JP2020519018A5 - - Google Patents

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Publication number
JP2020519018A5
JP2020519018A5 JP2019559058A JP2019559058A JP2020519018A5 JP 2020519018 A5 JP2020519018 A5 JP 2020519018A5 JP 2019559058 A JP2019559058 A JP 2019559058A JP 2019559058 A JP2019559058 A JP 2019559058A JP 2020519018 A5 JP2020519018 A5 JP 2020519018A5
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JP
Japan
Prior art keywords
high pressure
chamber
lift plate
pressure region
batch processing
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JP2019559058A
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English (en)
Japanese (ja)
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JP7235678B2 (ja
JP2020519018A (ja
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Priority claimed from PCT/US2018/028258 external-priority patent/WO2018204078A1/en
Publication of JP2020519018A publication Critical patent/JP2020519018A/ja
Publication of JP2020519018A5 publication Critical patent/JP2020519018A5/ja
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JP2019559058A 2017-05-01 2018-04-19 真空分離及び前処理環境を伴う高圧アニールチャンバ Active JP7235678B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762492700P 2017-05-01 2017-05-01
US62/492,700 2017-05-01
PCT/US2018/028258 WO2018204078A1 (en) 2017-05-01 2018-04-19 High pressure anneal chamber with vacuum isolation and pre-processing environment

Publications (3)

Publication Number Publication Date
JP2020519018A JP2020519018A (ja) 2020-06-25
JP2020519018A5 true JP2020519018A5 (https=) 2021-05-27
JP7235678B2 JP7235678B2 (ja) 2023-03-08

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ID=63917378

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JP2019559058A Active JP7235678B2 (ja) 2017-05-01 2018-04-19 真空分離及び前処理環境を伴う高圧アニールチャンバ

Country Status (6)

Country Link
US (1) US20180315626A1 (https=)
JP (1) JP7235678B2 (https=)
KR (1) KR20190137935A (https=)
CN (2) CN116504679A (https=)
TW (1) TW201842590A (https=)
WO (1) WO2018204078A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5541274B2 (ja) * 2011-12-28 2014-07-09 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP6050860B1 (ja) * 2015-05-26 2016-12-21 株式会社日本製鋼所 プラズマ原子層成長装置
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) * 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
TWI738002B (zh) * 2018-12-05 2021-09-01 洪義明 高溫烘箱的溫度調整設備
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
WO2020156660A1 (en) * 2019-01-30 2020-08-06 Applied Materials, Inc. Method for cleaning a vacuum system, method for vacuum processing of a substrate, and apparatus for vacuum processing a substrate
KR102823346B1 (ko) * 2019-03-22 2025-06-19 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법, 기판 처리 방법 및 프로그램
FI130051B (en) 2019-04-25 2023-01-13 Beneq Oy DEVICE AND METHOD
CN110133969B (zh) * 2019-04-26 2024-08-30 厦门通富微电子有限公司 一种用于烘烤光刻胶的烘烤设备、烘烤系统及烘烤方法
US11631571B2 (en) 2019-08-12 2023-04-18 Kurt J. Lesker Company Ultra high purity conditions for atomic scale processing
WO2021126697A1 (en) * 2019-12-20 2021-06-24 Applied Materials, Inc. Bake devices for handling and uniform baking of substrates
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US20210398824A1 (en) * 2020-06-19 2021-12-23 Applied Materials, Inc. Batch wafer degas chamber and integration into factory interface and vacuum-based mainframe
WO2022071105A1 (ja) * 2020-09-29 2022-04-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法及びプログラム
US12334308B2 (en) * 2021-08-24 2025-06-17 Samsung Electronics Co., Ltd. Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus
TWI775691B (zh) * 2021-12-02 2022-08-21 奈盾科技股份有限公司 半導體缺陷修復的裝置及方法
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법
US12221696B2 (en) 2022-05-27 2025-02-11 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability
US12456614B2 (en) 2022-05-27 2025-10-28 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability
US12428731B2 (en) 2022-07-12 2025-09-30 Applied Materials, Inc. Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability
US20240120220A1 (en) * 2022-10-06 2024-04-11 Applied Materials, Inc. Load lock chambers and related methods and structures for batch cooling or heating
US12467144B2 (en) 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods
US12243761B2 (en) 2022-10-27 2025-03-04 Applied Materials, Inc. Detection and analysis of substrate support and pre-heat ring in a process chamber via imaging
US12428753B2 (en) 2022-12-14 2025-09-30 Applied Materials, Inc. Lift assemblies, and related methods and components, for substrate processing chambers
DE102023111609A1 (de) 2023-05-04 2024-11-07 VON ARDENNE Asset GmbH & Co. KG Vakuumanordnung, eine Prozessanordnung und ein Verfahren zum Bewegen einer Haltevorrichtung einer Vakuumanordnung
CN117174620B (zh) * 2023-10-09 2025-02-25 宸微设备科技(苏州)有限公司 一种基片处理腔室
US12540400B2 (en) 2023-11-02 2026-02-03 Applied Materials, Inc. Multi-flow gas circuits, processing chambers, and related apparatus and methods for semiconductor manufacturing
KR102763911B1 (ko) * 2024-04-11 2025-02-10 (주) 예스티 히터 유닛의 탈착을 지원하는 지그 장치, 히터 유닛 탈착 시스템 및 히터 유닛의 탈착 가능한 고압 어닐링 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2766856B2 (ja) * 1988-11-11 1998-06-18 東京エレクトロン株式会社 縦型加圧酸化装置
JP3471100B2 (ja) * 1994-11-07 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置
JP3445148B2 (ja) * 1998-05-21 2003-09-08 株式会社神戸製鋼所 被処理基板の高温高圧処理装置
JP4207354B2 (ja) * 2000-03-07 2009-01-14 東京エレクトロン株式会社 熱処理装置及びその運用方法
JP2003077974A (ja) * 2001-08-31 2003-03-14 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20040060519A1 (en) * 2002-10-01 2004-04-01 Seh America Inc. Quartz to quartz seal using expanded PTFE gasket material
JP4456341B2 (ja) * 2003-06-30 2010-04-28 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
US7158221B2 (en) * 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US20060156979A1 (en) * 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
JP4683332B2 (ja) 2005-12-28 2011-05-18 株式会社Ihi 熱処理装置
JP2007242785A (ja) 2006-03-07 2007-09-20 Ihi Corp 熱処理装置及び熱処理方法
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
JP2013084643A (ja) 2011-10-06 2013-05-09 Nano Material Kenkyusho:Kk 半導体製造装置及び製造方法
KR101224520B1 (ko) 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
CN105164788B (zh) 2013-04-30 2020-02-14 应用材料公司 具有空间分布的气体通道的气流控制衬垫
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体

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