JP2021510011A - アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法 - Google Patents

アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法 Download PDF

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JP2021510011A
JP2021510011A JP2020547214A JP2020547214A JP2021510011A JP 2021510011 A JP2021510011 A JP 2021510011A JP 2020547214 A JP2020547214 A JP 2020547214A JP 2020547214 A JP2020547214 A JP 2020547214A JP 2021510011 A JP2021510011 A JP 2021510011A
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gel
annealing material
annealing
absorber layer
thickener
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JP2021510011A5 (enExample
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ブルベイカー，ジョシュア
キング，ジョアン
ミリロン，ベンジャミン
ノーマン，ジェイ
ロビンソン，ジェイソン
タンブッシュ，ジョン
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ファースト・ソーラー・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3234—Materials thereof being oxide semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3228—Sulfides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Application Of Or Painting With Fluid Materials (AREA)
  • Recrystallisation Techniques (AREA)
JP2020547214A 2018-03-13 2019-03-12 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法 Withdrawn JP2021510011A (ja)

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JP2022159353A JP7642594B2 (ja) 2018-03-13 2022-10-03 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法

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US201862642192P 2018-03-13 2018-03-13
US62/642,192 2018-03-13
PCT/US2019/021759 WO2019178029A1 (en) 2018-03-13 2019-03-12 Annealing materials and methods for annealing photovoltaic devices with annealing materials

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JP2022159353A Active JP7642594B2 (ja) 2018-03-13 2022-10-03 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法

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US (1) US11929447B2 (enExample)
EP (1) EP3750193B1 (enExample)
JP (2) JP2021510011A (enExample)
CN (1) CN112106208B (enExample)
MY (1) MY205480A (enExample)
WO (1) WO2019178029A1 (enExample)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
EP4020603A1 (en) 2017-12-07 2022-06-29 First Solar, Inc Method for forming a photovoltaic device with group v dopants
EP3857611B1 (en) 2018-10-24 2023-07-05 First Solar, Inc. Buffer layers for photovoltaic devices with group v doping
US11257977B2 (en) * 2020-03-03 2022-02-22 The Board Of Trustees Of The University Of Alabama Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
CN115161773B (zh) * 2022-07-15 2024-07-02 中南大学 一种大尺寸CdZnTe单晶的无损伤缺陷控制技术

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147421A (ja) * 1993-11-25 1995-06-06 Sumitomo Metal Mining Co Ltd 焼結膜の製造方法
JPH10506840A (ja) * 1994-10-06 1998-07-07 ミネソタ マイニング アンド マニュファクチャリング カンパニー 張力上昇ナイフコーティング法
JPH10303441A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk 太陽電池及びその製造方法
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
JPH1131826A (ja) * 1997-07-11 1999-02-02 Matsushita Denchi Kogyo Kk 硫化カドミウム膜の形成法および光電変換素子の製造法
JPH11251607A (ja) * 1998-03-03 1999-09-17 Mitsubishi Chemical Corp 絶縁基板の製造方法
US20100184249A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Continuous deposition process and apparatus for manufacturing cadmium telluride photovoltaic devices
JP2011515852A (ja) * 2008-03-18 2011-05-19 ソレクサント・コーポレイション 薄膜太陽電池の改善されたバックコンタクト
JP2011518942A (ja) * 2007-10-17 2011-06-30 ルション、ヤン 改善された溶液蒸着用組み立て品
WO2014036489A1 (en) * 2012-08-31 2014-03-06 First Solar Malaysia Sdn. Bhd. METHOD OF CONTROLLING THE AMOUNT OF Cu DOPING WHEN FORMING A BACK CONTACT OF A PHOTOVOLTAIC CELL
JP2014165090A (ja) * 2013-02-27 2014-09-08 Osaka Gas Co Ltd 光電変換素子用ペースト組成物、並びにそれを用いた光電変換素子用電極及び光電変換素子
JP2015035594A (ja) * 2013-08-08 2015-02-19 東京応化工業株式会社 金属カルコゲナイド分散液の製造方法、金属カルコゲナイド分散液、太陽電池用光吸収層の製造方法及び太陽電池の製造方法
JP2016149505A (ja) * 2015-02-13 2016-08-18 三菱化学株式会社 組成物、光電変換素子、太陽電池及び太陽電池モジュール
US20170170353A1 (en) * 2015-12-09 2017-06-15 First Solar, Inc. Photovoltaic devices and method of manufacturing
WO2017121830A1 (fr) * 2016-01-12 2017-07-20 Centre National De La Recherche Scientifique Solution d'ions tungstates et dispositif photovoltaïque hybride
CN107492584A (zh) * 2017-09-07 2017-12-19 北京大学深圳研究生院 一种碲化镉太阳能电池制备方法及碲化镉太阳能电池

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203383A (ja) * 1986-03-03 1987-09-08 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPS6420672A (en) * 1987-07-15 1989-01-24 Matsushita Electric Industrial Co Ltd Manufacture of photosensor
WO1997021252A1 (en) * 1995-12-07 1997-06-12 Japan Energy Corporation Method of producing photoelectric conversion device
US5994642A (en) 1996-05-28 1999-11-30 Matsushita Battery Industrial Co., Ltd. Method for preparing CdTe film and solar cell using the same
JPH104205A (ja) * 1996-06-14 1998-01-06 Matsushita Denchi Kogyo Kk 化合物半導体太陽電池の製造法
JP2005148239A (ja) 2003-11-12 2005-06-09 Ricoh Co Ltd 定着装置、および画像形成装置
JP2007263622A (ja) 2006-03-27 2007-10-11 Kyocera Mita Corp 電子写真感光体用塗布液の検査方法、管理方法および電子写真感光体の製造方法
KR101503557B1 (ko) * 2007-09-25 2015-03-17 퍼스트 솔라, 인코포레이티드 계면 층을 포함한 광기전 장치
US8334455B2 (en) * 2008-07-24 2012-12-18 First Solar, Inc. Photovoltaic devices including Mg-doped semiconductor films
US8748214B2 (en) * 2009-12-16 2014-06-10 First Solar, Inc. Method of p-type doping of cadmium telluride
US20110315221A1 (en) * 2009-12-21 2011-12-29 Alion, Inc. Methods for making thin film polycrystalline photovoltaic devices using additional chemical element and products thereof
US8720370B2 (en) * 2011-04-07 2014-05-13 Dynamic Micro System Semiconductor Equipment GmbH Methods and apparatuses for roll-on coating
EP2728623B1 (en) * 2011-06-30 2019-05-01 Kaneka Corporation Thin film solar cell and method for manufacturing same
MY174619A (en) * 2011-11-18 2020-05-02 First Solar Inc Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
US9147792B2 (en) * 2012-05-21 2015-09-29 First Solar, Inc. Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device
US20140051237A1 (en) * 2012-08-16 2014-02-20 Nthdegree Technologies Worldwide Inc. Semiconductor Ink Composition
JP2014067745A (ja) * 2012-09-24 2014-04-17 Kyocera Corp 光電変換装置の製造方法
US8697480B1 (en) 2012-11-21 2014-04-15 First Solar, Inc. Method for treating a semiconductor
JP5828592B2 (ja) 2013-06-24 2015-12-09 株式会社ニケ・ウィング 太陽電池モジュール
EP3122693A4 (en) * 2014-03-25 2017-11-22 Seungyeol Han Low-temperature curable energy transmission enhancement coatings having tunable properties including optical,hydrophobicity and abrasion resistance
US9399720B2 (en) * 2014-07-14 2016-07-26 Enki Technology, Inc. High gain durable anti-reflective coating
CN104502228B (zh) * 2014-12-15 2017-03-08 中国航空工业集团公司北京长城航空测控技术研究所 用于油液粘度在线检测传感器的测量系统和测量方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147421A (ja) * 1993-11-25 1995-06-06 Sumitomo Metal Mining Co Ltd 焼結膜の製造方法
JPH10506840A (ja) * 1994-10-06 1998-07-07 ミネソタ マイニング アンド マニュファクチャリング カンパニー 張力上昇ナイフコーティング法
JPH10303441A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk 太陽電池及びその製造方法
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
JPH1131826A (ja) * 1997-07-11 1999-02-02 Matsushita Denchi Kogyo Kk 硫化カドミウム膜の形成法および光電変換素子の製造法
JPH11251607A (ja) * 1998-03-03 1999-09-17 Mitsubishi Chemical Corp 絶縁基板の製造方法
JP2011518942A (ja) * 2007-10-17 2011-06-30 ルション、ヤン 改善された溶液蒸着用組み立て品
JP2011515852A (ja) * 2008-03-18 2011-05-19 ソレクサント・コーポレイション 薄膜太陽電池の改善されたバックコンタクト
US20100184249A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Continuous deposition process and apparatus for manufacturing cadmium telluride photovoltaic devices
WO2014036489A1 (en) * 2012-08-31 2014-03-06 First Solar Malaysia Sdn. Bhd. METHOD OF CONTROLLING THE AMOUNT OF Cu DOPING WHEN FORMING A BACK CONTACT OF A PHOTOVOLTAIC CELL
JP2014165090A (ja) * 2013-02-27 2014-09-08 Osaka Gas Co Ltd 光電変換素子用ペースト組成物、並びにそれを用いた光電変換素子用電極及び光電変換素子
JP2015035594A (ja) * 2013-08-08 2015-02-19 東京応化工業株式会社 金属カルコゲナイド分散液の製造方法、金属カルコゲナイド分散液、太陽電池用光吸収層の製造方法及び太陽電池の製造方法
JP2016149505A (ja) * 2015-02-13 2016-08-18 三菱化学株式会社 組成物、光電変換素子、太陽電池及び太陽電池モジュール
US20170170353A1 (en) * 2015-12-09 2017-06-15 First Solar, Inc. Photovoltaic devices and method of manufacturing
WO2017121830A1 (fr) * 2016-01-12 2017-07-20 Centre National De La Recherche Scientifique Solution d'ions tungstates et dispositif photovoltaïque hybride
CN107492584A (zh) * 2017-09-07 2017-12-19 北京大学深圳研究生院 一种碲化镉太阳能电池制备方法及碲化镉太阳能电池

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US20210043794A1 (en) 2021-02-11
JP2023002584A (ja) 2023-01-10
CN112106208A (zh) 2020-12-18
EP3750193B1 (en) 2022-03-09
US11929447B2 (en) 2024-03-12
CN112106208B (zh) 2024-03-19
WO2019178029A1 (en) 2019-09-19
EP3750193A1 (en) 2020-12-16
MY205480A (en) 2024-10-23
JP7642594B2 (ja) 2025-03-10

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