JP2021163834A - セラミック電子部品およびその製造方法 - Google Patents
セラミック電子部品およびその製造方法 Download PDFInfo
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- JP2021163834A JP2021163834A JP2020062961A JP2020062961A JP2021163834A JP 2021163834 A JP2021163834 A JP 2021163834A JP 2020062961 A JP2020062961 A JP 2020062961A JP 2020062961 A JP2020062961 A JP 2020062961A JP 2021163834 A JP2021163834 A JP 2021163834A
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Abstract
【解決手段】 セラミック電子部品は、セラミックを主成分とする誘電体層と、内部電極層と、が交互に積層された積層構造と、前記積層構造の積層方向の上面及び下面に設けられたカバー層と、を備える積層チップを備え、前記カバー層は、多孔質部と、前記多孔質部の周囲を取り囲む周辺領域と、を有し、前記多孔質部におけるポア率は、前記周辺領域の少なくとも一部の領域におけるポア率よりも高く、かつ、1%以上である。
【選択図】 図2
Description
図1は、実施形態に係る積層セラミックコンデンサ100の部分断面斜視図である。図2は、図1のA−A線断面図である。図3は、図1のB−B線断面図である。図1〜図3で例示するように、積層セラミックコンデンサ100は、略直方体形状を有する積層チップ10と、積層チップ10のいずれかの対向する2端面に設けられた外部電極20a,20bとを備える。なお、積層チップ10の当該2端面以外の4面のうち、積層方向の上面および下面以外の2面を側面と称する。外部電極20a,20bは、積層チップ10の積層方向の上面、下面および2側面に延在している。ただし、外部電極20a,20bは、互いに離間している。
まず、誘電体層11を形成するための誘電体材料を用意する。誘電体材料は、誘電体層11の主成分セラミックを含む。誘電体層11に含まれるAサイト元素およびBサイト元素は、通常はABO3の粒子の焼結体の形で誘電体層11に含まれる。例えば、BaTiO3は、ペロブスカイト構造を有する正方晶化合物であって、高い誘電率を示す。このBaTiO3は、一般的に、二酸化チタンなどのチタン原料と炭酸バリウムなどのバリウム原料とを反応させてチタン酸バリウムを合成することで得ることができる。誘電体層11の主成分セラミックの合成方法としては、従来種々の方法が知られており、例えば固相法、ゾル−ゲル法、水熱法等が知られている。本実施形態においては、これらのいずれも採用することができる。
次に、原料粉末作製工程で得られた誘電体材料に、ポリビニルブチラール(PVB)樹脂等のバインダと、エタノール、トルエン等の有機溶剤と、可塑剤とを加えて湿式混合する。得られたスラリーを使用して、例えばダイコータ法やドクターブレード法により、基材上に例えば厚み0.8μm以下の帯状の誘電体グリーンシート51を塗工して乾燥させる。
このようにして得られたセラミック積層体を、N2(窒素)雰囲気で脱バインダ処理した後に外部電極20a,20bの下地となるNiペーストをディップ法で塗布し、酸素分圧10−5〜10−8atmの還元雰囲気中で1100〜1300℃で10分〜2時間焼成する。焼成によって、内部電極層12の主成分金属(例えばNi)がカバー層13へと拡散し、第2部分P2が緻密化する。
その後、N2ガス雰囲気中で600℃〜1000℃で再酸化処理を行ってもよい。
その後、めっき処理により、外部電極20a,20bに、Cu,Ni,Sn等の金属コーティングを行ってもよい。
多孔質部13aのポア率と、周辺領域13bの第1部分P1、第2部分P2及び第3部分P3のポア率と、を変えた積層セラミックコンデンサ100をそれぞれ100個作製した。表1に示すように、実施例1では、多孔質部13aのポア率、周辺領域13bの第1部分P1及び第3部分P3のポア率、並びに第2部分P2のポア率をそれぞれ1.0%、1.0%、および0.7%とし、実施例2では、1.2%、1.1%、および1.0%とし、実施例3では、2.4%、1.4%、および1.2%とし、実施例4では、1.4%、0.2%、および0.2%とし、実施例5では、15%、0.3%、および0.2%とし、実施例6では、19%、0.5%、および0.3%とした。また、実施例1〜3では、積層方向におけるカバー層13の厚みTを180μmとし、積層方向における第1部分P1の厚みT1を18μmとし、積層方向における第2部分P2の厚みT2を20μmとし、長さ方向における第3部分P3の厚みT3を18μmとした。実施例4〜6では、積層方向におけるカバー層13の厚みTを180μmとし、積層方向における第1部分P1の厚みT1を18μmとし、積層方向における第2部分P2の厚みT2を18μmとし、長さ方向における第3部分P3の厚みT3を18μmとした。
表1に示すように、比較例1及び2では、多孔質部13aのポア率をそれぞれ0.3%及び0.6%及とし、周辺領域13bの第1部分P1及び第3部分P3のポア率をそれぞれ0.2%及び0.6%とし、周辺領域13bの第2部分P2のポア率をそれぞれ0.2%及び0.3%とし、他の条件は実施例1〜3と同じにした。また、比較例3及び4では、多孔質部13aのポア率をそれぞれ0.1%及び0.5%及とし、周辺領域13bの第1部分P1及び第3部分P3のポア率をそれぞれ0.1%及び0.2%とし、周辺領域13bの第2部分P2のポア率をそれぞれ0.1%及び0.2%とし、他の条件は実施例4〜6と同じにした。
実施例1〜6及び比較例1〜4のサンプルについて、外部から衝撃を加え、クラックが容量領域へ到達したか否かを確認した。衝撃の深さは、ファインセラミックスの硬さ試験方法の規格であるJIS R1610により形成したくぼみ部を傷つけることなく断面研磨、観察することにより、容量領域までクラック伸展が到達したかを判断した。
実施例1〜3のサンプルを500個作製し、耐湿試験を行った。各サンプルに、相対湿度95%で10Vの電圧を印加し、500時間保持し、その後に取り出してIR計で直流抵抗を計測し、1MΩ以下となった場合に不良とし、不良となったサンプルの数をカウントした。
実施例4〜6のサンプルを100個作製し、多孔質部13aと周辺領域13bの第1部分P1との界面、多孔質部13aと第2部分P2との界面、又は、多孔質部13aと第3部分P3との界面にクラックが発生していないかを確認した。
表5に示すように、多孔質部13aのポア率を8%、10%、12%、および14%とし、周辺領域13bの第1部分P1及び第3部分P3のポア率を0.2%、0.6%、1.0%、及び1.4%とし、周辺領域13bの第2部分P2のポア率を0.2%、0.2%、0.2%及び0.3%とした積層セラミックコンデンサ100をそれぞれ500個作製した。積層方向におけるカバー層13の厚みは180μmであり、積層方向における第1部分P1の厚みT1は18μmであり、積層方向における第2部分P2の厚みT2は20μmであり、外部電極20a,20bが対向する方向における第3部分P3の厚みT3は18μmである。
実施例7〜10の各サンプル500個に対して、高温環境で負荷試験を行った。各サンプルに、105℃環境で10Vの電圧を印加し、100時間保持し、その後に取り出してIR計で直流抵抗を計測し、1MΩ以下となった場合に不良とし、不良となったサンプルの数をカウントした。
多孔質部13aのポア率と、周辺領域13bの第1部分P1、第2部分P2及び第3部分P3のポア率と、積層方向におけるカバー層13の厚みT、第1部分P1の厚みT1、および第2部分P2の厚みT2と、長さ方向における第3部分P3の厚みT3と、を変えた積層セラミックコンデンサ100をそれぞれ600個作製した。
実施例11〜15それぞれのサンプル100個に対して、実施例1〜6及び比較例1〜4と同様の条件で衝撃試験を行った。
クラックが発生していない実施例11〜15のサンプルに対して、上記の実施例7〜10と同様の条件で、耐めっき液性を調べた。
表9に示すように、実施例16では、第1平均昇温速度R1を400℃/時間とし、第2平均昇温速度R2を20000℃/時間とした。昇温速度比(R2/R1)は50である。また、実施例17では、第1平均昇温速度R1を400℃/時間とし、第2平均昇温速度R2を30000℃/時間とした。昇温速度比(R2/R1)は、75である。
比較例5では、第1平均昇温速度R1を400℃/時間とし、第2平均昇温速度R2を1000℃/時間とした。昇温速度比(R2/R1)は2.5である。また、比較例6では、第1平均昇温速度R1を400℃/時間とし、第2平均昇温速度R2を10000℃/時間とした。昇温速度比(R2/R1)は、25である。
11 誘電体層
12 内部電極層
13 カバー層
13a 多孔質部
13b 周辺領域
14 容量領域
16 サイドマージン領域
20a,20b 外部電極
100 積層セラミックコンデンサ
P1 第1部分
P2 第2部分
P3 第3部分
Claims (6)
- セラミックを主成分とする誘電体層と、内部電極層と、が交互に積層された積層構造と、前記積層構造の積層方向の上面及び下面に設けられたカバー層と、を備える積層チップを備え、
前記カバー層は、多孔質部と、前記多孔質部の周囲を取り囲む周辺領域と、を有し、
前記多孔質部におけるポア率は、前記周辺領域の少なくとも一部の領域におけるポア率よりも高く、かつ、1%以上である、
ことを特徴とするセラミック電子部品。 - 前記多孔質部におけるポア率は、15%以下である、
ことを特徴とする請求項1に記載のセラミック電子部品。 - 前記積層チップは、略直方体形状を有し、積層された複数の前記内部電極層が交互に対向する2端面に露出するように形成され、
前記周辺領域は、前記積層方向において前記多孔質部よりも外側にある第1部分と、前記積層方向において前記多孔質部よりも内側にある第2部分と、前記2端面が対向する方向において前記多孔質部を挟む1対の第3部分と、前記積層方向及び前記対向する方向と直交する方向において前記多孔質部を挟む1対の第4部分と、を含み、
前記第2部分のポア率は、0〜1%である、
ことを特徴とする請求項1又は請求項2に記載のセラミック電子部品。 - 前記第1部分および前記第3部分におけるポア率は、それぞれ、0〜1%である、
ことを特徴とする請求項3に記載のセラミック電子部品。 - 前記カバー層の前記積層方向における厚みをTとし、前記第1部分の前記積層方向における厚みをT1とし、前記第2部分の前記積層方向における厚みをT2とし、前記第3部分の前記対向する方向における厚みをT3とした場合に、
0.03≦T1/T≦0.31、
0.03≦T2/T≦0.20、および
0.03≦T3/T≦0.31である、
ことを特徴とする請求項3又は請求項4に記載のセラミック電子部品。 - セラミック誘電体層グリーンシートと、内部電極層形成用導電ペーストと、を交互に積層し、最外層をカバーシートとすることでセラミック積層体を形成し、
前記セラミック積層体を焼成することで積層チップを形成し、
前記焼成において、焼成開始から第1時間までの第1平均昇温速度R1は400℃/時間以上であり、前記第1時間から第2時間までの第2平均昇温速度R2は20000℃/時間以上であり、前記第1平均昇温速度R1に対する前記第2平均昇温速度R2の比率(R2/R1)は、50以上である、
ことを特徴とするセラミック電子部品の製造方法。
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