2020542130A JP2021512469A5 JP 2021512469 A5 JP2021512469 A5 JP 2021512469A5 JP 2020542130 A JP2020542130 A JP 2020542130A JP 2020542130 A JP2020542130 A JP 2020542130A JP 2021512469 A5 JP2021512469 A5 JP 2021512469A5
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electron source
operating
bias
temperature
emission point
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JP2020542130A
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Japanese (ja)
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JP2021512469A (ja
JP6959457B2 (ja
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Priority claimed from CN201811190748.7A external-priority patent/CN111048372B/zh
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JP2020542130A 2018-10-12 2018-12-27 電子源動作方法 Active JP6959457B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201811190748.7 2018-10-12
CN201811190748.7A CN111048372B (zh) 2018-10-12 2018-10-12 一种电子源工作方法
PCT/CN2018/124331 WO2020073512A1 (zh) 2018-10-12 2018-12-27 一种电子源工作方法

Publications (3)

Publication Number Publication Date
JP2021512469A JP2021512469A (ja) 2021-05-13
JP2021512469A5 true JP2021512469A5 (enExample) 2021-06-24
JP6959457B2 JP6959457B2 (ja) 2021-11-02

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JP2020542130A Active JP6959457B2 (ja) 2018-10-12 2018-12-27 電子源動作方法

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US (1) US11430625B2 (enExample)
EP (1) EP3770944A4 (enExample)
JP (1) JP6959457B2 (enExample)
KR (1) KR102469975B1 (enExample)
CN (1) CN111048372B (enExample)
TW (2) TW202020919A (enExample)
WO (1) WO2020073512A1 (enExample)

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5912533A (ja) 1982-07-12 1984-01-23 Hitachi Ltd 拡散補給形電子線源
JPH07192669A (ja) 1993-12-27 1995-07-28 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法
US6281626B1 (en) * 1998-03-24 2001-08-28 Casio Computer Co., Ltd. Cold emission electrode method of manufacturing the same and display device using the same
US6573642B1 (en) * 2000-01-26 2003-06-03 Motorola, Inc. Field emission device and method for the conditioning thereof
JP2003100244A (ja) * 2001-09-26 2003-04-04 Jeol Ltd 電子ビーム源
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
CN102394204B (zh) 2008-03-19 2014-10-08 清华大学 场发射电子源
JP2011065790A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 電子源、電子源の製造方法及び電子放出方法
JP5455700B2 (ja) 2010-02-18 2014-03-26 株式会社日立ハイテクノロジーズ 電界放出電子銃及びその制御方法
JP5363413B2 (ja) 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
US8736170B1 (en) * 2011-02-22 2014-05-27 Fei Company Stable cold field emission electron source
CN102789947B (zh) 2011-05-16 2015-06-17 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN102789946B (zh) * 2011-05-16 2016-01-13 中国电子科技集团公司第三十八研究所 粒子源
CN102842474B (zh) * 2011-06-22 2015-11-25 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN102629538B (zh) * 2012-04-13 2014-03-19 吴江炀晟阴极材料有限公司 具有低逸出功和高化学稳定性的电极材料
US8952605B2 (en) 2012-07-03 2015-02-10 National Institute For Materials Science Metal hexaboride cold field emitter, method of fabricating same, and electron gun
CN104704601B (zh) * 2012-10-12 2017-06-23 株式会社日立高新技术 电子源的制造方法
JP6266458B2 (ja) * 2013-08-09 2018-01-24 株式会社日立ハイテクサイエンス イリジウムティップ、ガス電界電離イオン源、集束イオンビーム装置、電子源、電子顕微鏡、電子ビーム応用分析装置、イオン電子複合ビーム装置、走査プローブ顕微鏡、およびマスク修正装置
CN105140091B (zh) * 2015-07-27 2017-05-31 北京中科科仪股份有限公司 一种场发射电子枪烘烤装置和一种电子枪室的烘烤方法
US10133181B2 (en) 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

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