JP7356982B2 - 縦型輸送電界効果トランジスタのための半導体構造を形成する方法、半導体構造、および集積回路 - Google Patents

縦型輸送電界効果トランジスタのための半導体構造を形成する方法、半導体構造、および集積回路 Download PDF

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JP7356982B2
JP7356982B2 JP2020534980A JP2020534980A JP7356982B2 JP 7356982 B2 JP7356982 B2 JP 7356982B2 JP 2020534980 A JP2020534980 A JP 2020534980A JP 2020534980 A JP2020534980 A JP 2020534980A JP 7356982 B2 JP7356982 B2 JP 7356982B2
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forming
gate
source
drain
fins
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リー、チューユン
ヤン、チュン、ウィン
バオ、ルーチャン
ジャガンナタン、ヘマンス
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    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020534980A 2018-01-05 2018-12-31 縦型輸送電界効果トランジスタのための半導体構造を形成する方法、半導体構造、および集積回路 Active JP7356982B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/862,930 US10373912B2 (en) 2018-01-05 2018-01-05 Replacement metal gate processes for vertical transport field-effect transistor
US15/862,930 2018-01-05
PCT/IB2018/060735 WO2019135154A1 (en) 2018-01-05 2018-12-31 Replacement metal gate processes for vertical transport field-effect transistor

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JP2021509536A JP2021509536A (ja) 2021-03-25
JP2021509536A5 JP2021509536A5 (https=) 2021-05-06
JP7356982B2 true JP7356982B2 (ja) 2023-10-05

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US (2) US10373912B2 (https=)
EP (1) EP3711098B1 (https=)
JP (1) JP7356982B2 (https=)
CN (1) CN111566820B (https=)
WO (1) WO2019135154A1 (https=)

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