JP2021509536A5 - - Google Patents

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JP2021509536A5
JP2021509536A5 JP2020534980A JP2020534980A JP2021509536A5 JP 2021509536 A5 JP2021509536 A5 JP 2021509536A5 JP 2020534980 A JP2020534980 A JP 2020534980A JP 2020534980 A JP2020534980 A JP 2020534980A JP 2021509536 A5 JP2021509536 A5 JP 2021509536A5
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gate
forming
drain
fins
source
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JP7356982B2 (ja
JP2021509536A (ja
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JP2020534980A 2018-01-05 2018-12-31 縦型輸送電界効果トランジスタのための半導体構造を形成する方法、半導体構造、および集積回路 Active JP7356982B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/862,930 US10373912B2 (en) 2018-01-05 2018-01-05 Replacement metal gate processes for vertical transport field-effect transistor
US15/862,930 2018-01-05
PCT/IB2018/060735 WO2019135154A1 (en) 2018-01-05 2018-12-31 Replacement metal gate processes for vertical transport field-effect transistor

Publications (3)

Publication Number Publication Date
JP2021509536A JP2021509536A (ja) 2021-03-25
JP2021509536A5 true JP2021509536A5 (https=) 2021-05-06
JP7356982B2 JP7356982B2 (ja) 2023-10-05

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JP2020534980A Active JP7356982B2 (ja) 2018-01-05 2018-12-31 縦型輸送電界効果トランジスタのための半導体構造を形成する方法、半導体構造、および集積回路

Country Status (5)

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US (2) US10373912B2 (https=)
EP (1) EP3711098B1 (https=)
JP (1) JP7356982B2 (https=)
CN (1) CN111566820B (https=)
WO (1) WO2019135154A1 (https=)

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