JP2020517570A5 - - Google Patents
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- JP2020517570A5 JP2020517570A5 JP2019558349A JP2019558349A JP2020517570A5 JP 2020517570 A5 JP2020517570 A5 JP 2020517570A5 JP 2019558349 A JP2019558349 A JP 2019558349A JP 2019558349 A JP2019558349 A JP 2019558349A JP 2020517570 A5 JP2020517570 A5 JP 2020517570A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- substrate
- ratio
- product
- etching rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005530 etching Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 235000019592 roughness Nutrition 0.000 description 9
- 238000003631 wet chemical etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022084208A JP7538175B2 (ja) | 2017-05-15 | 2022-05-24 | パルスレーザ光を用いた基板の加工、特に分離のための方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017110542 | 2017-05-15 | ||
| DE102017110542.5 | 2017-05-15 | ||
| PCT/EP2018/058882 WO2018210484A1 (de) | 2017-05-15 | 2018-04-06 | Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022084208A Division JP7538175B2 (ja) | 2017-05-15 | 2022-05-24 | パルスレーザ光を用いた基板の加工、特に分離のための方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020517570A JP2020517570A (ja) | 2020-06-18 |
| JP2020517570A5 true JP2020517570A5 (enExample) | 2021-04-22 |
| JP7396899B2 JP7396899B2 (ja) | 2023-12-12 |
Family
ID=61972103
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019558349A Active JP7396899B2 (ja) | 2017-05-15 | 2018-04-06 | パルスレーザ光を用いた基板の加工、特に分離のための方法 |
| JP2022084208A Active JP7538175B2 (ja) | 2017-05-15 | 2022-05-24 | パルスレーザ光を用いた基板の加工、特に分離のための方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022084208A Active JP7538175B2 (ja) | 2017-05-15 | 2022-05-24 | パルスレーザ光を用いた基板の加工、特に分離のための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11065716B2 (enExample) |
| EP (1) | EP3624982A1 (enExample) |
| JP (2) | JP7396899B2 (enExample) |
| KR (1) | KR102260931B1 (enExample) |
| CN (1) | CN110545948B (enExample) |
| WO (1) | WO2018210484A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2756175C1 (ru) * | 2020-03-30 | 2021-09-28 | Акционерное Общество "Государственный Научный Центр Российской Федерации Троицкий Институт Инновационных И Термоядерных Исследований" | Роботизированный лазерный комплекс и способ демонтажа металлоконструкций аэс |
| DE102020114195A1 (de) * | 2020-05-27 | 2021-12-02 | Lpkf Laser & Electronics Aktiengesellschaft | Verfahren zum Einbringen einer Ausnehmung in ein Substrat |
| EP4169068A4 (en) * | 2021-08-30 | 2024-07-31 | Absolics Inc. | Packaging substrate, semiconductor package, packaging substrate preparation method, and semiconductor package preparation method |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05185270A (ja) * | 1992-01-16 | 1993-07-27 | Kosaka Kenkyusho:Kk | ガラスパネルの割断方法 |
| JP3691221B2 (ja) * | 1997-09-24 | 2005-09-07 | 三菱電機株式会社 | レーザ加工方法 |
| US6709881B2 (en) * | 2000-11-28 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor and method for manufacturing semiconductor device |
| GB0315947D0 (en) * | 2003-07-08 | 2003-08-13 | Spectrum Technologies Plc | Laser removal of layer or coating from a substrate |
| JP4672689B2 (ja) | 2006-02-22 | 2011-04-20 | 日本板硝子株式会社 | レーザを用いたガラスの加工方法および加工装置 |
| US8703517B2 (en) * | 2010-10-29 | 2014-04-22 | Denso Corporation | Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer |
| EP2764376B1 (en) * | 2011-09-27 | 2016-11-16 | Chipworks, Incorporated | A method to differentiate p-channel or n-channel devices based on different etching rates. |
| JP6062287B2 (ja) * | 2013-03-01 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6186016B2 (ja) | 2013-04-04 | 2017-08-23 | エル・ピー・ケー・エフ・レーザー・ウント・エレクトロニクス・アクチエンゲゼルシヤフト | 基板に貫通穴を開ける方法及び装置 |
| CN103264227B (zh) * | 2013-04-11 | 2015-05-13 | 温州大学 | 一种激光直接刻蚀聚合物基体表面覆盖金属膜的方法 |
| CN103252262A (zh) * | 2013-04-15 | 2013-08-21 | 中国人民解放军军事医学科学院卫生学环境医学研究所 | 一种聚甲基丙烯酸甲酯材料微流控芯片加工技术方法 |
| CN105592994B (zh) * | 2013-08-07 | 2018-10-12 | 通快激光与系统工程有限公司 | 用于加工板状工件的方法和装置及由这类工件制成的产品 |
| US9517963B2 (en) * | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
| US20150243559A1 (en) * | 2014-02-27 | 2015-08-27 | Jungrae Park | Hybrid wafer dicing approach using temporally-controlled laser scribing process and plasma etch |
| JP6383977B2 (ja) * | 2014-06-27 | 2018-09-05 | Ａｇｃ株式会社 | ガラス基板の切断方法 |
| US10060673B2 (en) | 2014-07-02 | 2018-08-28 | Praxair Technology, Inc. | Argon condensation system and method |
| WO2016010949A1 (en) | 2014-07-14 | 2016-01-21 | Corning Incorporated | Method and system for forming perforations |
| LT3169477T (lt) * | 2014-07-14 | 2020-05-25 | Corning Incorporated | Skaidrių medžiagų apdorojimo sistema ir būdas, naudojant lazerio pluošto židinio linijas, kurių ilgis ir skersmuo yra reguliuojami |
| KR20180048891A (ko) | 2015-08-31 | 2018-05-10 | 닛본 이따 가라스 가부시끼가이샤 | 미세 구조를 갖는 유리의 제조 방법 |
| TW201831414A (zh) * | 2016-12-13 | 2018-09-01 | 美商康寧公司 | 藉由形成劃痕線來雷射處理透明工件的方法 |
-
2018
- 2018-04-06 EP EP18717553.4A patent/EP3624982A1/de active Pending
- 2018-04-06 KR KR1020197031695A patent/KR102260931B1/ko active Active
- 2018-04-06 WO PCT/EP2018/058882 patent/WO2018210484A1/de not_active Ceased
- 2018-04-06 CN CN201880025435.8A patent/CN110545948B/zh active Active
- 2018-04-06 US US16/613,444 patent/US11065716B2/en active Active
- 2018-04-06 JP JP2019558349A patent/JP7396899B2/ja active Active
-
2022
- 2022-05-24 JP JP2022084208A patent/JP7538175B2/ja active Active
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