JP2021163917A5 - - Google Patents

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Publication number
JP2021163917A5
JP2021163917A5 JP2020066610A JP2020066610A JP2021163917A5 JP 2021163917 A5 JP2021163917 A5 JP 2021163917A5 JP 2020066610 A JP2020066610 A JP 2020066610A JP 2020066610 A JP2020066610 A JP 2020066610A JP 2021163917 A5 JP2021163917 A5 JP 2021163917A5
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JP
Japan
Prior art keywords
channel mos
switch circuit
functional block
mos transistors
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020066610A
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English (en)
Japanese (ja)
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JP2021163917A (ja
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Publication date
Application filed filed Critical
Priority to JP2020066610A priority Critical patent/JP2021163917A/ja
Priority claimed from JP2020066610A external-priority patent/JP2021163917A/ja
Priority to US17/182,085 priority patent/US20210313984A1/en
Publication of JP2021163917A publication Critical patent/JP2021163917A/ja
Publication of JP2021163917A5 publication Critical patent/JP2021163917A5/ja
Pending legal-status Critical Current

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JP2020066610A 2020-04-02 2020-04-02 半導体装置 Pending JP2021163917A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020066610A JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置
US17/182,085 US20210313984A1 (en) 2020-04-02 2021-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020066610A JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2021163917A JP2021163917A (ja) 2021-10-11
JP2021163917A5 true JP2021163917A5 (https=) 2022-07-26

Family

ID=77921920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020066610A Pending JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置

Country Status (2)

Country Link
US (1) US20210313984A1 (https=)
JP (1) JP2021163917A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7660486B2 (ja) 2021-11-15 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06139373A (ja) * 1992-10-27 1994-05-20 Hitachi Ltd 半導体装置
US6285213B1 (en) * 1997-11-19 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device
JP3693911B2 (ja) * 2000-11-17 2005-09-14 シャープ株式会社 半導体集積回路
JP2003168735A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体集積回路装置
JP4496069B2 (ja) * 2004-12-20 2010-07-07 株式会社東芝 Ｍｏｓ型半導体集積回路装置
JP4911988B2 (ja) * 2006-02-24 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置
JP2009088387A (ja) * 2007-10-02 2009-04-23 Renesas Technology Corp 半導体装置
JP2010113654A (ja) * 2008-11-10 2010-05-20 Seiko Epson Corp 半導体集積回路
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
WO2014157019A1 (en) * 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9000834B2 (en) * 2013-06-05 2015-04-07 Via Technologies, Inc. Digital power gating with global voltage shift
US9300292B2 (en) * 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor

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