JP2020533792A - めっき用チャック装置 - Google Patents
めっき用チャック装置 Download PDFInfo
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- JP2020533792A JP2020533792A JP2020513842A JP2020513842A JP2020533792A JP 2020533792 A JP2020533792 A JP 2020533792A JP 2020513842 A JP2020513842 A JP 2020513842A JP 2020513842 A JP2020513842 A JP 2020513842A JP 2020533792 A JP2020533792 A JP 2020533792A
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- 238000007747 plating Methods 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 143
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000005060 rubber Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 27
- 239000008151 electrolyte solution Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 238000003825 pressing Methods 0.000 description 9
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- 239000000243 solution Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
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- H01L2224/11462—Electroplating
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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Abstract
Description
Claims (13)
- 切欠領域と前記切欠領域に隣接するパターン領域とを有する基板を保持するための、めっき用チャック装置であって、
前記基板の前記切欠領域を覆い、前記基板がめっきされるときに前記切欠領域の電界をシールドするように構成された、カバープレートを備えている、めっき用チャック装置。 - 前記カバープレートは、前記基板の前記切欠領域に隣接する前記パターン領域の一部を覆う、請求項1に記載のめっき用チャック装置。
- 下壁と、前記下壁から上方に延びる側壁と、前記側壁の上部から外側に延びる上壁とを有するシールドをさらに備え、前記下壁は、水平方向に突出し、前記カバープレートを形成している、請求項1に記載のめっき用チャック装置。
- 前記カバープレートに開口が設けられている、請求項3に記載のめっき用チャック装置。
- 前記カバープレートに複数の穴が設けられている、請求項3に記載のめっき用チャック装置。
- 下壁と外壁と内壁とを有するシールシェルをさらに備え、前記内壁は、湾曲し、リップシール部を形成し、前記内壁は、水平方向に突出し、前記カバープレートを形成している、請求項1に記載のめっき用チャック装置。
- 前記カバープレートに開口が設けられている、請求項6に記載のめっき用チャック装置。
- 前記カバープレートに複数の穴が設けられている、請求項6に記載のめっき用チャック装置。
- 前記カバープレートの形状が、前記切欠領域の形状に応じて調整される、請求項1に記載のめっき用チャック装置。
- 前記カバープレートにおける前記基板の前記切欠領域からより離隔した一方の側面は、直線状又はアーク線状であり、前記カバープレートにおける前記基板の前記切欠領域により近接した他方の側面は、直線状、多角線状又はアーク線状である、請求項1に記載のめっき用チャック装置。
- 前記カバープレートは、前記基板の中心と前記基板の切欠きとを通る軸に対して、対称又は非対称である、請求項1に記載のめっき用チャック装置。
- 前記カバープレートと前記基板との間に間隙があり、前記間隙が前記カバープレートの変形量よりも大きく、前記カバープレートと前記基板との接触が回避される、請求項1に記載のめっき用チャック装置。
- 前記カバープレートの材料は、プラスチック、ゴム、又は、断熱材料で被覆された金属である、請求項1に記載のめっき用チャック装置。
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JP6901646B1 (ja) * | 2020-12-03 | 2021-07-14 | 株式会社荏原製作所 | めっき装置、およびめっき方法 |
TWI755958B (zh) * | 2020-12-04 | 2022-02-21 | 日商荏原製作所股份有限公司 | 鍍覆裝置及鍍覆方法 |
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CN114645311A (zh) * | 2020-12-18 | 2022-06-21 | 盛美半导体设备(上海)股份有限公司 | 基板保持装置的杯形夹盘及基板保持装置 |
US20240003039A1 (en) * | 2022-06-29 | 2024-01-04 | Xiamen Hithium Energy Storage Technology Co.,Ltd.. | Film plating machine and electroplating production line |
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KR102446560B1 (ko) | 2022-09-26 |
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JP6994273B2 (ja) | 2022-01-14 |
KR20200052306A (ko) | 2020-05-14 |
CN111032925A (zh) | 2020-04-17 |
US20210066106A1 (en) | 2021-03-04 |
US11469134B2 (en) | 2022-10-11 |
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