JP2021510929A - 半導体部品を個片化する方法および半導体部品 - Google Patents
半導体部品を個片化する方法および半導体部品 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 298
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 13
- 239000012634 fragment Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 21
- 238000000926 separation method Methods 0.000 description 9
- 238000013467 fragmentation Methods 0.000 description 7
- 238000006062 fragmentation reaction Methods 0.000 description 7
- 230000001788 irregular Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
21 キャリア
22 半導体チップ
23 破断核
24 破断端
25 切欠き
26 側壁
27 パッシベーション層
28 上面
29 底面
30 レーザモード
31 ストリップ
32 さらなる破断核
33 部品キャリア
x 横方向
z 垂直方向
Claims (15)
- キャリア(21)を設けるステップと、
前記キャリア(21)上に少なくとも2つの半導体チップ(22)を適用するステップと、
半導体チップ(22)に面する前記キャリア(21)の側面に少なくとも1つの破断核(23)をエッチングするステップと、
前記少なくとも1つの破断核(23)に沿って前記キャリア(21)を破断することによって少なくとも2つの半導体部品(20)を個片化するステップと、
を含み、
前記少なくとも1つの破断核(23)は、少なくとも部分的に垂直方向(z)に延在し、前記垂直方向(z)は前記キャリア(21)の主延在面に垂直であり、
前記少なくとも1つの破断核(23)は、横方向(x)において前記2つの半導体チップ(22)の間に配置され、前記横方向(x)は前記キャリア(21)の主延在面に平行であり、
前記半導体部品(20)は、それぞれ前記半導体チップ(22)の少なくとも1つを含み、
前記少なくとも1つの破断核(23)の前記垂直方向(z)の広がりは、キャリア(21)の前記垂直方向(z)の広がりの1%以上である、半導体部品(20)を個片化する方法。 - 部品キャリア(33)と、
前記部品キャリア(33)上に配置される半導体チップ(22)と、
を備える半導体部品(20)であって、
前記部品キャリア(33)は、前記部品キャリア(33)の主延在面に対して横方向に延在する破断端(24)を有し、
前記破断端(24)の少なくとも1つは、少なくとも部分的に切欠き(25)を有し、前記部品キャリア(33)とは反対側の前記半導体部品(20)の上面(28)上の横方向(x)内における前記半導体部品(20)の横方向の広がりは、前記部品キャリア(33)の領域における、前記半導体部品(20)の前記横方向(x)内の横方向の広がりよりも少なくとも部分的に小さく、前記横方向(x)は、前記部品キャリア(33)の主延在面に平行であり、
前記破断端(24)は、前記切欠き(25)の領域におけるエッチング処理の痕跡を示し、
前記切欠き(25)の垂直方向(z)の広がりは、前記部品キャリア(33)の前記垂直方向(z)の広がりの1%以上であり、前記垂直方向(z)は前記部品キャリア(33)の主延在面に対して垂直である、半導体部品(20)。 - 少なくとも1つの破断核(23)または切欠き(25)の垂直方向(z)の広がりが、キャリア(21)または部品キャリア(33)の垂直方向(z)の広がりの5%以上かつ40%以下である、請求項1に記載の方法または請求項2に記載の半導体部品(20)。
- 前記破断核(23)は、プラズマエッチングによって生成される、請求項1または3に記載の方法または請求項2または3に記載の半導体部品(20)。
- 前記半導体部品(20)は、半導体レーザである、請求項1から4のいずれか一項に記載の方法または半導体部品(20)。
- 前記破断核(23)または前記切欠き(25)の前記横方向(x)の広がりは、半導体チップ(22)の前記横方向(x)の広がりよりも小さい、請求項1から5のいずれか一項に記載の方法または半導体部品(20)。
- 前記破断核(23)または前記切欠き(25)の前記横方向(x)の広がりは、半導体チップ(22)の前記横方向(x)の広がりよりも大きい、請求項1から5のいずれか一項に記載の方法または半導体部品(20)。
- 前記キャリア(21)または前記部品キャリア(33)の主延在面に平行な面において、前記破断核(23)または前記切欠き(25)の主延在方向は、前記キャリア(21)または前記部品キャリア(33)の結晶方向に対して垂直である、請求項1から7のいずれか一項に記載の方法または半導体部品(20)。
- 前記少なくとも1つの破断核(23)に沿って前記キャリア(21)を破断する前に、前記キャリア(21)が結晶方向に沿って破断する、請求項1、3、4、および8のいずれか一項に記載の方法または半導体部品(20)。
- 前記破断核(23)の形状は、非対称である、請求項1、3から4、および6から9のいずれか一項に記載の方法または半導体部品(20)。
- 前記破断核(23)は、溝の形状を有する、請求項1、3から4、および6から10のいずれか一項に記載の方法または半導体部品(20)。
- 前記溝は、側壁(26)を有し、少なくとも2つの対向する側壁(26)は、異なった形状を有する、請求項11に記載の方法または半導体部品(20)。
- 前記破断核(23)または前記切欠き(25)の前記垂直方向(z)の広がりは、一定でない、請求項1から12のいずれか一項に記載の方法または半導体部品(20)。
- パッシベーション層(27)が破断核(23)上に少なくとも部分的に適用される、請求項1から13のいずれか一項に記載の方法または半導体部品(20)。
- パッシベーション層(27)が前記破断核(23)上に部分的に適用される、請求項1、3、4、6から11、および13から14のいずれか一項に記載の方法または半導体部品(20)。
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DE102018100763.9A DE102018100763A1 (de) | 2018-01-15 | 2018-01-15 | Verfahren zum Vereinzeln von Halbleiterbauteilen und Halbleiterbauteil |
DE102018100763.9 | 2018-01-15 | ||
PCT/EP2018/097046 WO2019137816A1 (de) | 2018-01-15 | 2018-12-27 | Verfahren zum vereinzeln von halbleiterbauteilen und halbleiterbauteil |
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JP2021510929A true JP2021510929A (ja) | 2021-04-30 |
JP7328971B2 JP7328971B2 (ja) | 2023-08-17 |
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JP (1) | JP7328971B2 (ja) |
DE (1) | DE102018100763A1 (ja) |
WO (1) | WO2019137816A1 (ja) |
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- 2018-01-15 DE DE102018100763.9A patent/DE102018100763A1/de active Pending
- 2018-12-27 WO PCT/EP2018/097046 patent/WO2019137816A1/de active Application Filing
- 2018-12-27 JP JP2020537009A patent/JP7328971B2/ja active Active
- 2018-12-27 US US16/961,901 patent/US11837844B2/en active Active
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JPH08116137A (ja) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | 半導体装置の製造方法及び半導体レーザ |
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JP7328971B2 (ja) | 2023-08-17 |
US20200388985A1 (en) | 2020-12-10 |
WO2019137816A1 (de) | 2019-07-18 |
DE102018100763A1 (de) | 2019-07-18 |
US11837844B2 (en) | 2023-12-05 |
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