CN116438633A - Substrate processing apparatus, substrate processing method, and computer-readable recording medium - Google Patents

Substrate processing apparatus, substrate processing method, and computer-readable recording medium Download PDF

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Publication number
CN116438633A
CN116438633A CN202180073335.4A CN202180073335A CN116438633A CN 116438633 A CN116438633 A CN 116438633A CN 202180073335 A CN202180073335 A CN 202180073335A CN 116438633 A CN116438633 A CN 116438633A
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Prior art keywords
substrate
film
etching
unit
liquid
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CN202180073335.4A
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Chinese (zh)
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小杉仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of measuring the thickness of a film formed on the surface of a substrate with high accuracy. The substrate processing apparatus includes: a rotation holding unit configured to hold a substrate and rotate the substrate; a chemical liquid supply unit configured to supply an etching liquid to the surface of the substrate while the substrate is rotated by the rotation holding unit; a rinse liquid supply unit configured to supply a rinse liquid to the surface of the substrate while the spin holding unit rotates the substrate; a measurement unit configured to measure the thickness of the film in a state where the measurement head is located in the vicinity of the surface of the substrate; a driving unit configured to move the measuring head relative to the surface of the substrate in a horizontal direction during measurement by the measuring unit; and an auxiliary supply unit configured to supply a rinse liquid to the gap between the measurement head and the surface of the substrate during measurement by the measurement unit, so that the gap is filled with the rinse liquid.

Description

Substrate processing apparatus, substrate processing method, and computer-readable recording medium
Technical Field
The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium.
Background
When a substrate (for example, a semiconductor wafer) is subjected to micromachining to manufacture a semiconductor device, an etching process is performed to remove a thin film (for example, a silicon oxide film) formed on the surface of the substrate with a chemical solution (for example, an etching solution such as hydrofluoric acid) until the thin film has a predetermined thickness. Patent document 1 discloses an apparatus for measuring the film thickness of a thin film at the same timing as the etching progress of the thin film to control the film thickness (etching amount) of the thin film. The apparatus includes an optical detector (probe) configured to detect an interference state between reflected light from a film surface and reflected light from a substrate surface, and a control unit configured to calculate a film thickness based on the interference state.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2003-332299
Disclosure of Invention
Problems to be solved by the invention
The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of measuring the thickness of a film formed on the surface of a substrate with high accuracy.
Solution for solving the problem
An example of the substrate processing apparatus includes: a rotation holding unit configured to hold a substrate having a film formed on a surface thereof and rotate the substrate; a chemical liquid supply unit configured to supply an etching liquid to the surface of the substrate while the substrate is rotated by the rotation holding unit; a rinse liquid supply unit configured to supply a rinse liquid to the surface of the substrate while the spin holding unit rotates the substrate; a measurement unit configured to measure the thickness of the film in a state where the measurement head is located in the vicinity of the surface of the substrate; a driving unit configured to move the measuring head relative to the surface of the substrate in a horizontal direction during measurement by the measuring unit; and an auxiliary supply unit configured to supply a rinse liquid to the gap between the measurement head and the surface of the substrate during measurement by the measurement unit, so that the gap is filled with the rinse liquid.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the substrate processing apparatus, the substrate processing method, and the computer-readable recording medium of the present disclosure, the thickness of the film formed on the surface of the substrate can be measured with high accuracy.
Drawings
Fig. 1 is a plan view schematically showing an example of a substrate processing apparatus.
Fig. 2 is a side view schematically showing an example of the processing unit.
Fig. 3 is a perspective view schematically illustrating a portion of the processing unit of fig. 2.
Fig. 4 is a cross-sectional view schematically illustrating a portion of the processing unit of fig. 2.
Fig. 5 is a block diagram showing an example of a main part of the substrate processing apparatus.
Fig. 6 is a schematic diagram showing an example of a hardware configuration of the controller.
Fig. 7 (a) is a cross-sectional view showing an example of a film thickness profile in which the film thickness is relatively small at the center portion of the substrate, fig. 7 (b) is a cross-sectional view showing an example of a film thickness profile in which the film thickness is relatively large at the center portion of the substrate, and fig. 7 (c) is a cross-sectional view showing an example of a film thickness profile in which the film thickness is substantially uniform throughout the substrate.
Fig. 8 is a flowchart for explaining an example of a processing procedure of a substrate.
Fig. 9 is a diagram for explaining an example of a processing procedure of a substrate.
Fig. 10 is a diagram for explaining the subsequent process of fig. 9.
Fig. 11 is a view for explaining another example of the processing procedure of the substrate.
Fig. 12 is a view for explaining the subsequent step of fig. 11.
Fig. 13 is a side view schematically showing another example of the processing unit.
Detailed Description
In the following description, the same elements or elements having the same functions are denoted by the same reference numerals, and overlapping descriptions are omitted.
First, a substrate processing apparatus 1 configured to process a substrate W will be described with reference to fig. 1. The substrate processing apparatus 1 includes a carry-in/carry-out station 2, a processing station 3, and a controller Ctr (control unit). The carry-in/out station 2 and the processing station 3 may be aligned in a horizontal direction, for example.
The substrate W may have a disk shape or a plate shape other than a circle such as a polygon. The substrate W may have a cutout portion formed by cutting a part. The notch portion may be, for example, a notch (a groove having a U-shape, a V-shape, or the like), or may be a linear portion (a so-called orientation flat) extending in a linear manner. The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display: flat panel display) substrate, or other various substrates. The diameter of the substrate W may be, for example, about 200mm to 450 mm.
The carry-in/out station 2 includes a loading unit 4, a carry-in/out unit 5, and rack units 6. The mounting portion 4 includes a plurality of mounting tables (not shown) arranged in the width direction (up-down direction in fig. 1). Each mounting table is configured to be capable of mounting a carrier 7 (storage container). The carrier 7 is configured to house at least 1 substrate W in a sealed state. The carrier 7 includes an opening/closing door (not shown) for storing and taking out the substrates W.
The carry-in/out section 5 is disposed adjacent to the placement section 4 in the direction in which the carry-in/out station 2 and the processing station 3 are aligned (left-right direction in fig. 1). The carry-in/out section 5 includes an opening/closing door (not shown) provided in correspondence with the mounting section 4. When the carrier 7 is placed on the placement unit 4, the opening/closing door of the carrier 7 is opened together with the opening/closing door of the carry-in/out unit 5, and the inside of the carry-in/out unit 5 communicates with the inside of the carrier 7.
The loading/unloading section 5 incorporates a transport arm A1 and a rack unit 6. The transfer arm A1 is configured to be capable of horizontal movement in the width direction (up-down direction in fig. 1) of the carry-in/out section 5, up-down movement in the vertical direction, and pivoting operation about the vertical axis. The transfer arm A1 is configured to take out the substrate W from the carrier 7 and deliver the substrate W to the rack unit 6, and to receive the substrate W from the rack unit 6 and return the substrate W into the carrier 7. The rack unit 6 is located near the processing station 3, and is configured to transfer the substrate W between the carry-in/out section 5 and the processing station 3 in the middle.
The processing station 3 includes a conveying section 8 and a plurality of processing units 10. The carrying section 8 extends horizontally in the direction in which the carry-in/out station 2 and the processing station 3 are aligned (the left-right direction in fig. 1), for example. The conveying section 8 incorporates a conveying arm A2. The transfer arm A2 is configured such that the transfer arm A1 can perform horizontal movement in the longitudinal direction (left-right direction in fig. 1) of the transfer unit 8, vertical movement in the vertical direction, and pivoting movement about a vertical axis. The transfer arm A2 is configured to take out the substrate W from the rack unit 6 and deliver the substrate W to each processing unit 10, and to receive the substrate W from each processing unit 10 and return the substrate W into the rack unit 6.
The plurality of processing units 10 are arranged in a row along the longitudinal direction (left-right direction in fig. 1) of the conveying section 8 on each of the two sides of the conveying section 8. The processing unit 10 is configured to perform a predetermined process (for example, a cleaning process) on the substrate W. Details of the processing unit 10 will be described later.
The controller Ctr is configured to control the substrate processing apparatus 1 locally or entirely. Details of the controller Ctr are described later.
[ processing Unit ]
Next, the processing unit 10 will be described in detail with reference to fig. 2 to 4. The processing unit 10 includes a rotation holding unit 20, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a drive unit 50, an auxiliary supply unit 60, a measurement unit 70, and a drive unit 80.
The rotation holding portion 20 includes a rotation portion 21, a shaft 22, and a holding portion 23. The rotation unit 21 is configured to operate based on an operation signal from the controller Ctr to rotate the shaft 22. The rotating unit 21 may be a power source such as an electric motor, for example.
The holding portion 23 is provided at the front end portion of the shaft 22, and is, for example, disk-shaped. The holding portion 23 may be configured to hold the entire back surface of the substrate W by suction, for example. In this case, even if there is warpage or the like in the substrate W, the substrate W is corrected so as to be substantially horizontal along the surface of the holding portion 23. That is, the rotation holding portion 20 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to the surface of the substrate W in a state where the posture of the substrate W is substantially horizontal. As illustrated in fig. 2, the rotation holding portion 20 may rotate the substrate W counterclockwise when viewed from above.
The holding portion 23 incorporates a plurality of heating portions 24, 25. The heating portions 24 and 25 may be heat sources such as resistance heating heaters, for example. The heating portion 24 is located at the center of the holding portion 23. Therefore, the heating portion 24 is configured to heat the central portion of the substrate W in a state where the substrate W is held by the rotation holding portion 20. The heating portion 25 is annular so as to surround the heating portion 24, and is located at the outer peripheral portion of the holding portion 23. Therefore, the heating portion 25 is configured to heat the outer peripheral portion of the substrate W in a state where the substrate W is held by the rotation holding portion 20. In other words, the heating portions 24 and 25 are each configured to locally heat the substrate W.
The chemical supply unit 30 is configured to supply the etching liquid L1 to the substrate W. The etching liquid L1 is, for example, a chemical liquid for etching a film F (for example, a thin film such as a silicon oxide film) disposed on the surface Wa of the substrate W. The etching liquid L1 includes, for example, an alkaline chemical liquid, an acidic chemical liquid, and the like. The alkaline chemical solution includes, for example, SC-1 solution (a mixture of ammonia, hydrogen peroxide and pure water), hydrogen peroxide water, and the like. The acidic liquid medicine includes, for example, SC-2 solution (mixed solution of hydrochloric acid, hydrogen peroxide and pure water), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO 3 +HF solution (mixed solution of nitric acid and hydrofluoric acid), and the like.
The chemical liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, and a pipe 35. The liquid source 31 is a supply source of the etching liquid L1. The pump 32 is configured to operate based on an operation signal from the controller Ctr, and to send the etching liquid L1 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.
The valve 33 is configured to be operated based on an operation signal from the controller Ctr to switch between an open state in which the fluid flow in the pipe 35 is permitted and a closed state in which the fluid flow in the pipe 35 is blocked. The nozzle 34 is disposed above the substrate W with its ejection port facing the surface Wa of the substrate W. The nozzle 34 is configured to discharge the etching liquid L1 fed from the pump 32 from a discharge port. The piping 35 is connected to the liquid source 31, the pump 32, the valve 33, and the nozzle 34 in this order from the upstream side.
The rinse liquid supply unit 40 is configured to supply the rinse liquid L2 to the substrate W. The rinse liquid L2 is, for example, a rinse liquid for rinsing out components dissolved in the etching liquid L1 supplied to the surface Wa of the substrate W and the etching liquid L1 of the film F from the surface Wa. The rinse liquid L2 includes, for example, deionized water (DIW), and the like.
The rinse liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44, and a pipe 45. The liquid source 41 is a supply source of the rinse liquid L2. The pump 42 is configured to operate based on an operation signal from the controller Ctr, and to send the rinse liquid L2 sucked from the liquid source 41 to the nozzle 44 via the pipe 45 and the valve 43.
The valve 43 is configured to be operated based on an operation signal from the controller Ctr to switch between an open state in which the fluid flow through the pipe 45 is permitted and a closed state in which the fluid flow through the pipe 45 is blocked. The nozzle 44 is disposed above the substrate W such that the ejection port faces the surface Wa of the substrate W. The nozzle 44 is configured to discharge the rinse liquid L2 fed from the pump 42 from the discharge port. The piping 45 is connected to the liquid source 41, the pump 42, the valve 43, and the nozzle 44 in this order from the upstream side.
The drive unit 50 includes a holding portion 51 and a drive mechanism 52. The holding portion 51 is configured to hold the nozzles 34, 44. The driving mechanism 52 is configured to move the holding portion 51 in the horizontal direction and the up-down direction based on a signal from the controller Ctr. Accordingly, the nozzles 34 and 44 move in the horizontal direction and the vertical direction along with the movement of the holding portion 51.
The auxiliary supply unit 60 is configured to supply the rinse liquid L2 to the substrate W. The auxiliary supply unit 60 includes a liquid source 61, a pump 62, a valve 63, a nozzle 64, and a pipe 65. The liquid source 61 is a supply source of the rinse liquid L2. The pump 62 is configured to operate based on an operation signal from the controller Ctr, and to send the rinse liquid L2 sucked from the liquid source 61 to the nozzle 64 via the pipe 65 and the valve 63.
The valve 63 is configured to be operated based on an operation signal from the controller Ctr to switch between an open state in which the fluid flow in the pipe 65 is permitted and a closed state in which the fluid flow in the pipe 65 is blocked. The nozzle 64 is disposed above the substrate W such that the ejection port faces the surface Wa of the substrate W. The nozzle 64 is configured to discharge the rinse liquid L2 fed from the pump 62 from the discharge port. The piping 65 is connected to the liquid source 61, the pump 62, the valve 63, and the nozzle 64 in this order from the upstream side.
The measurement unit 70 is configured to measure the thickness of the film F (hereinafter, simply referred to as "film thickness") disposed on the surface Wa of the substrate W, and to send the measured value to the controller Ctr. The measuring unit 70 may be configured to measure the film thickness with reference to the surface Wa of the substrate W. The measurement unit 70 may be, for example, a film thickness measuring device using a spectroscopic interferometry. In this case, the measurement unit 70 may include, for example, an irradiation unit that irradiates light toward the surface Wa of the substrate W, and a light receiving unit that receives multiple reflected lights, which is a superposition of light reflected by the surface Wa of the substrate W and light reflected by the surface of the light film F emitted from the irradiation unit.
The measurement section 70 includes a measurement head 71 disposed in the vicinity of the surface Wa of the substrate W at the time of measurement of the film thickness. Therefore, during measurement of the film thickness, a gap G exists between the tip of the measurement head 71 and the surface Wa of the substrate W.
The driving unit 80 includes a holding portion 81 and a driving mechanism 82 (driving portion). The holding portion 81 is configured to hold the nozzle 64 and the measuring head 71. The nozzle 64 and the measuring head 71 may be adjacent to each other in a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81. As illustrated in fig. 2 to 4, in a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81, the tip (lower end) of the measuring head 71 may be positioned closer to the surface Wa of the substrate W than the lower end of the nozzle 64.
In a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81, the measuring head 71 may be located radially outward of the nozzle 64. The measuring head 71 may be positioned downstream of the nozzle 64 in the rotation direction of the substrate W in a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81. In a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81, the measuring head 71 may be positioned downstream of the nozzle 64 in a direction in which the rinse liquid L2 ejected from the nozzle 64 onto the rotating substrate W flows on the surface Wa (see fig. 3).
The driving mechanism 82 is configured to operate based on a signal from the controller Ctr to move the holding portion 81 in the horizontal direction and the up-down direction. Accordingly, the nozzle 64 and the measuring head 71 move in the horizontal direction and the up-down direction along with the movement of the holding portion 81.
[ details of the controller ]
As shown in fig. 5, the controller Ctr includes a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional blocks. The division of the functions of the controller Ctr into a plurality of blocks is merely for convenience, and does not necessarily mean that the hardware constituting the controller Ctr is divided into such blocks. The functional blocks are not limited to be realized by execution of the program, and may be realized by a dedicated circuit (for example, a logic circuit) or an integrated circuit (ASIC: application Specific Integrated Circuit: application specific integrated circuit) in which the dedicated circuit is integrated.
The reading section M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM has recorded thereon a program for operating each part of the substrate processing apparatus 1 including the processing unit 10. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, and an magneto-optical recording disk.
The storage unit M2 is configured to store various data. The storage unit M2 may store, for example, a program read from the recording medium RM in the reading unit M1, setting data input by an operator via an external input device (not shown), and the like. The storage unit M2 may store, for example, a measured value of the film thickness received from the measurement unit 70, a target value of the film thickness, a process condition for etching the film F, and the like.
The processing conditions may be constituted by a combination of a plurality of set values for operating the respective portions of the processing unit 10 during the etching process. The set values may include, for example, the position of the nozzle 34 with respect to the surface Wa of the substrate W, the discharge flow rate of the etching liquid L1, the discharge time of the etching liquid L1, the temperature of the etching liquid L1, the rotation speed of the substrate W, the temperatures of the heating portions 24, 25, and the like.
The storage unit M2 may store processing conditions corresponding to the film thickness profile in the surface of the substrate W, that is, the fluctuation of the film thickness in the surface of the substrate W, in advance. For example, the first processing condition including a combination of set values such that the etching rate of the outer peripheral portion of the substrate W is greater than the time rate of the central portion may be stored in the storage portion M2 in advance in correspondence with the first film thickness profile (see fig. 7 (a)) in which the film thickness at the central portion of the substrate W is smaller than the film thickness at the outer peripheral portion. For example, the second processing condition including a combination of set values such that the etching rate of the outer peripheral portion of the substrate W is smaller than the etching rate of the central portion may be stored in the storage portion M2 in correspondence with a second film thickness profile (see fig. 7 (b)) in which the film thickness at the central portion of the substrate W is larger than the film thickness at the outer peripheral portion. For example, the third processing conditions including a combination of set values for making the etching rate substantially uniform over the entire substrate W may be stored in the storage unit M2 in advance in correspondence with a third film thickness profile (see fig. 7 (c)) in which the film thickness is substantially uniform over the entire substrate W.
The processing unit M3 is configured to process various data. The processing unit M3 may generate signals for operating the respective units (for example, the rotating unit 21, the heating units 24, 25, the pumps 32, 42, 62, the valves 33, 43, 63, and the driving mechanisms 52, 82) of the substrate processing apparatus 1 based on various data stored in the storage unit M2, for example.
The instruction unit M4 is configured to transmit the operation signal generated in the processing unit M3 to each unit (for example, the rotating unit 21, the heating units 24 and 25, the pumps 32, 42 and 62, the valves 33, 43 and 63, and the driving mechanisms 52 and 82) of the substrate processing apparatus 1.
The hardware of the controller Ctr may be composed of, for example, 1 or more computers for control. As shown in fig. 6, the controller Ctr may include a circuit C1 as a structure on hardware. The circuit C1 may be constituted by a circuit element (circuit). The circuit C1 may include, for example, a processor C2, a memory C3, a storage device C4, a driver C5, and an input-output port C6.
The processor C2 may be configured to execute a program in cooperation with at least one of the memory C3 and the storage device C4, and to perform input/output of a signal via the input/output port C6, thereby realizing the above-described functional blocks. The memory C3 and the storage device C4 can function as the storage unit M2. The driver C5 may be a circuit configured to drive each of the substrate processing apparatus 1. The input/output port C6 may be configured to input/output signals between the driver C5 and each part of the substrate processing apparatus 1.
The substrate processing apparatus 1 may include 1 controller Ctr or a controller group (control unit) including a plurality of controllers Ctr. In the case where the substrate processing apparatus 1 includes a controller group, the above-described functional blocks may be realized by 1 controller Ctr or by a combination of 2 or more controllers Ctr, respectively. In the case where the controller Ctr is configured by a plurality of computers (circuit C1), the above-described functional blocks may be realized by 1 computer (circuit C1) or by a combination of 2 or more computers (circuit C1), respectively. The controller Ctr may have a plurality of processors C2. In this case, the above-described functional blocks may be realized by one processor C2, or may be realized by a combination of 2 or more processors C2.
[ method of treating substrate ]
Next, a substrate processing method including etching processing and film thickness measurement processing of the film F will be described with reference to fig. 8 to 10. Before the start of the method, the carrier 7 is placed on the stage of the placement unit 4 in advance. At least 1 substrate W having a film F formed on the surface Wa is accommodated in the carrier 7.
First, the controller Ctr controls the transfer arms A1 and A2 to take out 1 substrate W from the carrier 7 and transfer the substrates W into an arbitrary processing unit 10. The substrate W carried into the processing unit 10 is placed on the holding portion 23.
Next, the controller Ctr controls the rotating unit 21 and the holding unit 23 (rotating holding unit 20), and the back surface of the substrate W is sucked and held by the holding unit 23 to rotate the substrate W. In this state, as illustrated in fig. 3, 4, and 9 (a), the controller Ctr controls the pumps 42 and 62 and the valves 43 and 63 (the rinse liquid supply unit 40 and the auxiliary supply unit 60) to supply the rinse liquid L2 to the surface Wa of the substrate W and the gap G, respectively.
The rinse liquid L2 discharged from the nozzle 44 may be supplied toward the substantially central portion of the surface Wa of the substrate W. In this case, the rinse liquid L2 discharged from the nozzle 44 flows through the entire surface Wa from the center portion of the substrate W toward the peripheral edge by the rotation of the substrate W, and is then thrown outward. Therefore, a thin film R1 of the rinse liquid L2 is formed on the entire surface Wa of the substrate W (see fig. 4 and 9 (a)). Thus, the occurrence of a dry region on the surface Wa of the substrate W is suppressed. The thickness of the thin film R1 formed on the surface Wa of the substrate W by the rinse liquid L2 discharged from the nozzle 44 may be, for example, about 0.1mm to 0.4 mm.
On the other hand, the rinse liquid L2 supplied from the nozzle 64 to the gap G flows from the landing position on the surface Wa of the substrate W toward the peripheral edge of the substrate W by the rotation of the substrate W, and is then thrown outward. Therefore, a thick film R2 of the rinse liquid L2 is formed in the vicinity of the gap G (see fig. 4 and 9 (a)). The thickness of the thick film R2 may be, for example, about 1mm to 3 mm. During measurement of the film thickness, the tip of the measurement head 71 is maintained in a state of being always positioned in the thick film R2 (a state of being always immersed in the rinse liquid L2) (see fig. 3, 4, and (a) of fig. 9).
Next, during the rotation of the substrate W and during the supply of the rinse liquid L2 from the nozzles 44, 64 to the substrate W, the controller Ctr controls the driving mechanism 82 to move the measuring head 71 (the holding portion 81) in the substantially horizontal direction along the surface Wa of the substrate W. Thus, the film thickness of the film F in the surface of the substrate W is measured by the measuring unit 70, and the measured value is stored in the storage unit M2 (see step S1 in fig. 8 and (a) in fig. 9). At this time, the instruction unit M4 may perform a process of controlling the driving mechanism 82 to move the measuring head 71 (the holding unit 81) in the substantially horizontal direction along the radial direction of the substrate W. The instruction unit M4 may perform a process of controlling the driving mechanism 82 to move the measuring head 71 (the holding unit 81) from the center portion toward the peripheral edge of the substrate W. The instruction unit M4 may also perform a process of controlling the driving mechanism 82 to move the measuring head 71 (the holding unit 81) from the peripheral edge of the substrate W toward the central portion.
Next, the controller Ctr selects one process condition from the plurality of process conditions stored in the storage unit M2 based on the measured value of the film thickness measured in step S1 (see step S2 of fig. 8). In this case, the processing conditions suitable for etching the film F are selected based on the measured value of the film thickness before etching. Therefore, for example, even when the film thickness before etching varies in the plane of the substrate W, the film thickness after etching can be made nearly uniform.
The controller Ctr may select a process condition that the thickness of the film F after the etching process is equal to or less than a predetermined target value and the entire film is nearly flat, based on the measurement value in step S1. For example, when the measured value measured in step S1 shows the first film thickness profile (see fig. 7 (a)), the controller Ctr may select the first processing condition from the memory M2. When the measured value measured in step S1 shows the second film thickness profile (see fig. 7 (b)), the controller Ctr may select the second processing condition from the memory M2. When the measured value measured in step S1 shows the third film thickness profile (see fig. 7 (c)), the controller Ctr may select the third processing condition from the memory M2.
Next, the controller Ctr controls the spin holding unit 20 based on the processing conditions selected in step S2 to rotate the substrate W suctioned and held by the holding unit 23 at a predetermined rotation speed. In this state, the controller Ctr controls the pump 32 and the valve 33 (chemical supply unit 30) based on the processing conditions selected in step S2 to supply the etching liquid L1 to the surface Wa of the substrate W at a predetermined discharge flow rate, discharge time, and temperature (see step S3 of fig. 8 and (b) of fig. 9). Further, the supply of the etching liquid L1 may be started in a state where the rinse liquid L2 supplied through step S1 covers the surface Wa of the substrate W, so as to suppress the occurrence of a dry area on the surface Wa of the substrate W. Therefore, the supply of the rinse liquid L2 from the nozzles 44 and 64 can be stopped after the start of the supply of the etching liquid L1.
The controller Ctr may set the other parts of the processing unit 10 using a plurality of set values included in the processing conditions selected in step S2. For example, when the first processing condition is selected, the controller Ctr may control the heating units 24 and 25 such that the temperature of the heating unit 25 is higher than the temperature of the heating unit 24. In this case, the etching rate at the outer peripheral portion of the substrate W is higher than that at the central portion, and thus the film F at the outer peripheral portion of the substrate W is more easily etched. When the second processing condition is selected, the controller Ctr may control the heating units 24 and 25 such that the temperature of the heating unit 24 is higher than the temperature of the heating unit 25. In this case, the etching rate at the central portion of the substrate W is higher than the etching rate at the outer peripheral portion, and thus the film F at the central portion of the substrate W is more easily etched.
The etching liquid L1 discharged from the nozzle 34 may be supplied toward a substantially central portion of the surface Wa of the substrate W. In this case, the etching liquid L1 discharged from the nozzle 34 flows through the entire surface Wa from the center portion of the substrate W toward the peripheral edge by the rotation of the substrate W, and is then thrown outward. Therefore, a thin film R3 of the etching liquid L1 is formed on the entire surface Wa of the substrate W (see fig. 9 (b)). Thus, the occurrence of a dry region on the surface Wa of the substrate W is suppressed.
Next, as in step S1, the controller Ctr controls the respective units of the processing unit 10 to measure the film thickness of the film F in the surface of the substrate W by the measurement unit 70 (see step S4 in fig. 8, fig. 3, fig. 4, and fig. 10 (a)). Further, the supply of the rinse liquid L2 from the nozzles 44, 64 may be started in a state where the etching liquid L1 supplied through step S3 covers the surface Wa of the substrate W, so as to suppress the occurrence of a dry area on the surface Wa of the substrate W. Therefore, the supply of the etching liquid L1 can be stopped after the supply of the rinse liquid L2 from the nozzles 44 and 64 is started.
Next, the controller Ctr updates the process conditions based on the measured value of the film thickness measured in step S4, and causes the storage unit M2 to store the updated process conditions (see step S5 of fig. 8). For example, when the measured value shows the first film thickness profile (see fig. 7 (a)), at least one set value among the plurality of set values included in the process condition may be updated so that the etching rate at the outer peripheral portion of the substrate W is higher than the etching rate at the central portion. In this case, since the etching process condition is updated based on the measured value of the film thickness after etching, the etching process can be feedback-controlled. When the measured value shows the second film thickness profile (see fig. 7 (b)), at least one set value among the plurality of set values included in the process condition may be updated so that the etching rate at the center portion of the substrate W is higher than the etching rate at the outer peripheral portion.
Next, the controller Ctr determines whether or not the measured value of the film thickness measured in step S4 is equal to or less than a predetermined target value (see step S6 of fig. 8). When the measured value of the film thickness measured in step S4 is equal to or less than the predetermined target value (yes in step S6 of fig. 8), the controller Ctr controls the rotation holding unit 20 to rotate the substrate W suctioned and held by the holding unit 23 at a predetermined rotation speed for a predetermined time. Thereby, the rinse liquid L2 is thrown out from the surface Wa of the substrate W, and the substrate W is dried (see step S7 of fig. 8 and (b) of fig. 10). Then, the controller Ctr controls the transfer arms A1 and A2 to transfer the dried substrate W and return the substrate W to the carrier 7.
On the other hand, when the measured value of the film thickness measured in step S4 exceeds the predetermined target value (no in step S6 of fig. 8), the controller Ctr corrects the processing conditions used in step S3 (see step S9 of fig. 8). That is, the controller Ctr corrects at least one set value among the plurality of set values included in the process conditions so that the process conditions can obtain a larger etching rate.
Next, the controller Ctr controls the spin holding unit 20 based on the processing conditions corrected in step S4, and rotates the substrate W suctioned and held by the holding unit 23 at a predetermined rotation speed. In this state, the controller Ctr controls the chemical supply unit 30 based on the processing conditions corrected in step S4 to supply the etching liquid L1 to the surface Wa of the substrate W at a predetermined discharge flow rate, discharge time, and temperature (see step S10 in fig. 8). Thereby, at least a portion of the film F in the surface of the substrate W having a film thickness exceeding a predetermined target value is etched again. In this case, even if the film thickness after etching exceeds a predetermined target value, the same substrate W can be used effectively without discarding the substrate W or the like by performing the etching process again.
In addition, when the film thickness of a part of the film F after etching exceeds a predetermined target value, the processing condition may be corrected so that the part is mainly etched in step S9. In this case, in step S10, the film F is re-etched using the corrected processing conditions, whereby the film thickness after the re-etching processing can be made nearly uniform.
Thereafter, the steps after step S4 are repeatedly performed until the film thickness becomes equal to or less than a predetermined target value. Further, the supply of the etching liquid L1 may be started in a state where the rinse liquid L2 supplied through step S4 covers the surface Wa of the substrate W to suppress the occurrence of a dry area on the surface Wa of the substrate W. Therefore, the supply of the rinse liquid L2 from the nozzles 44 and 64 can be stopped after the start of the supply of the etching liquid L1. The controller Ctr may further update the processing conditions updated in step S5 using the corrected processing conditions.
When the drying of the substrate W is completed in step S7, the controller Ctr determines whether or not there is a substrate W to be processed subsequently (see step S8 of fig. 8). When there is no substrate W to be processed (yes in step S8 in fig. 8), that is, when all of the substrates W stored in the carrier 7 are processed, the substrate processing is completed.
On the other hand, when there is a substrate W to be processed later (no in step S8 of fig. 8), that is, when an unprocessed substrate W is stored in the carrier 7, the controller Ctr controls the transfer arms A1 and A2 to take out 1 unprocessed substrate W from the carrier 7 and place the substrate W on the holding portion 23. Thereafter, as illustrated in fig. 8, the steps after step S2 may be performed on the substrate W. At this time, in step S2, the processing conditions updated in step S5 may be used. Since the film thickness profile of the film F formed on the surface Wa tends to be similar in the same lot (lot) of substrates, the etching process of the unprocessed substrate W can be efficiently performed by omitting the step S1 by using the updated process conditions.
[ Effect ]
According to the above example, the state in which the measuring head 71 is immersed in the rinse liquid L2 is maintained while the film thickness is measured by the measuring unit 70. Therefore, the film thickness is not affected by the surface fluctuation of the rinse liquid L2 during the film thickness measurement. Thus, the thickness of the film F formed on the surface of the substrate W can be measured with high accuracy. In addition, when the film thickness is measured by the measuring unit 70, the etching liquid L1 does not adhere to the measuring unit 70. Therefore, since the chemical resistance of the measuring section 70 is not required to be considered, the cost of the measuring section 70 can be suppressed, and the film thickness can be measured in substantially the same environment regardless of the etching liquid L1.
According to the above example, a liquid film of the rinse liquid L2 is formed on the entire surface Wa of the substrate W while the film thickness is measured by the measuring unit 70. Therefore, the rinse liquid L2 suppresses drying of the surface Wa of the substrate W, and therefore particles and the like are less likely to adhere to the surface Wa of the substrate W. Thus, the quality of the surface treatment of the substrate W can be improved.
According to the above example, the holding portion 23 is configured to adsorb the entire back surface of the substrate W. Therefore, even if there is warpage of the substrate W, the substrate W is entirely adsorbed to the holding portion 23, whereby the surface Wa of the substrate W is held substantially horizontally. Thus, the film thickness can be measured with higher accuracy.
According to the above example, the measurement unit 70 is configured to measure the thickness of the film F with reference to the surface Wa of the substrate W. Therefore, even if there is a variation in the thickness of the substrate W in the plane of the substrate W, the film thickness is measured without the influence of the variation. Thus, the film thickness can be measured with higher accuracy.
According to the above example, the heating portions 24 and 25 are configured to locally heat the substrate W. Therefore, the heating portions 24 and 25 operate during the etching process, so that the etching progress speed of the locally heated region and the region other than the locally heated region in the substrate W is changed. Therefore, when the thickness of the film F formed on the substrate W is not uniform, the heating portions 24 and 25 locally heat the region of the substrate W having a large film thickness, thereby making the etched film thickness nearly uniform.
Modification example
It is intended that all matter disclosed in this specification be interpreted as illustrative and not in a limiting sense. Various omissions, substitutions, changes, and the like may be made to the above examples without departing from the spirit of the claims.
(1) In the above example, the film thickness is measured by the measuring unit 70 while the rinse liquid L2 is supplied to the substrate W, that is, while the progress of the etching process of the film F is suppressed by the rinse liquid L2. However, the film thickness may be measured by the measuring unit 70 during the progress of the etching process of the film F. In this case, first, the controller Ctr controls the spin holding unit 20 and the chemical supply unit 30 based on predetermined processing conditions to supply the etching liquid L1 to the surface Wa of the substrate W while the substrate W is being rotated. (see fig. 11 (a)).
When the etching process advances to some extent, the discharge of the etching liquid L1 from the nozzle 34 is continued, and the controller Ctr controls the auxiliary supply unit 60 to supply the etching liquid L1 to the gap G (see fig. 11 (b)). That is, in this example, the etching liquid L1 is stored in the liquid source 61 of the auxiliary supply unit 60. While the etching liquid L1 is supplied to the surface Wa of the substrate W and the gap G, the controller Ctr controls the driving mechanism 82 to move the measuring head 71 (the holding portion 81) in a substantially horizontal direction along the surface Wa of the substrate W (see fig. 11 (b)). Thus, the film thickness of the film F during the etching process is measured by the measuring unit 70, and the measured value is stored in the storage unit M2.
Thereafter, film thickness measurement during etching is repeated as necessary until the measured film thickness becomes equal to or less than a predetermined target value. When the measured film thickness is equal to or less than the predetermined target value, the controller Ctr controls the spin holding unit 20 and the rinse liquid supply unit 40 to supply the rinse liquid L2 to the surface Wa of the rotating substrate W (see fig. 12 (a)). Thereby, the etching liquid L1 is rinsed from the surface Wa of the substrate W by the rinse liquid L2. Next, the substrate W is dried in the same manner as in step S7, and the substrate processing is completed (see fig. 12 (b)).
(2) As illustrated in fig. 13, the processing unit 10 may further include a chemical supply unit 90 (other chemical supply unit), and the chemical supply unit 90 may be configured to supply the etching liquid L1 to the substrate W. In this case, the etching progress rate of the film F is different between the region of the substrate W to which the etching liquid is supplied from the chemical liquid supply unit 30 and the region of the substrate W to which the etching liquid L1 is supplied from the chemical liquid supply unit 90. Therefore, when the film thickness on the surface of the substrate W varies (when the film thickness in the surface of the substrate W is uneven), the etching liquid L1 can be supplied from the chemical liquid supply unit 90 to the surface Wa of the substrate W in addition to the chemical liquid supply unit 30, thereby making the etched film thickness nearly uniform.
In the example of fig. 13, when the first processing condition is selected in step S2, the controller Ctr may control the chemical supply units 30 and 90 so that the discharge flow rate, discharge time, temperature, etc. of the etching liquid L1 in the chemical supply unit 90 are larger than the discharge flow rate, discharge time, temperature, etc. of the etching liquid L1 in the chemical supply unit 30. In this case, the etching rate at the outer peripheral portion of the substrate W is higher than that at the central portion, and thus the film F at the outer peripheral portion of the substrate W is more easily etched. On the other hand, when the second processing condition is selected in step S2, the controller Ctr may control the chemical supply unit 30, 90 such that the discharge flow rate, discharge time, temperature, etc. of the etching liquid L1 in the chemical supply unit 30 are larger than the discharge flow rate, discharge time, temperature, etc. of the etching liquid L1 in the chemical supply unit 90. In this case, the etching rate at the central portion of the substrate W is higher than the etching rate at the outer peripheral portion, and thus the film F at the central portion of the substrate W is more easily etched.
(3) In the above example, the nozzles 34 and 44 are held by the holding portion 51, and are configured to move with the holding portion 51. However, the nozzles 34 and 44 may be connected to different driving mechanisms and may be configured to move independently. Similarly, the nozzle 64 and the measuring unit 70 may be connected to different driving mechanisms, and may be configured to move independently.
(4) In the above example, the nozzles 34, 44, and 64 and the measuring unit 70 are configured to horizontally move with respect to the surface Wa of the substrate W. However, the substrate W may be horizontally moved with respect to the nozzles 34, 44, 64 and the measuring section 70, or both the nozzles 34, 44, 64 and the measuring section 70 and the substrate W may be horizontally moved.
[ other examples ]
Example 1. An example of the substrate processing apparatus includes: a rotation holding unit configured to hold a substrate having a film formed on a surface thereof and rotate the substrate; a chemical liquid supply unit configured to supply an etching liquid to the surface of the substrate while the substrate is rotated by the rotation holding unit; a rinse liquid supply unit configured to supply a rinse liquid to the surface of the substrate while the spin holding unit rotates the substrate; a measurement unit configured to measure the thickness of the film in a state where the measurement head is located in the vicinity of the surface of the substrate; a driving unit configured to move the measuring head relative to the surface of the substrate in a horizontal direction during measurement by the measuring unit; and an auxiliary supply unit configured to supply a rinse liquid to the gap between the measurement head and the surface of the substrate during measurement by the measurement unit, so that the gap is filled with the rinse liquid. In this case, the state in which the measuring head is immersed in the rinse liquid is maintained while the measuring section measures the film thickness. Therefore, the film thickness is not affected by the surface fluctuation of the rinse liquid during the film thickness measurement. Thus, the thickness of the film formed on the surface of the substrate can be measured with high accuracy. In addition, when the film thickness is measured by the measuring section, the etching liquid does not adhere to the measuring section. Therefore, the cost of the measuring section can be suppressed without considering the chemical resistance of the measuring section, and the film thickness can be measured in substantially the same environment regardless of the etching liquid.
In example 2, in the apparatus of example 1, the rinse liquid supply unit may be configured to form a liquid film of the rinse liquid on the entire surface of the substrate during the measurement by the measurement unit. In this case, since the rinse liquid suppresses drying of the surface of the substrate, particles and the like are less likely to adhere to the surface of the substrate. Thus, the quality of the surface treatment of the substrate can be improved.
In example 3, in the apparatus of example 1 or example 2, the rotation holding portion may include a holding portion configured to adsorb the entire back surface of the substrate. In this case, even if there is warpage of the substrate, the substrate is entirely adsorbed to the holding portion, whereby the surface of the substrate is held substantially horizontally. Therefore, the film thickness can be measured with higher accuracy.
In example 4, in the apparatus according to any one of examples 1 to 3, the measurement unit may be configured to measure the thickness of the film with reference to the surface of the substrate. In this case, even if there is a variation in the thickness of the substrate within the surface of the substrate, the film thickness is measured without the influence of the variation. Therefore, the film thickness can be measured with higher accuracy.
In example 5, the apparatus according to any one of examples 1 to 4 may further include a heating unit configured to locally heat the substrate. In this case, the heating portion operates during the etching process, so that the etching progress speed of the locally heated region and the region other than the locally heated region in the substrate is changed. Therefore, when the thickness of the film formed on the substrate is not uniform, the film thickness after etching can be made nearly uniform by locally heating the region of the substrate where the film thickness is large by the heating section.
In example 6, the apparatus according to any one of examples 1 to 5 may further include another chemical liquid supply portion configured to supply the etching liquid to a region other than the center portion of the surface of the substrate during rotation of the substrate by the rotation holding portion, and the chemical liquid supply portion may be configured to supply the etching liquid to the center portion of the surface of the substrate during rotation of the substrate by the rotation holding portion. In this case, the progress rate of etching of the film is different between the region of the substrate to which the etching liquid is supplied from the chemical liquid supply unit and the region of the substrate to which the etching liquid is supplied from the other chemical liquid supply unit. Therefore, when the thickness of the film on the surface of the substrate varies, the etching liquid can be supplied from the other chemical liquid supply unit to the surface of the substrate, thereby making the film thickness after etching nearly uniform.
In example 7, the apparatus according to any one of examples 1 to 6 may further include a control unit configured to execute: a first process of controlling the spin holding unit to hold the substrate and rotate the substrate, and controlling the chemical liquid supply unit to supply an etching liquid to the surface of the substrate, and etching the film based on predetermined processing conditions; a second process of controlling the rinse liquid supply unit and the auxiliary supply unit to supply the rinse liquid to the surface and the gap of the substrate, respectively, while controlling the spin holding unit to hold the substrate and spin the substrate after the first process; a third process of controlling the drive unit to move the measuring head relative to the surface of the substrate in the horizontal direction and controlling the measuring unit to measure the thickness of the film while controlling the drive unit during the supply of the rinse liquid and the rotation of the substrate in the second process; and a fourth process of updating the process conditions based on the measured value of the film thickness. In this case, since the etching process condition is updated based on the measured value of the film thickness after etching, the etching process can be feedback-controlled.
In example 8, the control unit may be configured to further execute a fifth process of controlling the chemical liquid supply unit to supply the etching liquid to the surface of the subsequent substrate while controlling the rotation holding unit to hold the subsequent substrate having the other film formed on the surface thereof and rotating the subsequent substrate, and etching the other film based on the processing conditions updated in the fourth process. In addition, the substrates in the same batch tend to have similar conditions of variation in the thickness of the film formed on the surface (film thickness profile). Therefore, according to example 8, the updated processing conditions are used when the same lot of substrates are processed, and thus, the measurement of the film thickness of the subsequent substrates before the etching process can be omitted. Thus, the subsequent etching process of the substrate can be efficiently performed.
In example 9, in the apparatus according to example 7 or example 8, the control unit may be configured to further execute: a sixth step of determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value; and a seventh process of etching the film by controlling the chemical liquid supply unit to supply the etching liquid to the surface of the substrate while controlling the rotation holding unit again to hold the substrate and rotate the substrate when it is determined that the measured value of the film thickness exceeds the target value. In this case, since the etching process is performed again on the same substrate, the film can be etched so that the film thickness becomes equal to or less than a predetermined target value. Therefore, even if the film thickness after etching exceeds a predetermined target value, the substrate on which the film is formed can be effectively used without discarding the substrate or the like.
In example 10, in the apparatus of example 9, the seventh process may include: when it is determined that the measured value of the thickness of a part of the film exceeds the target value, the rotation holding unit is controlled to hold the substrate and rotate the substrate, and the chemical liquid supply unit is controlled to supply the etching liquid to the surface of the substrate, thereby etching the part of the film. In this case, the etching is mainly performed on a portion of the film where the film thickness exceeds the target value. Therefore, the film thickness of the same substrate after the etching treatment again can be made nearly uniform.
Example 11 the apparatus according to any one of examples 7 to 10 may further include: a control unit; and a storage section configured to store a plurality of processing conditions for etching of the film, wherein the control section is configured to further execute: an eighth process of controlling the rinse liquid supply unit and the auxiliary supply unit to supply the rinse liquid to the surface and the gap of the substrate while controlling the spin holding unit to hold the substrate and spin the substrate; a ninth process of controlling the measuring section to measure the thickness of the film while controlling the driving section to move the measuring head relative to the surface of the substrate in the horizontal direction during the supply of the rinse liquid and during the rotation of the substrate in the eighth process; tenth processing of determining one processing condition from a plurality of processing conditions based on the measured value of the film thickness; and an eleventh process of controlling the liquid chemical supply unit to supply the etching liquid to the surface of the substrate while controlling the rotation holding unit to hold the substrate and rotate the substrate, and etching the film based on the one process condition determined in the tenth process. In this case, the processing conditions suitable for etching the film are selected based on the measured value of the film thickness before etching. Therefore, for example, even when the film thickness before etching varies in the plane of the substrate, the film thickness after etching can be made nearly uniform.
Example 12. An example of the substrate processing method includes the steps of: a first step of supplying an etching liquid to a surface of a substrate having a film formed on the surface thereof while rotating the substrate, and etching the film based on predetermined processing conditions; a second step of disposing the measuring head near the surface of the substrate; a third step of supplying a rinse solution to the surface of the substrate and to the gap between the measuring head and the surface of the substrate while rotating the substrate; and a fourth step of measuring the thickness of the film while relatively moving the measuring head in the horizontal direction with respect to the surface of the substrate during the supply of the rinse liquid and the rotation of the substrate in the third step. In this case, the same operational effects as those of the apparatus of example 1 can be obtained.
Example 13. In the method of example 12, the second step may include: the rinse liquid is supplied to the surface of the substrate to form a liquid film of the rinse liquid on the entire surface of the substrate. In this case, the same operational effects as those of the apparatus of example 2 can be obtained.
Example 14. In the method of example 12 or example 13, the fourth step may include: the thickness of the film was measured by the measuring unit in a state where the entire back surface of the substrate was adsorbed. In this case, the same operational effects as those of the apparatus of example 3 can be obtained.
In example 15, in the method according to any one of examples 12 to 14, the fourth step may include: the thickness of the film is measured by a measuring unit based on the surface of the substrate. In this case, the same operational effects as those of the apparatus of example 4 can be obtained.
Example 16. In the method of any one of examples 12 to 15, the first step may include: the film is etched in a state where the substrate is locally heated. In this case, the same operational effects as those of the apparatus of example 5 can be obtained.
In example 17, in the method according to any one of examples 12 to 16, the first step may include: etching solutions are supplied to the center portion of the surface of the substrate and the regions other than the center portion of the surface of the substrate, respectively. In this case, the same operational effects as those of the apparatus of example 6 can be obtained.
In example 18, the method according to any one of examples 12 to 17 may further include a fifth step of updating the processing conditions based on the measured value obtained by measuring the thickness of the film etched in the first step in the fourth step. In this case, the same operational effects as those of the apparatus of example 7 can be obtained.
In example 19, the method of example 18 may further include a sixth step of supplying an etching solution to the surface of the subsequent substrate while rotating the subsequent substrate having the other film formed on the surface, and etching the other film based on the processing conditions updated in the fifth step. In this case, the same operational effects as those of the apparatus of example 8 can be obtained.
Example 20 the method of example 18 or example 19 may further comprise the steps of: a seventh step of determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value; and an eighth step of, when it is determined that the measured value of the film thickness exceeds the target value, etching the film by supplying an etching liquid to the surface of the substrate while rotating the substrate again. In this case, the same operational effects as those of the apparatus of example 9 can be obtained.
In example 21, in the method of example 20, the eighth step may include: when it is determined that the measured value of the thickness of a part of the film exceeds the target value, an etching solution is supplied to the surface of the substrate while rotating the substrate, and a part of the film is etched. In this case, the same operational effects as those of the apparatus of example 10 can be obtained.
In example 22, the method according to any one of examples 12 to 21 may further include a ninth step of determining one processing condition from a plurality of processing conditions for etching the film based on a measured value obtained by measuring a thickness of the film before etching in the fourth step, the first step including: the etching solution is supplied to the surface of the substrate while rotating the substrate, and the film is etched based on one of the processing conditions determined in the ninth step. In this case, the same operational effects as those of the apparatus of example 11 can be obtained.
Example 23 an example of the computer-readable recording medium may be recorded with a program for causing the substrate processing apparatus to execute the method of any one of examples 12 to 22. In this case, the same operational effects as those of the apparatus of example 1 can be obtained. In this specification, a computer-readable recording medium may include a non-transitory tangible medium (non-transitory computer recording medium: a non-transitory computer recording medium) (e.g., various primary or secondary storage devices) or a propagated signal (transitory computer recording medium: a transitory computer recording medium) (e.g., a data signal capable of being provided via a network).
Description of the reference numerals
1: a substrate processing apparatus; 10: a processing unit; 20: a rotation holding section; 21: a rotating part; 23: a holding section; 24. 25: a heating section; 30: a chemical liquid supply unit; 40: a rinse liquid supply unit; 50: a driving unit; 60: an auxiliary supply unit; 70: a measuring unit; 71: a measuring head; 80: a driving unit; 82: a driving mechanism (driving unit); 90: a chemical liquid supply unit (other chemical liquid supply unit); ctr: a controller (control unit); f: films (other films); g: a gap; l1: an etching solution; l2: flushing liquid; m2: a storage unit; RM: a recording medium; w: a substrate (subsequent substrate); wa: a surface.

Claims (23)

1. A substrate processing apparatus is provided with:
a rotation holding unit configured to hold a substrate having a film formed on a surface thereof and rotate the substrate;
a chemical liquid supply unit configured to supply an etching liquid to a surface of the substrate while the substrate is rotated by the rotation holding unit;
a rinse liquid supply unit configured to supply a rinse liquid to a surface of the substrate while the spin holding unit rotates the substrate;
a measurement unit configured to measure a thickness of the film in a state where a measurement head is located in the vicinity of a surface of the substrate;
a drive unit configured to move the measuring head relative to the surface of the substrate in a horizontal direction during measurement by the measuring unit; and
and an auxiliary supply unit configured to supply a rinse liquid to a gap between the measurement head and the surface of the substrate during measurement by the measurement unit, and fill the gap with the rinse liquid.
2. The substrate processing apparatus according to claim 1, wherein,
the rinse liquid supply unit is configured to form a liquid film of the rinse liquid on the entire surface of the substrate during the measurement by the measurement unit.
3. The substrate processing apparatus according to claim 1 or 2, wherein,
The rotation holding portion includes a holding portion configured to adsorb the entire back surface of the substrate.
4. The substrate processing apparatus according to any one of claim 1 to 3, wherein,
the measuring unit is configured to measure the thickness of the film with reference to the surface of the substrate.
5. The substrate processing apparatus according to any one of claims 1 to 4, wherein,
the substrate heating device is also provided with a heating part which is configured to locally heat the substrate.
6. The substrate processing apparatus according to any one of claims 1 to 5, wherein,
further comprising another chemical liquid supply unit configured to supply an etching liquid to a region other than the center portion of the surface of the substrate during rotation of the substrate by the rotation holding unit,
the chemical liquid supply unit is configured to supply an etching liquid to a center portion of a surface of the substrate while the substrate is rotated by the rotation holding unit.
7. The substrate processing apparatus according to any one of claims 1 to 6, wherein,
also comprises a control part, wherein the control part is provided with a control part,
the control unit is configured to execute:
a first process of controlling the liquid chemical supply unit to supply an etching liquid to a surface of the substrate while controlling the rotation holding unit to hold the substrate and rotate the substrate, and etching the film based on predetermined process conditions;
A second process of controlling the rinse liquid supply unit and the auxiliary supply unit to supply rinse liquid to the surface of the substrate and the gap, respectively, while controlling the spin holding unit to hold the substrate and spin the substrate after the first process;
a third process of controlling the drive unit to measure the thickness of the film while controlling the measurement unit to move the measurement head horizontally relative to the surface of the substrate during the supply of the rinse liquid and the rotation of the substrate in the second process; and
and a fourth process of updating the process condition based on the measured value of the film thickness.
8. The substrate processing apparatus according to claim 7, wherein,
the control unit is configured to further perform a fifth process of controlling the chemical liquid supply unit to supply an etching liquid to the surface of the subsequent substrate while controlling the rotation holding unit to hold the subsequent substrate having the other film formed on the surface thereof and rotating the subsequent substrate, and etching the other film based on the processing conditions updated in the fourth process.
9. The substrate processing apparatus according to claim 7 or 8, wherein,
the control unit is configured to further execute:
a sixth step of determining whether or not a measured value of the film thickness is equal to or less than a predetermined target value; and
a seventh process of, when it is determined that the measured value of the film thickness exceeds the target value, controlling the chemical liquid supply unit to supply an etching liquid to the surface of the substrate to etch the film while controlling the rotation holding unit again to hold the substrate and rotate the substrate.
10. The substrate processing apparatus according to claim 9, wherein,
the seventh process includes: when it is determined that the measured value of the thickness of a part of the film exceeds the target value, the rotation holding unit is controlled to hold the substrate and rotate the substrate, and the chemical liquid supply unit is controlled to supply an etching liquid to the surface of the substrate, thereby etching the part of the film.
11. The substrate processing apparatus according to any one of claims 7 to 10, further comprising:
a control unit; and
a storage unit configured to store a plurality of processing conditions for etching the film,
Wherein the control section is configured to further perform the following processing:
an eighth process of controlling the rinse liquid supply unit and the auxiliary supply unit to supply rinse liquid to the surface of the substrate and the gap, respectively, while controlling the spin holding unit to hold the substrate and spin the substrate;
a ninth process of controlling the drive unit to measure the thickness of the film while controlling the measurement unit to move the measurement head horizontally relative to the surface of the substrate during the supply of the rinse liquid and the rotation of the substrate in the eighth process;
a tenth process of determining one process condition from the plurality of process conditions based on the measured value of the film thickness; and
an eleventh process of controlling the chemical supply unit to supply an etching liquid to the surface of the substrate while controlling the rotation holding unit to hold the substrate and rotate the substrate, and etching the film based on the one process condition determined in the tenth process.
12. A substrate processing method comprising the steps of:
a first step of supplying an etching liquid to a surface of a substrate having a film formed on the surface thereof while rotating the substrate, and etching the film based on predetermined processing conditions;
A second step of disposing a measuring head of a measuring section near the surface of the substrate;
a third step of supplying a rinse liquid to the surface of the substrate and to gaps between the measuring head and the surface of the substrate while rotating the substrate; and
and a fourth step of measuring the thickness of the film while moving the measuring head horizontally relative to the surface of the substrate during the supply of the rinse liquid and the rotation of the substrate in the third step.
13. The method for processing a substrate according to claim 12, wherein,
the second process includes: and supplying a rinse solution to the surface of the substrate to form a liquid film of the rinse solution on the entire surface of the substrate.
14. The method for processing a substrate according to claim 12 or 13, wherein,
the fourth process includes: the thickness of the film is measured by the measuring section while the entire back surface of the substrate is adsorbed.
15. The method for treating a substrate according to any one of claims 12 to 14, wherein,
the fourth process includes: the thickness of the film is measured by the measuring section based on the surface of the substrate.
16. The method for treating a substrate according to any one of claims 12 to 15, wherein,
the first process includes: the film is etched in a state where the substrate is locally heated.
17. The method for treating a substrate according to any one of claims 12 to 16, wherein,
the first process includes: etching solutions are respectively supplied to the central part of the surface of the substrate and the area except the central part of the surface of the substrate.
18. The method for treating a substrate according to any one of claims 12 to 17, wherein,
further comprising a fifth step of updating the processing conditions based on a measured value obtained by measuring the thickness of the film etched in the first step in the fourth step.
19. The method for processing a substrate according to claim 18, wherein,
and a sixth step of supplying an etching liquid to the surface of the subsequent substrate while rotating the subsequent substrate having the other film formed on the surface, and etching the other film based on the processing conditions updated in the fifth step.
20. The substrate processing method according to claim 18 or 19, further comprising the steps of:
a seventh step of determining whether or not a measured value of the film thickness is equal to or less than a predetermined target value; and
and an eighth step of, when it is determined that the measured value of the film thickness exceeds the target value, etching the film by supplying an etching liquid to the surface of the substrate while rotating the substrate again.
21. The method for processing a substrate according to claim 20, wherein,
the eighth step includes: when it is determined that the measured value of the thickness of a part of the film exceeds the target value, an etching solution is supplied to the surface of the substrate while rotating the substrate, and the part of the film is etched.
22. The method for treating a substrate according to any one of claims 12 to 21, wherein,
further comprising a ninth step of determining one processing condition from among a plurality of processing conditions for etching the film based on a measured value obtained by measuring the thickness of the film before etching in the first step in the fourth step,
The first process includes: supplying an etching solution to the surface of the substrate while rotating the substrate, and etching the film based on the one processing condition determined in the ninth step.
23. A computer-readable recording medium,
a program for causing a substrate processing apparatus to execute the substrate processing method according to any one of claims 12 to 22 is recorded.
CN202180073335.4A 2020-11-05 2021-10-25 Substrate processing apparatus, substrate processing method, and computer-readable recording medium Pending CN116438633A (en)

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JP3194037B2 (en) * 1996-09-24 2001-07-30 東京エレクトロン株式会社 Single wafer rotation processing method and apparatus
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