JP2020524407A - 半導体レーザーダイオード - Google Patents

半導体レーザーダイオード Download PDF

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Publication number
JP2020524407A
JP2020524407A JP2019570091A JP2019570091A JP2020524407A JP 2020524407 A JP2020524407 A JP 2020524407A JP 2019570091 A JP2019570091 A JP 2019570091A JP 2019570091 A JP2019570091 A JP 2019570091A JP 2020524407 A JP2020524407 A JP 2020524407A
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JP
Japan
Prior art keywords
layer
laser diode
semiconductor
cladding layer
region
Prior art date
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Pending
Application number
JP2019570091A
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English (en)
Japanese (ja)
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JP2020524407A5 (enExample
Inventor
ゲアハート スヴェン
ゲアハート スヴェン
アイヒラー クリストフ
アイヒラー クリストフ
レル アルフレート
レル アルフレート
シュトイェッツ ベアンハート
シュトイェッツ ベアンハート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2020524407A publication Critical patent/JP2020524407A/ja
Publication of JP2020524407A5 publication Critical patent/JP2020524407A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2019570091A 2017-06-19 2018-06-08 半導体レーザーダイオード Pending JP2020524407A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017113389.5 2017-06-19
DE102017113389.5A DE102017113389B4 (de) 2017-06-19 2017-06-19 Halbleiterlaserdiode
PCT/EP2018/065185 WO2018234068A1 (de) 2017-06-19 2018-06-08 Halbleiterlaserdiode

Publications (2)

Publication Number Publication Date
JP2020524407A true JP2020524407A (ja) 2020-08-13
JP2020524407A5 JP2020524407A5 (enExample) 2020-09-24

Family

ID=62631062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019570091A Pending JP2020524407A (ja) 2017-06-19 2018-06-08 半導体レーザーダイオード

Country Status (5)

Country Link
US (3) US11336078B2 (enExample)
JP (1) JP2020524407A (enExample)
CN (2) CN114243448B (enExample)
DE (1) DE102017113389B4 (enExample)
WO (1) WO2018234068A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017113389B4 (de) * 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
CN112997407B (zh) 2018-10-30 2024-05-17 埃赛力达加拿大有限公司 采用引线框架和薄介电层掩膜焊垫限定的低电感激光驱动器封装
US11264778B2 (en) 2018-11-01 2022-03-01 Excelitas Canada, Inc. Quad flat no-leads package for side emitting laser diode
WO2020142292A1 (en) * 2018-12-31 2020-07-09 Nlight, Inc. Method, system, apparatus for differential current injection
DE102019102499A1 (de) 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung
DE102019106536B4 (de) * 2019-03-14 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子
DE102020108941B4 (de) 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
FR3109020B1 (fr) * 2020-04-06 2022-02-25 Scintil Photonics Dispositif photonique pour etablir un rayonnement lumineux comprenant un mode optique dans un guide d'onde
DE102022106173A1 (de) * 2022-03-16 2023-09-21 Ams-Osram International Gmbh Licht emittierende diode
DE102022110694A1 (de) 2022-05-02 2023-11-02 Ams-Osram International Gmbh Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements
FR3150347A1 (fr) * 2023-06-22 2024-12-27 Thales Composant optoélectronique à semi-conducteur ayant une dissipation thermique améliorée

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220212A (ja) * 1998-02-02 1999-08-10 Toshiba Corp 光素子、光素子の駆動方法及び半導体レーザ素子
JP2004031823A (ja) * 2002-06-27 2004-01-29 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP2010080960A (ja) * 2008-09-24 2010-04-08 Palo Alto Research Center Inc 半導体発光デバイス
JP2012044171A (ja) * 2010-08-20 2012-03-01 Chi Mei Lighting Technology Corp 発光ダイオード構造及びその製造方法
US20150194788A1 (en) * 2012-07-24 2015-07-09 Osram Opto Semiconductors Gmbh Ridge laser
JP2016201474A (ja) * 2015-04-10 2016-12-01 日本電信電話株式会社 リッジ導波路型半導体レーザ

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US6990132B2 (en) 2003-03-20 2006-01-24 Xerox Corporation Laser diode with metal-oxide upper cladding layer
DE10339985B4 (de) 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
CN101431215A (zh) * 2003-12-22 2009-05-13 松下电器产业株式会社 半导体激光装置和激光投影装置
US7279751B2 (en) 2004-06-21 2007-10-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and manufacturing method thereof
GB2432456A (en) 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
JP5072372B2 (ja) 2007-01-16 2012-11-14 株式会社東芝 遠隔監視・診断システム
DE102007029370A1 (de) 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP5020866B2 (ja) * 2007-05-07 2012-09-05 キヤノン株式会社 垂直共振器型面発光レーザ
JP2009088425A (ja) 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
DE102008014093B4 (de) * 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ
KR100945993B1 (ko) * 2008-03-06 2010-03-09 삼성전기주식회사 반도체 레이저 다이오드
DE102008035784A1 (de) * 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
DE102010002966B4 (de) * 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
DE102011054954A1 (de) * 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
JP6414464B2 (ja) 2014-12-24 2018-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102015116336B4 (de) * 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102015116335B4 (de) 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN105811242A (zh) 2016-04-28 2016-07-27 中国科学院长春光学精密机械与物理研究所 周期性金属接触增益耦合分布反馈半导体激光器
DE102016125857B4 (de) 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017113389B4 (de) * 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220212A (ja) * 1998-02-02 1999-08-10 Toshiba Corp 光素子、光素子の駆動方法及び半導体レーザ素子
JP2004031823A (ja) * 2002-06-27 2004-01-29 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP2010080960A (ja) * 2008-09-24 2010-04-08 Palo Alto Research Center Inc 半導体発光デバイス
JP2012044171A (ja) * 2010-08-20 2012-03-01 Chi Mei Lighting Technology Corp 発光ダイオード構造及びその製造方法
US20150194788A1 (en) * 2012-07-24 2015-07-09 Osram Opto Semiconductors Gmbh Ridge laser
JP2016201474A (ja) * 2015-04-10 2016-12-01 日本電信電話株式会社 リッジ導波路型半導体レーザ

Also Published As

Publication number Publication date
US11695253B2 (en) 2023-07-04
US11336078B2 (en) 2022-05-17
US12062887B2 (en) 2024-08-13
CN110770985A (zh) 2020-02-07
DE102017113389B4 (de) 2021-07-29
US20220239069A1 (en) 2022-07-28
DE102017113389A1 (de) 2018-12-20
CN114243448A (zh) 2022-03-25
US20230299562A1 (en) 2023-09-21
CN110770985B (zh) 2021-12-17
WO2018234068A1 (de) 2018-12-27
CN114243448B (zh) 2024-08-02
US20200161836A1 (en) 2020-05-21

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