JP2021193756A - 光半導体素子、光モジュール及び光半導体素子の製造方法 - Google Patents
光半導体素子、光モジュール及び光半導体素子の製造方法 Download PDFInfo
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Abstract
Description
これらの光通信には光送受信モジュールが使用されており、伝送容量増大の要求によりさらなる高速化が求められている。また、高速ルータ装置やデータセンタは高速化や大規模化により装置内での部品実装の高密度化や消費電力の増大が進んでおり、光送受信モジュールには高速化と共に小型化と低消費電力化をも求められている。
図1は、本発明の第1実施形態に係る光半導体素子1の概略構成を示す図である。図1に示す光半導体素子1は、半導体レーザであって、直方体形状の対向する面に設けられた2つの電極に電圧が印加されることにより、発振領域101からレーザ光102を発振する。
なお、InGaAsP回折格子層43が第2半導体層であってもよい。なお、MOCVD法による回折格子層43形成後に、所望の波長となるように回折格子をエッチングにて形成してからまたMOCVD法でn型InPクラッド層44及びInGaAsPコンタクト層45を形成した。
光閉じ込め率は、対象となる領域の屈折率差が大きいほうが大きくなるため、埋め込まれていない領域と埋め込まれている領域の光閉じ込め率を比較すると、埋め込まれていない領域のほうが閉じ込め率が大きくなる。つまり、比較例と光半導体素子1と比較すると埋め込まれていない領域が大きい本実施形態のほうが全体としての光閉じ込め率が大きくなり、結果としてΓQWを大きくすることができる。
図5は、本発明の第2実施形態に係る光半導体素子2の断面図である。図5は光ファイバ通信用送信光源の1.3μm帯で発振する光半導体素子2の光軸に垂直な断面の模式図である。第2実施形態に係る光半導体素子2は、n型InP半導体基板51と、下部クラッド層52と、下部メサ構造53と、上部メサ構造54と、下部メサ構造53の両側面を埋め込む埋め込み半導体層55と、上部メサ構造54の両側面を接して覆う第1絶縁層56と、第1絶縁層56を覆う第2絶縁層57と、Ti/Pt/Auで構成されているp型電極58と、AuGe系をコンタクト電極とするn型電極59を含んで構成されている。
図6及び図7は、本発明の第3実施形態に係る光半導体素子3の断面図である。図6及び図7は光ファイバ通信用送信光源の1.3μm帯で発振する光半導体素子3の光軸に垂直な断面の模式図である。第3実施形態に係る光半導体素子3は、第1実施形態に係る光半導体素子1とは、上部メサ構造84及び埋め込み半導体層85の構成が異なることを除けば同一であるので、重複する説明は省略する。
Claims (11)
- InP半導体基板と、
前記InP半導体基板の上方に配置され、多重量子井戸層を含む、下部メサ構造と、
前記下部メサ構造上に配置される、クラッド層を含む、上部メサ構造と、
前記下部メサ構造の両側面を埋め込む、埋め込み半導体層と、
前記上部メサ構造の両側面を接して覆う、絶縁膜と、
を備える、光半導体素子であって、
前記下部メサ構造は、前記多重量子井戸層の上方に、第1半導体層を含み、
前記上部メサ構造は、前記クラッド層の下方に、前記クラッド層とは組成が異なる第2半導体層を含み、
前記第2半導体層は、回折格子層と光閉じ込め層を有し、
前記上部メサ構造と前記下部メサ構造は、互いに電気的に接続し、
前記クラッド層および前記光閉じ込め層の導電型は同じであり、
前記第1半導体層は、他の光閉じ込め層である、
ことを特徴とする、光半導体素子。 - 請求項1に記載の光半導体素子であって、
前記第2半導体層の屈折率は、前記クラッド層の屈折率より高い、
ことを特徴とする、光半導体素子。 - 請求項1又は2に記載の光半導体素子であって、
前記第2半導体層は、電子ストップ層をさらに有する、
ことを特徴とする、光半導体素子。 - 請求項1乃至3のいずれか一項に記載の光半導体素子であって、
前記クラッド層は、InP層であり、
前記第2半導体層のうち少なくとも一層はP元素を含む多元素からなる層である、
ことを特徴とする、光半導体素子。 - 請求項1乃至4のいずれか一項に記載の光半導体素子であって、
前記第1半導体層は、光閉じ込め層である、
ことを特徴とする、光半導体素子。 - 請求項1乃至5のいずれか一項に記載の光半導体素子であって、
前記多重量子井戸層は、Al元素を含む多元素からなる層である、
ことを特徴とする、光半導体素子。 - 請求項6に記載の光半導体素子であって、
前記第1半導体層は、Al元素を含む多元素からなる層である、
ことを特徴とする、光半導体素子。 - 請求項1乃至7のいずれか一項に記載の光半導体素子が、複数並んで、前記InP半導体基板上に配置される、光半導体素子。
- 請求項8に記載の光半導体素子であって、
隣り合う前記光半導体素子の間に配置される前記埋め込み半導体層を分離するアイソレーション溝を、備える、
ことを特徴とする、光半導体素子。 - InP半導体基板に、多重量子井戸層及び第1半導体層を順に含む下部半導体多層と、第2半導体層及びクラッド層を順に含む上部半導体多層と、を積層する、半導体多層積層工程と、
光導波路の延伸方向に延びる第1マスクを前記上部半導体多層に形成し、前記第1マスクを用いて、前記上部半導体多層のうち前記第1マスクの外側にある部分を除去して、上部メサ構造を形成する、上部メサ構造形成工程と、
前記下部半導体多層のうち前記上部メサ構造の上面及び側面を囲む第2マスクの外側にある部分を除去して、下部メサ構造を形成する、下部メサ構造形成工程と、
前記下部メサ構造の両側の側面を、埋め込み半導体層にて埋め込む、埋め込み工程と、
前記上部メサ構造の両側の側面と、前記埋め込み半導体層の上面とを、絶縁膜にて接して覆う、絶縁膜形成工程と、
を備える、光半導体素子の製造方法であって、
前記第2半導体層は、前記クラッド層とは組成が異なり、
前記第2半導体層は、回折格子層と光閉じ込め層を有し、
前記上部メサ構造と前記下部メサ構造は、互いに電気的に接続し、
前記クラッド層および前記光閉じ込め層の導電型は同じであり、
前記第1半導体層は、他の光閉じ込め層である、
ことを特徴とする、光半導体素子の製造方法。 - 請求項1乃至9のいずれか一項に記載の半導体光素子と、
前記半導体光素子から出射される光を集光するレンズと、を備えた
ことを特徴とする光モジュール。
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