TWI799108B - 晶圓承載台 - Google Patents

晶圓承載台 Download PDF

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TWI799108B
TWI799108B TW111103088A TW111103088A TWI799108B TW I799108 B TWI799108 B TW I799108B TW 111103088 A TW111103088 A TW 111103088A TW 111103088 A TW111103088 A TW 111103088A TW I799108 B TWI799108 B TW I799108B
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heater
wafer
heaters
formation surface
ceramic substrate
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松下諒平
赤塚祐司
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日商日本碍子股份有限公司
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Abstract

晶圓承載台，包括：陶瓷基體，具有晶圓載置面；以及複數的加熱器，埋設於陶瓷基體。陶瓷基體從晶圓載置面朝向與晶圓載置面的相反側的面，依序具有第1加熱器形成面、第2加熱器形成面以及第3加熱器形成面。複數的加熱器包括：設置於第1加熱器形成面的第1加熱器、設置於第2加熱器形成面的第2加熱器、以及設置於第3加熱器形成面的第3加熱器。第1加熱器設置成位於陶瓷基體的中心。第2加熱器設置成位於第1加熱器的外周。第3加熱器設置成與第2加熱器重疊，分別設置於第3加熱器形成面被半徑方向的線分割成複數個的區域。

Description

晶圓承載台
本發明係有關於晶圓承載台。
過去，以電漿CVD對晶圓進行成膜處理等時所使用的陶瓷製晶圓承載台中，多層配置加熱晶圓用的加熱器之晶圓承載台為人所知。例如專利文獻1記載了電性獨立的多層的加熱器。 [先行技術文獻] [專利文獻]
專利文獻1：日本專利第6758143號公報
[發明所欲解決的問題]然而，這種晶圓承載台雖然能夠防止熱從轉軸流失所造成的中心部的溫度下降，但有可能因為晶圓承載台的外周的影響而造成均熱性惡化。
本發明為了解決上述的問題。主要的目的是改善晶圓的外周部的均熱性。
[用以解決問題的手段]本發明的晶圓承載台，包括：陶瓷基體，具有晶圓載置面；以及複數的加熱器，埋設於該陶瓷基體，其中該陶瓷基體從該晶圓載置面朝向與該晶圓載置面的相反側的面，依序具有第1加熱器形成面、第2加熱器形成面以及第3加熱器形成面，該複數的加熱器包括：設置於該第1加熱器形成面的第1加熱器、設置於該第2加熱器形成面的第2加熱器、以及設置於該第3加熱器形成面的第3加熱器，該第1加熱器設置成位於該陶瓷基體的中心，該第2加熱器設置成位於該第1加熱器的外周，該第3加熱器設置成與該第2加熱器重疊，分別設置於該第3加熱器形成面被半徑方向的線分割成複數個的區域。
本發明的晶圓承載台中，第3加熱器形成面被半徑方向的線分割成複數的區域各自具有第3加熱器，因此能夠個別地對複數的第3加熱器進行溫度控制，藉此能夠抑制外周部因素對均熱性造成的影響。又，第1加熱器與其他的加熱器形成面不同，埋設在更靠晶圓載置面的附近，藉此不會有其他的加熱器的跳線通過，第1加熱器的設計自由度變高，均熱性提升。
[用以實施發明的型態]以下，將參照圖式來說明本發明較佳的實施型態。圖1為使用於電漿產生裝置的晶圓承載台的剖面圖。圖2為顯示線圈狀的加熱器與跳線的關係的說明圖。圖3～圖5為陶瓷基體的第1～第3加熱器形成面的平面圖。圖3～圖5中以影線表示線圈狀的加熱器。
晶圓承載台包括：具有晶圓載置面的陶瓷基體、埋設於陶瓷基體的複數的加熱器、設置於陶瓷基體的與晶圓載置面相反側的面的筒狀的轉軸。
陶瓷基體從晶圓載置面朝向與晶圓載置面相反側的面，依序具有第1加熱器形成面、第2加熱器形成面以及第3加熱器形成面。
複數的加熱器包括設置於第1加熱器形成面的第1加熱器、設置於第2加熱器形成面的第2加熱器(第2加熱器X、Y)以及設置於第3加熱器形成面的第3加熱器(第3加熱器A~D)。第1加熱器設置於位於陶瓷基體的中心。
第1加熱器是將線圈配置成從一側的端子一筆畫地到達另一端子的加熱器。
第2加熱器包括設置於第2加熱器形成面的內側的第2加熱器X、設置於第2加熱器形成面的外側的第2加熱器Y。第2加熱器X、Y任一者都設置於第1加熱器的外周。第2加熱器X從一側的端子透過一側的第2加熱器X用跳線拉出到第1加熱器的外側後，一筆畫地配置線圈，再藉由另一側的第2加熱器X用跳線拉進中心側的另一側的端子。第2加熱器Y從一側的端子透過一側的第2加熱器Y用跳線拉出到第2加熱器X的外側後，一筆畫地配置線圈，再藉由另一側的第2加熱器Y用跳線拉進中心側的另一側的端子。第2加熱器X、Y用跳線設置在第2加熱器形成面。也就是，第2加熱器X、Y用跳線形成於與第2加熱器X、Y同一面。另外，同一面只要是與第2加熱器X、Y的高度重疊的面即可。例如，第2加熱器X、Y是線圈狀的情況下，在最靠近晶圓的載置面的線圈上部與最遠離晶圓載置面的線圈下部之間的話，視為同一面(以下相同)。
第3加熱器具備4個第3加熱器A~D。第3加熱器A~D各自設置於第3加熱器形成面被半徑方向的線所分割成複數個(圖5中是4個)的區域，垂直平面觀看任一者都與第2加熱器部分地重疊。在此，第3加熱器A及第3加熱器B形成一體。具體來說，第3加熱器A從一側的端子透過第3加熱器A用跳線拉出到外側後，一筆畫地配置線圈，直到第3加熱器A、B用共通跳線(連接到接地端子)的連接部。第3加熱器B從該連接部一筆畫地配置線圈後，透過第3加熱器B用跳線拉近中心側的另一側的端子。又，第3加熱器C及第3加熱器D形成一體。具體來說，第3加熱器C從一側的端子透過第3加熱器C用跳線拉出到外側後，一筆畫地配置線圈，直到第3加熱器C、D用共通跳線（連接到接地端子）的連接部。第3加熱器D從該連接部一筆畫地配置線圈後，透過第3加熱器D用跳線拉近中心側的另一側的端子。第3加熱器A、B用跳線、第3加熱器A、B用共通跳線、第3加熱器C、D用跳線、第3加熱器C、D用共通跳線，任一者都與第3加熱器A～D同樣地，設置於第3加熱器形成面，也就是，這些跳線都形成於與第3加熱器A～D相同的面。
陶瓷基體上，從與晶圓載置面相反側的面，朝向分別對應第1加熱器、第2加熱器（第2加熱器X、Y）及第3加熱器（第3加熱器A～D）的端子形成端子孔。對應第1加熱器、第2加熱器（第2加熱器X、Y）及第3加熱器（第3加熱器A～D）的端子孔，其深度與各加熱器的深度成比例。
第1加熱器、第2加熱器（第2加熱器X、Y）及第3加熱器（第3加熱器A～D）的端子如上所述是線圈形狀。第2加熱器用跳線連接到第2加熱器的線中當中位於與晶圓載置面相反側的面側的線圈下部。第3加熱器用跳線連接到第3加熱器的線中當中位於晶圓載置面側的線圈上部。
陶瓷基體在比第1加熱器更靠晶圓載置面側具有RF電極。供電給第1加熱器的導棒、供電給第2加熱器（第2加熱器X、Y）的導棒、供電給第3加熱器（第3加熱器A～D）的導棒、連接至RF電極的導棒，從轉軸突出到下方的部分的長度全部相同。
第2加熱器各自設置於第2加熱器形成面被陶瓷基體及同心圓狀的交界所分割的複數個（在此是2個）區域。
以上說明的本實施型態的晶圓承載台中，因為第3加熱器形成面被半徑方向的線所分割的複數個區域各自具有第3加熱器A～D，而能夠個別地對複數的第3加熱器A～D做溫度控制。因此，能夠抑制因為外周部因素對均熱性造成的影響。又，因為第1加熱器不同於其他的加熱器形成面，其埋設在晶圓載置面附近，所以不會有其他的加熱器的跳線通過，第1加熱器的設計自由度提高，均熱性提升。
又，環狀的第2加熱器與扇狀的第3加熱器重疊，因此能夠做更精細的溫度控制。
又，對應第1加熱器、第2加熱器（第2加熱器X、Y）及第3加熱器（第3加熱器A～D）的端子孔，其深度與各加熱器的深度成比例。因此不會有在陶瓷基體的厚度方向延伸的跳線，製造變得容易。
又，從比第2加熱器的線圈中心更靠與晶圓載置面相反側的面側（本實施型態中是線圈下部）拉出第2加熱器用跳線，因此，能夠增大晶圓載置面到跳線之間的距離D1（參照圖2），減小跳線的發熱造成的影響。
又，從比第3加熱器的線圈中心更靠與晶圓載置面側（本實施型態中是線圈上部）拉出第3加熱器用跳線，因此，能夠增長陶瓷基體的晶圓載置面的相反側的面到跳線之間的距離D2（參照圖2）。藉此，能夠確保安裝端子的孔的長度。
又，因為供給電力至複數的加熱器及RF電極的導棒從轉軸伸出的長度相同，而能夠使導棒接收側的構造簡略化。
又，本發明並不限定於上述實施型態，只要屬於本發明的技術範圍，亦可以以各種方式實施本發明。
本申請案主張於2021年2月5日申請的日本專利第2021-017029號的優先權，藉由引用的方式，本說明書包括其全部的內容。
無。
圖1為使用於電漿產生裝置的晶圓承載台的剖面圖。 圖2為顯示線圈狀的加熱器與跳線的關係的說明圖。 圖3為陶瓷基體的第1加熱器形成面的平面圖。 圖4為陶瓷基體的第2加熱器形成面的平面圖。 圖5為陶瓷基體的第3加熱器形成面的平面圖。

Claims (6)

  1. 一種晶圓承載台，包括：陶瓷基體，具有晶圓載置面；以及複數的加熱器，埋設於該陶瓷基體，其中該陶瓷基體從該晶圓載置面朝向與該晶圓載置面的相反側的面，依序具有第1加熱器形成面、第2加熱器形成面以及第3加熱器形成面，該複數的加熱器包括：設置於該第1加熱器形成面的第1加熱器、設置於該第2加熱器形成面的第2加熱器、以及設置於該第3加熱器形成面的第3加熱器，該第1加熱器設置成位於該陶瓷基體的中心，該第2加熱器設置成位於該第1加熱器的外周，該第3加熱器設置成與該第2加熱器部分地重疊，分別設置於該第3加熱器形成面被半徑方向的線分割成複數個的區域。
  2. 如請求項1之晶圓承載台，其中：第2加熱器用跳線設置於該第2加熱器形成面，第3加熱器用跳線設置於該第3加熱器形成面。
  3. 如請求項1或2之晶圓承載台，其中供電至該第1加熱器、該第2加熱器及該第3加熱器的端子孔的深度與各加熱器的深度成比例。
  4. 如請求項1或2之晶圓承載台，其中：該第1加熱器、該第2加熱器及該第3加熱器是線圈形狀，第2加熱器用跳線連接到比該第2加熱器的線圈中心更靠與該晶圓載置面的相反側的面側，第3加熱器用跳線連接到比該第3加熱器的線圈中心更靠與該晶圓載置面側。
  5. 如請求項1或2之晶圓承載台，其中：該陶瓷基體在比該複數的加熱器更靠該晶圓載置面側具有RF電極，且在與 該晶圓載置面側的相反側的面具有筒狀的轉軸，供電至該第1加熱器的導棒、供電至該第2加熱器的導棒、供電至該第3加熱器的導棒、連接至該RF電極的導棒，它們從該轉軸突出的部分的長度全部相同。
  6. 如請求項1或2之晶圓承載台，其中該第2加熱器分別設置在該第2加熱器形成面被該陶瓷基體及同心圓狀的交界所分割的複數的區域。
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