JP2021144848A - セラミックヒータ - Google Patents
セラミックヒータ Download PDFInfo
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- JP2021144848A JP2021144848A JP2020042336A JP2020042336A JP2021144848A JP 2021144848 A JP2021144848 A JP 2021144848A JP 2020042336 A JP2020042336 A JP 2020042336A JP 2020042336 A JP2020042336 A JP 2020042336A JP 2021144848 A JP2021144848 A JP 2021144848A
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- Prior art keywords
- hole
- resistance heating
- ceramic plate
- electrode
- heating element
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 118
- 238000010438 heat treatment Methods 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 230000003014 reinforcing effect Effects 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 abstract 3
- 238000001816 cooling Methods 0.000 description 6
- 239000002003 electrode paste Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/04—Waterproof or air-tight seals for heaters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設され、厚さ方向に貫通するビア用貫通穴を有する平面電極と、
前記セラミックプレートに埋設された抵抗発熱体と、
前記抵抗発熱体から前記ビア用貫通穴に向かって設けられた導電性の第1ビアと、
前記ビア用貫通穴から前記抵抗発熱体とは反対側に向かって設けられた導電性の第2ビアと、
前記ビア用貫通穴の内側にて前記ビア用貫通穴の内周面から離れて設けられ、前記第1ビアと前記第2ビアとを電気的に連結する導電性の連結部と、
前記ビア用貫通穴の内側にて前記連結部と前記ビア用貫通穴の内周面との間に設けられ、前記セラミックプレートと同じ材料の補強部と、
を備えたものである。
Claims (7)
- セラミックプレートと、
前記セラミックプレートに埋設され、厚さ方向に貫通するビア用貫通穴を有する平面電極と、
前記セラミックプレートに埋設された抵抗発熱体と、
前記抵抗発熱体から前記ビア用貫通穴に向かって設けられた導電性の第1ビアと、
前記ビア用貫通穴から前記抵抗発熱体とは反対側に向かって設けられた導電性の第2ビアと、
前記ビア用貫通穴の内側にて前記ビア用貫通穴の内周面から離れて設けられ、前記第1ビアと前記第2ビアとを電気的に連結する導電性の連結部と、
前記ビア用貫通穴の内側にて前記連結部と前記ビア用貫通穴の内周面との間に設けられ、前記セラミックプレートと同じ材料の補強部と、
を備えたセラミックヒータ。 - 前記抵抗発熱体は、前記セラミックプレートに設けられた複数のゾーンのそれぞれ設けられ、
前記第1ビア、前記第2ビア、前記連結部及び前記補強部は、前記抵抗発熱体のそれぞれに対応して設けられている、
請求項1に記載のセラミックヒータ。 - 前記平面電極は、前記抵抗発熱体に電力を供給する一対の給電端子の一方に接続され、
前記第1ビア、前記連結部及び前記第2ビアは、前記一対の給電端子の他方に接続され、
前記平面電極は、グランド電極又はジャンパ線である、
請求項1又は2に記載のセラミックヒータ。 - 前記平面電極は、前記抵抗発熱体に電力を供給する一対の給電端子の一方に接続され、
前記第1ビア、前記連結部及び前記第2ビアは、前記一対の給電端子の他方に接続され、
前記平面電極は、複数の前記抵抗発熱体に共通のグランド電極である、
請求項2に記載のセラミックヒータ。 - 前記平面電極は、前記抵抗発熱体に電力を供給する一対の給電端子の一方に接続され、
前記第1ビア、前記連結部及び前記第2ビアは、前記一対の給電端子の他方に接続され、
前記平面電極は、複数の前記抵抗発熱体のそれぞれに対応して設けられたジャンパ線である、
請求項2に記載のセラミックヒータ。 - 前記平面電極は、該平面電極を厚さ方向に貫通する密着用貫通穴を有し、
前記密着用貫通穴には、前記セラミックプレートと同じ材料が充填されている、
請求項1〜5のいずれか1項に記載のセラミックヒータ。 - 前記ビア用貫通穴及び前記密着用貫通穴は、前記セラミックプレートの外周に近いほど密度が高くなっている、
請求項6に記載のセラミックヒータ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020042336A JP7202326B2 (ja) | 2020-03-11 | 2020-03-11 | セラミックヒータ |
US17/177,392 US11798792B2 (en) | 2020-03-11 | 2021-02-17 | Ceramic heater |
KR1020210021747A KR102514232B1 (ko) | 2020-03-11 | 2021-02-18 | 세라믹 히터 |
TW110105673A TWI769707B (zh) | 2020-03-11 | 2021-02-19 | 陶瓷加熱器 |
CN202110250161.6A CN113395793A (zh) | 2020-03-11 | 2021-03-08 | 陶瓷加热器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020042336A JP7202326B2 (ja) | 2020-03-11 | 2020-03-11 | セラミックヒータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021144848A true JP2021144848A (ja) | 2021-09-24 |
JP7202326B2 JP7202326B2 (ja) | 2023-01-11 |
Family
ID=77617362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020042336A Active JP7202326B2 (ja) | 2020-03-11 | 2020-03-11 | セラミックヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11798792B2 (ja) |
JP (1) | JP7202326B2 (ja) |
KR (1) | KR102514232B1 (ja) |
CN (1) | CN113395793A (ja) |
TW (1) | TWI769707B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001354473A (ja) * | 2000-04-13 | 2001-12-25 | Ibiden Co Ltd | セラミック基板 |
JP2005116608A (ja) * | 2003-10-03 | 2005-04-28 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
JP2020004946A (ja) * | 2018-06-25 | 2020-01-09 | 日本特殊陶業株式会社 | 保持装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4576670B2 (ja) * | 2000-06-07 | 2010-11-10 | パナソニック株式会社 | セラミック基板の製造方法 |
EP1406472A1 (en) * | 2001-07-09 | 2004-04-07 | Ibiden Co., Ltd. | Ceramic heater and ceramic joined article |
EP1418160A1 (en) * | 2001-07-19 | 2004-05-12 | Ibiden Co., Ltd. | CERAMIC CONNECTION BODY, METHOD OF CONNECTING THE CERAMIC BODIES, AND CERAMIC STRUCTURAL BODY |
JP6182084B2 (ja) * | 2013-03-25 | 2017-08-16 | 日本碍子株式会社 | 緻密質複合材料、その製法、接合体及び半導体製造装置用部材 |
JP6463938B2 (ja) * | 2014-10-08 | 2019-02-06 | 日本特殊陶業株式会社 | 静電チャック |
US10475687B2 (en) * | 2014-11-20 | 2019-11-12 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
WO2017029876A1 (ja) | 2015-08-20 | 2017-02-23 | 日本碍子株式会社 | 静電チャックヒータ |
JP6690918B2 (ja) * | 2015-10-16 | 2020-04-28 | 日本特殊陶業株式会社 | 加熱部材、静電チャック、及びセラミックヒータ |
JP6678458B2 (ja) | 2016-01-07 | 2020-04-08 | 日本特殊陶業株式会社 | 静電チャック |
KR102513443B1 (ko) * | 2016-03-15 | 2023-03-24 | 삼성전자주식회사 | 정전 척 및 그를 포함하는 기판 처리 장치 |
CN107534012B (zh) | 2016-03-29 | 2020-06-09 | 日本碍子株式会社 | 静电卡盘加热器 |
JP6738748B2 (ja) | 2017-02-08 | 2020-08-12 | 日本特殊陶業株式会社 | セラミックヒータの製造方法 |
JP6461300B1 (ja) | 2017-12-28 | 2019-01-30 | 株式会社Maruwa | セラミック装置 |
-
2020
- 2020-03-11 JP JP2020042336A patent/JP7202326B2/ja active Active
-
2021
- 2021-02-17 US US17/177,392 patent/US11798792B2/en active Active
- 2021-02-18 KR KR1020210021747A patent/KR102514232B1/ko active IP Right Grant
- 2021-02-19 TW TW110105673A patent/TWI769707B/zh active
- 2021-03-08 CN CN202110250161.6A patent/CN113395793A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001354473A (ja) * | 2000-04-13 | 2001-12-25 | Ibiden Co Ltd | セラミック基板 |
JP2005116608A (ja) * | 2003-10-03 | 2005-04-28 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
JP2020004946A (ja) * | 2018-06-25 | 2020-01-09 | 日本特殊陶業株式会社 | 保持装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI769707B (zh) | 2022-07-01 |
KR20210114859A (ko) | 2021-09-24 |
US11798792B2 (en) | 2023-10-24 |
JP7202326B2 (ja) | 2023-01-11 |
US20210287885A1 (en) | 2021-09-16 |
KR102514232B1 (ko) | 2023-03-24 |
CN113395793A (zh) | 2021-09-14 |
TW202142044A (zh) | 2021-11-01 |
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