CN111048372B - 一种电子源工作方法 - Google Patents

一种电子源工作方法 Download PDF

Info

Publication number
CN111048372B
CN111048372B CN201811190748.7A CN201811190748A CN111048372B CN 111048372 B CN111048372 B CN 111048372B CN 201811190748 A CN201811190748 A CN 201811190748A CN 111048372 B CN111048372 B CN 111048372B
Authority
CN
China
Prior art keywords
electron source
temperature
emission point
emission
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811190748.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN111048372A (zh
Inventor
刘华荣
靳学明
戚玉轩
王学慧
李艺晶
王俊听
郑春宁
钱庆
罗婷婷
董中林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 38 Research Institute
Original Assignee
CETC 38 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CN201811190748.7A priority Critical patent/CN111048372B/zh
Application filed by CETC 38 Research Institute filed Critical CETC 38 Research Institute
Priority to EP18936479.7A priority patent/EP3770944A4/en
Priority to JP2020542130A priority patent/JP6959457B2/ja
Priority to US16/966,910 priority patent/US11430625B2/en
Priority to PCT/CN2018/124331 priority patent/WO2020073512A1/zh
Priority to KR1020207022430A priority patent/KR102469975B1/ko
Priority to TW108136469A priority patent/TW202020919A/zh
Priority to TW108136929A priority patent/TWI729527B/zh
Publication of CN111048372A publication Critical patent/CN111048372A/zh
Application granted granted Critical
Publication of CN111048372B publication Critical patent/CN111048372B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201811190748.7A 2018-10-12 2018-10-12 一种电子源工作方法 Active CN111048372B (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201811190748.7A CN111048372B (zh) 2018-10-12 2018-10-12 一种电子源工作方法
JP2020542130A JP6959457B2 (ja) 2018-10-12 2018-12-27 電子源動作方法
US16/966,910 US11430625B2 (en) 2018-10-12 2018-12-27 Electron source operating method
PCT/CN2018/124331 WO2020073512A1 (zh) 2018-10-12 2018-12-27 一种电子源工作方法
EP18936479.7A EP3770944A4 (en) 2018-10-12 2018-12-27 OPERATING PROCESS OF AN ELECTRON SOURCE
KR1020207022430A KR102469975B1 (ko) 2018-10-12 2018-12-27 전자 소스 동작 방법
TW108136469A TW202020919A (zh) 2018-10-12 2019-10-08 電子源工作方法
TW108136929A TWI729527B (zh) 2018-10-12 2019-10-14 電子源工作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811190748.7A CN111048372B (zh) 2018-10-12 2018-10-12 一种电子源工作方法

Publications (2)

Publication Number Publication Date
CN111048372A CN111048372A (zh) 2020-04-21
CN111048372B true CN111048372B (zh) 2021-04-27

Family

ID=70164171

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811190748.7A Active CN111048372B (zh) 2018-10-12 2018-10-12 一种电子源工作方法

Country Status (7)

Country Link
US (1) US11430625B2 (enExample)
EP (1) EP3770944A4 (enExample)
JP (1) JP6959457B2 (enExample)
KR (1) KR102469975B1 (enExample)
CN (1) CN111048372B (enExample)
TW (2) TW202020919A (enExample)
WO (1) WO2020073512A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573642B1 (en) * 2000-01-26 2003-06-03 Motorola, Inc. Field emission device and method for the conditioning thereof
CN102629538A (zh) * 2012-04-13 2012-08-08 吴江炀晟阴极材料有限公司 具有低逸出功和高化学稳定性的电极材料
CN102651295A (zh) * 2011-02-22 2012-08-29 Fei公司 稳定冷场发射电子源
CN102789947A (zh) * 2011-05-16 2012-11-21 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN104347335A (zh) * 2013-08-09 2015-02-11 日本株式会社日立高新技术科学 铱针尖、及使用铱针尖的离子源、电子源、显微镜和装置
CN104704601A (zh) * 2012-10-12 2015-06-10 株式会社日立高新技术 电子源的制造方法
CN105140091A (zh) * 2015-07-27 2015-12-09 北京中科科仪股份有限公司 一种场发射电子枪烘烤装置和一种电子枪室的烘烤方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5912533A (ja) 1982-07-12 1984-01-23 Hitachi Ltd 拡散補給形電子線源
JPH07192669A (ja) 1993-12-27 1995-07-28 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法
US6281626B1 (en) * 1998-03-24 2001-08-28 Casio Computer Co., Ltd. Cold emission electrode method of manufacturing the same and display device using the same
JP2003100244A (ja) * 2001-09-26 2003-04-04 Jeol Ltd 電子ビーム源
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
CN102394204B (zh) 2008-03-19 2014-10-08 清华大学 场发射电子源
JP2011065790A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 電子源、電子源の製造方法及び電子放出方法
JP5455700B2 (ja) 2010-02-18 2014-03-26 株式会社日立ハイテクノロジーズ 電界放出電子銃及びその制御方法
JP5363413B2 (ja) 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
CN102789946B (zh) * 2011-05-16 2016-01-13 中国电子科技集团公司第三十八研究所 粒子源
CN102842474B (zh) * 2011-06-22 2015-11-25 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
US8952605B2 (en) 2012-07-03 2015-02-10 National Institute For Materials Science Metal hexaboride cold field emitter, method of fabricating same, and electron gun
US10133181B2 (en) 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573642B1 (en) * 2000-01-26 2003-06-03 Motorola, Inc. Field emission device and method for the conditioning thereof
CN102651295A (zh) * 2011-02-22 2012-08-29 Fei公司 稳定冷场发射电子源
CN102789947A (zh) * 2011-05-16 2012-11-21 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN102629538A (zh) * 2012-04-13 2012-08-08 吴江炀晟阴极材料有限公司 具有低逸出功和高化学稳定性的电极材料
CN104704601A (zh) * 2012-10-12 2015-06-10 株式会社日立高新技术 电子源的制造方法
CN104347335A (zh) * 2013-08-09 2015-02-11 日本株式会社日立高新技术科学 铱针尖、及使用铱针尖的离子源、电子源、显微镜和装置
CN105140091A (zh) * 2015-07-27 2015-12-09 北京中科科仪股份有限公司 一种场发射电子枪烘烤装置和一种电子枪室的烘烤方法

Also Published As

Publication number Publication date
TW202020919A (zh) 2020-06-01
US20210050172A1 (en) 2021-02-18
US11430625B2 (en) 2022-08-30
TWI729527B (zh) 2021-06-01
JP2021512469A (ja) 2021-05-13
EP3770944A4 (en) 2021-08-11
KR20200105891A (ko) 2020-09-09
JP6959457B2 (ja) 2021-11-02
KR102469975B1 (ko) 2022-11-23
EP3770944A1 (en) 2021-01-27
CN111048372A (zh) 2020-04-21
TW202015088A (zh) 2020-04-16
WO2020073512A1 (zh) 2020-04-16

Similar Documents

Publication Publication Date Title
JP5301168B2 (ja) 冷電界エミッタ
CN111048372B (zh) 一种电子源工作方法
CN111048382B (zh) 电子源制造方法
JP6952907B2 (ja) 電子源及び電子銃
TW201737285A (zh) 間接加熱式陰極離子源與用於離子源室內的斥拒極
CN111048373B (zh) 一种电子源再生方法
JP2010257854A (ja) イオンビーム装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant