JP2021507507A5 - - Google Patents
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- Publication number
- JP2021507507A5 JP2021507507A5 JP2020531528A JP2020531528A JP2021507507A5 JP 2021507507 A5 JP2021507507 A5 JP 2021507507A5 JP 2020531528 A JP2020531528 A JP 2020531528A JP 2020531528 A JP2020531528 A JP 2020531528A JP 2021507507 A5 JP2021507507 A5 JP 2021507507A5
- Authority
- JP
- Japan
- Prior art keywords
- vertical fin
- region
- forming
- well
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 9
- 239000002019 doping agent Substances 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 125000006850 spacer group Chemical group 0.000 claims 3
- 239000000945 filler Substances 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- -1 silicon oxide nitride Chemical class 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/843,786 US10685886B2 (en) | 2017-12-15 | 2017-12-15 | Fabrication of logic devices and power devices on the same substrate |
| US15/843,786 | 2017-12-15 | ||
| PCT/IB2018/059558 WO2019116152A1 (en) | 2017-12-15 | 2018-12-03 | Fabrication of logic devices and power devices on the same substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021507507A JP2021507507A (ja) | 2021-02-22 |
| JP2021507507A5 true JP2021507507A5 (https=) | 2021-07-26 |
| JP7271054B2 JP7271054B2 (ja) | 2023-05-11 |
Family
ID=66814713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020531528A Active JP7271054B2 (ja) | 2017-12-15 | 2018-12-03 | 基板上に論理デバイスおよびパワー・デバイスを形成する方法ならびに基板上の論理デバイスおよびパワー・デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10685886B2 (https=) |
| JP (1) | JP7271054B2 (https=) |
| CN (1) | CN111433905B (https=) |
| DE (1) | DE112018005623T5 (https=) |
| GB (1) | GB2582087B (https=) |
| WO (1) | WO2019116152A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8895327B1 (en) * | 2011-12-09 | 2014-11-25 | Suvolta, Inc. | Tipless transistors, short-tip transistors, and methods and circuits therefor |
| US10832975B2 (en) * | 2018-06-12 | 2020-11-10 | International Business Machines Corporation | Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement |
| US10916638B2 (en) * | 2018-09-18 | 2021-02-09 | International Business Machines Corporation | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance |
| US12009266B2 (en) * | 2019-12-18 | 2024-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure for fringing capacitance control |
| DE102020202038A1 (de) * | 2020-02-18 | 2021-08-19 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vertikaler Fin-Feldeffekttransistor, vertikaler Fin-Feldeffekttransistor-Anordnung und Verfahren zum Bilden eines vertikalen Fin-Feldeffekttransistors |
| US11908907B2 (en) * | 2020-12-11 | 2024-02-20 | International Business Machines Corporation | VFET contact formation |
| US11404581B2 (en) * | 2020-12-21 | 2022-08-02 | International Business Machines Corporation | Wimpy vertical transport field effect transistor with dipole liners |
| JP7844983B2 (ja) * | 2022-03-29 | 2026-04-14 | セイコーエプソン株式会社 | 半導体装置およびパワーデバイス |
| US20240071811A1 (en) * | 2022-08-25 | 2024-02-29 | International Business Machines Corporation | Stacked fet substrate contact |
| DE102024201914A1 (de) * | 2024-03-01 | 2025-09-04 | Robert Bosch Gesellschaft mit beschränkter Haftung | Transistorchip und Verfahren zur Herstellung |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241203A (en) * | 1991-07-10 | 1993-08-31 | International Business Machines Corporation | Inverse T-gate FET transistor with lightly doped source and drain region |
| US5182619A (en) * | 1991-09-03 | 1993-01-26 | Motorola, Inc. | Semiconductor device having an MOS transistor with overlapped and elevated source and drain |
| KR0144165B1 (ko) * | 1995-05-12 | 1998-07-01 | 문정환 | 인버스 티(t)형 트랜지스터의 개선된 제조방법 |
| US5637898A (en) | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
| US5960289A (en) * | 1998-06-22 | 1999-09-28 | Motorola, Inc. | Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region |
| US6218224B1 (en) | 1999-03-26 | 2001-04-17 | Advanced Micro Devices, Inc. | Nitride disposable spacer to reduce mask count in CMOS transistor formation |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US20050067630A1 (en) | 2003-09-25 | 2005-03-31 | Zhao Jian H. | Vertical junction field effect power transistor |
| JP2009088134A (ja) * | 2007-09-28 | 2009-04-23 | Elpida Memory Inc | 半導体装置、半導体装置の製造方法並びにデータ処理システム |
| US7736965B2 (en) | 2007-12-06 | 2010-06-15 | International Business Machines Corporation | Method of making a FinFET device structure having dual metal and high-k gates |
| CN101337141A (zh) * | 2008-07-25 | 2009-01-07 | 易继新 | 多分割过滤器及制作过滤纸芯的方法 |
| US8664718B2 (en) | 2011-11-30 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power MOSFETs and methods for forming the same |
| CN103367141B (zh) | 2012-04-09 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 功函数测试方法 |
| CN103371410A (zh) * | 2012-04-23 | 2013-10-30 | 南通天行健工程复合材料有限公司 | 一种蔓荆子降糖饮料及制作方法 |
| US8823096B2 (en) | 2012-06-01 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods for forming the same |
| US8981481B2 (en) * | 2012-06-28 | 2015-03-17 | Intel Corporation | High voltage three-dimensional devices having dielectric liners |
| US9362386B2 (en) * | 2013-02-27 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | FETs and methods for forming the same |
| US9331197B2 (en) | 2013-08-08 | 2016-05-03 | Cree, Inc. | Vertical power transistor device |
| US9590096B2 (en) | 2014-12-15 | 2017-03-07 | Infineon Technologies Americas Corp. | Vertical FET having reduced on-resistance |
| KR102424963B1 (ko) * | 2015-07-30 | 2022-07-25 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| US9859392B2 (en) * | 2015-09-21 | 2018-01-02 | Samsung Electronics Co., Ltd. | Integrated circuit device and method of manufacturing the same |
| US9620645B1 (en) * | 2015-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure with ultra-thin body and method for forming the same |
| US9825128B2 (en) | 2015-10-20 | 2017-11-21 | Maxpower Semiconductor, Inc. | Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings |
| US9368572B1 (en) | 2015-11-21 | 2016-06-14 | International Business Machines Corporation | Vertical transistor with air-gap spacer |
| US9741716B1 (en) | 2016-09-23 | 2017-08-22 | International Business Machines Corporation | Forming vertical and horizontal field effect transistors on the same substrate |
| JP2018073971A (ja) * | 2016-10-28 | 2018-05-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN107316837A (zh) | 2017-07-12 | 2017-11-03 | 中国科学院微电子研究所 | 一种cmos器件及其制造方法 |
-
2017
- 2017-12-15 US US15/843,786 patent/US10685886B2/en active Active
-
2018
- 2018-12-03 WO PCT/IB2018/059558 patent/WO2019116152A1/en not_active Ceased
- 2018-12-03 DE DE112018005623.6T patent/DE112018005623T5/de active Pending
- 2018-12-03 GB GB2007421.7A patent/GB2582087B/en active Active
- 2018-12-03 CN CN201880077926.7A patent/CN111433905B/zh active Active
- 2018-12-03 JP JP2020531528A patent/JP7271054B2/ja active Active
-
2020
- 2020-04-28 US US16/860,919 patent/US11244869B2/en not_active Expired - Fee Related
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