JP2021004928A5 - - Google Patents
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- JP2021004928A5 JP2021004928A5 JP2019117465A JP2019117465A JP2021004928A5 JP 2021004928 A5 JP2021004928 A5 JP 2021004928A5 JP 2019117465 A JP2019117465 A JP 2019117465A JP 2019117465 A JP2019117465 A JP 2019117465A JP 2021004928 A5 JP2021004928 A5 JP 2021004928A5
- Authority
- JP
- Japan
- Prior art keywords
- tip
- polarizing element
- wire grid
- shape
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims description 139
- 239000002184 metal Substances 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 78
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 4
- 239000000976 ink Substances 0.000 description 66
- 239000010419 fine particle Substances 0.000 description 46
- 230000010287 polarization Effects 0.000 description 44
- 238000010304 firing Methods 0.000 description 31
- 238000002834 transmittance Methods 0.000 description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 229910052709 silver Inorganic materials 0.000 description 22
- 239000004332 silver Substances 0.000 description 22
- 238000012360 testing method Methods 0.000 description 22
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000000975 dye Substances 0.000 description 12
- 238000011049 filling Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000005871 repellent Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- -1 amine compound Chemical class 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012461 cellulose resin Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920003050 poly-cycloolefin Polymers 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000004984 smart glass Substances 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000005968 1-Decanol Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005331 FeSi2 Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229920006127 amorphous resin Polymers 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- VMTCKFAPVIWNOF-UHFFFAOYSA-N methane tetrahydrofluoride Chemical compound C.F.F.F.F VMTCKFAPVIWNOF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003138 primary alcohols Chemical class 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019117465A JP7477085B2 (ja) | 2019-06-25 | 2019-06-25 | ワイヤグリッド型偏光素子、及びその製造方法 |
| KR1020217037587A KR102851295B1 (ko) | 2019-06-25 | 2020-05-14 | 와이어 그리드형 편광 소자 및 그 제조 방법 |
| CN202080043060.5A CN114008495B (zh) | 2019-06-25 | 2020-05-14 | 线栅型偏振元件及其制造方法 |
| PCT/JP2020/019185 WO2020261791A1 (ja) | 2019-06-25 | 2020-05-14 | ワイヤグリッド型偏光素子、及びその製造方法 |
| TW109117057A TWI733461B (zh) | 2019-06-25 | 2020-05-22 | 線柵型偏光元件及其製造方法 |
| US17/535,744 US12189162B2 (en) | 2019-06-25 | 2021-11-26 | Wire-grid polarizer and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019117465A JP7477085B2 (ja) | 2019-06-25 | 2019-06-25 | ワイヤグリッド型偏光素子、及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021004928A JP2021004928A (ja) | 2021-01-14 |
| JP2021004928A5 true JP2021004928A5 (enExample) | 2022-06-13 |
| JP7477085B2 JP7477085B2 (ja) | 2024-05-01 |
Family
ID=74060871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019117465A Active JP7477085B2 (ja) | 2019-06-25 | 2019-06-25 | ワイヤグリッド型偏光素子、及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12189162B2 (enExample) |
| JP (1) | JP7477085B2 (enExample) |
| KR (1) | KR102851295B1 (enExample) |
| CN (1) | CN114008495B (enExample) |
| TW (1) | TWI733461B (enExample) |
| WO (1) | WO2020261791A1 (enExample) |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004309903A (ja) * | 2003-04-09 | 2004-11-04 | Ricoh Opt Ind Co Ltd | 無機偏光素子および偏光光学素子および液晶素子 |
| JP4386413B2 (ja) * | 2003-08-25 | 2009-12-16 | 株式会社エンプラス | ワイヤーグリッド偏光子の製造方法 |
| JP2006058615A (ja) * | 2004-08-20 | 2006-03-02 | Sumitomo Chemical Co Ltd | 金属細線が埋め込まれた偏光分離素子 |
| US7961393B2 (en) | 2004-12-06 | 2011-06-14 | Moxtek, Inc. | Selectively absorptive wire-grid polarizer |
| JP4821614B2 (ja) * | 2004-12-16 | 2011-11-24 | 東レ株式会社 | 偏光板、その製造方法およびそれを用いた液晶表示装置 |
| JP4616066B2 (ja) * | 2005-04-26 | 2011-01-19 | 株式会社リコー | 埋め込み微細パターンの形成方法 |
| KR100894939B1 (ko) * | 2005-10-17 | 2009-04-27 | 아사히 가세이 가부시키가이샤 | 와이어 그리드 편광판 및 그 제조 방법 |
| JP5096735B2 (ja) | 2006-12-05 | 2012-12-12 | Jx日鉱日石エネルギー株式会社 | ワイヤグリッド型偏光子及びその製造方法、並びにそれを用いた位相差フィルム及び液晶表示素子 |
| JP2009204894A (ja) | 2008-02-28 | 2009-09-10 | Sony Corp | ワイヤグリッド偏光素子及びその製造方法、液晶ディスプレイ |
| JP2009244312A (ja) * | 2008-03-28 | 2009-10-22 | Asahi Kasei E-Materials Corp | ワイヤグリッド型偏光子 |
| JP5368011B2 (ja) | 2008-06-12 | 2013-12-18 | 旭化成イーマテリアルズ株式会社 | 吸収型ワイヤグリッド偏光子 |
| EP2299299A4 (en) | 2008-07-10 | 2013-05-29 | Asahi Glass Co Ltd | WIRE GRATING POLARIZER AND METHOD FOR PRODUCING THIS POLARIZER |
| JP5291425B2 (ja) | 2008-10-03 | 2013-09-18 | 旭化成イーマテリアルズ株式会社 | 吸収型ワイヤグリッド偏光子及び液晶表示装置 |
| JP5291424B2 (ja) | 2008-10-03 | 2013-09-18 | 旭化成イーマテリアルズ株式会社 | 吸収型ワイヤグリッド偏光子及び液晶表示装置 |
| JP2010204626A (ja) * | 2009-02-05 | 2010-09-16 | Asahi Glass Co Ltd | ワイヤグリッド型偏光子およびその製造方法 |
| JP2010204297A (ja) * | 2009-03-02 | 2010-09-16 | Teijin Ltd | ワイヤーグリッド偏光子及びその製造方法 |
| JP5526851B2 (ja) | 2010-02-19 | 2014-06-18 | セイコーエプソン株式会社 | 偏光素子及びプロジェクター |
| JP2012073484A (ja) * | 2010-09-29 | 2012-04-12 | Asahi Glass Co Ltd | ワイヤグリッド型偏光子および液晶表示装置 |
| JP2012098703A (ja) | 2010-10-04 | 2012-05-24 | Hoya Corp | 偏光素子 |
| KR101416628B1 (ko) * | 2012-12-10 | 2014-07-08 | 한국전기연구원 | 와이어 그리드 편광자의 제조 장치 및 방법 |
| KR20160069048A (ko) * | 2014-12-05 | 2016-06-16 | 삼성디스플레이 주식회사 | 와이어 그리드 편광자 및 이의 제조방법 |
| JP2016191805A (ja) * | 2015-03-31 | 2016-11-10 | 大日本印刷株式会社 | 偏光子、偏光子の製造方法及び液晶表示装置 |
| JP2018159880A (ja) * | 2017-03-23 | 2018-10-11 | 日本ゼオン株式会社 | 円偏光フィルム及びその製造方法 |
-
2019
- 2019-06-25 JP JP2019117465A patent/JP7477085B2/ja active Active
-
2020
- 2020-05-14 WO PCT/JP2020/019185 patent/WO2020261791A1/ja not_active Ceased
- 2020-05-14 KR KR1020217037587A patent/KR102851295B1/ko active Active
- 2020-05-14 CN CN202080043060.5A patent/CN114008495B/zh active Active
- 2020-05-22 TW TW109117057A patent/TWI733461B/zh active
-
2021
- 2021-11-26 US US17/535,744 patent/US12189162B2/en active Active
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