JP2020520549A - 基板をアライメントする装置、システム及び方法 - Google Patents
基板をアライメントする装置、システム及び方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims description 44
- 238000012545 processing Methods 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims description 65
- 238000012546 transfer Methods 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000010586 diagram Methods 0.000 abstract description 10
- 230000032258 transport Effects 0.000 description 35
- 239000000463 material Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Abstract
Description
Claims (15)
- 真空チャンバ(101)内で基板(10)を処理する装置(100)であって、
第1の搬送路に沿って第1の方向(X)に第1のキャリア(11)を搬送する第1のキャリア搬送システム(31)と、
第2の搬送路に沿って前記第1の方向(X)に第2のキャリア(12)を搬送する第2のキャリア搬送システム(32)と
前記第1のキャリア(11)と前記第2のキャリア(12)との間の距離を測定する測定システム(130)であって、前記距離は前記第1の方向(X)に対して直交方向の距離である、測定システム(130)と
を備える、装置(100)。 - 前記測定システム(130)は、
第1の位置(P1)において前記第1のキャリア(11)と前記第2のキャリア(12)との間の第1の距離(D1)を測定する第1の測定デバイス(131A)と、
前記第1の位置(P1)とは異なる第2の位置(P2)において前記第1のキャリア(11)と前記第2のキャリア(12)との間の第2の距離(D2)を測定する第2の測定デバイス(131B)と
を備える、請求項1に記載の装置(100)。 - 前記第1の測定デバイス(131A)は第1の光学測定デバイス、とりわけ第1の共焦点センサであり、前記第2の測定デバイス(131B)は第2の光学測定デバイス、とりわけ第2の共焦点センサである、請求項2に記載の装置(100)。
- 前記第1の測定デバイス(131A)と前記第2の測定デバイス(131B)は、保持機構(132)によって固定的に接続されている、請求項2又は3に記載の装置(100)。
- 前記測定システム(130)は、前記第1の測定デバイス(131A)と前記第2の測定デバイス(131B)とを前記第1の方向(X)に対して直交方向に移動させる線形アクチュエータ(135)を備える、請求項2から4のいずれか一項に記載の装置(100)。
- 前記測定システム(130)は、前記第1の測定デバイス(131A)と前記第2の測定デバイス(131B)の動きを、前記第1の方向(X)に対して直交方向に案内する案内機構を備える、請求項2から5のいずれか一項に記載の装置(100)。
- 前記測定システム(130)は、前記第1の位置(P1)及び前記第2の位置(P2)とは異なる第3の位置(P3)において前記第1のキャリア(11)と前記第2のキャリア(12)との間の第3の距離(D3)を測定する第3の測定デバイス(131C)を備える、請求項2から6のいずれか一項に記載の装置(100)。
- 前記測定システム(130)は、前記第1の位置(P1)、前記第2の位置(P2)及び前記第3の位置(P3)とは異なる第4の位置(P4)において前記第1のキャリア(11)と前記第2のキャリア(12)との間の第4の距離(D4)を測定する第4の測定デバイス(131D)を備える、請求項2から7のいずれか一項に記載の装置(100)。
- 前記第3の測定デバイス(131C)と前記第4の測定デバイス(131D)は、別の保持機構、とりわけ前記第1の方向(X)に対して直交方向の動きを提供する別の線形アクチュエータ(145)に接続されている別の保持機構(142)によって、固定的に接続されている、請求項7又は8に記載の装置(100)。
- 前記測定システム(130)は、前記測定システムを前記真空チャンバの壁に接続する装着アセンブリを備える、請求項1から9のいずれか一項に記載の装置(100)。
- 真空チャンバ(101)内で基板(10)を処理する装置(100)であって、
第1の搬送路に沿って第1の方向(X)に第1のキャリア(11)を搬送する第1のキャリア搬送システム(31)と、
第2の搬送路に沿って前記第1の方向(X)に第2のキャリア(12)を搬送する第2のキャリア搬送システム(32)と
前記第1のキャリア(11)によって担持された前記基板(10)と前記第2のキャリア(12)によって担持されたマスク(20)との間の距離を測定する測定システム(130)であって、前記距離は前記第1の方向(X)に対して直交方向の距離である、測定システム(130)と、
を備え、
前記測定システム(130)は、
第1の位置(P1)において前記第1のキャリア(11)によって担持された前記基板(10)と前記第2のキャリア(12)によって担持された前記マスク(20)との間の第1の距離(D1)を測定する、第1の共焦点センサである第1の測定デバイス(131A)と、
前記第1の位置(P1)とは異なる第2の位置(P2)において前記第1のキャリア(11)によって担持された前記基板(10)と前記第2のキャリア(12)によって担持された前記マスク(20)との間の第2の距離(D2)を測定する、第2の共焦点センサである第2の測定デバイス(131B)と、
前記第1の位置(P1)及び前記第2の位置(P2)とは異なる第3の位置(P3)において前記第1のキャリア(11)によって担持された前記基板(10)と前記第2のキャリア(12)によって担持された前記マスク(20)との間の第3の距離(D3)を測定する、第3の共焦点センサである第3の測定デバイス(131C)と
を備え、
前記第1の測定デバイス(131A)、前記第2の測定デバイス(131B)及び前記第3の測定デバイス(131C)は線形アクチュエータに連結され、前記線形アクチュエータは、前記第1の方向(X)に対して直交方向の動きを提供するように構成されている、装置(100)。 - 基板を処理するシステムであって、請求項1から11のいずれか一項に記載の装置(100)を備え、第1のキャリア(11)と第2のキャリア(12)とを備え、前記第1のキャリア(11)は基板キャリアであり、前記第2のキャリア(12)はマスクキャリアであり、前記第1のキャリアは、前記測定システム(130)の個々の測定デバイスを受容する貫通孔を備える、システム。
- 第1のキャリア(11)と第2のキャリア(12)との間の距離を測定する方法であって、
真空チャンバ内の第1の位置に前記第1のキャリアを提供することと、
前記第2のキャリアが前記第1のキャリアに対して実質的に平行であるように、真空チャンバ内の第2の位置に前記第2のキャリアを提供することと、
測定システムの測定デバイスを前記第1のキャリアの個々の貫通孔の中へ導入することと、
前記第1のキャリアに対して前記測定デバイスの位置を固定することと、
前記測定デバイスを用いることによって前記第1のキャリアと前記第2のキャリアとの間の前記距離を測定することと
を含む方法。 - 前記第1のキャリア(11)と前記第2のキャリア(12)との間の前記距離を測定することは、少なくとも3つの異なる位置、とりわけ前記第1のキャリアの少なくとも3つの角において前記距離を測定することを含む、請求項13に記載の方法。
- 第1のキャリア(11)を第2のキャリア(12)に対してアライメントする方法であって、
少なくとも3つの異なる位置において第1のキャリアと前記第2のキャリアとの間の少なくとも3つの距離を測定することと、
測定された前記少なくとも3つの距離間の差を特定することと、
測定された前記少なくとも3つの距離間の差がなくなるように、前記第1のキャリアを前記第2のキャリアに対して移動させること
を含む方法。
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JP2022057675A (ja) * | 2020-09-30 | 2022-04-11 | キヤノントッキ株式会社 | 成膜装置、検知装置、検知方法、及び電子デバイスの製造方法 |
JP2022057673A (ja) * | 2020-09-30 | 2022-04-11 | キヤノントッキ株式会社 | 成膜装置、調整装置、調整方法、及び電子デバイスの製造方法 |
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