TWI808984B - 用於量測薄膜之方法、電腦程式產品及系統 - Google Patents
用於量測薄膜之方法、電腦程式產品及系統 Download PDFInfo
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- TWI808984B TWI808984B TW107128261A TW107128261A TWI808984B TW I808984 B TWI808984 B TW I808984B TW 107128261 A TW107128261 A TW 107128261A TW 107128261 A TW107128261 A TW 107128261A TW I808984 B TWI808984 B TW I808984B
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- Prior art keywords
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- effective medium
- dispersion model
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Links
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- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000004590 computer program Methods 0.000 title claims description 4
- 239000006185 dispersion Substances 0.000 claims abstract description 308
- 239000010408 film Substances 0.000 claims abstract description 122
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 57
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910010041 TiAlC Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
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- 239000004065 semiconductor Substances 0.000 abstract description 16
- 229910052718 tin Inorganic materials 0.000 description 60
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
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- 230000005540 biological transmission Effects 0.000 description 8
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- 244000201986 Cassia tora Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762548579P | 2017-08-22 | 2017-08-22 | |
| US62/548,579 | 2017-08-22 | ||
| US15/800,877 US10663286B2 (en) | 2017-08-22 | 2017-11-01 | Measuring thin films on grating and bandgap on grating |
| US15/800,877 | 2017-11-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201920899A TW201920899A (zh) | 2019-06-01 |
| TWI808984B true TWI808984B (zh) | 2023-07-21 |
Family
ID=65434158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107128261A TWI808984B (zh) | 2017-08-22 | 2018-08-14 | 用於量測薄膜之方法、電腦程式產品及系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10663286B2 (enExample) |
| JP (1) | JP7369116B2 (enExample) |
| KR (1) | KR102618382B1 (enExample) |
| CN (1) | CN111052327B (enExample) |
| TW (1) | TWI808984B (enExample) |
| WO (1) | WO2019040515A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114324184B (zh) * | 2021-12-30 | 2024-05-17 | 粤芯半导体技术股份有限公司 | 椭偏仪光谱浮动模型及建立方法 |
| KR102567843B1 (ko) * | 2023-02-13 | 2023-08-17 | (주)오로스 테크놀로지 | 다층 박막 구조물의 두께 분석 시스템 및 방법 |
| US12379672B2 (en) | 2023-05-11 | 2025-08-05 | Kla Corporation | Metrology of nanosheet surface roughness and profile |
| US12372882B2 (en) | 2023-06-30 | 2025-07-29 | Kla Corporation | Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures |
| US12380367B2 (en) | 2023-06-30 | 2025-08-05 | Kla Corporation | Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW473892B (en) * | 1999-11-05 | 2002-01-21 | Nippon Electric Co | Semiconductor device tester |
| JP2004093436A (ja) * | 2002-09-02 | 2004-03-25 | Horiba Ltd | 分光エリプソメータを用いた薄膜多層構造の解析方法 |
| JP2004294210A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 微細物評価装置、微細物評価方法および微細物評価プログラム |
| TW200534362A (en) * | 2004-03-01 | 2005-10-16 | Advanced Micro Devices Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3937149B2 (ja) * | 2002-04-12 | 2007-06-27 | 株式会社堀場製作所 | 分光エリプソメータを用いた極薄膜２層構造の解析方法 |
| EP1435517B1 (en) * | 2001-09-06 | 2011-06-15 | Horiba, Ltd. | Method for analyzing thin-film layer structure using spectroscopic ellipsometer |
| KR100508696B1 (ko) * | 2003-12-01 | 2005-08-17 | 학교법인 서강대학교 | 구리배선용 초저유전 절연막 |
| JP4435298B2 (ja) * | 2004-03-30 | 2010-03-17 | 株式会社堀場製作所 | 試料解析方法 |
| US7465590B1 (en) | 2005-06-30 | 2008-12-16 | Nanometrics Incorporated | Measurement of a sample using multiple models |
| EP1780499A1 (de) | 2005-10-28 | 2007-05-02 | Hch. Kündig & Cie. AG | Verfahren zum Messen der Dicke von Mehrschichtfolien |
| US20090219537A1 (en) * | 2008-02-28 | 2009-09-03 | Phillip Walsh | Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths |
| US8019458B2 (en) | 2008-08-06 | 2011-09-13 | Tokyo Electron Limited | Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures |
| CN101887140A (zh) * | 2010-05-26 | 2010-11-17 | 中国科学院上海光学精密机械研究所 | 宽带全介质多层膜反射衍射光栅及其设计方法 |
| US9442063B2 (en) * | 2011-06-27 | 2016-09-13 | Kla-Tencor Corporation | Measurement of composition for thin films |
| US8804106B2 (en) * | 2011-06-29 | 2014-08-12 | Kla-Tencor Corporation | System and method for nondestructively measuring concentration and thickness of doped semiconductor layers |
| JP5721586B2 (ja) * | 2011-08-12 | 2015-05-20 | 大塚電子株式会社 | 光学特性測定装置および光学特性測定方法 |
| US8711349B2 (en) | 2011-09-27 | 2014-04-29 | Kla-Tencor Corporation | High throughput thin film characterization and defect detection |
| US8860937B1 (en) * | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
| US20140118360A1 (en) * | 2012-10-30 | 2014-05-01 | Pixtronix, Inc. | Thinfilm stacks for light modulating displays |
-
2017
- 2017-11-01 US US15/800,877 patent/US10663286B2/en active Active
-
2018
- 2018-08-14 TW TW107128261A patent/TWI808984B/zh active
- 2018-08-21 KR KR1020207008077A patent/KR102618382B1/ko active Active
- 2018-08-21 CN CN201880052036.0A patent/CN111052327B/zh active Active
- 2018-08-21 WO PCT/US2018/047363 patent/WO2019040515A1/en not_active Ceased
- 2018-08-21 JP JP2020511294A patent/JP7369116B2/ja active Active
-
2020
- 2020-04-15 US US16/848,945 patent/US11555689B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW473892B (en) * | 1999-11-05 | 2002-01-21 | Nippon Electric Co | Semiconductor device tester |
| JP2004093436A (ja) * | 2002-09-02 | 2004-03-25 | Horiba Ltd | 分光エリプソメータを用いた薄膜多層構造の解析方法 |
| JP2004294210A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 微細物評価装置、微細物評価方法および微細物評価プログラム |
| TW200534362A (en) * | 2004-03-01 | 2005-10-16 | Advanced Micro Devices Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102618382B1 (ko) | 2023-12-27 |
| JP7369116B2 (ja) | 2023-10-25 |
| JP2020532127A (ja) | 2020-11-05 |
| US20190063900A1 (en) | 2019-02-28 |
| WO2019040515A1 (en) | 2019-02-28 |
| CN111052327A (zh) | 2020-04-21 |
| US20200240768A1 (en) | 2020-07-30 |
| TW201920899A (zh) | 2019-06-01 |
| US10663286B2 (en) | 2020-05-26 |
| US11555689B2 (en) | 2023-01-17 |
| CN111052327B (zh) | 2023-12-08 |
| KR20200035164A (ko) | 2020-04-01 |
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