JP2021158320A5 - - Google Patents
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- JP2021158320A5 JP2021158320A5 JP2020060351A JP2020060351A JP2021158320A5 JP 2021158320 A5 JP2021158320 A5 JP 2021158320A5 JP 2020060351 A JP2020060351 A JP 2020060351A JP 2020060351 A JP2020060351 A JP 2020060351A JP 2021158320 A5 JP2021158320 A5 JP 2021158320A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- electrode
- opening
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020060351A JP2021158320A (ja) | 2020-03-30 | 2020-03-30 | 半導体装置及びその製造方法、機器 |
| US17/214,637 US11728441B2 (en) | 2020-03-30 | 2021-03-26 | Semiconductor apparatus and manufacturing method thereof, and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020060351A JP2021158320A (ja) | 2020-03-30 | 2020-03-30 | 半導体装置及びその製造方法、機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021158320A JP2021158320A (ja) | 2021-10-07 |
| JP2021158320A5 true JP2021158320A5 (enExample) | 2023-04-05 |
Family
ID=77856478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020060351A Pending JP2021158320A (ja) | 2020-03-30 | 2020-03-30 | 半導体装置及びその製造方法、機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US11728441B2 (enExample) |
| JP (1) | JP2021158320A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023099398A (ja) * | 2022-01-01 | 2023-07-13 | キヤノン株式会社 | 光電変換装置、撮像システム、光検出システム、および移動体 |
| US20250142983A1 (en) * | 2023-10-30 | 2025-05-01 | Globalfoundries Singapore Pte. Ltd. | Single-photon avalanche diodes with hybrid trench isolation structures |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116014A (ja) * | 1995-10-20 | 1997-05-02 | Nippon Steel Corp | 半導体装置の製造方法 |
| US20080246152A1 (en) * | 2007-04-04 | 2008-10-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with bonding pad |
| US8502335B2 (en) * | 2009-07-29 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AlCu Process |
| JP6124502B2 (ja) | 2012-02-29 | 2017-05-10 | キヤノン株式会社 | 固体撮像装置およびその製造方法 |
| US8709854B2 (en) * | 2012-05-10 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside structure and methods for BSI image sensors |
| JP6128787B2 (ja) | 2012-09-28 | 2017-05-17 | キヤノン株式会社 | 半導体装置 |
| JP6041607B2 (ja) | 2012-09-28 | 2016-12-14 | キヤノン株式会社 | 半導体装置の製造方法 |
| US9142581B2 (en) * | 2012-11-05 | 2015-09-22 | Omnivision Technologies, Inc. | Die seal ring for integrated circuit system with stacked device wafers |
| JP2014183116A (ja) * | 2013-03-18 | 2014-09-29 | Asahi Kasei Electronics Co Ltd | 半導体装置の製造方法及び半導体装置 |
| JP6308727B2 (ja) * | 2013-06-13 | 2018-04-11 | キヤノン株式会社 | 電子デバイスの製造方法 |
| TWI676279B (zh) * | 2013-10-04 | 2019-11-01 | 新力股份有限公司 | 半導體裝置及固體攝像元件 |
| JP5950888B2 (ja) * | 2013-11-19 | 2016-07-13 | 冨士薬品工業株式会社 | 固体撮像素子の製造方法 |
| TWI604565B (zh) * | 2015-08-04 | 2017-11-01 | 精材科技股份有限公司 | 一種感測晶片封裝體及其製造方法 |
| US10297631B2 (en) * | 2016-01-29 | 2019-05-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal block and bond pad structure |
| CN108140577B (zh) * | 2016-02-23 | 2022-09-09 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
| JP7178605B2 (ja) * | 2017-03-22 | 2022-11-28 | パナソニックＩｐマネジメント株式会社 | 固体撮像装置 |
| KR20250025522A (ko) * | 2017-04-04 | 2025-02-21 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 장치 및 전자 기기 |
| US11411037B2 (en) * | 2017-04-04 | 2022-08-09 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic apparatus including coupling structures for electrically interconnecting stacked semiconductor substrates |
| KR102695382B1 (ko) * | 2017-07-05 | 2024-08-14 | 아우스터, 인크. | 전자적으로 스캔되는 방출기 어레이 및 동기화된 센서 어레이를 갖는 광 레인징 장치 |
| JP7039310B2 (ja) * | 2018-02-09 | 2022-03-22 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| DE102019124181B4 (de) * | 2018-09-28 | 2023-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vereinzelungsverfahren für gestapelte Halbleiter-Bauelemente sowie gestapelte Halbleitervorrichtung |
-
2020
- 2020-03-30 JP JP2020060351A patent/JP2021158320A/ja active Pending
-
2021
- 2021-03-26 US US17/214,637 patent/US11728441B2/en active Active
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