KR102618382B1 - 격자상의 박막들 및 격자상의 밴드갭 측정 - Google Patents
격자상의 박막들 및 격자상의 밴드갭 측정 Download PDFInfo
- Publication number
- KR102618382B1 KR102618382B1 KR1020207008077A KR20207008077A KR102618382B1 KR 102618382 B1 KR102618382 B1 KR 102618382B1 KR 1020207008077 A KR1020207008077 A KR 1020207008077A KR 20207008077 A KR20207008077 A KR 20207008077A KR 102618382 B1 KR102618382 B1 KR 102618382B1
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- South Korea
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- effective medium
- dispersion model
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- 238000005259 measurement Methods 0.000 title claims description 43
- 239000010409 thin film Substances 0.000 title abstract description 12
- 239000006185 dispersion Substances 0.000 claims abstract description 243
- 238000000034 method Methods 0.000 claims abstract description 132
- 239000012528 membrane Substances 0.000 claims abstract description 57
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 61
- 230000003287 optical effect Effects 0.000 claims description 60
- 238000004458 analytical method Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 37
- 230000004044 response Effects 0.000 claims description 30
- 230000003595 spectral effect Effects 0.000 claims description 19
- 238000002310 reflectometry Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000013500 data storage Methods 0.000 claims description 12
- 238000000391 spectroscopic ellipsometry Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 229910004143 HfON Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910010041 TiAlC Inorganic materials 0.000 claims description 5
- 238000000572 ellipsometry Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 67
- 238000009826 distribution Methods 0.000 abstract description 42
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 description 29
- 230000008569 process Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 230000002596 correlated effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 5
- 238000013400 design of experiment Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 208000013715 atelosteogenesis type I Diseases 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000000547 structure data Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 235000006719 Cassia obtusifolia Nutrition 0.000 description 1
- 235000014552 Cassia tora Nutrition 0.000 description 1
- 244000201986 Cassia tora Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010961 commercial manufacture process Methods 0.000 description 1
- 238000012777 commercial manufacturing Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000002872 contrast media Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- 238000003908 quality control method Methods 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762548579P | 2017-08-22 | 2017-08-22 | |
| US62/548,579 | 2017-08-22 | ||
| US15/800,877 | 2017-11-01 | ||
| US15/800,877 US10663286B2 (en) | 2017-08-22 | 2017-11-01 | Measuring thin films on grating and bandgap on grating |
| PCT/US2018/047363 WO2019040515A1 (en) | 2017-08-22 | 2018-08-21 | MEASUREMENT OF THIN LAYERS ON NETWORK AND BAND PROHIBITED ON NETWORK |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200035164A KR20200035164A (ko) | 2020-04-01 |
| KR102618382B1 true KR102618382B1 (ko) | 2023-12-27 |
Family
ID=65434158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207008077A Active KR102618382B1 (ko) | 2017-08-22 | 2018-08-21 | 격자상의 박막들 및 격자상의 밴드갭 측정 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10663286B2 (enExample) |
| JP (1) | JP7369116B2 (enExample) |
| KR (1) | KR102618382B1 (enExample) |
| CN (1) | CN111052327B (enExample) |
| TW (1) | TWI808984B (enExample) |
| WO (1) | WO2019040515A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114324184B (zh) * | 2021-12-30 | 2024-05-17 | 粤芯半导体技术股份有限公司 | 椭偏仪光谱浮动模型及建立方法 |
| KR102567843B1 (ko) * | 2023-02-13 | 2023-08-17 | (주)오로스 테크놀로지 | 다층 박막 구조물의 두께 분석 시스템 및 방법 |
| US12379672B2 (en) | 2023-05-11 | 2025-08-05 | Kla Corporation | Metrology of nanosheet surface roughness and profile |
| US12380367B2 (en) | 2023-06-30 | 2025-08-05 | Kla Corporation | Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling |
| US12372882B2 (en) | 2023-06-30 | 2025-07-29 | Kla Corporation | Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004093436A (ja) * | 2002-09-02 | 2004-03-25 | Horiba Ltd | 分光エリプソメータを用いた薄膜多層構造の解析方法 |
| JP2004294210A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 微細物評価装置、微細物評価方法および微細物評価プログラム |
| US20100141274A1 (en) | 2005-10-28 | 2010-06-10 | Hch. Kuendig & Cie. Ag | Method for Measuring the Thickness of Multi-Layer Films |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3749107B2 (ja) * | 1999-11-05 | 2006-02-22 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
| WO2003023373A1 (fr) * | 2001-09-06 | 2003-03-20 | Horiba, Ltd. | Procede pour analyser une structure stratifiee en film mince au moyen d'un ellipsometre spectroscopique |
| JP3937149B2 (ja) * | 2002-04-12 | 2007-06-27 | 株式会社堀場製作所 | 分光エリプソメータを用いた極薄膜２層構造の解析方法 |
| KR100508696B1 (ko) * | 2003-12-01 | 2005-08-17 | 학교법인 서강대학교 | 구리배선용 초저유전 절연막 |
| US7065737B2 (en) * | 2004-03-01 | 2006-06-20 | Advanced Micro Devices, Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
| JP4435298B2 (ja) * | 2004-03-30 | 2010-03-17 | 株式会社堀場製作所 | 試料解析方法 |
| US7465590B1 (en) | 2005-06-30 | 2008-12-16 | Nanometrics Incorporated | Measurement of a sample using multiple models |
| US20090219537A1 (en) * | 2008-02-28 | 2009-09-03 | Phillip Walsh | Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths |
| US8019458B2 (en) | 2008-08-06 | 2011-09-13 | Tokyo Electron Limited | Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures |
| CN101887140A (zh) * | 2010-05-26 | 2010-11-17 | 中国科学院上海光学精密机械研究所 | 宽带全介质多层膜反射衍射光栅及其设计方法 |
| US9442063B2 (en) * | 2011-06-27 | 2016-09-13 | Kla-Tencor Corporation | Measurement of composition for thin films |
| US8804106B2 (en) * | 2011-06-29 | 2014-08-12 | Kla-Tencor Corporation | System and method for nondestructively measuring concentration and thickness of doped semiconductor layers |
| JP5721586B2 (ja) * | 2011-08-12 | 2015-05-20 | 大塚電子株式会社 | 光学特性測定装置および光学特性測定方法 |
| KR101906647B1 (ko) | 2011-09-27 | 2018-10-10 | 케이엘에이-텐코 코포레이션 | 고처리량 박막 특성화 및 결함 검출 |
| US8860937B1 (en) * | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
| US20140118360A1 (en) * | 2012-10-30 | 2014-05-01 | Pixtronix, Inc. | Thinfilm stacks for light modulating displays |
-
2017
- 2017-11-01 US US15/800,877 patent/US10663286B2/en active Active
-
2018
- 2018-08-14 TW TW107128261A patent/TWI808984B/zh active
- 2018-08-21 JP JP2020511294A patent/JP7369116B2/ja active Active
- 2018-08-21 CN CN201880052036.0A patent/CN111052327B/zh active Active
- 2018-08-21 KR KR1020207008077A patent/KR102618382B1/ko active Active
- 2018-08-21 WO PCT/US2018/047363 patent/WO2019040515A1/en not_active Ceased
-
2020
- 2020-04-15 US US16/848,945 patent/US11555689B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004093436A (ja) * | 2002-09-02 | 2004-03-25 | Horiba Ltd | 分光エリプソメータを用いた薄膜多層構造の解析方法 |
| JP2004294210A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 微細物評価装置、微細物評価方法および微細物評価プログラム |
| US20100141274A1 (en) | 2005-10-28 | 2010-06-10 | Hch. Kuendig & Cie. Ag | Method for Measuring the Thickness of Multi-Layer Films |
Also Published As
| Publication number | Publication date |
|---|---|
| US10663286B2 (en) | 2020-05-26 |
| WO2019040515A1 (en) | 2019-02-28 |
| US11555689B2 (en) | 2023-01-17 |
| TW201920899A (zh) | 2019-06-01 |
| US20200240768A1 (en) | 2020-07-30 |
| CN111052327A (zh) | 2020-04-21 |
| US20190063900A1 (en) | 2019-02-28 |
| JP2020532127A (ja) | 2020-11-05 |
| JP7369116B2 (ja) | 2023-10-25 |
| TWI808984B (zh) | 2023-07-21 |
| CN111052327B (zh) | 2023-12-08 |
| KR20200035164A (ko) | 2020-04-01 |
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