WO2022097520A1 - Substrate processing apparatus, substrate processing method, and computer-readable recording medium - Google Patents

Abstract

The present disclosure describes: a substrate processing apparatus which is capable of measuring, with high accuracy, the thickness of a film that is formed on the surface of a substrate; a substrate processing method; and a computer-readable recording medium.　This substrate processing apparatus is provided with: a rotary holding unit which is configured so as to hold and rotate a substrate; a chemical agent supply unit which is configured so as to supply an etching liquid to the surface of the substrate during the rotation of the substrate by means of the rotary holding unit; a rinsing liquid supply unit which is configured so as to supply a rinsing liquid to the surface of the substrate during the rotation of the substrate by means of the rotary holding unit; a measuring unit which is configured so as to measure the thickness of a film in a state where a measuring head is positioned in the vicinity of the surface of the substrate; a drive unit which is configured so as to relatively move the measuring head in the horizontal direction with respect to the surface of the substrate during the measurement by means of the measuring unit; and an auxiliary supply unit which is configured so as to fill the space between the measuring head and the surface of the substrate with the rinsing liquid by supplying the rinsing liquid to the space during the measurement by means of the measuring unit.

Description

Board processing equipment, board processing method and computer-readable recording medium

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium.

When a substrate (for example, a semiconductor wafer) is microfabricated to manufacture a semiconductor device, a thin film (for example, a silicon oxide film) formed on the surface of the substrate is subjected to a predetermined chemical solution (for example, an etching solution such as hydrofluoric acid). An etching process is performed to remove the thickness until it becomes thick. Patent Document 1 discloses an apparatus for measuring the film thickness of a thin film at the same timing as the etching of the thin film is progressing in order to control the film thickness (etching amount) of the thin film. The device includes an optical probe configured to detect an interference state between the reflected light from the thin film surface and the reflected light from the substrate surface, and a control configured to calculate the film thickness based on the interference state. It has a department.

Japanese Patent Application Laid-Open No. 2003-332299

The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of accurately measuring the thickness of a film formed on the surface of a substrate.

An example of a substrate processing apparatus is a rotation holding portion configured to hold and rotate a substrate having a film formed on its surface, and an etching solution is supplied to the surface of the substrate while the substrate is rotated by the rotation holding portion. The chemical solution supply unit configured as described above, the rinse liquid supply unit configured to supply the rinse liquid to the surface of the substrate during the rotation of the substrate by the rotation holding unit, and the measurement head located near the surface of the substrate. A measuring unit configured to measure the thickness of the film in a state, and a driving unit configured to move the measuring head horizontally with respect to the surface of the substrate during measurement by the measuring unit. It is provided with an auxiliary supply unit configured to supply the rinse liquid to the gap between the measurement head and the surface of the substrate during the measurement by the unit and fill the gap with the rinse liquid.

According to the substrate processing apparatus, the substrate processing method, and the computer-readable recording medium according to the present disclosure, it is possible to accurately measure the thickness of the film formed on the surface of the substrate.

FIG. 1 is a plan view schematically showing an example of a substrate processing apparatus. FIG. 2 is a side view schematically showing an example of the processing unit. FIG. 3 is a perspective view schematically showing a part of the processing unit of FIG. FIG. 4 is a cross-sectional view schematically showing a part of the processing unit of FIG. FIG. 5 is a block diagram showing an example of a main part of the substrate processing apparatus. FIG. 6 is a schematic diagram showing an example of the hardware configuration of the controller. FIG. 7 (a) is a cross-sectional view showing an example of a film thickness profile in which the film thickness is relatively small in the central portion of the substrate, and FIG. 7 (b) is a cross-sectional view showing an example of the film thickness profile in which the film thickness is relatively large in the central portion of the substrate. FIG. 7 (c) is a cross-sectional view showing an example of a film thickness profile, and FIG. 7 (c) is a cross-sectional view showing an example of a film thickness profile having a substantially uniform film thickness over the entire substrate. FIG. 8 is a flowchart for explaining an example of the processing procedure of the substrate. FIG. 9 is a diagram for explaining an example of the processing procedure of the substrate. FIG. 10 is a diagram for explaining the subsequent steps of FIG. FIG. 11 is a diagram for explaining another example of the processing procedure of the substrate. FIG. 12 is a diagram for explaining the subsequent steps of FIG. FIG. 13 is a side view schematically showing another example of the processing unit.

In the following description, the same code will be used for the same element or the element having the same function, and duplicate description will be omitted.

First, with reference to FIG. 1, a substrate processing apparatus 1 configured to process the substrate W will be described. The board processing device 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading / unloading station 2 and the processing station 3 may be arranged in a row in the horizontal direction, for example.

The substrate W may have a disk shape or a plate shape other than a circle such as a polygon. The substrate W may have a notch portion that is partially cut out. The notch portion may be, for example, a notch (a groove having a U-shape, a V-shape, or the like) or a straight portion extending linearly (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

The loading / unloading station 2 includes a loading section 4, a loading / unloading section 5, and a shelf unit 6. The mounting unit 4 includes a plurality of mounting tables (not shown) arranged in the width direction (vertical direction in FIG. 1). Each mounting table is configured so that the carrier 7 (container) can be mounted. The carrier 7 is configured to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for loading / unloading the substrate W.

The loading / unloading section 5 is arranged adjacent to the loading section 4 in the direction in which the loading / unloading station 2 and the processing station 3 are lined up (left-right direction in FIG. 1). The carry-in / carry-out section 5 includes an opening / closing door (not shown) provided corresponding to the mounting section 4. With the carrier 7 mounted on the loading section 4, both the opening / closing door of the carrier 7 and the opening / closing door of the loading / unloading section 5 are opened, so that the inside of the loading / unloading section 5 and the inside of the carrier 7 communicate with each other. do.

The carry-in / carry-out unit 5 has a built-in transport arm A1 and a shelf unit 6. The transport arm A1 is configured to be capable of horizontal movement in the width direction (vertical direction in FIG. 1) of the carry-in / carry-out portion 5, vertical movement in the vertical direction, and swivel movement around the vertical axis. The transfer arm A1 is configured to take out the substrate W from the carrier 7 and pass it to the shelf unit 6, and also receive the substrate W from the shelf unit 6 and return it to the carrier 7. The shelf unit 6 is located in the vicinity of the processing station 3 and is configured to mediate the transfer of the substrate W between the loading / unloading unit 5 and the processing station 3.

The processing station 3 includes a transport unit 8 and a plurality of processing units 10. The transport unit 8 extends horizontally, for example, in the direction in which the carry-in / out station 2 and the processing station 3 are lined up (left-right direction in FIG. 1). The transport unit 8 has a built-in transport arm A2. The transport arm A2 is configured to be capable of horizontal movement in the longitudinal direction (left-right direction in FIG. 1) of the transport portion 8, vertical movement in the vertical direction, and swivel movement around the vertical axis. The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and pass it to each processing unit 10, and also receives the substrate W from each processing unit 10 and returns it to the inside of the shelf unit 6.

The plurality of processing units 10 are arranged in a row on both sides of the transport unit 8 along the longitudinal direction of the transport unit 8 (left-right direction in FIG. 1). The processing unit 10 is configured to perform a predetermined process (for example, a cleaning process) on the substrate W. Details of the processing unit 10 will be described later.

The controller Ctr is configured to partially or wholly control the substrate processing device 1. The details of the controller Ctr will be described later.

[Processing unit]
Subsequently, the processing unit 10 will be described in detail with reference to FIGS. 2 to 4. The processing unit 10 includes a rotation holding unit 20, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a drive unit 50, an auxiliary supply unit 60, a measurement unit 70, and a drive unit 80.

The rotation holding portion 20 includes a rotating portion 21, a shaft 22, and a holding portion 23. The rotating unit 21 operates based on an operation signal from the controller Ctr and is configured to rotate the shaft 22. The rotating portion 21 may be a power source such as an electric motor.

The holding portion 23 is provided at the tip end portion of the shaft 22, and has a disk shape, for example. The holding portion 23 may be configured to suck and hold the entire back surface of the substrate W by, for example, suction. In this case, even if the substrate W is warped or the like, the substrate W is corrected so as to be substantially horizontal along the surface of the holding portion 23. That is, the rotation holding portion 20 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to the surface of the substrate W while the posture of the substrate W is substantially horizontal. As illustrated in FIG. 2, the rotation holding portion 20 may rotate the substrate W counterclockwise when viewed from above.

The holding unit 23 has a plurality of heating units 24 and 25 built-in. The heating units 24 and 25 may be a heat source such as a resistance heating heater. The heating unit 24 is located at the center of the holding unit 23. Therefore, the heating unit 24 is configured to heat the central portion of the substrate W while the substrate W is held by the rotation holding portion 20. The heating portion 25 has an annular shape so as to surround the heating portion 24, and is located on the outer peripheral portion of the holding portion 23. Therefore, the heating unit 25 is configured to heat the outer peripheral portion of the substrate W while the substrate W is held by the rotation holding unit 20. In other words, the heating units 24 and 25 are configured to partially heat the substrate W, respectively.

The chemical solution supply unit 30 is configured to supply the etching solution L1 to the substrate W. The etching solution L1 is, for example, a chemical solution for etching a film F (for example, a thin film such as a silicon oxide film) arranged on the surface Wa of the substrate W. The etching solution L1 contains, for example, an alkaline chemical solution, an acidic chemical solution, and the like. The alkaline chemical solution contains, for example, SC-1 solution (a mixed solution of ammonia, hydrogen peroxide and pure water), hydrogen peroxide solution, and the like. Acidic chemicals include, for example, SC-2 solution (mixed solution of hydrochloric acid, hydrogen peroxide and pure water), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO ₃ + HF solution (nitric acid and hydrofluoric acid). Mixture solution) and the like.

The chemical liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, and a pipe 35. The liquid source 31 is a supply source of the etching liquid L1. The pump 32 operates based on an operation signal from the controller Ctr, and is configured to send the etching liquid L1 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.

The valve 33 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the flow of fluid in the pipe 35 and a closed state that hinders the flow of the fluid in the pipe 35. There is. The nozzle 34 is arranged above the substrate W so that the ejection port faces the surface Wa of the substrate W. The nozzle 34 is configured to discharge the etching solution L1 delivered from the pump 32 from the discharge port. The pipe 35 connects the liquid source 31, the pump 32, the valve 33, and the nozzle 34 in this order from the upstream side.

The rinse liquid supply unit 40 is configured to supply the rinse liquid L2 to the substrate W. The rinsing liquid L2 is, for example, a cleaning liquid for washing away the dissolved components of the film F by the etching liquid L1 and the etching liquid L1 supplied to the surface Wa of the substrate W from the surface Wa. The rinse liquid L2 contains, for example, pure water (DIW: deionized water) or the like.

The rinse liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44, and a pipe 45. The liquid source 41 is a supply source of the rinse liquid L2. The pump 42 operates based on an operation signal from the controller Ctr, and is configured to send the rinse liquid L2 sucked from the liquid source 41 to the nozzle 44 via the pipe 45 and the valve 43.

The valve 43 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the flow of fluid in the pipe 45 and a closed state that hinders the flow of the fluid in the pipe 45. There is. The nozzle 44 is arranged above the substrate W so that the ejection port faces the surface Wa of the substrate W. The nozzle 44 is configured to discharge the rinse liquid L2 delivered from the pump 42 from the discharge port. The pipe 45 connects the liquid source 41, the pump 42, the valve 43, and the nozzle 44 in this order from the upstream side.

The drive unit 50 includes a holding portion 51 and a drive mechanism 52. The holding portion 51 is configured to hold the nozzles 34 and 44. The drive mechanism 52 operates based on the signal from the controller Ctr, and is configured to move the holding portion 51 in the horizontal direction and the vertical direction. Therefore, the nozzles 34 and 44 move in the horizontal direction and the vertical direction as the holding portion 51 moves.

The auxiliary supply unit 60 is configured to supply the rinse liquid L2 to the substrate W. It includes a liquid source 61, a pump 62, a valve 63, a nozzle 64, and a pipe 65. The liquid source 61 is a supply source of the rinse liquid L2. The pump 62 operates based on an operation signal from the controller Ctr, and is configured to send the rinse liquid L2 sucked from the liquid source 61 to the nozzle 64 via the pipe 65 and the valve 63.

The valve 63 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the flow of fluid in the pipe 65 and a closed state that hinders the flow of the fluid in the pipe 65. There is. The nozzle 64 is arranged above the substrate W so that the ejection port faces the surface Wa of the substrate W. The nozzle 64 is configured to discharge the rinse liquid L2 delivered from the pump 62 from the discharge port. The pipe 65 connects the liquid source 61, the pump 62, the valve 63, and the nozzle 64 in this order from the upstream side.

The measuring unit 70 is configured to measure the thickness of the film F arranged on the surface Wa of the substrate W (hereinafter, simply referred to as “film thickness”) and transmit the measured value to the controller Ctr. The measuring unit 70 may be configured to measure the film thickness with reference to the surface Wa of the substrate W. The measuring unit 70 may be, for example, a film thickness measuring device using a spectroscopic interferometry. In this case, the measuring unit 70 is, for example, an irradiation unit that irradiates light toward the surface Wa of the substrate W, light reflected by the irradiation unit on the surface Wa of the substrate W, and light from the irradiation unit is the film F. It may include a light receiving unit that receives multiple reflected light, which is a superposition of light reflected on the surface of the above.

The measuring unit 70 includes a measuring head 71 arranged in the vicinity of the surface Wa of the substrate W when measuring the film thickness. Therefore, during the measurement of the film thickness, a gap G exists between the tip of the measuring head 71 and the surface Wa of the substrate W.

The drive unit 80 includes a holding unit 81 and a drive mechanism 82 (drive unit). The holding portion 81 is configured to hold the nozzle 64 and the measuring head 71. The nozzle 64 and the measuring head 71 may be adjacent to each other while the nozzle 64 and the measuring head 71 are held by the holding portion 81. As illustrated in FIGS. 2 to 4, when the nozzle 64 and the measuring head 71 are held by the holding portion 81, the tip (lower end) of the measuring head 71 is more on the surface Wa of the substrate W than the lower end of the nozzle 64. It may be located near.

In a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81, the measuring head 71 may be located radially outward from the nozzle 64. In a state where the nozzle 64 and the measurement head 71 are held by the holding portion 81, the measurement head 71 may be located on the downstream side in the rotation direction of the substrate W with respect to the nozzle 64. In a state where the nozzle 64 and the measuring head 71 are held by the holding portion 81, the measuring head 71 is located on the downstream side of the rotating substrate W where the rinse liquid L2 discharged from the nozzle 64 flows through the surface Wa. It may be located (see FIG. 3).

The drive mechanism 82 operates based on a signal from the controller Ctr, and is configured to move the holding portion 81 in the horizontal direction and the vertical direction. Therefore, the nozzle 64 and the measuring head 71 move in the horizontal direction and the vertical direction as the holding portion 81 moves.

[Controller details]
As shown in FIG. 5, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an indicating unit M4 as functional modules. These functional modules merely divide the functions of the controller Ctr into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the circuits. You may.

The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing apparatus 1 including the processing unit 10. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk.

The storage unit M2 is configured to store various data. The storage unit M2 may store, for example, a program read from the recording medium RM by the reading unit M1, setting data input from the operator via an external input device (not shown), and the like. The storage unit M2 may store, for example, the measured value of the film thickness received from the measuring unit 70, the target value of the film thickness, the processing conditions for the etching process of the film F, and the like.

The processing conditions may be composed of a combination of a plurality of set values for operating each part of the processing unit 10 during the etching process. The set values are, for example, the position of the nozzle 34 with respect to the surface Wa of the substrate W, the discharge flow rate of the etching solution L1, the ejection time of the etching solution L1, the temperature of the etching solution L1, the rotation speed of the substrate W, and the temperatures of the heating units 24 and 25. Etc. may be included.

The storage unit M2 may store in advance the film thickness profile in the plane of the substrate W, that is, the processing conditions corresponding to the fluctuation state of the film thickness in the plane of the substrate W. For example, the etching rate of the outer peripheral portion of the substrate W becomes higher than that of the central portion corresponding to the first film thickness profile (see FIG. 7A) in which the film thickness at the central portion of the substrate W is smaller than that of the outer peripheral portion. The first processing condition configured by the combination of such set values may be stored in advance in the storage unit M2. For example, the etching rate of the outer peripheral portion of the substrate W is smaller than that of the central portion corresponding to the second film thickness profile (see FIG. 7B) in which the film thickness at the central portion of the substrate W is larger than that of the outer peripheral portion. The second processing condition configured by the combination of such set values may be stored in advance in the storage unit M2. For example, a combination of set values such that the etching rate is substantially uniform over the entire substrate W, corresponding to a third film thickness profile (see FIG. 7 (c)) in which the film thickness is substantially uniform over the entire substrate W. The third processing condition configured by the above may be stored in advance in the storage unit M2.

The processing unit M3 is configured to process various data. The processing unit M3 is, for example, based on various data stored in the storage unit M2, and each unit of the substrate processing device 1 (for example, a rotating unit 21, a heating unit 24, 25, a pump 32, 42, 62, a valve 33, 43, 63, drive mechanism 52, 82) may be generated to operate the signal.

The instruction unit M4 drives the operation signal generated by the processing unit M3 into each unit of the substrate processing device 1 (for example, the rotating unit 21, the heating unit 24, 25, the pump 32, 42, 62, the valve 33, 43, 63,). It is configured to transmit to the mechanisms 52, 82).

The hardware of the controller Ctr may be configured by, for example, one or a plurality of control computers. As shown in FIG. 6, the controller Ctr may include the circuit C1 as a hardware configuration. The circuit C1 may be composed of an electric circuit element (circuitry). The circuit C1 may include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

The processor C2 is configured to realize each of the above-mentioned functional modules by executing a program in cooperation with at least one of the memory C3 and the storage C4 and executing input / output of a signal via the input / output port C6. It may have been done. The memory C3 and the storage C4 may function as the storage unit M2. The driver C5 may be a circuit configured to drive each part of the substrate processing device 1. The input / output port C6 may be configured to mediate the input / output of a signal between the driver C5 and each part of the board processing device 1.

The board processing device 1 may include one controller Ctr, or may include a controller group (control unit) composed of a plurality of controller Ctrs. When the board processing apparatus 1 includes a controller group, each of the above functional modules may be realized by one controller Ctr, or may be realized by a combination of two or more controller Ctrs. .. When the controller Ctr is composed of a plurality of computers (circuit C1), each of the above functional modules may be realized by one computer (circuit C1), or two or more computers (circuit C1). ) May be realized. The controller Ctr may have a plurality of processors C2. In this case, each of the above functional modules may be realized by one processor C2 or may be realized by a combination of two or more processors C2.

[Board processing method]
Subsequently, with reference to FIGS. 8 to 10, a substrate processing method including an etching process of the film F and a film thickness measurement process will be described. Prior to the start of the method, the carrier 7 is previously mounted on the mounting table of the mounting unit 4. At least one substrate W on which the film F is formed on the surface Wa is housed in the carrier 7.

First, the controller Ctr controls the transfer arms A1 and A2 to take out one substrate W from the carrier 7 and transfer it to one of the processing units 10. The substrate W conveyed into the processing unit 10 is placed on the holding portion 23.

Next, the controller Ctr controls the rotating portion 21 and the holding portion 23 (rotating holding portion 20) to suck and hold the back surface of the substrate W by the holding portion 23 and rotate the substrate W. In this state, as illustrated in FIGS. 3, 4 and 9 (a), the controller Ctr controls the pumps 42, 62 and the valves 43, 63 (rinse liquid supply unit 40 and auxiliary supply unit 60). , The rinse liquid L2 is supplied to each of the surface Wa and the gap G of the substrate W.

The rinse liquid L2 discharged from the nozzle 44 may be supplied toward the substantially central portion of the surface Wa of the substrate W. In this case, the rinse liquid L2 discharged from the nozzle 44 flows through the entire surface Wa from the central portion of the substrate W toward the peripheral edge due to the rotation of the substrate W, and then is shaken off to the outside. Therefore, the thin film R1 of the rinse liquid L2 (see FIGS. 4 and 9 (a)) is formed on the entire surface Wa of the substrate W. Therefore, the appearance of the dry region is suppressed on the surface Wa of the substrate W. The thickness of the thin film R1 formed on the surface Wa of the substrate W by the rinse liquid L2 discharged from the nozzle 44 may be, for example, about 0.1 mm to 0.4 mm.

On the other hand, the rinse liquid L2 supplied from the nozzle 64 to the gap G flows from the liquid landing position on the surface Wa of the substrate W toward the peripheral edge of the substrate W due to the rotation of the substrate W, and then is shaken off to the outside. Therefore, a thick film R2 of the rinse liquid L2 (see FIGS. 4 and 9 (a)) is formed in the vicinity of the gap G. The thickness of the thick film R2 may be, for example, about 1 mm to 3 mm. During the measurement of the film thickness, the state where the tip of the measuring head 71 is always located in the thick film R2 (the state of being constantly immersed in the rinsing liquid L2) is maintained (FIGS. 3, 4 and 9 (a)). reference).

Next, while the substrate W is rotating and the rinse liquid L2 is being supplied from the nozzles 44 and 64 to the substrate W, the controller Ctr controls the drive mechanism 82 to transfer the measurement head 71 (holding portion 81) to the substrate W. It is moved substantially horizontally along the surface Wa. As a result, the film thickness of the film F in the plane of the substrate W is measured by the measuring unit 70, and the measured value is stored in the storage unit M2 (see steps S1 and 9 (a) in FIG. 8). At this time, the instruction unit M4 may execute a process of controlling the drive mechanism 82 so that the measurement head 71 (holding unit 81) is moved in the substantially horizontal direction along the radial direction of the substrate W. The instruction unit M4 may execute a process of controlling the drive mechanism 82 so that the measurement head 71 (holding unit 81) is moved from the central portion of the substrate W toward the peripheral edge. The instruction unit M4 may execute a process of controlling the drive mechanism 82 so that the measurement head 71 (holding unit 81) is moved from the peripheral edge of the substrate W toward the central portion.

Next, the controller Ctr selects one processing condition from the plurality of processing conditions stored in the storage unit M2 based on the measured value of the film thickness measured in step S1 (see step S2 in FIG. 8). .. In this case, processing conditions suitable for etching the film F are selected based on the measured value of the film thickness before etching. Therefore, for example, even when the film thickness before etching fluctuates in the plane of the substrate W, the film thickness after etching can be made uniform.

Based on the measured value in step S1, the controller Ctr may select a processing condition such that the thickness of the film F after the etching process is equal to or less than a predetermined target value and is almost flat as a whole. For example, when the measured value measured in step S1 indicates the first film thickness profile (see FIG. 7A), the controller Ctr may select the first processing condition from the storage unit M2. When the measured value measured in step S1 indicates a second film thickness profile (see FIG. 7B), the controller Ctr may select the second processing condition from the storage unit M2. When the measured value measured in step S1 is indicated by the third film thickness profile (see FIG. 7C), the controller Ctr may select the third processing condition from the storage unit M2.

Next, based on the processing conditions selected in step S2, the controller Ctr controls the rotation holding unit 20 to rotate the substrate W sucked and held by the holding unit 23 at a predetermined rotation speed. In this state, the controller Ctr controls the pump 32 and the valve 33 (chemical liquid supply unit 30) based on the processing conditions selected in step S2, and the etching solution L1 is transferred to the substrate at a predetermined discharge flow rate, discharge time, and temperature. It is supplied to the surface Wa of W (see step S3 and FIG. 9B in FIG. 8). Even if the etching liquid L1 is started to be supplied while the rinse liquid L2 supplied in step S1 covers the surface Wa of the substrate W in order to suppress the appearance of the dry region on the surface Wa of the substrate W. good. Therefore, the supply of the rinse liquid L2 from the nozzles 44 and 64 may be stopped after the supply of the etching liquid L1 is started.

The controller Ctr may set other parts of the processing unit 10 by using a plurality of setting values included in the processing conditions selected in step S2. For example, when the first processing condition is selected, the controller Ctr may control the heating units 24 and 25 so that the temperature of the heating unit 25 is higher than that of the heating unit 24. In this case, since the etching rate at the outer peripheral portion of the substrate W is higher than that at the central portion, the film F at the outer peripheral portion of the substrate W is more likely to be etched. When the second processing condition is selected, the controller Ctr may control the heating units 24 and 25 so that the temperature of the heating unit 24 is higher than that of the heating unit 25. In this case, since the etching rate in the central portion of the substrate W is higher than that in the outer peripheral portion, the film F in the central portion of the substrate W is more likely to be etched.

The etching solution L1 discharged from the nozzle 34 may be supplied toward the substantially central portion of the surface Wa of the substrate W. In this case, the etching solution L1 discharged from the nozzle 34 flows through the entire surface Wa from the central portion of the substrate W toward the peripheral edge due to the rotation of the substrate W, and then is shaken off to the outside. Therefore, the thin film R3 of the etching solution L1 (see FIG. 9B) is formed on the entire surface Wa of the substrate W. Therefore, the appearance of the dry region is suppressed on the surface Wa of the substrate W.

Next, the controller Ctr controls each part of the processing unit 10 in the same manner as in step S1 and measures the film thickness of the film F in the plane of the substrate W by the measuring unit 70 (steps S4 and 3 in FIG. 8). 4 and 10 (a)). In order to suppress the appearance of the dry region on the surface Wa of the substrate W, the rinse liquid L2 from the nozzles 44 and 64 is covered with the etching solution L1 supplied in step S3 while covering the surface Wa of the substrate W. Supply may be started. Therefore, the supply of the etching solution L1 may be stopped after the supply of the rinse solution L2 from the nozzles 44 and 64 is started.

Next, the controller Ctr updates the processing conditions based on the measured value of the film thickness measured in step S4, and stores the updated processing conditions in the storage unit M2 (see step S5 in FIG. 8). For example, when the measured value indicates the first film thickness profile (see FIG. 7A), it is included in the processing conditions so that the etching rate at the outer peripheral portion of the substrate W is higher than that at the central portion. At least one of a plurality of setting values may be updated. In this case, since the etching processing conditions are updated based on the measured value of the film thickness after etching, it is possible to control the etching processing by feedback. When the measured value indicates the second film thickness profile (see FIG. 7B), a plurality of processing conditions are included so that the etching rate in the central portion of the substrate W is higher than that in the outer peripheral portion. At least one of the set values may be updated.

Next, the controller Ctr determines whether or not the measured value of the film thickness measured in step S4 is equal to or less than a predetermined target value (see step S6 in FIG. 8). When the measured value of the film thickness measured in step S4 is equal to or less than a predetermined target value (when “YES” in step S6 of FIG. 8), the controller Ctr controls the rotation holding unit 20 to the holding unit 23. The substrate W that is attracted and held is rotated at a predetermined rotation speed for a predetermined time. As a result, the rinse liquid L2 is shaken off from the surface Wa of the substrate W, and the substrate W is dried (see step S7 and FIG. 10B in FIG. 8). After that, the controller Ctr controls the transport arms A1 and A2 to transport the dried substrate W and return it to the carrier 7.

On the other hand, when the measured value of the film thickness measured in step S4 exceeds a predetermined target value (when “NO” in step S6 of FIG. 8), the controller Ctr sets the processing conditions used in step S3. Correct (see step S9 in FIG. 8). That is, the controller Ctr corrects at least one of the plurality of set values included in the processing conditions so that the processing conditions can obtain a larger etching rate.

Next, the controller Ctr controls the rotation holding unit 20 based on the processing conditions corrected in step S4, and rotates the substrate W sucked and held by the holding unit 23 at a predetermined rotation speed. Let me. In this state, the controller Ctr controls the chemical liquid supply unit 30 based on the processing conditions corrected in step S4 to supply the etching liquid L1 to the surface Wa of the substrate W at a predetermined discharge flow rate, discharge time, and temperature. (See step S10 in FIG. 8). As a result, of the film F in the plane of the substrate W, at least the portion where the film thickness exceeds a predetermined target value is etched again. In this case, even if the film thickness after etching exceeds a predetermined target value, the same substrate W can be effectively used without being discarded by etching the same substrate W again.

If the film thickness of a part of the film F after etching exceeds a predetermined target value, the processing conditions may be corrected so that the part is mainly etched in step S9. In this case, in step S10, the film F is re-etched using the corrected processing conditions, so that the film thickness after the re-etching treatment can be made uniform.

After that, steps S4 and below are repeatedly executed until the film thickness becomes equal to or less than a predetermined target value. Even if the etching liquid L1 is started to be supplied while the rinse liquid L2 supplied in step S4 covers the surface Wa of the substrate W in order to suppress the appearance of the dry region on the surface Wa of the substrate W. good. Therefore, the supply of the rinse liquid L2 from the nozzles 44 and 64 may be stopped after the supply of the etching liquid L1 is started. Further, the controller Ctr may further update the processing conditions updated in step S5 by using the corrected processing conditions.

When the drying of the substrate W is completed in step S7, the controller Ctr determines whether or not there is a subsequent substrate W to be processed (see step S8 in FIG. 8). When there is no subsequent substrate W to be processed (when “YES” in step S8 of FIG. 8), that is, when all the substrates W housed in the carrier 7 are processed, the substrate processing ends.

On the other hand, when there is a subsequent substrate W to be processed (when "NO" in step S8 of FIG. 8), that is, when the unprocessed substrate W is housed in the carrier 7, the controller Ctr is the transfer arm A1. , A2 is controlled, one unprocessed substrate W is taken out from the carrier 7, and the substrate W is placed on the holding portion 23. After that, as illustrated in FIG. 8, step S2 or lower may be executed for the substrate W. At this time, in step S2, the processing conditions updated in step S5 may be used. In the substrate W of the same lot, the film thickness profile of the film F formed on the surface Wa tends to be similar. Therefore, by using the processing conditions after the update, step S1 is omitted and the untreated substrate W is used. Etching process can be performed efficiently.

[Action]
According to the above example, the state in which the measuring head 71 is immersed in the rinsing liquid L2 is maintained during the measurement of the film thickness by the measuring unit 70. Therefore, when measuring the film thickness, it is not affected by the surface fluctuation of the rinse liquid L2. Therefore, it is possible to accurately measure the thickness of the film F formed on the surface of the substrate W. Further, when the film thickness is measured by the measuring unit 70, the etching solution L1 does not adhere to the measuring unit 70. Therefore, since it is not necessary to consider the chemical resistance of the measuring unit 70, the cost of the measuring unit 70 can be suppressed, and the film thickness can be measured in substantially the same environment regardless of the type of the etching solution L1. Is possible.

According to the above example, a liquid film of the rinse liquid L2 is formed on the entire surface Wa of the substrate W during the measurement of the film thickness by the measuring unit 70. Therefore, the drying of the surface Wa of the substrate W is suppressed by the rinsing liquid L2, so that particles and the like are less likely to adhere to the surface Wa of the substrate W. Therefore, it is possible to improve the quality of the surface treatment of the substrate W.

According to the above example, the holding portion 23 is configured to totally adsorb the back surface of the substrate W. Therefore, even if the substrate W is warped, the surface Wa of the substrate W is kept substantially horizontal by being totally adsorbed on the holding portion 23. Therefore, the film thickness can be measured more accurately.

According to the above example, the measuring unit 70 is configured to measure the thickness of the film F with reference to the surface Wa of the substrate W. Therefore, even if there is a variation in the thickness of the substrate W in the plane of the substrate W, the film thickness is measured by excluding the influence of the variation. Therefore, the film thickness can be measured more accurately.

According to the above example, the heating units 24 and 25 are configured to partially heat the substrate W. Therefore, when the heating units 24 and 25 operate during the etching process, the etching progress rate changes between the partially heated region of the substrate W and the other regions. Therefore, when the thickness of the film F formed on the substrate W is not uniform, the region of the substrate W having a large film thickness is partially heated by the heating portions 24 and 25 to reduce the film thickness after etching. It is possible to make them evenly close.

[Modification example]
The disclosure herein should be considered exemplary and not restrictive in all respects. Various omissions, substitutions, changes, etc. may be made to the above examples within the scope of the claims and the gist thereof.

(1) In the above example, the film thickness is measured by the measuring unit 70 while the rinse liquid L2 is being supplied to the substrate W, that is, in a state where the progress of the etching process of the film F is suppressed by the rinse liquid L2. I was going. However, the film thickness may be measured by the measuring unit 70 while the etching process of the film F is in progress. In this case, first, the controller Ctr controls the rotation holding unit 20 and the chemical solution supply unit 30 based on predetermined processing conditions, and supplies the etching solution L1 to the surface Wa of the rotating substrate W to the surface Wa of the substrate W. Let me. (See FIG. 11 (a)).

When the etching process progresses to some extent, the controller Ctr controls the auxiliary supply unit 60 while continuing to discharge the etching liquid L1 from the nozzle 34, so that the etching liquid L1 is also supplied to the gap G (see FIG. 11B). ). That is, in this example, the etching solution L1 is stored in the liquid source 61 of the auxiliary supply unit 60. While the etching solution L1 is being supplied to the surface Wa of the substrate W and the gap G, the controller Ctr controls the drive mechanism 82 to move the measurement head 71 (holding portion 81) substantially horizontally along the surface Wa of the substrate W. Move (see FIG. 11 (b)). As a result, the film thickness of the film F during the etching process is measured by the measuring unit 70, and the measured value is stored in the storage unit M2.

After that, the film thickness measurement during the etching process is repeated as necessary until the measured film thickness becomes equal to or less than the predetermined target value. When the measured film thickness is equal to or less than a predetermined target value, the controller Ctr controls the rotation holding unit 20 and the rinsing liquid supply unit 40 to supply the rinsing liquid L2 to the surface Wa of the rotating substrate W ( See FIG. 12 (a)). As a result, the etching solution L1 is washed away from the surface Wa of the substrate W by the rinsing solution L2. Next, the substrate W is dried in the same manner as in step S7, and the processing of the substrate is completed (see FIG. 12B).

(2) As illustrated in FIG. 13, the processing unit 10 may further include a chemical solution supply unit 90 (another chemical solution supply unit) configured to supply the etching solution L1 to the substrate W. In this case, the progress rate of etching of the film F is different between the region of the substrate W to which the etching solution is supplied from the chemical solution supply unit 30 and the region of the substrate W to which the etching solution L1 is supplied from the chemical solution supply unit 90. Therefore, when the thickness of the film on the surface of the substrate W fluctuates (when the film thickness in the plane of the substrate W is non-uniform), the etching solution L1 is also sent from the chemical solution supply unit 90 in addition to the chemical solution supply unit 30. Is supplied to the surface Wa of the substrate W, so that the film thickness after etching can be made uniform.

In the example of FIG. 13, when the first processing condition is selected in step S2, the controller Ctr has a discharge flow rate, a discharge time, a temperature, etc. of the etching solution L1 in the chemical solution supply unit 90, which is higher than that of the chemical solution supply unit 30. The chemical solution supply units 30 and 90 may be controlled so as to increase the size. In this case, since the etching rate at the outer peripheral portion of the substrate W is higher than that at the central portion, the film F at the outer peripheral portion of the substrate W is more likely to be etched. On the other hand, when the second processing condition is selected in step S2, the controller Ctr causes the chemical solution supply unit 30 to have a larger discharge flow rate, discharge time, temperature, etc. of the etching solution L1 than the chemical solution supply unit 90. , The chemical supply units 30, 90 may be controlled. In this case, since the etching rate in the central portion of the substrate W is higher than that in the outer peripheral portion, the film F in the central portion of the substrate W is more likely to be etched.

(3) In the above example, the nozzles 34 and 44 are held by the holding portion 51 and are configured to move along with the holding portion 51. However, the nozzles 34, 44 are connected to separate drive mechanisms and may be configured to move individually. Similarly, the nozzle 64 and the measuring unit 70 may be connected to separate drive mechanisms and configured to move individually.

(4) In the above example, the nozzles 34, 44, 64 and the measuring unit 70 are configured to move horizontally with respect to the surface Wa of the substrate W. However, the substrate W may be configured to move horizontally with respect to the nozzles 34, 44, 64 and the measuring unit 70, or both the nozzles 34, 44, 64 and the measuring unit 70 and the substrate W move horizontally. It may be configured to do so.

[Other examples]
Example 1. An example of a substrate processing apparatus is a rotation holding portion configured to hold and rotate a substrate having a film formed on its surface, and an etching solution is supplied to the surface of the substrate while the substrate is rotated by the rotation holding portion. The chemical solution supply unit configured as described above, the rinse liquid supply unit configured to supply the rinse liquid to the surface of the substrate during the rotation of the substrate by the rotation holding unit, and the measurement head located near the surface of the substrate. A measuring unit configured to measure the thickness of the film in a state, and a driving unit configured to move the measuring head horizontally with respect to the surface of the substrate during measurement by the measuring unit. It is provided with an auxiliary supply unit configured to supply the rinse liquid to the gap between the measurement head and the surface of the substrate during the measurement by the unit and fill the gap with the rinse liquid. In this case, the state in which the measuring head is immersed in the rinsing liquid is maintained during the measurement of the film thickness by the measuring unit. Therefore, when measuring the film thickness, it is not affected by the surface fluctuation of the rinsing liquid. Therefore, it is possible to accurately measure the thickness of the film formed on the surface of the substrate. Further, when the film thickness is measured by the measuring unit, the etching solution does not adhere to the measuring unit. Therefore, since it is not necessary to consider the chemical resistance of the measuring unit, it is possible to reduce the cost of the measuring unit and to measure the film thickness in substantially the same environment regardless of the type of etching solution. Become.

Example 2. In the apparatus of Example 1, the rinse liquid supply unit may be configured to form a liquid film of the rinse liquid on the entire surface of the substrate during the measurement by the measurement unit. In this case, since the drying of the surface of the substrate is suppressed by the rinsing liquid, it becomes difficult for particles and the like to adhere to the surface of the substrate. Therefore, it is possible to improve the quality of the surface treatment of the substrate.

Example 3. In the apparatus of Example 1 or Example 2, the rotation holding portion may include a holding portion configured to totally adsorb the back surface of the substrate. In this case, even if the substrate is warped, the surface of the substrate is kept substantially horizontal by being totally adsorbed to the holding portion. Therefore, the film thickness can be measured more accurately.

Example 4. In any of the devices of Examples 1 to 3, the measuring unit may be configured to measure the thickness of the film with reference to the surface of the substrate. In this case, even if there is a variation in the thickness of the substrate in the plane of the substrate, the film thickness is measured by excluding the influence of the variation. Therefore, the film thickness can be measured more accurately.

Example 5. The apparatus according to any one of Examples 1 to 4 may further include a heating unit configured to partially heat the substrate. In this case, due to the operation of the heating unit during the etching process, the etching progress rate changes between the partially heated region of the substrate and the other regions. Therefore, when the thickness of the film formed on the substrate is not uniform, the film thickness after etching can be made uniform by partially heating the region of the substrate where the film thickness is large by the heating portion. It becomes.

Example 6. The apparatus according to any one of Examples 1 to 5 further includes another chemical solution supply unit configured to supply the etching solution to a region other than the central portion of the surface of the substrate during rotation of the substrate by the rotation holding unit. The chemical liquid supply unit may be configured to supply the etching liquid to the central portion of the surface of the substrate during the rotation of the substrate by the rotation holding unit. In this case, the progress rate of etching of the film is different between the region of the substrate to which the etching solution is supplied from the chemical solution supply unit and the region of the substrate to which the etching solution is supplied from another chemical solution supply unit. Therefore, when the thickness of the film on the surface of the substrate fluctuates, it is possible to make the film thickness after etching evenly close by supplying the etching solution to the surface of the substrate from another chemical solution supply unit. Become.

Example 7. The device according to any one of Examples 1 to 6 further includes a control unit, and the control unit controls the rotation holding unit so as to hold and rotate the substrate, and supplies the etching solution to the surface of the substrate. After the first process of controlling the chemical solution supply unit to etch the film based on predetermined processing conditions and the first process, the substrate is controlled to hold and rotate the substrate while controlling the substrate. The second process of controlling the rinse liquid supply unit and the auxiliary supply unit so as to supply the rinse liquid to the surface and the gap of the surface and the gap, respectively, and the measurement during the supply of the rinse liquid and the rotation of the substrate in the second process. A third process that controls the measuring unit to measure the film thickness while controlling the drive unit so that the head moves relative to the surface of the substrate in the horizontal direction, and the measured value of the film thickness. It may be configured to execute the fourth process of updating the process condition based on the above. In this case, since the etching processing conditions are updated based on the measured value of the film thickness after etching, it is possible to control the etching processing by feedback.

Example 8. In the apparatus of Example 7, the control unit controls the rotation holding unit so as to hold and rotate the subsequent substrate on which another film is formed on the surface, and supplies the etching solution to the surface of the succeeding substrate. It may be configured to control the chemical solution supply unit to further perform a fifth process of etching another film based on the process conditions after being updated in the fourth process. By the way, in the same lot of substrates, the fluctuation state (film thickness profile) of the thickness of the film formed on the surface tends to be similar. Therefore, according to Example 8, when processing the same lot of substrates, the measurement of the film thickness before the etching treatment on the subsequent substrate can be omitted by using the processing conditions after the update. Therefore, it is possible to efficiently perform the subsequent etching process of the substrate.

Example 9. In the apparatus of Example 7 or Example 8, the control unit performs a sixth process of determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value, and the measured value of the film thickness is the target value. When it is determined that the amount exceeds the above, the film is etched by controlling the rotation holding unit so as to hold and rotate the substrate again and controlling the chemical solution supply unit so as to supply the etching solution to the surface of the substrate. It may be configured to further execute the seventh process. In this case, since the same substrate is etched again, the film can be etched so that the film thickness is equal to or less than a predetermined target value. Therefore, even if the film thickness after etching exceeds a predetermined target value, the substrate on which the film is formed can be effectively used without being discarded.

Example 10. In the apparatus of Example 9, in the seventh process, when it is determined that the measured value of a part of the film thickness exceeds the target value, the rotation holding portion is controlled so as to hold and rotate the substrate. , The chemical solution supply unit may be controlled so as to supply the etching solution to the surface of the substrate, and a part of the film may be etched. In this case, the portion of the film whose film thickness exceeds the target value is mainly etched. Therefore, it is possible to make the film thickness of the same substrate after the etching process to be uniform.

Example 11. The apparatus according to any one of Examples 7 to 10 further includes a control unit and a storage unit configured to store a plurality of processing conditions for etching the film, and the control unit holds the substrate. The eighth process of controlling the rinse liquid supply unit and the auxiliary supply unit so as to supply the rinse liquid to the surface and the gap of the substrate while controlling the rotation holding unit so as to rotate, and the rinse in the eighth process. While supplying the liquid and rotating the substrate, the measuring unit is controlled to measure the thickness of the film while controlling the drive unit so as to move the measuring head relative to the surface of the substrate in the horizontal direction. The ninth process, the tenth process of determining one process condition from a plurality of process conditions based on the measured value of the film thickness, and the tenth process of controlling the rotation holding unit so as to hold and rotate the substrate. The chemical solution supply unit is controlled so as to supply the etching solution to the surface of the substrate, and the eleventh process of etching the film based on one process condition determined in the tenth process is further executed. It may be configured. In this case, the etching treatment conditions suitable for etching the film are selected based on the measured value of the film thickness before etching. Therefore, for example, even when the film thickness before etching fluctuates in the plane of the substrate, the film thickness after etching can be made uniform.

Example 12. An example of the substrate processing method is a first step of supplying an etching solution to the surface of a substrate while rotating a substrate having a film formed on the surface to etch the film based on predetermined processing conditions, and a measurement head. A second step of arranging the etching solution near the surface of the substrate, and a third step of supplying the rinse liquid to the gap between the surface of the substrate and the gap between the measuring head and the surface of the substrate while rotating the substrate. The third step includes a fourth step of measuring the thickness of the film while moving the measuring head horizontally with respect to the surface of the substrate while supplying the rinse liquid and rotating the substrate. In this case, the same effect as that of the apparatus of Example 1 can be obtained.

Example 13. In the method of Example 12, the second step may include supplying the rinse liquid to the surface of the substrate so that a liquid film of the rinse liquid is formed on the entire surface of the substrate. In this case, the same effect as that of the apparatus of Example 2 can be obtained.

Example 14. In the method of Example 12 or Example 13, the fourth step may include measuring the thickness of the film by a measuring unit with the back surface of the substrate totally adsorbed. In this case, the same effect as that of the apparatus of Example 3 can be obtained.

Example 15. In any of the methods of Examples 12 to 14, the fourth step may include measuring the thickness of the film by a measuring unit with reference to the surface of the substrate. In this case, the same effect as that of the apparatus of Example 4 can be obtained.

Example 16. In any of the methods of Examples 12 to 15, the first step may include etching the film with the substrate partially heated. In this case, the same effect as that of the apparatus of Example 5 can be obtained.

Example 17. In any of the methods of Examples 12 to 16, the first step may include supplying the etching solution to the central portion of the surface of the substrate and the region other than the central portion of the surface of the substrate, respectively. .. In this case, the same effect as that of the apparatus of Example 6 can be obtained.

Example 18. In any of the methods 12 to 17, the fifth step is to update the processing conditions based on the measured values obtained by measuring the thickness of the film etched in the first step in the fourth step. Further steps may be included. In this case, the same effect as that of the apparatus of Example 7 can be obtained.

Example 19. The method of Example 18 is based on the processing conditions after being updated in the fifth step by supplying an etching solution to the surface of the succeeding substrate while rotating the succeeding substrate having another film formed on the surface. It may further include a sixth step of etching another film. In this case, the same effect as that of the apparatus of Example 8 can be obtained.

Example 20. The method of Example 18 or Example 19 is a seventh step of determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value, and determining that the measured value of the film thickness exceeds the target value. If this is the case, the eighth step of supplying the etching solution to the surface of the substrate while rotating the substrate again to etch the film may be further included. In this case, the same effect as that of the apparatus of Example 9 can be obtained.

Example 21. In the method of Example 20, in the eighth step, when it is determined that the measured value of a part of the film thickness exceeds the target value, the etching solution is supplied to the surface of the substrate while rotating the substrate. , May include etching a portion of the film. In this case, the same effect as that of the apparatus of Example 10 can be obtained.

Example 22. The method of any of Examples 12 to 21 is for etching the film based on the measured value obtained by measuring the thickness of the film before being etched in the first step in the fourth step. The ninth step of determining one processing condition from the plurality of processing conditions of the above is further included, and the first step is determined in the ninth step by supplying an etching solution to the surface of the substrate while rotating the substrate. It may include etching the film based on one of the treatment conditions. In this case, the same effect as that of the apparatus of Example 11 can be obtained.

Example 23. As an example of a computer-readable recording medium, a program for causing the substrate processing apparatus to execute any of the methods of Examples 12 to 22 may be recorded. In this case, the same effect as that of the apparatus of Example 1 can be obtained. In the present specification, a computer-readable recording medium is a non-transitory computer recording medium (for example, various main storage devices or auxiliary storage devices) or a propagation signal (transitory computer recording medium) (. For example, a data signal that can be provided via a network) may be included.

1 ... Substrate processing device, 10 ... Processing unit, 20 ... Rotation holding section, 21 ... Rotating section, 23 ... Holding section, 24, 25 ... Heating section, 30 ... Chemical solution supply section, 40 ... Rinse solution supply section, 50 ... Drive Unit, 60 ... Auxiliary supply unit, 70 ... Measurement unit, 71 ... Measurement head, 80 ... Drive unit, 82 ... Drive mechanism (drive unit), 90 ... Chemical solution supply unit (another chemical supply unit), Ctrl ... Controller (control) Part), F ... film (another film), G ... gap, L1 ... etching solution, L2 ... rinsing solution, M2 ... storage unit, RM ... recording medium, W ... substrate (subsequent substrate), Wa ... surface.

Claims (23)

1. A rotation holding unit configured to hold and rotate a substrate having a film formed on its surface,
   A chemical solution supply unit configured to supply an etching solution to the surface of the substrate during rotation of the substrate by the rotation holding unit.
   A rinse liquid supply unit configured to supply a rinse liquid to the surface of the substrate during rotation of the substrate by the rotation holding unit, and a rinse liquid supply unit.
   A measuring unit configured to measure the thickness of the film with the measuring head located near the surface of the substrate, and a measuring unit.
   A drive unit configured to move the measurement head horizontally with respect to the surface of the substrate during measurement by the measurement unit.
   A substrate processing apparatus including an auxiliary supply unit configured to supply a rinsing liquid to a gap between the measuring head and the surface of the substrate during measurement by the measuring unit and fill the gap with the rinsing liquid. ..
2. The apparatus according to claim 1, wherein the rinse liquid supply unit is configured to form a liquid film of the rinse liquid on the entire surface of the substrate during measurement by the measurement unit.
3. The device according to claim 1 or 2, wherein the rotation holding portion includes a holding portion configured to totally adsorb the back surface of the substrate.
4. The device according to any one of claims 1 to 3, wherein the measuring unit is configured to measure the thickness of the film with reference to the surface of the substrate.
5. The apparatus according to any one of claims 1 to 4, further comprising a heating unit configured to partially heat the substrate.
6. Further, another chemical solution supply unit configured to supply the etching solution to a region other than the central portion of the surface of the substrate during the rotation of the substrate by the rotation holding unit is provided.
   The invention according to any one of claims 1 to 5, wherein the chemical solution supply unit is configured to supply an etching solution to a central portion of the surface of the substrate while the substrate is rotated by the rotation holding unit. Equipment.
7. With more control
   The control unit
   While controlling the rotation holding section so as to hold and rotate the substrate, the chemical solution supply section is controlled so as to supply the etching solution to the surface of the substrate, and the film is formed based on predetermined processing conditions. The first process of etching and
   After the first treatment, the rinse liquid supply unit and the rinse liquid supply unit and the rinse liquid supply unit so as to supply the rinse liquid to the surface of the substrate and the gap, respectively, while controlling the rotation holding unit so as to hold and rotate the substrate. The second process for controlling the auxiliary supply unit and
   While controlling the drive unit so as to move the measuring head horizontally with respect to the surface of the substrate while supplying the rinse liquid in the second treatment and rotating the substrate, the membrane of the membrane is controlled. A third process that controls the measuring unit to measure the thickness,
   The apparatus according to any one of claims 1 to 6, wherein the fourth process of updating the processing conditions based on the measured value of the film thickness is performed.
8. The control unit controls the rotation holding unit so as to hold and rotate the subsequent substrate on which another film is formed on the surface, and the chemical solution so as to supply the etching solution to the surface of the succeeding substrate. 7. According to claim 7, the supply unit is controlled to further perform a fifth process of etching the other film based on the process conditions after being updated in the fourth process. The device described.
9. The control unit
   A sixth process for determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value, and
   When it is determined that the measured value of the film thickness exceeds the target value, the etching solution is supplied to the surface of the substrate while controlling the rotation holding portion so as to hold and rotate the substrate again. The apparatus according to claim 7 or 8, wherein the chemical liquid supply unit is controlled so as to further perform a seventh process of etching the film.
10. In the seventh process, when it is determined that the measured value of a part of the thickness of the film exceeds the target value, the rotation holding portion is controlled so as to hold and rotate the substrate. The apparatus according to claim 9, wherein the chemical solution supply unit is controlled so as to supply the etching solution to the surface of the substrate, and the part of the film is etched.
11. Control unit and
    Further comprising a storage unit configured to store a plurality of processing conditions for etching the film.
    The control unit
    A second that controls the rinse liquid supply unit and the auxiliary supply unit so as to supply the rinse liquid to the surface of the substrate and the gap, respectively, while controlling the rotation holding unit so as to hold and rotate the substrate. 8 processing and
    While controlling the drive unit so as to move the measuring head horizontally with respect to the surface of the substrate while supplying the rinse liquid in the eighth treatment and rotating the substrate, the membrane of the membrane is controlled. A ninth process that controls the measuring unit to measure the thickness,
    A tenth process of determining one process condition from the plurality of process conditions based on the measured value of the film thickness, and the tenth process.
    While controlling the rotation holding unit so as to hold and rotate the substrate, the chemical solution supply unit is controlled so as to supply the etching solution to the surface of the substrate, and the determination is made in the tenth process. The apparatus according to any one of claims 7 to 10, further performing an eleventh process of etching the film based on one process condition.
12. The first step of supplying an etching solution to the surface of the substrate while rotating the substrate on which the film is formed on the surface and etching the film based on predetermined processing conditions.
    The second step of arranging the measurement head of the measurement unit near the surface of the substrate, and
    A third step of supplying the rinse liquid to the surface of the substrate and the gap between the measuring head and the surface of the substrate while rotating the substrate.
    A fourth step, in which the thickness of the film is measured while the measuring head is moved horizontally with respect to the surface of the substrate while the rinse liquid is being supplied and the substrate is rotating in the third step. Substrate processing method including steps.
13. The method according to claim 12, wherein the second step comprises supplying the rinse liquid to the surface of the substrate so that a liquid film of the rinse liquid is formed on the entire surface of the substrate.
14. The method according to claim 12, wherein the fourth step includes measuring the thickness of the film by the measuring unit in a state where the back surface of the substrate is totally adsorbed.
15. The method according to any one of claims 12 to 14, wherein the fourth step includes measuring the thickness of the film by the measuring unit with reference to the surface of the substrate.
16. The method according to any one of claims 12 to 15, wherein the first step comprises etching the film in a state where the substrate is partially heated.
17. The first step according to any one of claims 12 to 16, wherein the first step comprises supplying an etching solution to a central portion of the surface of the substrate and a region other than the central portion of the surface of the substrate, respectively. the method of.
18. 12. The fifth step further comprises updating the processing conditions based on the measured values obtained by measuring the thickness of the film etched in the first step in the fourth step. The method according to any one of 17 to 17.
19. While rotating the subsequent substrate on which another film is formed on the surface, the etching solution is supplied to the surface of the subsequent substrate, and the difference is based on the processing conditions after being updated in the fifth step. 18. The method of claim 18, further comprising a sixth step of etching the film.
20. A seventh step of determining whether or not the measured value of the film thickness is equal to or less than a predetermined target value, and
    When it is determined that the measured value of the thickness of the film exceeds the target value, the eighth step of etching the film by supplying the etching solution to the surface of the substrate while rotating the substrate again. The method of claim 18 or 19, further comprising:
21. In the eighth step, when it is determined that the measured value of the thickness of a part of the film exceeds the target value, the etching solution is supplied to the surface of the substrate while rotating the substrate. 20. The method of claim 20, comprising etching the portion of the film.
22. One from a plurality of processing conditions for etching the film, based on the measured values obtained by measuring the thickness of the film before being etched in the first step in the fourth step. Further including a ninth step of determining the processing conditions,
    In the first step, the etching solution is supplied to the surface of the substrate while rotating the substrate, and the film is etched based on the one processing condition determined in the ninth step. The method according to any one of claims 12 to 21, including the method according to any one of claims 12 to 21.
23. A computer-readable recording medium on which a program for causing a substrate processing apparatus to execute the method according to any one of claims 12 to 22 is recorded.

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