JP2020155467A - Substrate processing device and substrate processing method - Google Patents

Abstract

To improve flexibility of a measurement position of measurement of a film thickness.SOLUTION: A substrate processing device includes: a substrate holding part for holding a substrate in which a measurement object film is formed on an upper surface; a first arm to which a film thickness measurement instrument for measuring a film thickness of the measurement object film is attached and which may rotate on a surface along the upper surface of the substrate; and a second arm to which a first discharge nozzle for discharging a process liquid for processing the substrate is attached and which may rotate on the surface along the upper surface of the substrate. A first distance, being a distance between the first arm and the upper surface of the substrate holding part, is longer than a second distance, being a distance between the second arm and the upper surface of the substrate holding part.SELECTED DRAWING: Figure 2

Description

The techniques disclosed in the present specification relate to a substrate processing apparatus and a substrate processing method. The substrate to be processed includes, for example, a semiconductor substrate, a liquid crystal display device, a flat panel display (FPD) substrate such as an organic EL (electrulosensence) display device, an optical disk substrate, a magnetic disk substrate, and a photomagnetic disk. Included are substrates, photomask substrates, ceramic substrates, printed circuit boards, solar cell substrates, and the like.

Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as "substrate"), various treatments have been performed on the substrate by using a substrate processing apparatus. The treatment includes an etching treatment for removing the film formed on the upper surface of the substrate with a treatment liquid.

Then, in order to confirm the effect of the treatment on the film, the film thickness of the film is measured (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2002-252273

The above film thickness measurement was performed using, for example, a film thickness measuring device fixed to a point above the substrate. Therefore, the measurement points where the film thickness can be measured are limited, and it may be difficult to measure the film thickness at a desired point.

The technique disclosed in the present specification has been made in view of the above-mentioned problems, and an object thereof is to provide a technique for increasing the degree of freedom of the measurement point of the above-mentioned film thickness measurement. Is.

The first aspect of the technique disclosed in the present specification is a substrate holding portion for holding a substrate having a measurement target film formed on its upper surface, and a film thickness measurement for measuring the thickness of the measurement target film. A first arm to which a device is attached and which can rotate on a surface along the upper surface of the substrate and a first ejection nozzle for ejecting a processing liquid for processing the substrate are attached and A second arm that is rotatable on a surface along the upper surface of the substrate is provided, and the first distance, which is the distance between the first arm and the upper surface of the substrate holding portion, is the second arm. It is longer than the second distance, which is the distance between the substrate holding portion and the upper surface of the substrate holding portion.

A second aspect of the technique disclosed herein relates to a first aspect, at least the operation of the film thickness measuring instrument, the first arm, the first ejection nozzle and the second arm. The control unit further includes a control unit for measuring the film thickness of the film to be measured by the film thickness measuring device in the first arm, and the control unit using the first discharge nozzle in the second arm. The treatment liquid is discharged in parallel.

A third aspect of the technique disclosed in the present specification relates to the second aspect, and is a second aspect of discharging a film removing liquid for removing the removal target film formed on the upper surface of the measurement target film. Further including a discharge nozzle, the control unit also controls the operation of the second discharge nozzle, and the control unit removes the film to be removed by discharging the film removing liquid from the second discharge nozzle. After that, the film thickness measuring device is made to measure the film thickness of the measurement target film from which the removal target film has been removed.

The fourth aspect of the technique disclosed in the present specification relates to the second or third aspect, and the control unit is based on the result of film thickness measurement of the film to be measured by the film thickness measuring device. The time for the first discharge nozzle to discharge the processing liquid is adjusted.

A fifth aspect of the technique disclosed in the present specification relates to any one of the first to fourth aspects, wherein the film thickness measuring device is an optical displacement sensor, and the film thickness measurement is performed. At least a part of the measurement irradiation wavelength range of the device is outside the absorption wavelength range of the treatment liquid.

A sixth aspect of the technique disclosed in the present specification relates to the fifth aspect, in which the entire range of measurement irradiation wavelengths of the film thickness measuring instrument is outside the range of absorption wavelengths of the treatment liquid.

A seventh aspect of the technique disclosed in the present specification is a substrate holding portion for holding a substrate on which a measurement target film having a predetermined thickness is formed on the upper surface, and a film thickness of the measurement target film. A first arm to which a film thickness measuring device for measuring is attached and rotatable on a surface along the upper surface of the substrate, and a first discharge for discharging a processing liquid for processing the substrate. A second arm to which a nozzle is attached and rotatable on a surface along the upper surface of the substrate and a control unit that controls at least the film thickness measuring device are provided, and the control unit is the film thickness measuring device. Based on the result of measuring the film thickness of the film to be measured on the upper surface of the substrate, the film thickness measuring device is calibrated.

The eighth aspect of the technique disclosed in the present specification is a substrate holding portion for holding a substrate having a film to be measured formed on the upper surface, and a film thickness measurement for measuring the film thickness of the film to be measured. A first arm to which a device is attached and which can rotate on a surface along the upper surface of the substrate, and a first ejection nozzle for ejecting a processing liquid for processing the substrate are attached and A substrate processing method using a substrate processing apparatus including a second arm that can rotate on a surface along the upper surface of the substrate, and a step of measuring the film thickness of the film to be measured using the film thickness measuring device. A first distance, which is a distance between the first arm and the upper surface of the substrate holding portion, comprising a step of processing the substrate using the processing liquid discharged from the first ejection nozzle. Is longer than the second distance, which is the distance between the second arm and the upper surface of the substrate holding portion.

A ninth aspect of the technique disclosed in the present specification relates to an eighth aspect, which includes a step of measuring the film thickness of the film to be measured using the film thickness measuring device in the first arm. The step of processing the substrate using the processing liquid discharged from the first discharge nozzle in the second arm is performed in parallel.

The tenth aspect of the technique disclosed in the present specification relates to the eighth or ninth aspect, and is applied to the upper surface of the measurement target film before the film thickness measurement of the measurement target film by the film thickness measuring device. A step of discharging a film removing liquid for removing the formed film to be removed is further provided.

The eleventh aspect of the technique disclosed in the present specification relates to any one of the eighth to tenth aspects, and is based on the result of film thickness measurement of the film to be measured by the film thickness measuring device. Further, the step of adjusting the time for the first discharge nozzle to discharge the processing liquid is further provided.

A twelfth aspect of the technique disclosed in the present specification is a substrate holding portion for holding a substrate on which a measurement target film having a predetermined thickness is formed on an upper surface, and a film thickness of the measurement target film. A first arm to which a film thickness measuring device for measuring is attached and rotatable on a surface along the upper surface of the substrate, and a first discharge for discharging a processing liquid for processing the substrate. It is a substrate processing method using a substrate processing apparatus having a nozzle attached and a second arm that is rotatable on a surface along the upper surface of the substrate, and the film to be measured using the film thickness measuring device. Based on the step of measuring the film thickness, the step of treating the substrate with the treatment liquid discharged from the first ejection nozzle, and the result of measuring the film thickness of the film to be measured on the upper surface of the substrate. The step of calibrating the film thickness measuring device is provided.

According to aspects 1 to 12 of the techniques disclosed herein, a film thickness measuring instrument is attached and by providing a first arm that is rotatable along a surface along the top surface of the substrate. The degree of freedom of the measurement point of the thickness measurement can be increased.

Also, the objectives, features, aspects and advantages associated with the techniques disclosed herein will be further clarified by the detailed description and accompanying drawings set forth below.

It is a figure which shows typically the example of the structure of the substrate processing apparatus which concerns on embodiment. It is a figure which shows typically the example of the structure of the liquid processing unit in the substrate processing apparatus which concerns on embodiment. It is a top view which shows the example of the position of each arm in a liquid processing unit. It is a functional block diagram which shows an example of the connection relationship between each element of a substrate processing apparatus, and a control part. It is a sequence diagram which shows the example of the operation about the chemical solution treatment. It is a flowchart which shows the example of the operation about the chemical solution processing corresponding to FIG. It is a sequence diagram which shows the modification of the operation about the chemical solution treatment. FIG. 5 is a flowchart showing a modified example of the operation related to the chemical treatment according to FIG. 7. It is a sequence diagram which shows the modification of the operation about the chemical solution treatment. FIG. 5 is a flowchart showing a modified example of the operation related to the chemical treatment according to FIG. It is a sequence diagram which shows the example of the operation about cleaning of a processing room. It is a flowchart which shows the example of the operation about the processing room cleaning corresponding to FIG.

Hereinafter, embodiments will be described with reference to the attached drawings. In the following embodiments, detailed features and the like are also shown for the purpose of explaining the technique, but they are examples, and not all of them are necessarily essential features in order for the embodiments to be feasible.

It should be noted that the drawings are shown schematically, and for convenience of explanation, the configurations are omitted or the configurations are simplified in the drawings as appropriate. Further, the time width in the sequence diagram does not strictly indicate the actual time width. Further, the interrelationship between the sizes and positions of the configurations and the like shown in the different drawings is not always accurately described and can be changed as appropriate. Further, even in a drawing such as a plan view which is not a cross-sectional view, hatching may be added in order to facilitate understanding of the contents of the embodiment.

Further, in the description shown below, similar components are illustrated with the same reference numerals, and their names and functions are also the same. Therefore, detailed description of them may be omitted to avoid duplication.

Further, in the description described below, when it is described that a certain component is "equipped", "included", or "has", the existence of another component is excluded unless otherwise specified. Not an expression.

Also, even if ordinal numbers such as "first" or "second" are used in the description described below, these terms make it easy to understand the content of the embodiments. It is used for convenience, and is not limited to the order that can be generated by these ordinal numbers.

Also, in the description described below, expressions indicating relative or absolute positional relationships, for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", Unless otherwise specified, "concentric" or "coaxial" shall include cases where the positional relationship is strictly indicated, and cases where the angle or distance is displaced within the range where tolerance or similar function can be obtained. ..

Further, in the description described below, expressions indicating equality, for example, "same", "equal", "uniform" or "homogeneous", are strictly equal unless otherwise specified. It shall include the case where it indicates that there is, and the case where there is a difference within the range where tolerance or similar function can be obtained.

In addition, in the description described below, expressions such as "moving an object in a specific direction" are used when the object is moved in parallel with the specific direction and the object is not specified unless otherwise specified. Shall include the case of moving in the direction having the component in the specific direction.

Also, in the description described below, a specific position and direction such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back". Even if terms that mean are used, these terms are used for convenience to facilitate understanding of the content of the embodiments and have nothing to do with the direction in which they are actually implemented. It doesn't.

Further, in the description described below, when "the upper surface of ..." or "the lower surface of ..." is described, in addition to the upper surface of the target component itself, another surface of the target component may be used. It shall also include the state in which the components are formed. That is, for example, when it is described as "B provided on the upper surface of the instep", it does not prevent another component "Hei" from intervening between the instep and the second.

Further, in the description described below, expressions indicating a shape, for example, "square shape" or "cylindrical shape", are used to indicate that the shape is strictly the same, and tolerances or tolerances, unless otherwise specified. It shall include the case where unevenness or chamfering is formed within the range where the same function can be obtained.

<Embodiment>
Hereinafter, the substrate processing apparatus and the substrate processing method according to the present embodiment will be described.

<About the configuration of the board processing device>
FIG. 1 is a diagram schematically showing an example of a configuration of a substrate processing apparatus according to the present embodiment. From the viewpoint of making the configuration easier to understand, some components may be omitted or simplified in the drawings.

The substrate processing device 1 is a single-wafer processing device that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 performs various treatments such as cleaning treatment or etching treatment on the substrate W.

As an example is shown in FIG. 1, the substrate processing apparatus 1 includes an indexer section 2 and a processing section 3 in this order in the positive direction of the X-axis.

Further, the processing section 3 includes a transport module 3A and a processing module 3B in this order in the forward direction of the X-axis.

<Indexer section>
The indexer section 2 receives and processes the substrate container 21 capable of accommodating a plurality of substrates W in a laminated state, the stage 22 supporting the substrate container 21, and the unprocessed substrate W from the substrate container 21. It includes an indexer robot 23 that passes the substrate W that has been processed in section 3 to the substrate container 21.

The number of stages 22 is set to one in the example of FIG. 1 for the sake of simplicity, but a larger number may be arranged in the Y-axis direction.

The substrate container 21 may be a front opening unfixed pod (FOUP) for accommodating the substrate W in a sealed state, a standard mechanical interface (SMIF) pod, an open cassette (OC), or the like. ..

The indexer robot 23 includes, for example, a base portion 23A, an articulated arm 23B, and two hands 23C and hands 23D provided at intervals in the vertical direction from each other.

The base portion 23A is fixed to, for example, a frame that defines the outer shape of the indexer section 2 of the substrate processing apparatus 1.

The articulated arm 23B is configured by rotatably connecting a plurality of arm portions that can rotate along a horizontal plane, and the angle between the arm portions is set at the joint portion that is the joint portion of the arm portions. By changing, the arm portion is configured to be bendable and stretchable.

Further, the base end portion of the articulated arm 23B is rotatably coupled to the base portion 23A around a vertical axis. Further, the articulated arm 23B is movably coupled to the base portion 23A.

The hand 23C and the hand 23D are configured to be able to hold one substrate W, respectively.

The indexer robot 23 carries out one unprocessed substrate W from the substrate container 21 held on the stage 22 by using, for example, the hand 23C. Then, the indexer robot 23 passes the substrate W to the transfer mechanism 31 (described later) in the transfer module 3A from the negative direction of the X-axis.

Further, the indexer robot 23 receives one processed substrate W from the transport mechanism 31 by using, for example, the hand 23D. Then, the indexer robot 23 accommodates the substrate W in the substrate container 21 held on the stage 22.

<Processing section>
The transport module 3A in the processing section 3 includes a transport mechanism 31 capable of transporting one or a plurality of substrates W while holding them in a horizontal posture.

The transport mechanism 31 may, for example, move in a tubular transport path surrounded by partition walls (not shown here) formed along the XZ plane and the XY plane. Further, the transport mechanism 31 may be guided by a rail extending in the X-axis direction to reciprocate.

The transfer mechanism 31 conveys the substrate W between a position in the negative X-axis direction close to the indexer section 2 and a position in the positive X-axis direction close to the transfer robot 33 (described later).

The processing module 3B in the processing section 3 includes a dummy substrate container 32 that accommodates a plurality of dummy substrate DWs, a transfer robot 33 that conveys the substrate W or the dummy substrate DW, and an unprocessed substrate supplied from the transfer mechanism 31. W is provided with a plurality of liquid treatment units 34A, a liquid treatment unit 34B, and a liquid treatment unit 34C that perform a specified treatment.

Here, the dummy substrate DW is, for example, a substrate used for cleaning the inside of the liquid processing unit (processing chamber cleaning). The thickness of the substrate itself of the dummy substrate DW and the thickness of the film (for example, silicon film) formed on the upper surface of the substrate are known.

The dummy substrate container 32 is located, for example, above the processing module 3B. Further, in the dummy substrate container 32, a plurality of dummy substrate DWs are accommodated in a laminated state.

The transfer robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support column 33E to which these configurations are attached via a connector 33F and which extends in the vertical direction.

The horizontal drive unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal drive unit 33A includes a stage 133A, a horizontal slider 133B that reciprocates the upper surface of the stage 133A in the horizontal direction, and a horizontal motor 133C that moves the horizontal slider 133B.

A rail (not shown here) extending linearly is provided on the upper surface of the stage 133A, and the moving direction of the horizontal slider 133B is regulated by the rail. The movement of the horizontal slider 133B is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

A hand 33C and a hand 33D are provided at the tip of the horizontal slider 133B. When the horizontal slider 133B is moved along the rail by the horizontal motor 133C, the hand 33C and the hand 33D can move forward and backward in the horizontal direction. In other words, the horizontal drive unit 33A moves the hand 33C and the hand 33D in the direction of horizontally separating and approaching from the support column 33E.

The horizontal drive unit 33A includes a rotation motor 133D that rotates the stage 133A around the rotation axis Z1 along the vertical direction. The rotation motor 133D allows the hand 33C and the hand 33D to rotate around the rotation axis Z1 within a range that does not interfere with the support column 33E.

The vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a rail (not shown here) extending in the vertical direction provided on the support column 33E.

The vertical motor 133H reciprocates the vertical slider 133G in the vertical direction along the rail. The movement of the vertical slider 133G is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

The connector 33F connects the vertical slider 133G and the stage 133A, and supports the stage 133A from below. The vertical motor 133H moves the vertical slider 133G, so that the stage 133A moves in the vertical direction. As a result, the hand 33C and the hand 33D can move up and down in the vertical direction.

It is not essential that the horizontal drive unit 33A moves the hand 33C and the hand 33D in parallel with the horizontal direction, and the hand 33C and the hand 33D may be moved in the horizontal and vertical combined directions. That is, "moving in the horizontal direction" means moving in a direction having a horizontal component.

Similarly, it is not essential for the vertical drive unit 33B to move the hand 33C and the hand 33D in parallel with the vertical direction, and the hand 33C and the hand 33D may be moved in the vertical and horizontal combined directions. That is, "moving in the vertical direction" means moving in the direction having a component in the vertical direction.

The transfer robot 33 carries out one unprocessed substrate W held by the transfer mechanism 31 by using, for example, the hand 33C. Then, for example, the transfer robot 33 arranges the substrate W on the upper surface of the spin base 51A (described later) in the liquid processing unit 34A from the negative direction of the X-axis.

Further, the transfer robot 33 carries out one dummy substrate DW housed in the dummy substrate container 32 by using, for example, the hand 33C. Then, for example, the transfer robot 33 arranges the dummy substrate DW on the upper surface of the spin base 51A in the liquid processing unit 34A from the negative direction of the X axis.

Further, the transfer robot 33 receives one processed substrate W from the inside of the liquid treatment unit 34A, the liquid treatment unit 34B, or the liquid treatment unit 34C by using, for example, the hand 33D. Then, the transfer robot 33 passes the substrate W to the transfer mechanism 31.

Further, the transfer robot 33 receives the dummy substrate DW from the inside of the liquid treatment unit 34A, the liquid treatment unit 34B, or the liquid treatment unit 34C by using, for example, the hand 33D. Then, the transfer robot 33 accommodates the dummy substrate DW in the dummy substrate container 32.

The liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are stacked in this order in the positive direction of the Z axis to form the treatment tower TW.

In the example of FIG. 1, the number of liquid treatment units is set to 3 for the sake of simplicity, but the number may be larger than that.

Further, in FIG. 1, the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are shown to be located in the positive direction of the X axis of the transfer robot 33, but the liquid treatment unit 34A and the liquid treatment unit 34B The position where the liquid processing unit 34C is arranged is not limited to this case, and may be arranged in any of the X-axis positive direction, the Y-axis positive direction, and the Y-axis negative direction of the transfer robot 33, for example. ..

Further, the specified treatment performed on the substrate W in the liquid treatment unit 34A, the liquid treatment unit 34B and the liquid treatment unit 34C includes, for example, fluid treatment using a liquid (that is, a treatment liquid) or gas for treatment, ultraviolet rays, and the like. This includes various processes such as a process using electromagnetic waves or a physical cleaning process (for example, brush cleaning or spray nozzle cleaning).

FIG. 2 is a diagram schematically showing an example of the configuration of the liquid processing unit 34A in the substrate processing apparatus according to the present embodiment. The configurations of the liquid treatment unit 34B and the liquid treatment unit 34C are also the same as in the case where an example is shown in FIG.

As an example is shown in FIG. 2, the liquid processing unit 34A has a box-shaped processing chamber 50 having an internal space and a central portion of the substrate W while holding one substrate W in a horizontal posture in the processing chamber 50. A spin chuck 51 for rotating the substrate W around the vertical rotation axis Z2 passing through the substrate W and a tubular processing cup 511 surrounding the spin chuck 51 around the rotation axis Z2 of the substrate W are provided.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. The partition wall 50A is formed with an opening 50B for carrying in and out the substrate W into the processing chamber 50.

The opening 50B is opened and closed by the shutter 50C. The shutter 50C has a closed position (indicated by a two-dot chain line in FIG. 2) that covers the opening 50B and an open position (solid line in FIG. 2) that opens the opening 50B by a shutter elevating mechanism (not shown here). Can be raised and lowered with (indicated by).

When the substrate W is carried in and out, the transfer robot 33 accesses the hands 33C and 33D into the processing chamber 50 through the opening 50B. As a result, the untreated substrate W can be arranged on the upper surface of the spin chuck 51, or the treated substrate W can be removed from the spin chuck 51.

As an example shown in FIG. 2, the spin chuck 51 includes a disc-shaped spin base 51A that vacuum-sucks the lower surface of the substrate W in a horizontal posture, and a rotation shaft 51C that extends downward from the central portion of the spin base 51A. It includes a spin motor 51D that rotates the substrate W adsorbed on the spin base 51A by rotating the rotation shaft 51C.

The spin chuck 51 is not limited to the vacuum suction type chuck shown in FIG. 2, and includes, for example, a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the spin base. It may be a sandwiching type chuck that sandwiches the peripheral edge portion of the substrate W.

As an example shown in FIG. 2, the liquid treatment unit 34A has a chemical liquid nozzle 52 for discharging the chemical liquid toward the upper surface of the substrate W held by the spin chuck 51, and a chemical liquid nozzle 52 attached to the tip thereof. The chemical solution arm 152, the chemical solution tank 53 for storing the chemical solution supplied to the chemical solution nozzle 52, the chemical solution pipe 54 for guiding the chemical solution in the chemical solution tank 53 to the chemical solution nozzle 52, and the chemical solution pipe 54 for sending the chemical solution in the chemical solution tank 53 to the chemical solution pipe 54. A liquid feeding device 55 (for example, a pump) and a chemical liquid valve 56 that opens and closes the inside of the chemical liquid pipe 54 are provided.

The chemical solution arm 152 includes a rotation drive source 152A, a shaft body 152B, and an arm portion 152C having one end fixed to the upper end of the shaft body 152B and the chemical solution nozzle 52 attached to the other end.

In the chemical solution arm 152, the shaft body 152B is rotated by the rotation drive source 152A, so that the chemical solution nozzle 52 attached to the tip of the arm portion 152C is held on the upper surface of the substrate W or the dummy substrate DW held by the spin chuck 51. It can be moved along the top surface. That is, the chemical solution nozzle 52 attached to the tip of the arm portion 152C can move in the horizontal direction. Here, the drive of the rotary drive source 152A is controlled by a control unit described later.

Further, the liquid treatment unit 34A has a circulation pipe 57 that connects the chemical liquid pipe 54 and the chemical liquid tank 53 on the upstream side (that is, the chemical liquid tank 53 side) of the chemical liquid valve 56, and a circulation valve that opens and closes the inside of the circulation pipe 57. The 58 and a temperature control device 59 for adjusting the temperature of the chemical solution flowing through the circulation pipe 57 are provided.

The opening and closing of the chemical solution valve 56 and the circulation valve 58 is controlled by a control unit described later. When the chemical solution in the chemical solution tank 53 is supplied to the chemical solution nozzle 52, the chemical solution valve 56 is opened and the circulation valve 58 is closed. In this state, the chemical liquid sent from the chemical liquid tank 53 to the chemical liquid pipe 54 by the liquid feeding device 55 is supplied to the chemical liquid nozzle 52.

On the other hand, when the supply of the chemical solution to the chemical solution nozzle 52 is stopped, the chemical solution valve 56 is closed and the circulation valve 58 is opened. In this state, the chemical liquid sent from the chemical liquid tank 53 to the chemical liquid pipe 54 by the liquid feeding device 55 returns to the inside of the chemical liquid tank 53 through the circulation pipe 57. Therefore, while the supply of the chemical solution to the chemical solution nozzle 52 is stopped, the chemical solution continues to circulate in the circulation path composed of the chemical solution tank 53, the chemical solution pipe 54, and the circulation pipe 57.

The temperature control device 59 regulates the temperature of the chemical solution flowing in the circulation pipe 57. Therefore, the chemical solution in the chemical solution tank 53 is heated in the circulation path while the supply is stopped, and is maintained at a temperature higher than room temperature.

Further, the opening degree of the chemical solution valve 56 can be adjusted so that a small amount of the chemical solution can be discharged from the chemical solution nozzle 52 to perform pre-dispensing. Further, a chemical solution recovery member (not shown here) is arranged in the vicinity of the chemical solution nozzle 52, and the pre-dispensed chemical solution is collected from the chemical solution nozzle 52.

Further, as shown in FIG. 2, the liquid treatment unit 34A has a rinse liquid nozzle 60 for discharging the rinse liquid toward the upper surface of the substrate W held by the spin chuck 51, and a rinse liquid nozzle 60 at the tip thereof. The rinse liquid arm 160 attached to the rinse liquid arm 160, the rinse liquid pipe 61 that supplies the rinse liquid from the rinse liquid supply source (not shown here) to the rinse liquid nozzle 60, and the rinse liquid nozzle 60 from the rinse liquid pipe 61. It is provided with a rinse liquid valve 62 for switching between supply and stop of the rinse liquid to. As the rinsing solution, DIW (deionized water) or the like is used.

The rinse liquid arm 160 includes a rotation drive source 160A, a shaft body 160B, and an arm portion 160C having one end fixed to the upper end of the shaft body 160B and a rinse liquid nozzle 60 attached to the other end.

In the rinse liquid arm 160, the shaft body 160B is rotated by the rotation drive source 160A, so that the rinse liquid nozzle 60 attached to the tip of the arm portion 160C is held on the spin chuck 51 on the upper surface of the substrate W or the dummy substrate. It becomes movable along the upper surface of the DW. That is, the rinse liquid nozzle 60 attached to the tip of the arm portion 160C can move in the horizontal direction. Here, the drive of the rotary drive source 160A is controlled by a control unit described later.

After the chemical solution is supplied to the substrate W by the chemical solution nozzle 52, the rinse solution is supplied to the substrate W from the rinse solution nozzle 60, so that the chemical solution adhering to the substrate W can be washed away.

Further, as shown in FIG. 2, the liquid treatment unit 34A includes a cleaning liquid nozzle 64 for discharging the cleaning liquid toward a predetermined portion (for example, spin base 51A) inside the processing chamber 50, and a cleaning liquid supply source (a cleaning liquid supply source (for example). Here, a cleaning liquid pipe 65 for supplying the cleaning liquid from (not shown) to the cleaning liquid nozzle 64, and a cleaning liquid valve 66 for switching between supply and stop of the cleaning liquid from the cleaning liquid pipe 65 to the cleaning liquid nozzle 64 are provided. As the cleaning liquid, DIW (deionized water) or the like is used.

The cleaning liquid nozzle 64 is attached to the inner wall of the processing chamber 50. While the substrate W or the dummy substrate DW is held by the spin chuck 51, the spin base 51A is rotated and the cleaning liquid is discharged from the cleaning liquid nozzle 64.

Then, the cleaning liquid discharged from the cleaning liquid nozzle 64 bounces off the upper surface of the substrate W or the upper surface of the dummy substrate DW, and the cleaning liquid is scattered in the processing chamber 50. By scattering the cleaning liquid in this way, various parts (processing cup 511, etc.) arranged in the processing chamber 50 can be cleaned.

The processing cup 511 is provided so as to surround the spin chuck 51, and is moved up and down in the vertical direction by a motor (not shown). The upper portion of the processing cup 511 has an upper position in which the upper end thereof is above the substrate W or the dummy substrate DW held by the spin base 51A and a lower position in which the upper end thereof is below the substrate W or the dummy substrate DW. Go up and down between.

The processing liquid scattered outward from the upper surface of the substrate W or the upper surface of the dummy substrate DW is received by the inner side surface of the processing cup 511. Then, the treatment liquid received by the treatment cup 511 is appropriately drained to the outside of the treatment chamber 50 through the drainage port 513 provided at the bottom of the treatment chamber 50 and inside the treatment cup 511.

An exhaust port 515 is provided on the side of the processing chamber 50. The atmosphere inside the processing chamber 50 is appropriately discharged to the outside of the processing chamber 50 through the exhaust port 515.

Further, as shown in FIG. 2, the liquid treatment unit 34A includes a membrane removal liquid nozzle 164 for discharging the membrane removal liquid toward a predetermined portion (for example, spin base 51A) inside the treatment chamber 50. Membrane removal liquid pipe 165 that supplies the membrane removal liquid from the membrane removal liquid supply source (not shown here) to the membrane removal liquid nozzle 164, and the membrane removal liquid from the membrane removal liquid pipe 165 to the membrane removal liquid nozzle 164. It is provided with a membrane removing liquid valve 166 for switching between supply and stop of supply. As the membrane removing solution, for example, dilute hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water is used. Further, by using degassed hydrofluoric acid as the membrane removing liquid, it is possible to suppress the oxidation of the substrate by oxygen contained in the treatment liquid or the like.

The membrane removing liquid nozzle 164 is attached to the inner wall of the processing chamber 50. While the substrate W or the dummy substrate DW is held by the spin chuck 51, the spin base 51A is rotated and the membrane removing liquid is discharged from the membrane removing liquid nozzle 164.

Then, the film removing liquid discharged from the film removing liquid nozzle 164 is a film formed on the upper surface of the substrate W or the upper surface of the dummy substrate DW (hereinafter, also referred to as a removal target film). To remove.

Further, as shown in FIG. 2, the liquid treatment unit 34A includes a film thickness measuring device 81 for measuring the film thickness of the film formed on the upper surface of the substrate W or the upper surface of the dummy substrate DW, and a film thickness. The measuring instrument 81 is provided with a measuring arm 181 attached to the tip thereof.

As the film thickness measuring device 81, for example, an optical displacement sensor or the like is used. By adjusting the measurement irradiation wavelength of the light emitted from the film thickness measuring device 81 to the substrate W or the like facing the film during measurement according to the film to be measured (hereinafter, also referred to as the film to be measured), various measures can be taken. It is possible to measure the thickness of the film to be measured (for example, a silicon film, and further, a film in which a cleaning treatment liquid or a drying treatment liquid is changed into a film due to coagulation or the like).

The measuring arm 181 includes a rotation drive source 181A, a shaft body 181B, and an arm portion 181C having one end fixed to the upper end of the shaft body 181B and a film thickness measuring device 81 attached to the other end.

In the measuring arm 181, the shaft body 181B is rotated by the rotation drive source 181A, so that the film thickness measuring instrument 81 attached to the tip of the arm portion 181C is held on the spin chuck 51 on the upper surface of the substrate W or the dummy substrate. It becomes movable along the upper surface of the DW. That is, the film thickness measuring instrument 81 attached to the tip of the arm portion 181C can move in the horizontal direction. Here, the drive of the rotary drive source 181A is controlled by a control unit described later.

The measurement arm 181 is located at least away from the upper surface of the substrate W or the upper surface of the dummy substrate DW with respect to the chemical solution arm 152 or the rinse solution arm 160. That is, the vertical height H1 of the measuring arm 181 (the length from the upper surface of the spin base 51A to the arm portion 181C or the film thickness measuring instrument 81) is the vertical height H2 of the chemical solution arm 152 (the spin base 51A). It is higher than the vertical height H3 (the length from the upper surface of the spin base 51A to the arm portion 160C or the rinse liquid nozzle 60) or the height H3 in the vertical direction of the rinse liquid arm 160 (the length from the upper surface to the arm portion 152C or the chemical liquid nozzle 52).

As described above, since the measurement arm 181 is located away from the upper surface of the substrate W or the upper surface of the dummy substrate DW, it rebounds when the chemical solution or the like is discharged to the upper surface of the substrate W or the upper surface of the dummy substrate DW. It is possible to prevent the liquid and the like from adhering to the film thickness measuring instrument 81.

As shown in the example of FIG. 2, the measuring arm 181 may be located farther from the upper surface of the spin base 51A than both the chemical solution arm 152 and the rinsing solution arm 160.

FIG. 3 is a plan view showing an example of the position of each arm in the liquid treatment unit 34A.

As an example is shown in FIG. 3, the chemical solution arm 152, the rinsing solution arm 160, and the measurement arm 181 are each movable in the radial direction (at least, the direction having the radial component) of the spin base 51A, and spin. The upper surface of the rotating substrate W or the upper surface of the dummy substrate DW can be scanned by the chuck 51.

FIG. 4 is a functional block diagram showing an example of the connection relationship between each element of the substrate processing device 1 and the control unit 7.

The hardware configuration of the control unit 7 is the same as that of a general computer. That is, the control unit 7 has a central processing unit (CPU) 71 that performs various arithmetic processes and a read-only memory (read only memory, that is, ROM) that is a read-only memory for storing a basic program. ) 72, a random access memory (RAM) 73 which is a readable and writable memory for storing various information, and a non-transient storage unit 74 for storing a control application (program) or data. And.

The CPU 71, ROM 72, RAM 73, and storage unit 74 are connected to each other by bus wiring 75 or the like.

The control application or data may be provided to the control unit 7 in a state of being recorded on a non-transient recording medium (for example, semiconductor memory, optical media, magnetic media, etc.). In this case, a reading device that reads the control application or data from the recording medium may be connected to the bus wiring 75.

Further, the control application or data may be provided to the control unit 7 from a server or the like via a network. In this case, it is preferable that the communication unit that performs network communication with the external device is connected to the bus wiring 75.

An input unit 76 and a display unit 77 are connected to the bus wiring 75. The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal monitor, and displays various information.

The control unit 7 is a drive unit that drives the operating unit of each liquid treatment unit (for example, the chemical liquid valve 56, the circulation valve 58, the rinse liquid valve 62, the cleaning liquid valve 66, the shutter 50C or the spin motor 51D), and the transfer mechanism 31. (For example, a motor for reciprocating movement of the transfer mechanism 31), an operating part of the indexer robot 23 (for example, a motor for driving the articulated arm 23B), an operating part of the transfer robot 33 (for example, a horizontal motor 133C). , Rotating motor 133D, vertical motor 133H, etc.) and controls their operation.

<About the operation of the board processing device>
Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 5 to 12.

In the operation described below, the substrate W housed in the substrate container 21 is carried into one of the liquid processing units via the indexer robot 23, the transfer mechanism 31, and the transfer robot 33, and the substrate W is further loaded. This is an operation related to chemical liquid treatment performed by the substrate processing apparatus 1 while being held by the spin chuck 51.

<Operation 1 related to chemical treatment>
FIG. 5 is a sequence diagram showing an example of the operation related to the above-mentioned chemical treatment. Further, FIG. 6 is a flowchart showing an example of the operation related to the chemical treatment according to FIG.

As an example is shown in FIG. 5, first, a rinsing process is performed (step ST1 in FIG. 6). In the rinsing treatment, the rinsing liquid is discharged from the rinsing liquid nozzle 60 under the control of the control unit 7, so that deposits and the like on the upper surface of the substrate W can be washed away. As the rinsing solution, for example, DIW (deionized water) is used.

Next, a drying process is performed (step ST2 in FIG. 6). In the drying process, the substrate W is dried by rotating the spin base 51A after supplying IPA (isopropyl alcohol) or the like to the substrate W under the control of the control unit 7.

Next, the film thickness is measured (step ST3 in FIG. 6). In the film thickness measurement, the arm portion 181C of the measuring arm 181 is rotated under the control of the control unit 7, and the film thickness measuring device 81 attached to the tip of the arm portion 181C faces an arbitrary position on the upper surface of the substrate W. And place it. The same applies to the film thickness measurement described below, but by performing cyclic control (intermittent control) by synchronizing the rotation of the arm portion 181C of the measurement arm 181 and the rotation of the rotation shaft 51C, for example. It is also possible to obtain a film thickness profile in the radial direction of the substrate W.

Then, under the control of the control unit 7, the film thickness measuring device 81 measures the film thickness of the film (measurement target film) formed on the upper surface of the substrate W to be processed. Here, the film (measurement target film) formed on the upper surface of the substrate W is, for example, a silicon film formed on the upper surface of the silicon semiconductor substrate.

Next, the processing conditions are determined based on the result of the film thickness measurement (step ST4 in FIG. 6). Specifically, the concentration of the chemical solution used for the chemical solution treatment, the time of the chemical solution treatment, and the like are adjusted based on the result of the film thickness measurement.

Next, chemical treatment is performed (step ST5 in FIG. 6). In the chemical treatment, the substrate W is etched or the like by ejecting the chemical from the chemical nozzle 52 under the control of the control unit 7. For example, the substrate W is etched using hydrofluoric acid (HF) and nitric acid (HNO ₃ ), which is a mixed solution of nitric acid.

Next, a rinsing process is performed (step ST6 in FIG. 6). In the rinsing treatment, the rinsing liquid is discharged from the rinsing liquid nozzle 60 under the control of the control unit 7, so that the chemical liquid and the like on the upper surface of the substrate W can be washed away. As the rinsing solution, for example, DIW (deionized water) is used.

Next, a drying process is performed (step ST7 in FIG. 6). The drying treatment is the same as the drying treatment in step ST2.

Next, the film thickness is measured (step ST8 in FIG. 6). In the film thickness measurement, the arm portion 181C of the measuring arm 181 is rotated under the control of the control unit 7, and the film thickness measuring device 81 attached to the tip of the arm portion 181C is placed at an arbitrary position on the upper surface of the substrate W. Place them facing each other. Then, under the control of the control unit 7, the film thickness measuring device 81 measures the film thickness of the film (measurement target film) formed on the upper surface of the substrate W after the chemical treatment.

Next, the effect of the chemical treatment is confirmed based on the result of the film thickness measurement (step ST9 in FIG. 6). Specifically, whether or not it is necessary to perform the chemical treatment again based on the result of the film thickness measurement in step ST8 or the result of the film thickness measurement in step ST3 and the result of the film thickness measurement in step ST8. Is judged.

Then, when the effect of the chemical treatment is sufficient (the etching treatment is performed to a desired film thickness), that is, when it corresponds to "YES" branched from step ST9 shown in FIG. The operation related to the chemical treatment is terminated.

On the other hand, if the effect of the chemical treatment is not sufficient, that is, if it corresponds to "NO" branching from step ST9 shown in FIG. 6, the process returns to step ST4 shown in FIG. Then, the treatment conditions such as the concentration of the chemical solution used for the chemical solution treatment and the time of the chemical solution treatment are determined based on the result of the film thickness measurement.

<Operation 2 related to chemical treatment>
FIG. 7 is a sequence diagram showing a modified example of the operation related to the above-mentioned chemical treatment. Further, FIG. 8 is a flowchart showing a modified example of the operation related to the chemical treatment according to FIG. 7.

In the modified example of the operation related to the chemical treatment shown in FIG. 7, the drying process among the operations shown in FIG. 5 is omitted. Since the film thickness is measured during the rinsing treatment, the processing time required for the operation related to the chemical solution treatment is shortened.

As an example is shown in FIG. 7, first, rinsing treatment and film thickness measurement are performed (step ST11 in FIG. 8). The rinsing treatment is the same as the rinsing treatment in step ST1 of FIG. Further, the film thickness measurement is the same as the film thickness measurement in step ST3 of FIG.

In this step, the rinsing liquid arm 160 may rotate for the rinsing process. At the same time, the measuring arm 181 can rotate for film thickness measurement. Here, since the height H3 of the rinsing liquid arm 160 and the height H1 of the measuring arm 181 are different, they can operate without interfering with each other.

However, it is assumed that at least a part of the measurement irradiation wavelength range of the light used for film thickness measurement is outside the absorption wavelength range of the rinse liquid. For example, in the case of an optical film thickness measuring instrument using halogen light, the measurement irradiation wavelength range is about 890 nm to 1640 nm, which is the absorption wavelength range when DIW (deionized water) is used as the rinsing solution. The entire range is out of range for a certain 2 μm to 10 μm.

Next, the processing conditions are determined based on the result of the film thickness measurement (step ST12 in FIG. 8). The determination of the processing conditions is the same as the determination of the processing conditions in step ST4 of FIG.

Next, chemical treatment is performed (step ST13 in FIG. 8). The chemical treatment is the same as the chemical treatment in step ST5 of FIG. If necessary, a drying treatment may be performed before the chemical treatment.

Next, rinsing and film thickness measurement are performed (step ST14 in FIG. 8). The rinsing treatment is the same as the rinsing treatment in step ST6 of FIG. Further, the film thickness measurement is the same as the film thickness measurement in step ST8 of FIG.

However, it is assumed that at least a part of the measurement irradiation wavelength range of the light used for film thickness measurement is outside the absorption wavelength range of the rinse liquid.

Also in this step, the rinsing liquid arm 160 can rotate for the rinsing process. At the same time, the measuring arm 181 can rotate for film thickness measurement. Here, since the height H3 of the rinsing liquid arm 160 and the height H1 of the measuring arm 181 are different, they can operate without interfering with each other.

Next, the effect of the chemical treatment is confirmed based on the result of the film thickness measurement (step ST15 in FIG. 8).

Then, when the effect of the chemical treatment is sufficient (the etching treatment is performed to a desired film thickness), that is, when it corresponds to "YES" branched from step ST15 shown in FIG. The operation related to the chemical treatment is terminated.

On the other hand, if the effect of the chemical treatment is not sufficient, that is, if it corresponds to "NO" branching from step ST15 shown in FIG. 8, the process returns to step ST12 shown in FIG. Then, the treatment conditions such as the concentration of the chemical solution used for the chemical solution treatment and the time of the chemical solution treatment are determined based on the result of the film thickness measurement.

Here, the film thickness measurement in step ST14 may be performed even while the chemical treatment in step ST13 is being performed. In this case as well, it is assumed that at least a part of the measurement irradiation wavelength range of the light used for the film thickness measurement is outside the absorption wavelength range of the chemical solution. In this step, the chemical solution arm 152 can rotate for the chemical solution treatment. At the same time, the measuring arm 181 can rotate for film thickness measurement. Here, since the height H2 of the chemical solution arm 152 and the height H1 of the measuring arm 181 are different, they can operate without interfering with each other.

Further, by measuring the film thickness while the chemical solution treatment is being performed and reflecting the result of the film thickness measurement in the ongoing chemical solution treatment, the treatment content can be corrected at an early timing. Therefore, the degree of freedom of correction is increased, and as a result, the processing accuracy is improved.

<Operation 3 related to chemical treatment>
FIG. 9 is a sequence diagram showing a modified example of the operation related to the above-mentioned chemical treatment. Further, FIG. 10 is a flowchart showing a modified example of the operation related to the chemical treatment according to FIG.

In the modified example of the operation related to the chemical solution treatment shown in FIG. 9, the film removing treatment is further added to the operation shown in FIG. 7. By performing the film removal treatment before the film thickness measurement, the accuracy of the film thickness measurement is improved.

As an example is shown in FIG. 9, first, a rinsing treatment is performed, and then a film removal treatment is performed (step ST21 in FIG. 10). In the film removing process, the film removing liquid is discharged from the film removing liquid nozzle 164 under the control of the control unit 7, so that the film is formed on the upper surface of the film (measurement target film) formed on the upper surface of the substrate W. The membrane is removed. The film to be removed (film to be removed) is, for example, a silicon oxide film. However, the film to be removed may be another oxide film or nitride film including a naturally occurring film.

Next, rinsing and film thickness measurement are performed (step ST22 in FIG. 10). The process is the same as the process in step ST11 of FIG.

Next, the processing conditions are determined based on the result of the film thickness measurement (step ST23 in FIG. 10). The determination of the processing conditions is the same as the determination of the processing conditions in step ST12 of FIG.

Next, chemical treatment is performed (step ST24 in FIG. 10). The chemical treatment is the same as the chemical treatment in step ST13 of FIG. If necessary, a drying treatment may be performed before the chemical treatment.

Next, rinsing and film thickness measurement are performed (step ST25 in FIG. 10). The process is the same as the process in step ST14 of FIG.

Next, the effect of the chemical treatment is confirmed based on the result of the film thickness measurement (step ST26 in FIG. 10).

Then, when the effect of the chemical treatment is sufficient (the etching treatment is performed to a desired film thickness), that is, when it corresponds to "YES" branched from step ST26 shown in FIG. The operation related to the chemical treatment is terminated.

On the other hand, if the effect of the chemical treatment is not sufficient, that is, if it corresponds to "NO" branching from step ST26 shown in FIG. 10, the process returns to step ST23 shown in FIG. Then, the treatment conditions such as the concentration of the chemical solution used for the chemical solution treatment and the time of the chemical solution treatment are determined based on the result of the film thickness measurement.

As described above, by adding the film removal treatment before the film thickness measurement, the film thickness can be measured after the film to be removed formed on the upper surface of the film to be measured can be reliably removed. The measurement accuracy of the film thickness of the film to be measured is improved.

The film thickness measurement in step ST25 may be performed even while the chemical treatment in step ST24 is being performed. In this case as well, it is assumed that at least a part of the measurement irradiation wavelength range of the light used for the film thickness measurement is outside the absorption wavelength range of the chemical solution.

Further, the drying treatment may be performed after the rinsing treatment as in the example shown in FIG. 5 without performing the rinsing treatment and the film thickness measurement at the same time.

<Operation related to processing room cleaning>
Next, in the processing chamber 50, the operation related to the chemical solution treatment is performed a predetermined number of times in each liquid treatment unit, that is, after a predetermined number of substrates W are processed in each liquid treatment unit. The operation related to cleaning will be described.

FIG. 11 is a sequence diagram showing an example of the operation related to the above-mentioned processing chamber cleaning. Further, FIG. 12 is a flowchart showing an example of the operation related to the cleaning of the processing chamber corresponding to FIG.

As an example is shown in FIG. 11, first, a predetermined number of substrates are processed (step ST31 in FIG. 12). The substrate processing is a processing corresponding to the operation related to the chemical solution processing performed by the substrate processing apparatus 1.

Next, the dummy substrate DW is arranged in the liquid treatment unit (step ST32 in FIG. 12). In this step, first, the transfer robot 33 carries out one processed substrate W from, for example, the liquid processing unit 34A by using, for example, the hand 33D. Then, the transfer robot 33 passes the substrate W to the transfer mechanism 31.

Next, the transfer robot 33 uses, for example, the hand 33C to carry out one dummy substrate DW housed in the dummy substrate container 32. Then, the transfer robot 33 arranges the dummy substrate DW on the upper surface of the spin base 51A in the liquid processing unit 34A, for example.

At this timing, the exchange processing of the chemical solution used for the substrate processing is started.

Next, the film removal process is performed (step ST33 in FIG. 12). In the film removing process, the film removing liquid is discharged from the film removing liquid nozzle 164 under the control of the control unit 7, so that the film is formed on the upper surface of the film (measurement target film) formed on the upper surface of the dummy substrate DW. The existing film (membrane to be removed) is removed. The film to be removed is, for example, a silicon oxide film. However, the film to be removed may be another oxide film or nitride film including a naturally occurring film. Further, in the step, deposits such as dust adhering to the upper surface of the dummy substrate DW while being housed in the dummy substrate container 32 may also be removed.

Next, a processing chamber cleaning process is performed (step ST34 in FIG. 12). In the processing chamber cleaning process, the cleaning liquid is discharged from the cleaning liquid nozzle 64 under the control of the control unit 7, so that the cleaning liquid bounces off the upper surface of the dummy substrate DW and the cleaning liquid is scattered in the processing chamber 50. As the cleaning liquid, DIW (deionized water) or the like is used.

By scattering the cleaning liquid in this way, various parts (processing cup 511, etc.) arranged in the processing chamber 50 can be cleaned. In this step, deposits such as dust adhering to the upper surface of the dummy substrate DW while being housed in the dummy substrate container 32 may also be removed.

Next, the film thickness is measured (step ST35 in FIG. 12). In the film thickness measurement, the arm portion 181C of the measuring arm 181 is rotated under the control of the control unit 7, and the film thickness measuring instrument 81 attached to the tip of the arm portion 181C is mounted on the upper surface of the dummy substrate DW on the spin base 51A. It is arranged to face an arbitrary position in.

Then, under the control of the control unit 7, the film thickness measuring device 81 measures the film thickness of the film (for example, a silicon film) formed on the upper surface of the dummy substrate DW to be processed.

Here, the thickness of the measurement target film formed on the upper surface of the dummy substrate DW is a known value. Therefore, in the film thickness measurement, it is confirmed whether or not the known thickness of the film to be measured formed on the upper surface of the dummy substrate DW is reproduced by the measurement (step ST36 in FIG. 12).

Then, when the result of the above film thickness measurement reproduces the known thickness of the film to be measured, that is, when it corresponds to "YES" branched from step ST36 shown in FIG. The operation related to the chamber cleaning is completed, and the process proceeds to a new substrate processing after waiting for the completion of the chemical solution exchange processing used for the substrate processing.

On the other hand, when the result of the above film thickness measurement does not reproduce the known thickness of the film to be measured, that is, when it corresponds to "NO" branched from step ST36 shown in FIG. 12 as an example. For example, the film thickness measuring instrument 81 and related equipment are calibrated by the control of the control unit 7 (step ST37 in FIG. 12). Specifically, the film thickness measuring instrument 81 and related equipment so that the measured value of the film formed on the upper surface of the dummy substrate DW and having a known thickness by the film thickness measuring instrument 81 approaches the known value. To calibrate. Then, the process returns to step ST35, and the film thickness is measured again.

Of the above, the film removal treatment is performed in order to improve the accuracy of film thickness measurement, but the treatment may be omitted.

Although the film thickness measurement can be performed at the same time as the treatment room cleaning, it is desirable to perform the film thickness measurement after the treatment room cleaning from the viewpoint of ensuring the reproducibility of the film thickness measurement.

Further, although the sequence diagram of FIG. 11 does not reflect the time width of each step, the ratio of the processing time between the processing room cleaning and the film thickness measurement can be, for example, 8: 2.

<About the effect caused by the above-described embodiment>
Next, an example of the effect produced by the above-described embodiment will be shown. In the following description, the effect is described based on the specific configuration shown in the embodiment described above, but to the extent that the same effect occurs, the examples in the present specification. May be replaced with other specific configurations indicated by.

According to the embodiment described above, the substrate processing apparatus includes a substrate holding portion, a first arm, and a second arm. Here, the substrate holding portion corresponds to, for example, the spin chuck 51. Further, the first arm corresponds to, for example, the measurement arm 181. The second arm corresponds to, for example, any one of the chemical solution arm 152 and the rinse solution arm 160. The spin chuck 51 holds a substrate having a film to be measured formed on the upper surface thereof. Here, the substrate corresponds to, for example, any one of the substrate W and the dummy substrate DW. A film thickness measuring device 81 for measuring the film thickness of the film to be measured is attached to the measuring arm 181. Further, the measuring arm 181 is rotatable on a surface along the upper surface of the substrate. The rinse liquid arm 160 or the chemical liquid arm 152 is attached with a first discharge nozzle for discharging the treatment liquid for processing the substrate. Here, the first discharge nozzle corresponds to, for example, a rinse liquid nozzle 60 or a chemical liquid nozzle 52. Further, the rinse liquid arm 160 and the chemical liquid arm 152 are rotatable on a surface along the upper surface of the substrate. Here, the first distance (corresponding to the height H1 in FIG. 2), which is the distance between the measuring arm 181 and the upper surface of the spin chuck 51, is the distance between the rinse liquid arm 160 or the chemical liquid arm 152 and the upper surface of the spin chuck 51. It is longer than the second distance (corresponding to height H3 or height H2 in FIG. 2), which is the distance between.

According to such a configuration, the film thickness measuring device 81 is attached, and the measuring arm 181 that is rotatable on the surface along the upper surface of the substrate is provided, so that the degree of freedom of the measuring point of the film thickness measurement is increased. Can be done. Further, since the height H1 of the measuring arm 181 is higher than the height H3 of the rinsing liquid arm 160 or the height H2 of the chemical liquid arm 152, even if both arms rotate at the same time, they do not collide. Further, since the measurement arm 181 is not located below the rinse liquid nozzle 60 or the chemical liquid nozzle 52, the processing liquid discharged from both the rinse liquid arm 160 and the chemical liquid arm 152 is erroneously measured. It does not adhere to 181.

In addition, when at least one of the other configurations shown in the specification of the present application is appropriately added to the configurations described above, that is, the present specification not mentioned as the configurations described above. Similar effects can be produced even if other configurations, for example, are added as appropriate.

Further, according to the embodiment described above, the substrate processing apparatus operates at least the film thickness measuring device 81, the measuring arm 181 and the rinsing liquid nozzle 60, the rinsing liquid arm 160, the chemical liquid nozzle 52 and the chemical liquid arm 152. A control unit 7 for controlling is provided. The control unit 7 measures the film thickness of the film to be measured by the film thickness measuring device 81 on the measuring arm 181 and discharges the treatment liquid by the rinsing liquid nozzle 60 (or the chemical liquid nozzle 52) on the rinsing liquid arm 160 (or the chemical liquid arm 152). To be done in parallel. With such a configuration, it is possible to perform parallel processing of substrate processing using a processing liquid and film thickness measurement. Therefore, the total processing time can be shortened. Further, since the film thickness of the substrate to be processed can be measured in real time in parallel with the substrate processing, the processing content can be corrected at an early timing. Therefore, the degree of freedom of correction is increased, and as a result, the processing accuracy is improved. Further, when the substrate processing and the film thickness measurement are performed in parallel, the height H1 of the measuring arm 181 is higher than the height H3 of the rinse liquid arm 160 or the height H2 of the chemical liquid arm 152, so that the substrate is repelled. It is possible to prevent the treated liquid from adhering to the film thickness measuring device 81.

Further, according to the embodiment described above, the substrate processing apparatus includes a second discharge nozzle for discharging a film removing liquid for removing the removal target film formed on the upper surface of the measurement target film. Here, the second discharge nozzle corresponds to, for example, the membrane removing liquid nozzle 164. The control unit 7 also controls the operation of the membrane removing liquid nozzle 164. Then, the control unit 7 removes the film to be removed by discharging the film removing liquid from the film removing liquid nozzle 164, and then informs the film thickness measuring device 81 of the film thickness of the film to be measured from which the film to be removed has been removed. Let me measure. According to such a configuration, the removal target film formed on the upper surface of the measurement target film can be removed before the film thickness measurement, so that the accuracy of the film thickness measurement is improved.

Further, according to the embodiment described above, the control unit 7 adjusts the time for the chemical solution nozzle 52 to discharge the treatment liquid based on the result of the film thickness measurement of the film to be measured by the film thickness measuring device 81. To do. According to such a configuration, the treatment conditions can be determined before the chemical treatment, and the effect of the chemical treatment can be confirmed after the chemical treatment, based on the result of the film thickness measurement. Can be done.

Further, according to the embodiment described above, the substrate is a dummy substrate DW on which a measurement target film having a predetermined thickness is formed on the upper surface. Then, the control unit 7 calibrates the film thickness measuring device 81 based on the result of measuring the film thickness of the film to be measured on the upper surface of the dummy substrate DW by the film thickness measuring device 81. According to such a configuration, using a measurement target film whose thickness on the upper surface of the dummy substrate DW is known, it is confirmed whether or not the value measured by the film thickness measuring device 81 has reproducibility, and further. If necessary, the film thickness measuring device 81 can be calibrated. Therefore, the reproducibility of the film thickness measurement by the film thickness measuring device 81 can be maintained high, and the accuracy of the film thickness measurement can be improved.

Further, according to the embodiment described above, the film thickness measuring instrument 81 is an optical displacement sensor. Then, at least a part of the measurement irradiation wavelength range of the film thickness measuring device 81 is outside the absorption wavelength range of the treatment liquid. According to such a configuration, the light emitted from the film thickness measuring device 81 is reflected without being absorbed by the treatment liquid and can be received by the film thickness measuring device 81. Therefore, the film thickness is measured due to the influence of the substrate processing. It is possible to suppress a decrease in the accuracy of.

Further, according to the embodiment described above, the entire range of the measurement irradiation wavelength of the film thickness measuring device 81 is outside the range of the absorption wavelength of the treatment liquid. According to such a configuration, the light in the entire wavelength range emitted from the film thickness measuring instrument 81 is reflected without being absorbed by the processing liquid and can be received by the film thickness measuring instrument 81, so that the influence of the substrate processing It is possible to prevent the accuracy of film thickness measurement from being lowered.

According to the embodiment described above, in the substrate processing method, the step of measuring the film thickness of the film to be measured by using the film thickness measuring device 81 and the rinsing liquid in the rinsing liquid arm 160 (or the chemical liquid arm 152). The present invention includes a step of processing the substrate using the processing liquid discharged from the nozzle 60 (or the chemical solution nozzle 52). Here, the height H1 corresponding to the distance between the measuring arm 181 and the upper surface of the spin chuck 51 is the height corresponding to the distance between the rinse liquid arm 160 (or the chemical liquid arm 152) and the upper surface of the spin chuck 51. Longer than H3 (or height H2).

According to such a configuration, the film thickness measuring device 81 is attached, and the measuring arm 181 that is rotatable on the surface along the upper surface of the substrate is provided, so that the degree of freedom of the measuring point of the film thickness measurement is increased. Can be done.

In addition, when at least one of the other configurations shown in the specification of the present application is appropriately added to the configurations described above, that is, the present specification not mentioned as the configurations described above. Similar effects can be produced even if other configurations, for example, are added as appropriate.

Further, if there are no particular restrictions, the order in which each process is performed can be changed.

Further, according to the embodiment described above, the step of measuring the film thickness of the film to be measured by using the film thickness measuring device 81 in the measuring arm 181 and the rinsing in the rinsing liquid arm 160 (or the chemical liquid arm 152). The step of processing the substrate using the treatment liquid discharged from the liquid nozzle 60 (or the chemical liquid nozzle 52) is performed in parallel. With such a configuration, it is possible to perform parallel processing of substrate processing using a processing liquid and film thickness measurement. Therefore, the total processing time can be shortened.

Further, according to the embodiment described above, in the substrate processing method, the removal target film formed on the upper surface of the measurement target film is removed before the film thickness of the measurement target film is measured by the film thickness measuring device 81. A step of discharging a film removing liquid for the purpose is provided. According to such a configuration, the removal target film formed on the upper surface of the measurement target film can be removed before the film thickness measurement, so that the accuracy of the film thickness measurement is improved.

Further, according to the embodiment described above, in the substrate processing method, the time for the chemical solution nozzle 52 to discharge the processing solution is adjusted based on the result of the film thickness measurement of the film to be measured by the film thickness measuring device 81. Provide a process to do. According to such a configuration, the treatment conditions can be determined before the chemical treatment, and the effect of the chemical treatment can be confirmed after the chemical treatment, based on the result of the film thickness measurement. Can be done.

Further, according to the embodiment described above, the substrate is a dummy substrate DW having a measurement target film having a predetermined thickness formed on the upper surface thereof. Then, in the substrate processing method, a step of calibrating the film thickness measuring device 81 based on the result of measuring the film thickness of the film to be measured on the upper surface of the dummy substrate DW is provided. According to such a configuration, using a measurement target film whose thickness on the upper surface of the dummy substrate DW is known, it is confirmed whether or not the value measured by the film thickness measuring device 81 has reproducibility, and further. If necessary, the film thickness measuring device 81 can be calibrated.

<About the modified example in the above-described embodiment>
In the above embodiment, the film removing liquid nozzle 164 may be attached to the tip of an arm that can move along the upper surface of the substrate W or the upper surface of the dummy substrate DW.

Further, the chemical solution nozzle 52, the rinse solution nozzle 60, and the membrane removing solution nozzle 164 may be attached to the tip of the same arm.

Further, the film thickness measuring device 81 in the above embodiment is an optical displacement sensor that measures a solidified film in which the treatment liquid or the like has changed due to solidification or the like, but can also measure a liquid or amorphous film. A film thickness measuring device may be used.

In this case, the target film may be removed by, for example, increasing the rotation speed of the spin base 51A to scatter the treatment liquid and drain it.

In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, conditions of implementation, etc. of each component may also be described, but these are one example in all aspects. However, it is not limited to those described in the present specification.

Therefore, innumerable variants and equivalents for which examples are not shown are envisioned within the scope of the techniques disclosed herein. For example, it is assumed that at least one component is modified, added or omitted.

In addition, each component described in the above-described embodiment is assumed to be software or firmware and corresponding hardware, and in both concepts, each component is a "part". Alternatively, it is referred to as a "processing circuit" or the like.

Z1 Rotation axis Z2 Rotation axis TW Processing tower W board DW Dummy board 1 Board processing device 2 Indexer section 3 Processing section 3A Conveyance module 3B Processing module 7 Control unit 21 Board container 22, 133A Stage 23 Indexer robot 23A Base Articulated arm 23C, 23D, 33C, 33D Hand 31 Transfer mechanism 32 Dummy board container 33 Transfer robot 33A Horizontal drive unit 33B Vertical drive unit 33E Strut 33F Connector 34A, 34B, 34C Liquid processing unit 50 Processing room 50A Partition 50B Opening Part 50C Shutter 51 Spin chuck 51A Spin base 51C Rotating shaft 51D Spin motor 52 Chemical solution nozzle 53 Chemical solution tank 54 Chemical solution piping 55 Liquid transfer device 56 Chemical solution valve 57 Circulation piping 58 Circulation valve 59 Temperature control device 60 Rinse solution nozzle 61 Rinse solution piping 62 Rinse liquid valve 64 Cleaning liquid nozzle 65 Cleaning liquid piping 66 Cleaning liquid valve 71 CPU
72 ROM
73 RAM
74 Storage unit 75 Bus wiring 76 Input unit 77 Display unit 81 Film thickness measuring instrument 133B Horizontal slider 133C Horizontal motor 133D Rotation motor 133G Vertical slider 133H Vertical motor 152 Chemical solution arm 152A, 160A, 181A Rotation drive source 152B, 160B, 181B Body 152C, 160C, 181C Arm part 160 Rinse liquid arm 164 Membrane removal liquid nozzle 165 Membrane removal liquid piping 166 Membrane removal liquid valve 181 Measuring arm 511 Processing cup 513 Drainage port 515 Exhaust port

Claims (12)

A substrate holding portion for holding a substrate having a film to be measured formed on the upper surface,
A first arm to which a film thickness measuring device for measuring the film thickness of the film to be measured is attached and which is rotatable on a surface along the upper surface of the substrate,
A first discharge nozzle for discharging a processing liquid for processing the substrate is attached, and a second arm that is rotatable on a surface along the upper surface of the substrate is provided.
The first distance, which is the distance between the first arm and the upper surface of the substrate holding portion, is larger than the second distance, which is the distance between the second arm and the upper surface of the substrate holding portion. long,
Board processing equipment. The substrate processing apparatus according to claim 1.
Further including at least the film thickness measuring device, the first arm, the first discharge nozzle, and a control unit for controlling the operation of the second arm.
The control unit simultaneously measures the film thickness of the film to be measured by the film thickness measuring device in the first arm and discharges the processing liquid by the first discharge nozzle in the second arm. Let me do
Board processing equipment. The substrate processing apparatus according to claim 2.
A second ejection nozzle for ejecting a film removing liquid for removing the film to be removed formed on the upper surface of the film to be measured is further provided.
The control unit also controls the operation of the second discharge nozzle.
The control unit removes the film to be removed by discharging the film removing liquid from the second discharge nozzle, and then the film thickness measuring device is used to remove the film to be removed. Let me measure the film thickness,
Board processing equipment. The substrate processing apparatus according to claim 2 or 3.
The control unit adjusts the time for the first discharge nozzle to discharge the treatment liquid based on the result of the film thickness measurement of the film to be measured by the film thickness measuring device.
Board processing equipment. The substrate processing apparatus according to any one of claims 1 to 4.
The film thickness measuring instrument is an optical displacement sensor.
At least a part of the measurement irradiation wavelength range of the film thickness measuring device is outside the absorption wavelength range of the treatment liquid.
Board processing equipment. The substrate processing apparatus according to claim 5.
The entire range of the measurement irradiation wavelength of the film thickness measuring device is outside the range of the absorption wavelength of the treatment liquid.
Board processing equipment. A substrate holding portion for holding a substrate on which a film to be measured having a predetermined thickness is formed on the upper surface, and a substrate holding portion.
A first arm to which a film thickness measuring device for measuring the film thickness of the film to be measured is attached and which is rotatable on a surface along the upper surface of the substrate,
A second arm to which a first discharge nozzle for discharging a processing liquid for processing the substrate is attached and rotatable on a surface along the upper surface of the substrate,
It is provided with at least a control unit that controls the film thickness measuring device.
The control unit calibrates the film thickness measuring device based on the result of measuring the film thickness of the film to be measured on the upper surface of the substrate by the film thickness measuring device.
Board processing equipment. On a surface along the upper surface of the substrate on which a substrate holding portion for holding a substrate having a film to be measured formed on the upper surface and a film thickness measuring device for measuring the thickness of the film to be measured are attached. A rotatable first arm and a second discharge nozzle for discharging a processing liquid for processing the substrate are attached, and a second rotatable surface along the upper surface of the substrate is attached. It is a substrate processing method using a substrate processing apparatus provided with an arm.
The step of measuring the film thickness of the film to be measured using the film thickness measuring device, and
The present invention includes a step of processing the substrate using the processing liquid discharged from the first discharge nozzle.
The first distance, which is the distance between the first arm and the upper surface of the substrate holding portion, is larger than the second distance, which is the distance between the second arm and the upper surface of the substrate holding portion. long,
Substrate processing method. The substrate processing method according to claim 8.
The step of measuring the film thickness of the film to be measured by using the film thickness measuring device in the first arm, and the processing liquid discharged from the first ejection nozzle in the second arm are used. Perform the process of processing the substrate in parallel,
Substrate processing method. The substrate processing method according to claim 8 or 9.
Prior to measuring the film thickness of the film to be measured by the film thickness measuring device, a step of discharging a film removing liquid for removing the film to be removed formed on the upper surface of the film to be measured is further provided.
Substrate processing method. The substrate processing method according to any one of claims 8 to 10.
A step of adjusting the time for the first discharge nozzle to discharge the treatment liquid is further provided based on the result of the film thickness measurement of the film to be measured by the film thickness measuring device.
Substrate processing method. A substrate holding portion for holding a substrate on which a measurement target film having a predetermined thickness is formed on the upper surface, and a film thickness measuring device for measuring the film thickness of the measurement target film are attached, and the above-mentioned A first arm that is rotatable on a surface along the upper surface of the substrate and a first discharge nozzle for discharging a treatment liquid for processing the substrate are attached, and on a surface along the upper surface of the substrate. It is a substrate processing method using a substrate processing apparatus including a second arm that can be rotated.
The step of measuring the film thickness of the film to be measured using the film thickness measuring device, and
A step of processing the substrate using the processing liquid discharged from the first discharge nozzle, and
A step of calibrating the film thickness measuring device based on the result of measuring the film thickness of the film to be measured on the upper surface of the substrate is provided.
Substrate processing method.

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