JP2020532127A5 - - Google Patents

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Publication number
JP2020532127A5
JP2020532127A5 JP2020511294A JP2020511294A JP2020532127A5 JP 2020532127 A5 JP2020532127 A5 JP 2020532127A5 JP 2020511294 A JP2020511294 A JP 2020511294A JP 2020511294 A JP2020511294 A JP 2020511294A JP 2020532127 A5 JP2020532127 A5 JP 2020532127A5
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JP
Japan
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layer
model
effective medium
thickness
medium dispersion
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JP2020511294A
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English (en)
Japanese (ja)
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JP7369116B2 (ja
JP2020532127A (ja
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Priority claimed from US15/800,877 external-priority patent/US10663286B2/en
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Publication of JP2020532127A5 publication Critical patent/JP2020532127A5/ja
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JP2020511294A 2017-08-22 2018-08-21 薄膜オン格子及びバンドギャップオン格子の計測 Active JP7369116B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762548579P 2017-08-22 2017-08-22
US62/548,579 2017-08-22
US15/800,877 US10663286B2 (en) 2017-08-22 2017-11-01 Measuring thin films on grating and bandgap on grating
US15/800,877 2017-11-01
PCT/US2018/047363 WO2019040515A1 (en) 2017-08-22 2018-08-21 MEASUREMENT OF THIN LAYERS ON NETWORK AND BAND PROHIBITED ON NETWORK

Publications (3)

Publication Number Publication Date
JP2020532127A JP2020532127A (ja) 2020-11-05
JP2020532127A5 true JP2020532127A5 (enExample) 2021-09-30
JP7369116B2 JP7369116B2 (ja) 2023-10-25

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JP2020511294A Active JP7369116B2 (ja) 2017-08-22 2018-08-21 薄膜オン格子及びバンドギャップオン格子の計測

Country Status (6)

Country Link
US (2) US10663286B2 (enExample)
JP (1) JP7369116B2 (enExample)
KR (1) KR102618382B1 (enExample)
CN (1) CN111052327B (enExample)
TW (1) TWI808984B (enExample)
WO (1) WO2019040515A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114324184B (zh) * 2021-12-30 2024-05-17 粤芯半导体技术股份有限公司 椭偏仪光谱浮动模型及建立方法
KR102567843B1 (ko) * 2023-02-13 2023-08-17 (주)오로스 테크놀로지 다층 박막 구조물의 두께 분석 시스템 및 방법
US12379672B2 (en) 2023-05-11 2025-08-05 Kla Corporation Metrology of nanosheet surface roughness and profile
US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US12380367B2 (en) 2023-06-30 2025-08-05 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP3937149B2 (ja) * 2002-04-12 2007-06-27 株式会社堀場製作所 分光エリプソメータを用いた極薄膜2層構造の解析方法
JP3928714B2 (ja) * 2002-09-02 2007-06-13 株式会社堀場製作所 分光エリプソメータを用いた薄膜複数層構造の解析方法
EP1435517B1 (en) * 2001-09-06 2011-06-15 Horiba, Ltd. Method for analyzing thin-film layer structure using spectroscopic ellipsometer
JP2004294210A (ja) * 2003-03-26 2004-10-21 Sharp Corp 微細物評価装置、微細物評価方法および微細物評価プログラム
KR100508696B1 (ko) * 2003-12-01 2005-08-17 학교법인 서강대학교 구리배선용 초저유전 절연막
US7065737B2 (en) * 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
JP4435298B2 (ja) * 2004-03-30 2010-03-17 株式会社堀場製作所 試料解析方法
US7465590B1 (en) 2005-06-30 2008-12-16 Nanometrics Incorporated Measurement of a sample using multiple models
EP1780499A1 (de) 2005-10-28 2007-05-02 Hch. Kündig & Cie. AG Verfahren zum Messen der Dicke von Mehrschichtfolien
US20090219537A1 (en) * 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8019458B2 (en) 2008-08-06 2011-09-13 Tokyo Electron Limited Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures
CN101887140A (zh) * 2010-05-26 2010-11-17 中国科学院上海光学精密机械研究所 宽带全介质多层膜反射衍射光栅及其设计方法
US9442063B2 (en) * 2011-06-27 2016-09-13 Kla-Tencor Corporation Measurement of composition for thin films
US8804106B2 (en) * 2011-06-29 2014-08-12 Kla-Tencor Corporation System and method for nondestructively measuring concentration and thickness of doped semiconductor layers
JP5721586B2 (ja) * 2011-08-12 2015-05-20 大塚電子株式会社 光学特性測定装置および光学特性測定方法
US8711349B2 (en) 2011-09-27 2014-04-29 Kla-Tencor Corporation High throughput thin film characterization and defect detection
US8860937B1 (en) * 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US20140118360A1 (en) * 2012-10-30 2014-05-01 Pixtronix, Inc. Thinfilm stacks for light modulating displays

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