JP2021042466A - 基体、特に超伝導テープ導体をコーティングする装置、方法及びシステム並びにコーティングされた超伝導テープ導体 - Google Patents
基体、特に超伝導テープ導体をコーティングする装置、方法及びシステム並びにコーティングされた超伝導テープ導体 Download PDFInfo
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- JP2021042466A JP2021042466A JP2020140223A JP2020140223A JP2021042466A JP 2021042466 A JP2021042466 A JP 2021042466A JP 2020140223 A JP2020140223 A JP 2020140223A JP 2020140223 A JP2020140223 A JP 2020140223A JP 2021042466 A JP2021042466 A JP 2021042466A
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Abstract
Description
processing", ISBN: 0-8155-1422-0,1998, P. 498ff参照)、B.A. Movchan, A.V. Demchishin, Fiz. Met. Metalloved. 28 (1969) 653のゾーンモデルにより説明することができる。50nm/sより高い堆積速度による極端に高い速度範囲には、従来のPVD方法を用いる場合、良伝導金属ターゲットでさえもスパッタリングにより到達することはできない。
この熱容量は、特に薄膜及びテープの場合は、非常に小さく、このことが、温度に敏感な基体の、少なくとも1つのコーティングゾーンを通過させる毎に堆積することができる最大膜厚を制限する。例えば、HTSテープ導体の場合、真空環境における最高温度は180℃より低く、好ましくは150℃より低く保つ必要がある。この温度を超えると、HTS層の特性、特に臨界電流容量の悪化が酸素の損失により発生し得るからである。
このプロセスは、所望の総コーティング厚に達するまで、必要なだけ何度も続けることができる。当該中間冷却装置は、コーティングゾーン(又は複数のコーティングゾーン)の外側に配置することもでき、該コーティングゾーン(又は複数のコーティングゾーン)から効果的に切り離すことができる。そこでは、例えば、当該基体は、冷却されたローラ及び固体熱伝導によって、又は入口温度がコーティング中の温度上昇を補償するのに十分なほど低い程度に増加される熱伝導によって冷却することができる。
= イットリウム又は希土類元素)の類からの銅酸化物が堆積された。当該金属被覆は、過負荷の場合に溶け落ちないように、当該テープ導体の接触、保護及び電気的安定化のために使用される。
2 蒸発源/ガス源
3 水冷膨張室/膨張ノズル
4 移動する基体テープ(箔)
5 コーティングゾーン
6 テープ巻き取り器/巻き取り装置
7a,7b 水冷後部反射器/ガス反射器
8 中間冷却装置
D 蒸発源と基体テープとの間の距離
L 膨張室/膨張ノズルの長さ
Oi 膨張室の入口直径
Oa 膨張室の出口直径
Claims (15)
- 背景ガス圧が最大で1・10−1パスカルである真空環境(1)において基体(4)を金属コーティングによりコーティングする方法であって、
ガス源(2)において気相の金属材料(9)を生成するステップであって、前記ガス源(2)における前記金属材料(9)の蒸気圧が少なくとも1・101パスカルであるステップと、
前記気相金属材料(9)を膨張室(3)に供給するステップであって、該膨張室(3)がラバール・ノズルの発散部分の形状を有すると共に前記気相金属材料(9)が膨張し且つ前記基体(4)に向けられるようにするステップと、
前記金属材料(9)を前記基体(4)の表面の少なくとも一部上に堆積させるステップと、
を有する方法。 - 前記膨張室(3)が前記基体(4)の方向において前記気相金属材料(9)の粒子の少なくとも横方向運動量成分を縦方向運動量成分に変換し、及び/又は
前記膨張室(3)が前記基体(4)の方向において前記気相金属材料(9)の超音速流を発生し、及び/又は
前記膨張室(3)が前記気相金属材料(9)の粒子を前記基体(4)上に向け、これら粒子が前記基体(4)の面法線に対して15°以下の、好ましくは10°以下の、最も好ましくは5°以下の角度で衝突するようにする、
請求項1に記載の方法。 - 前記真空環境(1)における前記背景ガス圧が最大で1・10−2パスカル、より好ましくは最大で1・10−3パスカルであり、及び/又は
前記基体(4)が前記膨張室(3)の出口開口を超えて、好ましくは連続的に、移動される、
請求項1又は請求項2に記載の方法。 - 前記気相金属材料(9)の粒子は前記ガス源から流れ出る際に1mm未満、好ましくは0.1mm未満、より好ましくは0.05mm未満の平均自由行程長を有し、及び/又は
前記ガス源(2)における前記金属材料(9)の蒸気圧が少なくとも1・102パスカル、より好ましくは少なくとも1・103パスカルである、
請求項1から3の何れか一項に記載の方法。 - 背景ガス圧が最大で1・10−1パスカルである真空環境(1)において基体(4)を金属コーティングによりコーティングする装置であって、
気相の金属材料(9)を発生するガス源(2)であって、該ガス源(2)における前記金属材料(9)の蒸気圧が少なくとも1・101パスカルであるガス源(2)、
を有し、
前記ガス源(2)は前記気相金属材料(9)が膨張室(3)に流れ込む開口を有し、
前記膨張室(3)がラバール・ノズルの発散部分の形状を有すると共に、前記気相金属材料(9)が膨張し且つ前記基体(4)に向けられるように構成される、
装置。 - 前記膨張室(3)が前記基体(4)の方向において前記気相金属材料(9)の粒子の少なくとも横方向運動量成分を縦方向運動量成分に変換し、及び/又は
前記膨張室(3)が前記基体(4)の方向において前記気相金属材料(9)の超音速流を発生し、及び/又は
前記膨張室(3)が前記気相金属材料(9)の粒子を前記基体(4)上に向け、これら粒子が前記基体(4)の面法線に対して15°以下の、好ましくは10°以下の、最も好ましくは5°以下の角度で衝突するようにする、
請求項5に記載の装置。 - 前記膨張室(3)を囲む周面を更に有し、
前記周面の少なくとも一部は付着防止コーティング、好ましくはペルフルオロポリエーテル(PFPE)付着防止コーティングを有し、及び/又は
前記周面の少なくとも一部は熱放射の吸収が増加されるように処理され、及び/又は
前記周面の少なくとも一部が能動的に冷却される、
請求項5又は請求項6に記載の装置。 - 前記膨張室(3)は前記基体(4)に面する出口開口及び前記ガス源(2)に面する入口開口を有し、前記出口開口及び入口開口の直径の比は少なくとも1.5、好ましくは少なくとも1.75、より好ましくは少なくとも2.0であり、及び/又は
前記入口開口と前記基体との間の距離及び前記入口開口と前記出口開口との間の距離の比は少なくとも1.0且つ最大で1.4であり、及び/又は
前記出口開口と前記入口開口との間の距離及び前記出口開口の直径の間の比が少なくとも1.5である、
請求項5から7の何れか一項に記載の装置。 - 前記膨張室(3)は前記ガス源(2)から前記基体(4)に向かって特に円錐又は釣鐘状に拡幅し、及び/又は
前記ガス源(2)の開口は、好ましくは少なくとも1つのフィンを備える開放型隔膜を有し、及び/又は
前記ガス源(2)及び/又は前記開放型隔膜が、高融点の材料、好ましくはタングステン、タンタル、モリブデン、炭素及び/又は耐熱セラミックから形成される、
請求項5から8の何れか一項に記載の装置。 - 真空環境(1)において基体(4)を金属コーティングによりコーティングするシステムであって、
金属材料(9)が前記基体(4)上に請求項5から9の何れか一項に記載の装置を用いて堆積される少なくとも1つのコーティングゾーン(5)であって、前記基体(4)が該少なくとも1つのコーティングゾーン(5)を少なくとも2回通過するコーティングゾーン、又は
前記金属材料(9)が前記基体(4)上に請求項5から9の何れか一項に記載の装置を用いて堆積される少なくとも2つのコーティングゾーン(5)であって、前記基体(4)が該少なくとも2つのコーティングゾーン(5)の各々を少なくとも1回通過するコーティングゾーン、
を有するシステム。 - 前記基体(4)の向きを前記少なくとも1つのコーティングゾーン(5)の第1の通過後であって第2の通過前に又は第2コーティングゾーン(5)の通過前に変更する装置(6)、
前記基体(4)を前記少なくとも1つのコーティングゾーン(5)の第1の通過後であって第2の通過前に又は第2コーティングゾーン(5)の通過前に冷却する装置(8)、及び/又は
前記少なくとも1つのコーティングゾーン(5)内又は該ゾーンの周囲に配置される少なくとも1つのガス反射器(7a,7b)であって、前記金属材料(9)の粒子を前記基体(4)の方向に反射するガス反射器、
を更に有する請求項10に記載のシステム。 - 前記少なくとも1つのガス反射器(7a,7b)の少なくとも一部は付着防止コーティングを有し、及び/又は
前記少なくとも1つのガス反射器(7a,7b)の少なくとも一部は熱放射の吸収を増加させるように処理され、及び/又は
前記ガス反射器(7a,7b)の少なくとも一部が能動的に冷却される、
請求項11に記載のシステム。 - コーティングされた超伝導テープ導体(300)であって、
少なくとも1つの超伝導層(310)と、
前記テープ導体(300)上に堆積された少なくとも1つの金属コーティング(320)と、
を有し、
前記金属コーティング(320)の厚さが少なくとも1μmであって、前記コーティングされたテープ導体(300)の幅にわたり10%以下、好ましくは5%以下しか変化しない、
コーティングされた超伝導テープ導体。 - 前記少なくとも1つの金属コーティング(320)が、請求項1から4の何れか一項に記載の方法、及び/又は請求項5から9の何れか一項に記載の装置、及び/又は請求項10から12の何れか一項に記載のシステムにより生成されたものである請求項13に記載のコーティングされた超伝導テープ導体(300)。
- 前記少なくとも1つの金属コーティング(320)の体積は、5%未満、好ましくは3%未満、より好ましくは1%未満の空洞、間隙及び/又は孔(440)しか有さず、及び/又は
前記金属コーティング内に埋め込まれ又は該金属コーティング上に堆積されると共に少なくとも10μmの平均直径を有する金属粒子(450)の面積密度は、5/cm2未満、好ましくは3/cm2未満、より好ましくは1/cm2未満、最も好ましくは0.1/cm2未満であり、及び/又は
前記少なくとも1つの金属コーティング(320)は、金、銀、銅及び/又は錫、これらの合金、又はこれら金属の配列を有し、及び/又は
前記少なくとも1つの金属コーティング(320)が前記テープ導体(300)を包む、
請求項13又は請求項14に記載のコーティングされた超伝導テープ導体(300)。
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