JP2020532080A - 有機電子装置の製造方法 - Google Patents
有機電子装置の製造方法 Download PDFInfo
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- JP2020532080A JP2020532080A JP2020512465A JP2020512465A JP2020532080A JP 2020532080 A JP2020532080 A JP 2020532080A JP 2020512465 A JP2020512465 A JP 2020512465A JP 2020512465 A JP2020512465 A JP 2020512465A JP 2020532080 A JP2020532080 A JP 2020532080A
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- ALIATVYMFGMEJC-UHFFFAOYSA-N phenyl-[2,4,6-tris(methylamino)phenyl]methanone Chemical compound CNC1=CC(NC)=CC(NC)=C1C(=O)C1=CC=CC=C1 ALIATVYMFGMEJC-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
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- 125000005504 styryl group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- MVQLEZWPIWKLBY-UHFFFAOYSA-N tert-butyl 2-benzoylbenzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 MVQLEZWPIWKLBY-UHFFFAOYSA-N 0.000 description 1
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- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
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- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H—ELECTRICITY
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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Abstract
Description
本出願は2017年9月1日付韓国特許出願第10−2017−0111730号に基づいた優先権の利益を主張し、該当韓国特許出願の文献に開示されたすべての内容は本明細書の一部として含まれる。
本出願は有機電子装置の製造方法および有機電子装置に関する。
常温でエポキシ化合物として、脂環族エポキシ化合物(Daicel社Celloxide 2021P)および脂肪族エポキシ化合物(HAJIN CHEM TECH社、DE200)、オキセタン基含有化合物(TOAGOSEI社のOXT−221)、ヨードニウム塩を含む光開始剤(Tetrachem社のTTA−UV694、以下、UV694)およびフッ素系界面活性剤(DIC社のF552)をそれぞれ23.8:28.7:37.5:5.0:1.0(Celloxide2021P:DE200:OXT−221:UV694:F552)の重量比率で混合容器に投入した。
前記製造されたインク組成物を、Unijet UJ−200(Inkjet head−Dimatix 10Pl 256)を使って有機電子素子が形成された基板上にインクジェッティングして、1×10cmのパターン大きさおよび10μm厚さの有機層を形成した。前記塗布されたインク組成物に対して、ホットプレート(Hot plate)を利用して100℃で3分間熱処理をした。前記インク組成物に対して5%の相対湿度条件で395nm波長および1000mW/cm2の強度で1J/cm2のUVを照射して硬化させて有機電子装置を製造した。
塗布されたインク組成物に対して25℃で3分間熱処理をし、硬化後、60℃で30分間さらに熱処理を進行したことを除いては、実施例1と同じ方法で有機電子装置を製造した。
塗布されたインク組成物に対して30℃で10分間熱処理をし、硬化後、150℃で3分間さらに熱処理を進行したことを除いては、実施例1と同じ方法で有機電子装置を製造した。
塗布されたインク組成物に対して硬化前25℃で3分間熱処理をしたことを除いては、実施例1と同じ方法で有機電子装置を製造した。
塗布されたインク組成物に対して60℃で10分間熱処理をし、硬化後、200℃で10分間さらに熱処理を進行したことを除いては、実施例1と同じ方法で有機電子装置を製造した。
塗布されたインク組成物に対して30℃で10分間熱処理をし、硬化後、120℃で90分間さらに熱処理を進行したことを除いては、実施例1と同じ方法で有機電子装置を製造した。
熱処理を進行しなかったことを除いては、実施例1と同じ方法で有機電子装置を製造した。
硬化前熱処理は進行せず、硬化後150℃で3分間熱処理を進行したことを除いては、実施例1と同じ方法で有機電子装置を製造した。
硬化段階で、5%の相対湿度条件で255nm波長範囲および1000mW/cm2の強度で1J/cm2のUVを照射して硬化させて有機電子装置を製造したことを除いては、実施例3と同じ方法で有機電子装置を製造した。
実施例および比較例で形成した有機層パターンに対してパターンの中央部の厚さAを測定し、同時にパターンの縁側面の最も厚い領域を厚さBと測定する。この時、(B−A)/A×100で計算して前記パターンの段差がパターンの厚さ対比どれほど発生したかを測定する。段差が10%以下である場合は優秀、20%以下である場合は良好、20%超過である場合は悪いに分類した。
実施例および比較例で硬化したインク組成物に対して、110℃で30分の間維持した後、Purge&Trap sampler(JAI JTD−505III)−GC/MS(Agilent 7890b/5977a)機器を使ってパージ&トラップ(Purge & Trap)−気体クロマトグラフィー/質量分析法を利用してアウトガス量を測定した。50ppm未満の場合◎、100ppm未満の場合O、150ppm未満の場合△、150ppm以上の場合Xに分類した。
実施例および比較例で製造された有機電子装置を85℃85%RH恒温、恒湿条件でダークスポットを観察する。300時間の間観察して、生成されるダークスポットがない場合とある場合をチェックする。ダークスポットが全く発生しない場合◎、ダークスポットが1個以下に発生した場合O、ダークスポットが5個以下に発生した場合△、ダークスポットが5個超過に観察される場合Xに分類した。
31:基板
32:有機電子素子
33:有機層
34:無機層
35:無機保護膜
36:封止構造
37:封止フィルム
38:カバー基板
Claims (15)
- 有機電子素子が形成された基板上にインク組成物を塗布する段階と、塗布されたインク組成物を硬化する前に熱を加える段階と、300nm〜450nm範囲の波長を有する光を照射して前記塗布されたインク組成物を硬化する段階とを含む、有機電子装置製造方法。
- 硬化後に熱を加える段階をさらに含む、請求項1に記載の有機電子装置製造方法。
- 熱を加える段階は、20℃〜230℃の範囲内で進行される、請求項1または請求項2に記載の有機電子装置製造方法。
- 熱を加える段階は、1分〜40分のうちいずれかの時間の間進行される、請求項1または請求項2に記載の有機電子装置製造方法。
- 硬化前に熱を加える段階は20℃〜110℃の範囲内で進行され、硬化後に熱を加える段階は50℃〜230℃の範囲内で進行される、請求項2に記載の有機電子装置製造方法。
- 硬化前に熱を加える温度(T1)に対する硬化後に熱を加える温度(T2)の比(T2/T1)が1.15〜8の範囲内である、請求項2に記載の有機電子装置製造方法。
- 塗布されたインク組成物を硬化前に平坦化する段階をさらに含む、請求項1から6のいずれか一項に記載の有機電子装置製造方法。
- 平坦化する段階は、1分〜5分のうちいずれかの時間の間進行される、請求項7に記載の有機電子装置製造方法。
- インク組成物を塗布する段階は、インクジェット装置を利用してインク組成物を吐出することを含む、請求項1から8のいずれか一項に記載の有機電子装置製造方法。
- インク組成物は無溶剤タイプである、請求項1から9のいずれか一項に記載の有機電子装置製造方法。
- インク組成物は光硬化性組成物である、請求項1から10のいずれか一項に記載の有機電子装置製造方法。
- 塗布されたインク組成物に対して硬化後110℃で30分の間維持した後、パージ&トラップ(Purge & Trap)−気体クロマトグラフィー/質量分析法を利用して測定したアウトガス量が150ppm未満である、請求項1から11のいずれか一項に記載の有機電子装置製造方法。
- 基板と、前記基板上に形成された有機電子素子と、前記有機電子素子を全面密封する有機層とを含み、前記有機層は110℃で30分の間維持した後、パージ&トラップ(Purge & Trap)−気体クロマトグラフィー/質量分析法を利用して測定したアウトガス量が150ppm未満である、有機電子装置。
- 前記有機層と前記有機電子素子の間に無機保護膜をさらに含む、請求項13に記載の有機電子装置。
- 前記有機層上に形成された無機層をさらに含む、請求項13または14に記載の有機電子装置。
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