KR102469975B1 - 전자 소스 동작 방법 - Google Patents

전자 소스 동작 방법 Download PDF

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KR102469975B1
KR102469975B1 KR1020207022430A KR20207022430A KR102469975B1 KR 102469975 B1 KR102469975 B1 KR 102469975B1 KR 1020207022430 A KR1020207022430 A KR 1020207022430A KR 20207022430 A KR20207022430 A KR 20207022430A KR 102469975 B1 KR102469975 B1 KR 102469975B1
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South Korea
Prior art keywords
electron source
temperature
emission
bias
operate
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Korean (ko)
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KR20200105891A (ko
Inventor
후아롱 류
슈에밍 진
유슈안 치
슈에후이 왕
이징 리
준팅 왕
춘닝 쩽
칭 치안
팅팅 루오
쫑린 동
Original Assignee
38번 리서치 인스티튜트, 차이나 일렉트로닉스 테크놀로지 그룹 코포레이션
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Application filed by 38번 리서치 인스티튜트, 차이나 일렉트로닉스 테크놀로지 그룹 코포레이션 filed Critical 38번 리서치 인스티튜트, 차이나 일렉트로닉스 테크놀로지 그룹 코포레이션
Publication of KR20200105891A publication Critical patent/KR20200105891A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • H01J1/3042Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044Point emitters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/073Electron guns using field emission, photo emission, or secondary emission electron sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06341Field emission

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020207022430A 2018-10-12 2018-12-27 전자 소스 동작 방법 Active KR102469975B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201811190748.7 2018-10-12
CN201811190748.7A CN111048372B (zh) 2018-10-12 2018-10-12 一种电子源工作方法
PCT/CN2018/124331 WO2020073512A1 (zh) 2018-10-12 2018-12-27 一种电子源工作方法

Publications (2)

Publication Number Publication Date
KR20200105891A KR20200105891A (ko) 2020-09-09
KR102469975B1 true KR102469975B1 (ko) 2022-11-23

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KR1020207022430A Active KR102469975B1 (ko) 2018-10-12 2018-12-27 전자 소스 동작 방법

Country Status (7)

Country Link
US (1) US11430625B2 (enExample)
EP (1) EP3770944A4 (enExample)
JP (1) JP6959457B2 (enExample)
KR (1) KR102469975B1 (enExample)
CN (1) CN111048372B (enExample)
TW (2) TW202020919A (enExample)
WO (1) WO2020073512A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011065790A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 電子源、電子源の製造方法及び電子放出方法

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JPS5912533A (ja) 1982-07-12 1984-01-23 Hitachi Ltd 拡散補給形電子線源
JPH07192669A (ja) 1993-12-27 1995-07-28 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法
US6281626B1 (en) * 1998-03-24 2001-08-28 Casio Computer Co., Ltd. Cold emission electrode method of manufacturing the same and display device using the same
US6573642B1 (en) * 2000-01-26 2003-06-03 Motorola, Inc. Field emission device and method for the conditioning thereof
JP2003100244A (ja) * 2001-09-26 2003-04-04 Jeol Ltd 電子ビーム源
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
CN102394204B (zh) 2008-03-19 2014-10-08 清华大学 场发射电子源
JP5455700B2 (ja) 2010-02-18 2014-03-26 株式会社日立ハイテクノロジーズ 電界放出電子銃及びその制御方法
JP5363413B2 (ja) 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
US8736170B1 (en) * 2011-02-22 2014-05-27 Fei Company Stable cold field emission electron source
CN102789947B (zh) 2011-05-16 2015-06-17 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN102789946B (zh) * 2011-05-16 2016-01-13 中国电子科技集团公司第三十八研究所 粒子源
CN102842474B (zh) * 2011-06-22 2015-11-25 中国电子科技集团公司第三十八研究所 粒子源及其制造方法
CN102629538B (zh) * 2012-04-13 2014-03-19 吴江炀晟阴极材料有限公司 具有低逸出功和高化学稳定性的电极材料
US8952605B2 (en) 2012-07-03 2015-02-10 National Institute For Materials Science Metal hexaboride cold field emitter, method of fabricating same, and electron gun
CN104704601B (zh) * 2012-10-12 2017-06-23 株式会社日立高新技术 电子源的制造方法
JP6266458B2 (ja) * 2013-08-09 2018-01-24 株式会社日立ハイテクサイエンス イリジウムティップ、ガス電界電離イオン源、集束イオンビーム装置、電子源、電子顕微鏡、電子ビーム応用分析装置、イオン電子複合ビーム装置、走査プローブ顕微鏡、およびマスク修正装置
CN105140091B (zh) * 2015-07-27 2017-05-31 北京中科科仪股份有限公司 一种场发射电子枪烘烤装置和一种电子枪室的烘烤方法
US10133181B2 (en) 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011065790A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 電子源、電子源の製造方法及び電子放出方法

Also Published As

Publication number Publication date
TW202020919A (zh) 2020-06-01
US20210050172A1 (en) 2021-02-18
US11430625B2 (en) 2022-08-30
TWI729527B (zh) 2021-06-01
JP2021512469A (ja) 2021-05-13
EP3770944A4 (en) 2021-08-11
KR20200105891A (ko) 2020-09-09
JP6959457B2 (ja) 2021-11-02
EP3770944A1 (en) 2021-01-27
CN111048372A (zh) 2020-04-21
TW202015088A (zh) 2020-04-16
WO2020073512A1 (zh) 2020-04-16
CN111048372B (zh) 2021-04-27

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