JP2021158320A - 半導体装置及びその製造方法、機器 - Google Patents

半導体装置及びその製造方法、機器 Download PDF

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Publication number
JP2021158320A
JP2021158320A JP2020060351A JP2020060351A JP2021158320A JP 2021158320 A JP2021158320 A JP 2021158320A JP 2020060351 A JP2020060351 A JP 2020060351A JP 2020060351 A JP2020060351 A JP 2020060351A JP 2021158320 A JP2021158320 A JP 2021158320A
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Japan
Prior art keywords
opening
electrode
semiconductor layer
semiconductor device
etching
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Pending
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JP2020060351A
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English (en)
Japanese (ja)
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JP2021158320A5 (enExample
Inventor
秀輝 林
Hideki Hayashi
秀輝 林
旬史 岩田
Junji Iwata
旬史 岩田
慶大 鳥居
Keita Torii
慶大 鳥居
悠輔 藤堂
Yusuke Todo
悠輔 藤堂
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020060351A priority Critical patent/JP2021158320A/ja
Priority to US17/214,637 priority patent/US11728441B2/en
Publication of JP2021158320A publication Critical patent/JP2021158320A/ja
Publication of JP2021158320A5 publication Critical patent/JP2021158320A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020060351A 2020-03-30 2020-03-30 半導体装置及びその製造方法、機器 Pending JP2021158320A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020060351A JP2021158320A (ja) 2020-03-30 2020-03-30 半導体装置及びその製造方法、機器
US17/214,637 US11728441B2 (en) 2020-03-30 2021-03-26 Semiconductor apparatus and manufacturing method thereof, and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020060351A JP2021158320A (ja) 2020-03-30 2020-03-30 半導体装置及びその製造方法、機器

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JP2021158320A true JP2021158320A (ja) 2021-10-07
JP2021158320A5 JP2021158320A5 (enExample) 2023-04-05

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US (1) US11728441B2 (enExample)
JP (1) JP2021158320A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023099398A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、撮像システム、光検出システム、および移動体

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250142983A1 (en) * 2023-10-30 2025-05-01 Globalfoundries Singapore Pte. Ltd. Single-photon avalanche diodes with hybrid trench isolation structures

Citations (8)

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JPH09116014A (ja) * 1995-10-20 1997-05-02 Nippon Steel Corp 半導体装置の製造方法
JP2011035399A (ja) * 2009-07-29 2011-02-17 Taiwan Semiconductor Manufacturing Co Ltd ＡｌＣｕプロセスのＣＭＯＳイメージセンサーの大ビアボンディングパッドのアプリケーション
JP2014183116A (ja) * 2013-03-18 2014-09-29 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
JP2015002193A (ja) * 2013-06-13 2015-01-05 キヤノン株式会社 電子デバイスの製造方法
JP2015099840A (ja) * 2013-11-19 2015-05-28 冨士薬品工業株式会社 固体撮像素子の製造方法
WO2018186196A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2018160667A (ja) * 2017-03-22 2018-10-11 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2019140524A (ja) * 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置及び撮像システム

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US20080246152A1 (en) * 2007-04-04 2008-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with bonding pad
JP6124502B2 (ja) 2012-02-29 2017-05-10 キヤノン株式会社 固体撮像装置およびその製造方法
US8709854B2 (en) * 2012-05-10 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure and methods for BSI image sensors
JP6041607B2 (ja) 2012-09-28 2016-12-14 キヤノン株式会社 半導体装置の製造方法
JP6128787B2 (ja) 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
US9142581B2 (en) * 2012-11-05 2015-09-22 Omnivision Technologies, Inc. Die seal ring for integrated circuit system with stacked device wafers
TWI676279B (zh) * 2013-10-04 2019-11-01 新力股份有限公司 半導體裝置及固體攝像元件
TWI604565B (zh) * 2015-08-04 2017-11-01 精材科技股份有限公司 一種感測晶片封裝體及其製造方法
US10297631B2 (en) * 2016-01-29 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Metal block and bond pad structure
US10777507B2 (en) * 2016-02-23 2020-09-15 Renesas Electronics Corporation Semiconductor device including a pad and a wiring line arranged for bringing a probe into contact with the pad and method of manufacturing the same
US10998369B2 (en) * 2017-04-04 2021-05-04 Sony Semiconductor Solutions Corporation Solid-state imaging device having an electric coupling structure
IL271765B2 (en) * 2017-07-05 2024-03-01 Ouster Inc Light ranging device with electronically scanned emitter array and synchronized sensor array
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116014A (ja) * 1995-10-20 1997-05-02 Nippon Steel Corp 半導体装置の製造方法
JP2011035399A (ja) * 2009-07-29 2011-02-17 Taiwan Semiconductor Manufacturing Co Ltd ＡｌＣｕプロセスのＣＭＯＳイメージセンサーの大ビアボンディングパッドのアプリケーション
JP2014183116A (ja) * 2013-03-18 2014-09-29 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
JP2015002193A (ja) * 2013-06-13 2015-01-05 キヤノン株式会社 電子デバイスの製造方法
JP2015099840A (ja) * 2013-11-19 2015-05-28 冨士薬品工業株式会社 固体撮像素子の製造方法
JP2018160667A (ja) * 2017-03-22 2018-10-11 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2018186196A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2019140524A (ja) * 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置及び撮像システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023099398A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、撮像システム、光検出システム、および移動体

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US20210305439A1 (en) 2021-09-30

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