JP2020156096A - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP2020156096A JP2020156096A JP2020100162A JP2020100162A JP2020156096A JP 2020156096 A JP2020156096 A JP 2020156096A JP 2020100162 A JP2020100162 A JP 2020100162A JP 2020100162 A JP2020100162 A JP 2020100162A JP 2020156096 A JP2020156096 A JP 2020156096A
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Classifications
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Abstract
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様の撮像装置の構成例などについて説明する。
本発明の一態様に係る撮像装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図19に示す。
[実施例]
Claims (4)
- 複数の画素ブロックと、第1の回路と、を有する撮像装置であって、
前記複数の画像ブロックは、複数の画素と、第2の回路と、を有し、
前記複数の画素と前記第2の回路とは第1の配線を介して電気的に接続され、
前記複数の画素は、それぞれ光電変換による第1の信号を出力する機能を有し、
前記第2の回路は、前記第1の配線に出力されている前記第1の信号の和に基づいて第2の信号を生成し、前記第2の信号を前記第1の回路に出力する機能を有し、
前記第1の回路は、前記第2の信号を2値化して第3の信号を生成する撮像装置。 - 複数の回路ブロックと、第1の回路と、を有する撮像装置であって、
前記複数の回路ブロックは、複数の画素と、第2の回路と、を有し、
前記複数の画素と前記第2の回路とは第1の配線を介して電気的に接続され、
前記複数の画素は、それぞれ前記第1の配線に第1のデータ及び第2のデータを出力する機能を有し、
前記第2の回路は、前記第1のデータの和および前記第2のデータの和の差分を抽出して第3のデータを生成する機能を有し、
前記第1の回路は、前記第3のデータを2値化して第4のデータを生成する撮像装置。 - 請求項2において、
前記第1のデータは、光電変換で取得したデータに重み係数を乗じた信号であり、前記第2のデータは、前記光電変換で取得したデータである撮像装置。 - 請求項1乃至請求項3のいずれか一において、
前記複数の画素は、光電変換で取得したデータを出力する第1の画素と、リセット電位を出力する第2の画素を有する撮像装置。
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DE112018002719T5 (de) * | 2017-05-26 | 2020-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Abbildungsvorrichtung und elektronisches Gerät |
CN111344665B (zh) | 2017-11-17 | 2024-04-26 | 株式会社半导体能源研究所 | 加法运算方法、半导体装置及电子设备 |
DE112019005195T5 (de) * | 2018-10-19 | 2021-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
KR20220003568A (ko) | 2019-04-29 | 2022-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 그 동작 방법, 및 전자 기기 |
WO2020250095A1 (ja) * | 2019-06-14 | 2020-12-17 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
WO2021014258A1 (ja) * | 2019-07-19 | 2021-01-28 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
TW202105987A (zh) * | 2019-07-26 | 2021-02-01 | 日商半導體能源研究所股份有限公司 | 攝像裝置及其工作方法及電子裝置 |
US11849234B2 (en) | 2019-08-09 | 2023-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device or imaging system |
US20220359592A1 (en) * | 2019-08-22 | 2022-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
WO2021053449A1 (ja) * | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 撮像システムおよび電子機器 |
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DE102021114313A1 (de) | 2021-06-02 | 2022-12-08 | Universität Siegen, Körperschaft des öffentlichen Rechts | Zählen von Pulsen eines elektrischen Signals |
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