JP6899653B2 - レーザー処理及び温度誘導ストレスを用いた複合ウェハー製造方法 - Google Patents
レーザー処理及び温度誘導ストレスを用いた複合ウェハー製造方法 Download PDFInfo
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- JP6899653B2 JP6899653B2 JP2016520685A JP2016520685A JP6899653B2 JP 6899653 B2 JP6899653 B2 JP 6899653B2 JP 2016520685 A JP2016520685 A JP 2016520685A JP 2016520685 A JP2016520685 A JP 2016520685A JP 6899653 B2 JP6899653 B2 JP 6899653B2
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
この発明の別の好ましい実施形態によれば、前記放射線源は、前記分離面を生成するために照射された光線が、前記固体物の中に、所定の深さに、特に100μmより浅く、貫通するように構成される。好ましくは、前記分離面は、前記固体物の外面及び好ましくは平らな表面から隔たって、並行して形成される。好ましくは、前記分離面は、好ましくは100μmより小さく、そして好ましくは50μmよりも小さく、そして特に好ましくは、20、10、5又は2μmよりも小さく若しくは正に20、10、5又は2μmだけ、前記固体物の平らな表面から離れている。したがって、前記分離面は、好ましくは、ディフェクトから生成された面形状で作られており、該ディフェクトは、好ましくは100μmより小さく、そして好ましくは50μmよりも小さく、そして特に好ましくは、20、10又は2μmよりも小さく若しくは正に20、10、5又は2μmだけ、前記固体物の平らな表面から離れている。
この発明の別の好ましい実施形態によれば、前記放射線源は、前記分離面を生成するために照射された光線が、前記固体物の中に、所定の深さに、特に100μmより深く、貫通するように構成される。好ましくは、前記分離面は、前記固体物の外面及び好ましくは平らな表面から隔たって、並行して形成される。好ましくは、前記分離面は、好ましくは100μmより大きく、そして好ましくは200μmよりも大きく、そして特に好ましくは、400又は700μmよりも大きく、前記固体物の平らな表面から離れている。したがって、前記分離面は、好ましくは、ディフェクトから生成された面形状で作られており、該ディフェクトは、好ましくは100μmより大きく、そして好ましくは200μmよりも大きく、そして特に好ましくは400又は700μmよりも大きく、前記固体物の平らな表面から離れている。
Claims (11)
- 固形材料の層を製造するための方法であって、
固形材料(4)の少なくとも1つの層を分離するための固体物(2)を提供することであって、前記固体物(2)は、第1の面(14)及び第2の面(16)を持ち、該第1の面(14)は、実質的に又は正確に該第2の面(16)に対して平行に配置され、前記固体物は、炭化ケイ素からなることと、
固形材料の層が前記固体物から分離される分離面を決定するために、少なくとも1つのレーザーのレーザービームによって前記固体物の内部構造内にディフェクトを生成することであって、前記レーザービームが前記第2の面(16)を経由して前記固体物(2)内に貫通し、前記レーザービームのエネルギーは、前記固体物内の損傷の伝播がレイリー長の3倍よりも小さくなるように選択されることと、ここで、前記分離面は、異なるディフェクト集中からなる複数の領域によって形成され、
前記固体物(2)上に前記固形材料(4)の層を保持するための受容層(10)を設けることであって、前記受容層(10)は、前記第2の面(16)上に配置され、且つ、該受容層(10)はポリマー層により形成されるものと、
前記固体物(2)内にストレスを機械的に発生するために、前記受容層(10)に対して熱を適用することであって、前記熱を適用することは、気温より低い温度で前記受容層を冷却することからなり、前記冷却は、前記ポリマー層の少なくとも一部がガラス転移を受けるように行われ、前記ストレスにより前記分離面(8)に沿って前記固体物(2)内にクラックが伝播し、該クラックが前記固体物(2)から前記固形材料(4)の層を分離するものと、
を少なくとも含む方法。 - 前記固体物(2)に導入される前記レーザービームを提供するための前記少なくとも1つのレーザーの放射線源(18)は、照射された前記レーザービームが前記固体物(2)内の所定の位置に前記ディフェクトを生成するように構成されることを特徴とする、
請求項1に記載の方法。 - 前記放射線源(18)は、前記分離面(8)を生成するために照射された前記レーザービームが、200μm未満の規定の深さに、前記固体物(2)内を貫通するように、構成されることを特徴とする、
請求項2に記載の方法。 - 前記放射線源(18)は、前記分離面(8)を生成するために照射された前記レーザービームが、100μmより大きい規定の深さに、前記固体物(2)内を貫通するように、構成されることを特徴とする、
請求項2に記載の方法。 - 前記固体物(2)は、該固体物(2)を保持するための保持層(12)に配置され、前記保持層(12)は、該固体物(2)の第1の面(14)に配置され、前記固体物(2)の第1の面(14)は、前記固体物(2)の第2の面(16)から隔離されており、且つ、前記分離面(8)は、前記第1の面(14)及び/又は前記第2の面(16)に対して平行に並べられることを特徴とする、
請求項1乃至4の何れかに記載の方法。 - 前記受容層は、ポリマー層(10)で形成され、前記ポリマー層及び/又は前記保持層(12)は、少なくとも部分的にPDMSで形成され、前記保持層(12)は、少なくとも部分的に少なくとも1つの金属からなる安定化装置の少なくとも部分的に平らな面に配置されることを特徴とする、
請求項5に記載の方法。 - 前記固体物(2)内の前記ストレスは、前記クラックの開始及び/又は前記クラックの伝播がクラック面に製造された表面の所定のトポグラフィを生成するように制御され得るように設定されることを特徴とする、
請求項1乃至6の何れかに記載の方法。 - 前記レーザーは、フェムト秒レーザーであることを特徴とする、
請求項1乃至7の何れかに記載の方法。 - 前記レーザーは、10psより小さいパルス幅を持つことを特徴とする、
請求項1乃至8の何れかに記載の方法。 - 前記レーザービームの波長は、前記固体物の吸収が10cm-1より小さくなるように選択されることを特徴とする、
請求項1乃至9の何れかに記載の方法。 - 個々の前記ディフェクトは、それぞれフェムト秒レーザーにより引き起こされた多光子励起に由来するものであることを特徴とする、
請求項1乃至10の何れかに記載の方法。
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Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014013107A1 (de) * | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
DE102015000449A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Festkörperteilung mittels Stoffumwandlung |
DE102014014422A1 (de) | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
DE102014014420A1 (de) | 2014-09-29 | 2016-04-14 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht |
DE102015103118A1 (de) | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
EP3223994B1 (de) | 2014-11-27 | 2023-04-26 | Siltectra GmbH | Laserbasiertes trennverfahren |
CN108838562B (zh) | 2014-11-27 | 2021-08-17 | 西尔特克特拉有限责任公司 | 借助于材料转化的固体分开 |
DE102015003369A1 (de) | 2015-03-16 | 2016-09-22 | Siltectra Gmbh | Transparenter und hochstabiler Displayschutz |
CN107206544A (zh) | 2015-01-28 | 2017-09-26 | 西尔特克特拉有限责任公司 | 透明的并且高度稳定的显示屏保护件 |
DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
CN105436710B (zh) | 2015-12-30 | 2019-03-05 | 大族激光科技产业集团股份有限公司 | 一种硅晶圆的激光剥离方法 |
DE102016000051A1 (de) * | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
WO2017162800A1 (de) * | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-hybrid-material zur verwendung in einem splitting-verfahren |
EP3551373A1 (de) * | 2016-12-12 | 2019-10-16 | Siltectra GmbH | Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten |
DE102017010284A1 (de) | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
JP6858586B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
DE102017007585A1 (de) * | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Vorrichtung und Verfahren zum Beaufschlagen von Spannungserzeugungsschichten mit Druck zum verbesserten Führen eines Abtrennrisses |
KR20220153127A (ko) * | 2017-04-20 | 2022-11-17 | 실텍트라 게엠베하 | 구성 요소가 제공된 고상 층의 두께를 감소시키는 방법 |
DE102018003675A1 (de) | 2018-05-04 | 2019-11-07 | Siltectra Gmbh | Verfahren zum Abtrennen von Festkörperschichten von Kompositstrukturen aus SiC und einer metallischen Beschichtung oder elektrischen Bauteilen |
US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
JPWO2021025086A1 (ja) | 2019-08-06 | 2021-02-11 | ||
EP4036285A4 (en) | 2019-09-27 | 2023-10-25 | Kwansei Gakuin Educational Foundation | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES |
US20220375749A1 (en) | 2019-09-27 | 2022-11-24 | Kwansei Gakuin Educational Foundation | Method of manufacturing sic semiconductor device and sic semiconductor device |
CN111545922B (zh) * | 2020-04-08 | 2022-07-12 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体的加工方法 |
WO2022096064A1 (de) * | 2020-11-05 | 2022-05-12 | centrotherm international AG | Verfahren und system zum herstellen eines substrats |
CN114311343A (zh) * | 2021-11-30 | 2022-04-12 | 盐城天合国能光伏科技有限公司 | 一种新型的电池片切割装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
US6392683B1 (en) | 1997-09-26 | 2002-05-21 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
US6248649B1 (en) * | 1998-06-23 | 2001-06-19 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films using patterned implants |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
US6886008B2 (en) * | 2001-03-08 | 2005-04-26 | Technion Research & Development Foundation Ltd. | Machine learning by construction of a decision function |
EP3252806B1 (en) | 2002-03-12 | 2019-10-09 | Hamamatsu Photonics K.K. | Substrate dividing method |
KR100749972B1 (ko) | 2002-03-12 | 2007-08-16 | 하마마츠 포토닉스 가부시키가이샤 | 가공 대상물 절단 방법 |
US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
JP4601965B2 (ja) | 2004-01-09 | 2010-12-22 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
US20050181210A1 (en) | 2004-02-13 | 2005-08-18 | Doering Patrick J. | Diamond structure separation |
JP2006245498A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 基板の製造方法およびその装置 |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
WO2007087354A2 (en) * | 2006-01-24 | 2007-08-02 | Baer Stephen C | Cleaving wafers from silicon crystals |
JP5117692B2 (ja) | 2006-07-14 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
EP2218098B1 (en) | 2007-11-02 | 2018-08-15 | President and Fellows of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
US8138448B2 (en) | 2007-12-31 | 2012-03-20 | International Business Machines Corporation | Negative coefficient thermal expansion engineered particles for composite fabrication |
JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
KR101527627B1 (ko) | 2008-12-23 | 2015-06-10 | 실텍트라 게엠베하 | 구조화 표면을 갖는 고상 재료의 얇은 자립층을 제조하는 방법 |
JP5398332B2 (ja) * | 2009-04-16 | 2014-01-29 | 信越ポリマー株式会社 | 半導体ウェーハの製造方法及びその装置 |
JP4979732B2 (ja) | 2009-05-01 | 2012-07-18 | 信越化学工業株式会社 | 貼り合わせウェーハの製造方法 |
CN101996943B (zh) | 2009-08-18 | 2013-12-04 | 展晶科技(深圳)有限公司 | 材料层分离方法 |
DE102010030358B4 (de) | 2010-06-22 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Abtrennen einer Substratscheibe |
JP5950269B2 (ja) * | 2011-02-10 | 2016-07-13 | 国立大学法人埼玉大学 | 基板加工方法及び基板 |
EP2562181A1 (en) | 2011-08-25 | 2013-02-27 | Universität Leipzig | Potent ligands of the ghrelin receptor |
WO2013126927A2 (en) * | 2012-02-26 | 2013-08-29 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
DE102014013107A1 (de) * | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
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