JP2020155467A - 基板処理装置、および、基板処理方法 - Google Patents

基板処理装置、および、基板処理方法 Download PDF

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Publication number
JP2020155467A
JP2020155467A JP2019049944A JP2019049944A JP2020155467A JP 2020155467 A JP2020155467 A JP 2020155467A JP 2019049944 A JP2019049944 A JP 2019049944A JP 2019049944 A JP2019049944 A JP 2019049944A JP 2020155467 A JP2020155467 A JP 2020155467A
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JP
Japan
Prior art keywords
substrate
film thickness
film
arm
liquid
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Pending
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JP2019049944A
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English (en)
Japanese (ja)
Inventor
大輝 日野出
Daiki Hinode
大輝 日野出
喬 太田
Takashi Ota
喬 太田
博司 堀口
Hiroshi Horiguchi
博司 堀口
隼 澤島
Hayato Sawashima
隼 澤島
英司 深津
Eiji Fukatsu
英司 深津
橋本 光治
Mitsuharu Hashimoto
光治 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2019049944A priority Critical patent/JP2020155467A/ja
Priority to TW108147037A priority patent/TWI745806B/zh
Priority to PCT/JP2020/001265 priority patent/WO2020188980A1/ja
Publication of JP2020155467A publication Critical patent/JP2020155467A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2019049944A 2019-03-18 2019-03-18 基板処理装置、および、基板処理方法 Pending JP2020155467A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019049944A JP2020155467A (ja) 2019-03-18 2019-03-18 基板処理装置、および、基板処理方法
TW108147037A TWI745806B (zh) 2019-03-18 2019-12-20 基板處理裝置以及基板處理方法
PCT/JP2020/001265 WO2020188980A1 (ja) 2019-03-18 2020-01-16 基板処理装置、および、基板処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019049944A JP2020155467A (ja) 2019-03-18 2019-03-18 基板処理装置、および、基板処理方法

Publications (1)

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JP2020155467A true JP2020155467A (ja) 2020-09-24

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JP2019049944A Pending JP2020155467A (ja) 2019-03-18 2019-03-18 基板処理装置、および、基板処理方法

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JP (1) JP2020155467A (zh)
TW (1) TWI745806B (zh)
WO (1) WO2020188980A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022201953A1 (ja) * 2021-03-23 2022-09-29 株式会社Screenホールディングス 基板処理装置、基板処理システムおよび基板処理方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102565731B1 (ko) * 2020-11-16 2023-08-17 (주)에스티아이 포드 세정챔버
JP2022125560A (ja) * 2021-02-17 2022-08-29 東京エレクトロン株式会社 膜厚測定装置、成膜システム及び膜厚測定方法
CN115890456A (zh) * 2022-12-29 2023-04-04 西安奕斯伟材料科技有限公司 抛光液提供装置、抛光设备和抛光方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873804A (ja) * 1981-10-28 1983-05-04 Hitachi Ltd シリコンウエハエツチング部厚さ測定方法及び装置
JP2002323303A (ja) * 2001-04-26 2002-11-08 Denso Corp 膜厚測定方法、測定装置及び半導体装置の製造方法
JP2012004294A (ja) * 2010-06-16 2012-01-05 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP2015088619A (ja) * 2013-10-30 2015-05-07 株式会社Screenホールディングス 犠牲膜除去方法および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873804A (ja) * 1981-10-28 1983-05-04 Hitachi Ltd シリコンウエハエツチング部厚さ測定方法及び装置
JP2002323303A (ja) * 2001-04-26 2002-11-08 Denso Corp 膜厚測定方法、測定装置及び半導体装置の製造方法
JP2012004294A (ja) * 2010-06-16 2012-01-05 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP2015088619A (ja) * 2013-10-30 2015-05-07 株式会社Screenホールディングス 犠牲膜除去方法および基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022201953A1 (ja) * 2021-03-23 2022-09-29 株式会社Screenホールディングス 基板処理装置、基板処理システムおよび基板処理方法
TWI796175B (zh) * 2021-03-23 2023-03-11 日商斯庫林集團股份有限公司 基板處理裝置、基板處理系統以及基板處理方法

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Publication number Publication date
TW202036699A (zh) 2020-10-01
TWI745806B (zh) 2021-11-11
WO2020188980A1 (ja) 2020-09-24

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