JP2021113349A - ターゲットの製造方法 - Google Patents
ターゲットの製造方法 Download PDFInfo
- Publication number
- JP2021113349A JP2021113349A JP2020007059A JP2020007059A JP2021113349A JP 2021113349 A JP2021113349 A JP 2021113349A JP 2020007059 A JP2020007059 A JP 2020007059A JP 2020007059 A JP2020007059 A JP 2020007059A JP 2021113349 A JP2021113349 A JP 2021113349A
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- JP
- Japan
- Prior art keywords
- target
- nio
- powder
- film
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 34
- 238000005245 sintering Methods 0.000 claims abstract description 20
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- 229910013290 LiNiO 2 Inorganic materials 0.000 claims description 20
- 239000011812 mixed powder Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 229910003005 LiNiO2 Inorganic materials 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 31
- 239000000758 substrate Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 22
- 238000005204 segregation Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
12、60:成膜装置
14:真空チャンバ
16:基板ステージ
18、20:真空ポンプ
22、24:ガス供給装置
25:供給源
26:供給管
28:調節弁
30:基板
32、66、68:カソード
36、70、72:シャッター
42:制御器
Claims (1)
- Liを含有するNiO膜を成膜するためのターゲットの製造方法であって、
LiNiO2を含有する粉末と、NiOを含有する粉末との混合粉末を、LiNiO2の融点よりも低い焼結温度で焼結する工程を備える、
製造方法。
Priority Applications (1)
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JP2020007059A JP7298490B2 (ja) | 2020-01-20 | 2020-01-20 | ターゲットの製造方法 |
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JP2020007059A JP7298490B2 (ja) | 2020-01-20 | 2020-01-20 | ターゲットの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2021113349A true JP2021113349A (ja) | 2021-08-05 |
JP7298490B2 JP7298490B2 (ja) | 2023-06-27 |
Family
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JP2020007059A Active JP7298490B2 (ja) | 2020-01-20 | 2020-01-20 | ターゲットの製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP7298490B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07502076A (ja) * | 1991-12-13 | 1995-03-02 | ソシエテ・ナシオナル・エルフ・アキテーヌ | 陰極スパッタリング用ターゲット要素の調製方法 |
JPH09249962A (ja) * | 1996-03-14 | 1997-09-22 | Toshiba Corp | 酸化物薄膜の形成方法および酸化物薄膜 |
JP2016023333A (ja) * | 2014-07-18 | 2016-02-08 | 三菱マテリアル株式会社 | ニッケル酸リチウムスパッタリングターゲットの製造方法 |
-
2020
- 2020-01-20 JP JP2020007059A patent/JP7298490B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07502076A (ja) * | 1991-12-13 | 1995-03-02 | ソシエテ・ナシオナル・エルフ・アキテーヌ | 陰極スパッタリング用ターゲット要素の調製方法 |
JPH09249962A (ja) * | 1996-03-14 | 1997-09-22 | Toshiba Corp | 酸化物薄膜の形成方法および酸化物薄膜 |
JP2016023333A (ja) * | 2014-07-18 | 2016-02-08 | 三菱マテリアル株式会社 | ニッケル酸リチウムスパッタリングターゲットの製造方法 |
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