WO2018210484A1 - Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen - Google Patents

Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen Download PDF

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Publication number
WO2018210484A1
WO2018210484A1 PCT/EP2018/058882 EP2018058882W WO2018210484A1 WO 2018210484 A1 WO2018210484 A1 WO 2018210484A1 EP 2018058882 W EP2018058882 W EP 2018058882W WO 2018210484 A1 WO2018210484 A1 WO 2018210484A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
etching
laser
ratio
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/058882
Other languages
German (de)
English (en)
French (fr)
Inventor
Roman Ostholt
Norbert AMBROSIUS
Daniel DUNKER
Arne Schnoor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPKF Laser and Electronics AG
Original Assignee
LPKF Laser and Electronics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LPKF Laser and Electronics AG filed Critical LPKF Laser and Electronics AG
Priority to CN201880025435.8A priority Critical patent/CN110545948B/zh
Priority to KR1020197031695A priority patent/KR102260931B1/ko
Priority to EP18717553.4A priority patent/EP3624982A1/de
Priority to JP2019558349A priority patent/JP7396899B2/ja
Priority to US16/613,444 priority patent/US11065716B2/en
Publication of WO2018210484A1 publication Critical patent/WO2018210484A1/de
Anticipated expiration legal-status Critical
Priority to JP2022084208A priority patent/JP7538175B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass

Definitions

  • the invention relates to a method for processing, in particular for separating a particular planar substrate by means of laser-induced depth etching, wherein pulsed laser radiation is directed with a spatial laser pulse distance to the substrate and subsequently an anisotropic material removal by etching with an etch rate and an etching time is performed
  • LIDE Laser Induced Deep Etching
  • a transparent material is conveyed over an elongated region along the beam axis, often across the entire thickness, by means of a laser pulse or pulse train
  • the transparent material e.g. in glass plates, modified so that the modification is anisotropically etched in a subsequent wet-chemical etching bath. If the laser pulses are emitted onto the material at a suitable spatial distance along a contour, the material is separated along the contour during the anisotropic removal of material.
  • the laser energy input serves to excite or trigger a reaction and a modification by conversion, the effect of which leads or is used only in the subsequent process step to the desired material separation.
  • a subsequent anisotropic Materialabtrages done by an etching process no sequential, but a two-dimensional erosion process is used for the separation process, which only makes very low demands on the process. In particular, can be about the
  • the separation surface is formed, the interface is not flat. Rather, a corrugation or a perforation, similar to a connected perforation.
  • This basically unwanted uneven parting surface can be defined by the
  • the two fundamental objectives of a rapid processing progress by large laser pulse intervals on the one hand and a smooth as possible, a planar course approximated course of the cut surface on the other hand contrary.
  • the invention has for its object to provide a way to meet these two objectives in an optimal manner or to agree. This object is achieved by a method according to the features of claim 1.
  • the further embodiment of the invention can be found in the dependent claims.
  • machining parameters are determined according to the following rule:
  • the roughness of the surface as a function of the pulse spacing typically has a local minimum of approximately 1 ⁇ to 3 ⁇ .
  • Minimums depends on the substrate material, the etching chemistry used and other process parameters.
  • an anisotropic material removal in the etching bath is made possible at the locations which have been modified by the laser radiation.
  • structures with large aspect ratios can be produced with the condition
  • the removal of material by the wet-chemical etching described by the product of etch rate R and etching time t, compared to the thickness D of the substrate is low.
  • the substrate material used is preferably glass which is transparent to the wavelength used for the laser-induced deep etching. Particularly high aspect ratios and low roughness can be achieved with quartz glass.
  • the invention allows for various embodiments. To further clarify its basic principle, one of them is shown in the drawing and will be described below. This shows in each case in a schematic representation in
  • Fig. 3 is an illustration of a surface profile of a cut surface in a
  • Fig. 4 shows the ratio of the laser pulse distance (d) and the roughness R a at different material abrasions.
  • Figure 1 shows schematically how different ripples or roughnesses of
  • Pulse distance d and the greater the etching time t is selected.
  • FIG. 4 shows the dependence of the roughness R a (roughness) on the laser pulse distance d (pitch) for different material removal (etch removal).
  • a laser pulse distance d of about 2 to 3 ⁇ a local minimum roughness R a of about 0.05 to 0.08 ⁇ is achieved. This is only slightly influenced by material removal, the product of etch rate and etching time.

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
PCT/EP2018/058882 2017-05-15 2018-04-06 Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen Ceased WO2018210484A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201880025435.8A CN110545948B (zh) 2017-05-15 2018-04-06 借助激光诱导的深度蚀刻来加工、尤其分割基板的方法
KR1020197031695A KR102260931B1 (ko) 2017-05-15 2018-04-06 레이저 유도 디프 반응성 에칭을 이용해 기판을 가공하기 위한, 특히 분리하기 위한 방법
EP18717553.4A EP3624982A1 (de) 2017-05-15 2018-04-06 Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen
JP2019558349A JP7396899B2 (ja) 2017-05-15 2018-04-06 パルスレーザ光を用いた基板の加工、特に分離のための方法
US16/613,444 US11065716B2 (en) 2017-05-15 2018-04-06 Method for processing, in particular separating, a substrate by means of laser-induced deep reactive etching
JP2022084208A JP7538175B2 (ja) 2017-05-15 2022-05-24 パルスレーザ光を用いた基板の加工、特に分離のための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017110542.5 2017-05-15
DE102017110542 2017-05-15

Publications (1)

Publication Number Publication Date
WO2018210484A1 true WO2018210484A1 (de) 2018-11-22

Family

ID=61972103

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/058882 Ceased WO2018210484A1 (de) 2017-05-15 2018-04-06 Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen

Country Status (6)

Country Link
US (1) US11065716B2 (enExample)
EP (1) EP3624982A1 (enExample)
JP (2) JP7396899B2 (enExample)
KR (1) KR102260931B1 (enExample)
CN (1) CN110545948B (enExample)
WO (1) WO2018210484A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021239302A1 (de) * 2020-05-27 2021-12-02 Lpkf Laser & Electronics Ag Verfahren zum einbringen einer ausnehmung in ein substrat
JP2023544669A (ja) * 2021-08-30 2023-10-25 アブソリックス インコーポレイテッド パッケージング基板、半導体パッケージ、パッケージング基板の製造方法、及び半導体パッケージの製造方法

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RU2756175C1 (ru) * 2020-03-30 2021-09-28 Акционерное Общество "Государственный Научный Центр Российской Федерации Троицкий Институт Инновационных И Термоядерных Исследований" Роботизированный лазерный комплекс и способ демонтажа металлоконструкций аэс

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WO2016004144A1 (en) 2014-07-02 2016-01-07 Praxair Technology, Inc. Argon condensation system and method
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WO2021239302A1 (de) * 2020-05-27 2021-12-02 Lpkf Laser & Electronics Ag Verfahren zum einbringen einer ausnehmung in ein substrat
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Also Published As

Publication number Publication date
JP7396899B2 (ja) 2023-12-12
JP2020517570A (ja) 2020-06-18
CN110545948B (zh) 2022-02-25
KR20190132461A (ko) 2019-11-27
US11065716B2 (en) 2021-07-20
JP7538175B2 (ja) 2024-08-21
EP3624982A1 (de) 2020-03-25
JP2022116133A (ja) 2022-08-09
US20200180068A1 (en) 2020-06-11
KR102260931B1 (ko) 2021-06-04
CN110545948A (zh) 2019-12-06

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