JP2020196659A - 誘電体磁器組成物及びこれを含む積層セラミック電子部品 - Google Patents
誘電体磁器組成物及びこれを含む積層セラミック電子部品 Download PDFInfo
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- JP2020196659A JP2020196659A JP2019171293A JP2019171293A JP2020196659A JP 2020196659 A JP2020196659 A JP 2020196659A JP 2019171293 A JP2019171293 A JP 2019171293A JP 2019171293 A JP2019171293 A JP 2019171293A JP 2020196659 A JP2020196659 A JP 2020196659A
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- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 35
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 11
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 39
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 18
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 14
- 229910052788 barium Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 7
- 229910052691 Erbium Inorganic materials 0.000 claims description 7
- 229910052689 Holmium Inorganic materials 0.000 claims description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 229910052772 Samarium Inorganic materials 0.000 claims description 7
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- 229910052775 Thulium Inorganic materials 0.000 claims description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims 6
- 230000005684 electric field Effects 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明の一実施形態による誘電体磁器組成物は、チタン酸バリウム系母材主成分を含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、第1副成分として、Mn、V、Cr、Fe、Ni、Co、Cu、及びZnのうち一つ以上を含む原子価可変アクセプタ(variable−valence acceptor)元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、第2副成分として、Mgを含む原子価固定アクセプタ(fixed−valence acceptor)元素、これらの酸化物、及びこれらの炭酸塩のうちいずれかを含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Gd、及びYbのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第3副成分を含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、Ba及びCaのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第4副成分を含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、Si元素の酸化物、Si元素の炭酸塩、及びSi元素を含むガラスからなる群より選択される一つ以上を含む第5副成分を含むことができる。
本発明の一実施形態によると、上記誘電体磁器組成物は、Na及びLiの一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第6副成分を含むことができる。
[実験例]
12 第1結晶粒
20 ドメイン境界
110 セラミック本体
111 誘電体層
121、122 第1及び第2内部電極
131、132 第1及び第2外部電極
Claims (11)
- チタン酸バリウム系母材主成分及び副成分を含み、
焼結後の微細構造が、
ドメイン境界を3個以下含む第1結晶粒と、ドメイン境界を4個以上含む第2結晶粒と、を含み、
全結晶粒に対する前記第2結晶粒の面積割合が20%以下である、誘電体磁器組成物。 - 前記チタン酸バリウム系母材主成分はABO3(Aは、Ba、Sr、及びCaのうち少なくとも一つであり、Bは、Ti及びZrのうち少なくとも一つである)で示される母材主成分を含む、請求項1に記載の誘電体磁器組成物。
- 前記副成分は、
Mn、V、Cr、Fe、Ni、Co、Cu、及びZnのうち一つ以上を含む原子価可変アクセプタ元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第1副成分と、
Mgを含む原子価固定アクセプタ元素、これらの酸化物、及びこれらの炭酸塩のうち一つ以上を含む第2副成分と、
Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Gd、及びYbのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第3副成分と、
Ba及びCaのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第4副成分と、
Si元素の酸化物、Si元素の炭酸塩、及びSi元素を含むガラスからなる群より選択される一つ以上を含む第5副成分と、
Na及びLiのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第6副成分と、のうち少なくとも一つ以上を含む、請求項1または2に記載の誘電体磁器組成物。 - 前記第3副成分は、母材主成分に対して0.3〜5.4mol%の範囲で含まれる、請求項3に記載の誘電体磁器組成物。
- 前記第4副成分は、母材主成分に対して5mol%以下の範囲で含まれる、請求項3または4に記載の誘電体磁器組成物。
- 前記第5副成分は、母材主成分に対して0.5〜5mol%の範囲で含まれる、請求項3から5のいずれか一項に記載の誘電体磁器組成物。
- 母材主成分に対して、
前記第1副成分は0.1〜1.0mol%の範囲で含まれ、
前記第2副成分は2mol%以下の範囲で含まれ、
前記第6副成分は1mol%以下の範囲で含まれる、請求項3から6のいずれか一項に記載の誘電体磁器組成物。 - 前記副成分は、
Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Gd、及びYbのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第3副成分と、
Ba及びCaのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第4副成分と、
Si元素の酸化物、Si元素の炭酸塩、及びSi元素を含むガラスからなる群より選択される一つ以上を含む第5副成分と、を含み、
X軸を第5副成分の含有量、Y軸を第3副成分と第4副成分の合計含有量とするとき、第3、第4、及び第5副成分の含有量の関係が点A(0.5,1.9)、B(0.5,3.1)、C(5,5.4)、D(5,3.275)を連結する四角形の境界及びその内部に属する、請求項1から7のいずれか一項に記載の誘電体磁器組成物。 - 誘電体層及び内部電極を含むセラミック本体と、
前記セラミック本体の外部面に形成され、前記内部電極と電気的に連結される外部電極と、を含み、
前記誘電体層の微細構造は、ドメイン境界を3個以下含む第1結晶粒と、ドメイン境界を4個以上含む第2結晶粒と、を含み、
全結晶粒に対する前記第2結晶粒の面積割合が20%以下である、積層セラミック電子部品。 - 前記誘電体層は、チタン酸バリウム系母材主成分と、
Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Gd、及びYbのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第3副成分と、
Ba及びCaのうち一つ以上の元素、これらの酸化物、及びこれらの炭酸塩からなる群より選択される一つ以上を含む第4副成分と、
Si元素の酸化物、Si元素の炭酸塩、及びSi元素を含むガラスからなる群より選択される一つ以上を含む第5副成分と、を含み、
X軸を第5副成分の含有量、Y軸を第3副成分と第4副成分の合計含有量とするとき、第3、第4、及び第5副成分の含有量の関係が点A(0.5,1.9)、B(0.5,3.1)、C(5,5.4)、D(5,3.275)を連結する四角形の境界及びその内部に属する、請求項9に記載の積層セラミック電子部品。 - 前記内部電極は、前記誘電体層を間に挟んで互いに対向するように配置される第1内部電極及び第2内部電極を含む、請求項9または10に記載の積層セラミック電子部品。
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