JP2021041430A5 - - Google Patents

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Publication number
JP2021041430A5
JP2021041430A5 JP2019165701A JP2019165701A JP2021041430A5 JP 2021041430 A5 JP2021041430 A5 JP 2021041430A5 JP 2019165701 A JP2019165701 A JP 2019165701A JP 2019165701 A JP2019165701 A JP 2019165701A JP 2021041430 A5 JP2021041430 A5 JP 2021041430A5
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JP
Japan
Prior art keywords
melting point
alloy
low melting
based low
bonding member
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JP2019165701A
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English (en)
Japanese (ja)
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JP2021041430A (ja
JP7080867B2 (ja
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Priority claimed from JP2019165701A external-priority patent/JP7080867B2/ja
Priority to JP2019165701A priority Critical patent/JP7080867B2/ja
Priority to KR1020227011610A priority patent/KR20220055494A/ko
Priority to US17/641,568 priority patent/US20220395935A1/en
Priority to EP20863183.8A priority patent/EP4029639A4/en
Priority to PCT/JP2020/033647 priority patent/WO2021049437A1/ja
Priority to TW109131104A priority patent/TWI879799B/zh
Publication of JP2021041430A publication Critical patent/JP2021041430A/ja
Publication of JP2021041430A5 publication Critical patent/JP2021041430A5/ja
Publication of JP7080867B2 publication Critical patent/JP7080867B2/ja
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JP2019165701A 2019-09-11 2019-09-11 Sn-Bi-In系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法 Active JP7080867B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019165701A JP7080867B2 (ja) 2019-09-11 2019-09-11 Sn-Bi-In系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法
PCT/JP2020/033647 WO2021049437A1 (ja) 2019-09-11 2020-09-04 Sn-Bi-In系低融点接合部材およびその製造方法、ならびに半導体電子回路およびその実装方法
US17/641,568 US20220395935A1 (en) 2019-09-11 2020-09-04 Sn-bi-in-based low melting-point joining member, production method therefor, semiconductor electronic circuit, and mounting method therefor
EP20863183.8A EP4029639A4 (en) 2019-09-11 2020-09-04 SN-BI BASED LOW MELTING POINT CONNECTOR, METHOD OF MANUFACTURE THEREOF, SEMICONDUCTOR ELECTRONIC CIRCUIT AND ASSEMBLY METHOD THEREOF
KR1020227011610A KR20220055494A (ko) 2019-09-11 2020-09-04 Sn-Bi-In계 저융점 접합 부재 및 그 제조 방법, 및 반도체 전자 회로 및 그 실장 방법
TW109131104A TWI879799B (zh) 2019-09-11 2020-09-10 Sn-Bi-In系低熔點接合構件及其製造方法,以及半導體電子回路及其構裝方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019165701A JP7080867B2 (ja) 2019-09-11 2019-09-11 Sn-Bi-In系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法

Publications (3)

Publication Number Publication Date
JP2021041430A JP2021041430A (ja) 2021-03-18
JP2021041430A5 true JP2021041430A5 (enrdf_load_stackoverflow) 2022-01-20
JP7080867B2 JP7080867B2 (ja) 2022-06-06

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JP2019165701A Active JP7080867B2 (ja) 2019-09-11 2019-09-11 Sn-Bi-In系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法

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JP (1) JP7080867B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7080939B2 (ja) * 2020-09-04 2022-06-06 株式会社新菱 低融点接合部材およびその製造方法ならびに半導体電子回路およびその実装方法
JP7590236B2 (ja) * 2021-03-17 2024-11-26 株式会社三共 遊技機

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344607A (en) * 1993-06-16 1994-09-06 International Business Machines Corporation Lead-free, high tin, ternary solder alloy of tin, bismuth, and indium
TW369451B (en) 1996-05-10 1999-09-11 Ford Motor Co Solder composition and method of using to interconnect electronic components to circuits on thermoplastic substrates
JP2001219267A (ja) 2000-02-09 2001-08-14 Nippon Macdermid Kk 錫−インジウム−ビスマスはんだ合金めっき層の形成方法
US8293370B2 (en) 2006-08-04 2012-10-23 Panasonic Corporation Bonding material, bonded portion and circuit board
JP5534122B1 (ja) 2014-02-04 2014-06-25 千住金属工業株式会社 核ボール、はんだペースト、フォームはんだ、フラックスコート核ボールおよびはんだ継手
KR20160145191A (ko) 2014-10-10 2016-12-19 이시하라 케미칼 가부시키가이샤 합금 범프의 제조방법
JP2018079480A (ja) 2016-11-14 2018-05-24 住友金属鉱山株式会社 低温用のBi−In−Sn系はんだ合金、それを用いた電子部品実装基板及びその実装基板を搭載した装置

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