JP2021163917A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2021163917A
JP2021163917A JP2020066610A JP2020066610A JP2021163917A JP 2021163917 A JP2021163917 A JP 2021163917A JP 2020066610 A JP2020066610 A JP 2020066610A JP 2020066610 A JP2020066610 A JP 2020066610A JP 2021163917 A JP2021163917 A JP 2021163917A
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JP
Japan
Prior art keywords
type mos
channel type
switch circuit
circuit
mos transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020066610A
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English (en)
Japanese (ja)
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JP2021163917A5 (https=
Inventor
誠 東
Makoto Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2020066610A priority Critical patent/JP2021163917A/ja
Priority to US17/182,085 priority patent/US20210313984A1/en
Publication of JP2021163917A publication Critical patent/JP2021163917A/ja
Publication of JP2021163917A5 publication Critical patent/JP2021163917A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2020066610A 2020-04-02 2020-04-02 半導体装置 Pending JP2021163917A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020066610A JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置
US17/182,085 US20210313984A1 (en) 2020-04-02 2021-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020066610A JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2021163917A true JP2021163917A (ja) 2021-10-11
JP2021163917A5 JP2021163917A5 (https=) 2022-07-26

Family

ID=77921920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020066610A Pending JP2021163917A (ja) 2020-04-02 2020-04-02 半導体装置

Country Status (2)

Country Link
US (1) US20210313984A1 (https=)
JP (1) JP2021163917A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7660486B2 (ja) 2021-11-15 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06139373A (ja) * 1992-10-27 1994-05-20 Hitachi Ltd 半導体装置
JP2002158576A (ja) * 2000-11-17 2002-05-31 Sharp Corp 半導体集積回路
JP2007228420A (ja) * 2006-02-24 2007-09-06 Renesas Technology Corp 半導体装置
JP2010113654A (ja) * 2008-11-10 2010-05-20 Seiko Epson Corp 半導体集積回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285213B1 (en) * 1997-11-19 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device
JP2003168735A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体集積回路装置
JP4496069B2 (ja) * 2004-12-20 2010-07-07 株式会社東芝 Ｍｏｓ型半導体集積回路装置
JP2009088387A (ja) * 2007-10-02 2009-04-23 Renesas Technology Corp 半導体装置
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
WO2014157019A1 (en) * 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9000834B2 (en) * 2013-06-05 2015-04-07 Via Technologies, Inc. Digital power gating with global voltage shift
US9300292B2 (en) * 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06139373A (ja) * 1992-10-27 1994-05-20 Hitachi Ltd 半導体装置
JP2002158576A (ja) * 2000-11-17 2002-05-31 Sharp Corp 半導体集積回路
JP2007228420A (ja) * 2006-02-24 2007-09-06 Renesas Technology Corp 半導体装置
JP2010113654A (ja) * 2008-11-10 2010-05-20 Seiko Epson Corp 半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7660486B2 (ja) 2021-11-15 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20210313984A1 (en) 2021-10-07

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