JP7353079B2 - Substrate processing equipment - Google Patents

Description

The technology disclosed in this specification relates to a substrate processing apparatus and a substrate processing method.

2. Description of the Related Art Conventionally, in manufacturing processes for substrates such as semiconductor substrates, various processes (substrate processing) have been performed on the substrate using a substrate processing apparatus. In this treatment, a treatment liquid for treating the substrate is used (see, for example, Patent Document 1).

JP 2017-11015 Publication

In substrate processing, if a processing liquid gets around to the lower surface (back surface) of a substrate being processed, unintended deterioration may occur. In Patent Document 1, by spraying gas onto the lower surface of the substrate, the processing liquid is prevented from going around.

However, with the technique disclosed in Patent Document 1, if the pressure of the gas blown onto the lower surface of the substrate is uneven, it may not be possible to sufficiently suppress the wraparound of the processing liquid.

The technology disclosed in this specification was developed in view of the problems described above, and aims to provide a technology that effectively suppresses the flow of processing liquid to the lower surface of a substrate. It is something.

A first aspect of the technology disclosed in the present specification includes a holding part for rotatably holding a substrate, a rotation drive part for rotating the holding part, surrounding the holding part in a plan view, and a facing plate facing the substrate, a moving part connected to the facing plate and for moving the facing plate toward or away from the substrate, and a control for controlling the operation of the moving part. and an adjustment section for adjusting a connection distance between the moving section and the opposing plate, the opposing plate being provided on the inside in the radial direction and connecting at least the substrate and the opposing plate. a first gas supply section for supplying gas between the first and second gas supply sections; and at least one displacement portion having a shorter distance from the substrate toward the outside in the direction.
A second aspect of the technology disclosed herein includes a holding part for rotatably holding a substrate, a rotation drive part for rotating the holding part, surrounding the holding part in a plan view, and a facing plate facing the substrate, the facing plate being provided on the inside in the radial direction, and having a first gas supply for supplying gas between at least the substrate and the facing plate. and a surface facing the substrate on the outer side in the radial direction than the first gas supply section, and the distance between the part on the outside in the radial direction and the substrate is longer than on the inside in the radial direction. and at least one short displacement portion, and the opposing plate further includes an end cleaning liquid discharge portion provided along a radially outer side surface for discharging cleaning liquid to an end of the substrate.

A third aspect of the technology disclosed herein is related to the first or second aspect, and the opposing plate is located between the substrate and the opposing plate on the outer side of the displacement portion in the radial direction. The apparatus further includes a second gas supply section for supplying gas to the gas.

A fourth aspect of the technology disclosed in this specification relates to any one of the first to third aspects, and a plurality of the displacement portions are provided in a radial direction of the opposing plate.

A fifth aspect of the technology disclosed in this specification is related to any one of the first to fourth aspects, and the displacement portion has a stepped shape extending in the circumferential direction of the opposing plate.

A sixth aspect of the technology disclosed in the present specification is related to any one of the first to fifth aspects, wherein the first gas supply section supplies the gas toward the holding section. do.

A seventh aspect of the technology disclosed in the present specification is related to any one of the first to sixth aspects, and the first gas supply section is a radially inner side surface of the opposing plate. The opposing plate further includes a protrusion provided on a radially inner side surface and closer to the substrate than the first gas supply section.

An eighth aspect of the technology disclosed herein is related to the second aspect, and includes a moving unit coupled to the opposing plate and for moving the opposing plate closer to or away from the substrate. , and a control section for controlling the operation of the moving section.

A ninth aspect of the technology disclosed in the present specification is related to the eighth aspect, and further includes an adjustment part for adjusting the connection distance between the moving part and the opposing plate.

A tenth aspect of the technology disclosed in the present specification is related to the first, eighth , or ninth aspect, and further includes an imaging section for imaging the substrate, and the control section is configured to take an image by the imaging section. The operation of the moving unit is controlled based on the shape of the substrate in a side view in the captured image.

An eleventh aspect of the technology disclosed in the present specification is related to any one of the first and eighth to tenth aspects, and includes a chemical liquid supply unit for supplying a chemical liquid to the substrate; The control unit further includes a cleaning liquid supply unit for supplying a cleaning liquid to the substrate, and the control unit controls the distance between the opposing plate and the substrate while the chemical liquid is being supplied by the chemical liquid supply unit. The operation of the moving unit is controlled so that the distance between the opposing plate and the substrate becomes longer while the cleaning liquid is being supplied by the cleaning liquid supplying unit.

A twelfth aspect of the technology disclosed herein is related to the first aspect, and the opposing plate is provided along a radially outer side surface, and the opposing plate is configured to apply a cleaning liquid to an end of the substrate. The apparatus further includes an end cleaning liquid discharge part for discharging the liquid.
A thirteenth aspect of the technology disclosed herein includes a holding part for rotatably holding a substrate, a rotation drive part for rotating the holding part, surrounding the holding part in a plan view, and a facing plate facing the substrate, the facing plate being provided on the inside in the radial direction, and having a first gas supply for supplying gas between at least the substrate and the facing plate. and a surface facing the substrate on the outer side in the radial direction than the first gas supply section, and the distance between the part on the outside in the radial direction and the substrate is longer than on the inside in the radial direction. A stepped portion extending in the circumferential direction of the opposing plate so as to be shorter, and extending radially outward from the stepped portion to an end of the substrate, and is sandwiched between the upper surface of the opposing plate and the lower surface of the substrate. A second gas supply unit is provided for supplying gas upward in the vertical direction to the gap region, and the width of the gap region in the vertical direction is 0.1 mm or more and 1.0 mm or less.

According to the first to thirteenth aspects of the technology disclosed in the present specification, the pressure of the gas supplied from the first gas supply section is uniform inside the displacement section in the radial direction, and further, the pressure is uniform. It is discharged to the outside of the displacement part in the radial direction in a uniform state. Therefore, by discharging the gas with uniform pressure, it is possible to effectively suppress the processing liquid from flowing around to the lower surface of the substrate.

In addition, objects, features, aspects, and advantages related to the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

1 is a diagram schematically showing an example of a configuration of a substrate processing system according to an embodiment. 1 is a diagram schematically showing an example of the configuration of a substrate processing apparatus in a substrate processing system according to an embodiment. FIG. 2 is a cross-sectional view schematically showing an example of the configuration of a back shielding plate and its surroundings in a substrate processing apparatus according to an embodiment. FIG. 3 is another cross-sectional view schematically showing an example of the configuration of a back shielding plate and its surroundings in the substrate processing apparatus according to the embodiment. FIG. 3 is a perspective view showing an example of a spin chuck and a back blocking plate with no substrate placed thereon. FIG. 3 is a cross-sectional view showing an example of the configuration of a connecting screw portion in the substrate processing apparatus according to the embodiment. FIG. 7 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back shielding plate in the substrate processing apparatus according to the embodiment. FIG. 7 is a perspective view showing another example of the configuration of the outer edge portion of the back shielding plate in the substrate processing apparatus according to the embodiment. FIG. 7 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back shielding plate in the substrate processing apparatus according to the embodiment. FIG. 2 is a functional block diagram showing an example of a connection relationship between each element of the substrate processing system and a control unit. 3 is a flowchart showing the operation of the substrate processing system according to the embodiment. FIG. 3 is a diagram illustrating an example of a state in a processing step of the substrate processing apparatus according to the embodiment. FIG. 3 is a diagram illustrating an example of a state in a processing step of the substrate processing apparatus according to the embodiment. FIG. 3 is a diagram illustrating an example of a state in a processing step of the substrate processing apparatus according to the embodiment. FIG. 7 is a cross-sectional view schematically showing a modification of the stepped portion of the back shielding plate. FIG. 7 is a cross-sectional view schematically showing another modification of the step portion in the back shielding plate.

Embodiments will be described below with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are merely examples, and not all of them are necessarily essential features for the embodiments to be implemented.

Note that the drawings are shown schematically, and for convenience of explanation, structures are omitted or simplified as appropriate in the drawings. Further, the mutual relationship between the sizes and positions of the structures shown in different drawings is not necessarily described accurately and may be changed as appropriate. Further, even in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description below, when a component is described as "comprising," "includes," or "has," unless otherwise specified, it is an exclusive term that excludes the presence of other components. It's not an expression.

In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms may not be used to facilitate understanding of the content of the embodiments. They are used for convenience and are not limited to the order that can occur based on these ordinal numbers.

In addition, in the explanations below, expressions that indicate equal states, such as "same", "equal", "uniform", or "homogeneous", do not mean strictly equal states, unless otherwise specified. This shall include cases in which there is a difference in tolerance or in the range in which the same level of function can be obtained.

In addition, in the explanations below, unless otherwise specified, expressions such as "moving the object in a specific direction" refer to the case where the object is moved parallel to the specific direction, and when the object is moved in a specific direction. This includes the case where the image is moved in a direction having a component in the specific direction.

In addition, in the descriptions below, specific positions and directions such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back" are referred to. Even if terms with different meanings are used, these terms are used for convenience to make it easier to understand the content of the embodiments, and have no relation to the direction in which they are actually implemented. It's something you don't do.

<Embodiment>
Hereinafter, a substrate processing system, a substrate processing apparatus, and a substrate processing method according to the present embodiment will be described.

<About the configuration of the substrate processing system>
FIG. 1 is a diagram schematically showing an example of the configuration of a substrate processing system according to the present embodiment. Note that, in order to make the configuration easier to understand, some components may be omitted or simplified in the drawings.

The substrate processing system 1 is a single-wafer processing system that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing system 1 performs various processing on the substrate W, such as cleaning processing or etching processing.

As an example shown in FIG. 1, the substrate processing system 1 includes an indexer section 2 and a processing section 3 in this order in the positive direction of the X-axis.

Further, the processing section 3 includes a transport module 3A and a processing module 3B in this order toward the positive direction of the X-axis.

<Indexer section>
The indexer section 2 includes a substrate container 21 that can accommodate a plurality of substrates W in a stacked state, a stage 22 that supports the substrate container 21, and receives unprocessed substrates W from the substrate container 21 and processes them. An indexer robot 23 that transfers the substrate W that has been processed in section 3 to the substrate container 21 is provided.

Although the number of stages 22 is one in the example of FIG. 1 for simplicity, a larger number may be arranged in the Y-axis direction.

The substrate container 21 may be a front opening unified pod (FOUP) that stores the substrate W in a sealed state, a standard mechanical interface (SMIF) pod, an open cassette (OC), or the like. .

The indexer robot 23 includes, for example, a base portion 23A, a multi-joint arm 23B, and two hands 23C and 23D that are spaced apart from each other in the vertical direction.

The base portion 23A is fixed to, for example, a frame that defines the outer shape of the indexer section 2 of the substrate processing system 1.

The multi-joint arm 23B is composed of a plurality of arm parts that are rotatable along a horizontal plane and are rotatably connected to each other, and the angle between the arm parts is adjusted at the joint part where the arm parts are joined. By changing this, the arm portion is configured to be bendable and extensible.

Further, the base end portion of the multi-joint arm 23B is coupled to the base portion 23A so as to be rotatable around a vertical axis. Further, the multi-joint arm 23B is coupled to the base portion 23A so as to be movable up and down.

The hand 23C and the hand 23D are each configured to be able to hold one substrate W.

The indexer robot 23 carries out one unprocessed substrate W from the substrate container 21 held on the stage 22 using, for example, a hand 23C. Then, the indexer robot 23 passes the substrate W to a transport mechanism 31 (described later) in the transport module 3A from the negative direction of the X-axis.

Furthermore, the indexer robot 23 receives one processed substrate W from the transport mechanism 31 using, for example, the hand 23D. Then, the indexer robot 23 stores the substrate W in the substrate container 21 held on the stage 22.

<Processing section>
The transport module 3A in the processing section 3 includes a transport mechanism 31 that can transport one or more substrates W while holding them in a horizontal position.

The transport mechanism 31 may move, for example, in a cylindrical transport path surrounded by partition walls (not shown here) formed along the XZ plane and the XY plane. Moreover, the conveyance mechanism 31 may be guided by a rail extending in the X-axis direction to reciprocate.

The substrate W is transported by the transport mechanism 31 between a position in the negative direction of the X-axis near the indexer section 2 and a position in the positive direction of the X-axis near a transport robot 33 (described later).

The processing module 3B in the processing section 3 includes a transport robot 33 that transports the substrate W, a plurality of substrate processing apparatuses 100A, 100B, and a substrate processing apparatus that perform prescribed processing on unprocessed substrates W supplied from the transport mechanism 31. and a device 100C.

The transfer robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support 33E to which these components are attached via a connector 33F and extends in the vertical direction.

The horizontal drive unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal drive unit 33A includes a stage 133A, a horizontal slider 133B that reciprocates in the horizontal direction on the upper surface of the stage 133A, and a horizontal motor 133C that moves the horizontal slider 133B.

A linearly extending rail (not shown here) is provided on the upper surface of the stage 133A, and the moving direction of the horizontal slider 133B is regulated by the rail. Movement of the horizontal slider 133B is realized, for example, by a known mechanism such as a linear motor mechanism or a ball screw mechanism.

A hand 33C and a hand 33D are provided at the tip of the horizontal slider 133B. When the horizontal slider 133B is moved along the rail by the horizontal motor 133C, the hands 33C and 33D can move forward and backward in the horizontal direction. In other words, the horizontal drive unit 33A moves the hand 33C and the hand 33D horizontally away from and toward the support 33E.

The horizontal drive unit 33A includes a rotation motor 133D that rotates the stage 133A around a rotation axis Z1 along the vertical direction. The rotation motor 133D allows the hand 33C and the hand 33D to rotate around the rotation axis Z1 within a range that does not interfere with the support column 33E.

The vertical drive section 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a vertically extending rail (not shown here) provided on the support column 33E.

The vertical motor 133H reciprocates the vertical slider 133G in the vertical direction along the rail. Movement of the vertical slider 133G is realized, for example, by a known mechanism such as a linear motor mechanism or a ball screw mechanism.

Connector 33F connects vertical slider 133G and stage 133A, and supports stage 133A from below. When the vertical motor 133H moves the vertical slider 133G, the stage 133A moves in the vertical direction. This allows the hand 33C and the hand 33D to move up and down in the vertical direction.

Note that it is not essential for the horizontal drive unit 33A to move the hand 33C and the hand 33D in parallel to the horizontal direction, and the hand 33C and the hand 33D may be moved in a composite direction of the horizontal direction and the vertical direction. That is, "to move in the horizontal direction" means to move in a direction that has a horizontal component.

Similarly, it is not essential for the vertical drive unit 33B to move the hand 33C and the hand 33D in parallel to the vertical direction, and the hand 33C and the hand 33D may be moved in a composite direction of the vertical direction and the horizontal direction. That is, "moving in the vertical direction" means moving in a direction that has a vertical component.

The transport robot 33 transports one unprocessed substrate W held by the transport mechanism 31 using, for example, a hand 33C. Then, the transfer robot 33 places the substrate W on the upper surface of a spin base 51A (described later) in the substrate processing apparatus 100A from, for example, the negative direction of the X-axis.

Further, the transfer robot 33 receives one processed substrate W from the substrate processing apparatus 100A, the substrate processing apparatus 100B, or the substrate processing apparatus 100C using, for example, the hand 33D. The transport robot 33 then passes the substrate W to the transport mechanism 31.

The substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are stacked in order in the positive direction of the Z axis, and constitute a processing tower TW.

Note that although the number of substrate processing apparatuses is three in the example of FIG. 1 for simplicity, it may be more than three.

Further, in FIG. 1, the substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are shown to be located in the positive direction of the X-axis of the transfer robot 33, but the substrate processing apparatus 100A, the substrate processing apparatus 100B The position where the substrate processing apparatus 100C is placed is not limited to this case, and may be placed, for example, in any of the X-axis positive direction, Y-axis positive direction, or Y-axis negative direction of the transfer robot 33. .

<About the configuration of the substrate processing equipment>
FIG. 2 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 100A in the substrate processing system according to the present embodiment. Note that the configurations of the substrate processing apparatus 100B and the substrate processing apparatus 100C are also similar to those shown in the example shown in FIG.

The substrate processing apparatus 100A is a single-wafer processing apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 100A performs fluid processing on the substrate W using a processing liquid (that is, a processing liquid including a chemical solution, a cleaning liquid, or a rinsing liquid) or a gas, a process using electromagnetic waves such as ultraviolet rays, or a physical cleaning process. (for example, brush cleaning or spray nozzle cleaning).

The substrates to be processed include, for example, semiconductor substrates, flat panel display (FPD) substrates such as liquid crystal display devices or organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. These include substrates, photomask substrates, ceramic substrates, printed circuit boards, and solar cell substrates.

As an example is shown in FIG. 2, the substrate processing apparatus 100A includes a box-shaped processing chamber 50 having an internal space, and a center portion of the substrate W while holding one substrate W in a horizontal position within the processing chamber 50. A spin chuck 51 rotates the substrate W around a vertical rotation axis Z passing through the substrate W, a back blocking plate 170 disposed opposite to the bottom surface of the substrate W, and a spin chuck 51 that rotates the substrate W around a vertical rotation axis Z passing through the substrate W; A housing 171 that covers the spin chuck 51 and the moving unit 190, and a cylindrical processing cup 511 that surrounds the housing 171 around the rotation axis Z of the substrate W.

Here, "opposing" indicates, for example, a state in which two surfaces are facing each other, and another object may be present between the facing surfaces.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B for carrying the substrate W into and out of the processing chamber 50 is formed in the partition wall 50A.

The opening 50B is opened and closed by a shutter 50C. The shutter 50C is moved by a shutter lifting mechanism (not shown here) into a closed position (indicated by a chain double-dashed line in FIG. 2) covering the opening 50B and an open position (indicated by a solid line in FIG. 2) in which the opening 50B is opened. (indicated by ).

When loading and unloading the substrate W, the transport robot accesses the inside of the processing chamber 50 through the opening 50B using a robot hand. Thereby, an unprocessed substrate W can be placed on the upper surface of the spin chuck 51, or a processed substrate W can be removed from the spin chuck 51.

As an example is shown in FIG. 2, the spin chuck 51 includes a disk-shaped spin base 51A that vacuum-chucks the lower surface of the substrate W in a horizontal position on the upper surface, and a rotating shaft 51C that extends downward from the center of the spin base 51A. and a spin motor 51D that rotates the substrate W that is attracted to the spin base 51A by rotating the rotating shaft 51C.

The upper surface of the spin base 51A is a flat surface made of, for example, porous ceramics. However, grooves or irregularities may be formed on the upper surface of the spin base 51A within a range where the substrate W can be attracted.

The back shielding plate 170 is provided in an annular shape so as to surround the spin chuck 51 in a plan view. Further, the upper surface of the back blocking plate 170 faces the lower surface of the substrate W held by the spin base 51A. Note that a region sandwiched between the upper surface of the back blocking plate 170 and the lower surface of the substrate W is defined as a gap region 180.

A step portion 170A is formed on the upper surface of the back blocking plate 170. In the stepped portion 170A, the distance between the upper surface of the back blocking plate 170 and the lower surface of the substrate W is shorter on the outer side in the radial direction than on the inner side in the radial direction.

Further, in FIG. 2, the back shielding plate 170 has a diameter slightly smaller than the substrate W, but the size of the back shielding plate 170 is not limited to this, and is approximately the same size as the substrate W. Alternatively, it may be larger than the substrate W.

Furthermore, in this embodiment, the back shielding plate 170 is independent of the spin chuck 51 and does not rotate around the rotation axis Z. It may be rotatable around an axis.

The moving unit 190 supports the back blocking plate 170 and moves the back blocking plate 170 up and down in the vertical direction. The moving unit 190 is provided around the spin chuck 51 in plan view, and is moved up and down in the vertical direction by a motor (not shown).

By the operation of the moving unit 190, the upper surface of the back shielding plate 170 is moved to a position where it can contact the lower surface of the substrate W held on the spin base 51A (referred to as an upper position) and a position where the upper surface of the back shielding plate 170 and the substrate W are in contact with each other. It moves up and down between a position (referred to as a lower position, etc.) where the gap region 180 sandwiched between the lower surface and the lower surface is sufficiently widened. Here, the operation of the moving section 190 is controlled by a control section described below.

Note that in this embodiment, the rear shielding plate 170 is moved by the operation of the moving unit 190, and the width of the gap region 180 in the Z direction is thereby changed. The width of the gap area 180 in the Z direction may be changed by moving the gap area 180 relative to the back blocking plate 170.

As an example is shown in FIG. 2, the substrate processing apparatus 100A includes a chemical liquid nozzle 52 that discharges a chemical liquid toward the upper surface of a substrate W held by a spin chuck 51, and a chemical liquid nozzle 52 attached to the tip. A chemical liquid arm 152, a chemical liquid tank 53 that stores the chemical liquid to be supplied to the chemical liquid nozzle 52, a chemical liquid piping 54 that guides the chemical liquid in the chemical liquid tank 53 to the chemical liquid nozzle 52, and a chemical liquid pipe 54 that sends the chemical liquid in the chemical liquid tank 53 to the chemical liquid piping 54. It includes a liquid feeding device 55 (for example, a pump) and a chemical liquid valve 56 that opens and closes the inside of the chemical liquid piping 54.

The chemical liquid arm 152 includes a rotational drive source 152A, a shaft body 152B, and an arm portion 152C whose one end is fixed to the upper end of the shaft body 152B and the chemical liquid nozzle 52 is attached to the other end.

In the chemical liquid arm 152, the chemical liquid nozzle 52 attached to the tip of the arm part 152C can move along the upper surface of the substrate W held by the spin chuck 51 by rotating the shaft body 152B by the rotational drive source 152A. becomes. That is, the chemical liquid nozzle 52 attached to the tip of the arm portion 152C becomes movable in the horizontal direction. Here, the drive of the rotational drive source 152A is controlled by a control section that will be described later.

Further, the substrate processing apparatus 100A includes a circulation pipe 57 that connects the chemical liquid pipe 54 and the chemical liquid tank 53 on the upstream side of the chemical liquid valve 56 (that is, on the chemical liquid tank 53 side), and a circulation valve that opens and closes the inside of the circulation pipe 57. 58, and a temperature adjustment device 59 that adjusts the temperature of the chemical liquid flowing through the circulation pipe 57.

Opening and closing of the chemical liquid valve 56 and the circulation valve 58 are controlled by a control section described below. When the chemical liquid in the chemical liquid tank 53 is supplied to the chemical liquid nozzle 52, the chemical liquid valve 56 is opened and the circulation valve 58 is closed. In this state, the chemical liquid sent from the chemical liquid tank 53 to the chemical liquid piping 54 by the liquid sending device 55 is supplied to the chemical liquid nozzle 52.

On the other hand, when the supply of the chemical liquid to the chemical liquid nozzle 52 is stopped, the chemical liquid valve 56 is closed and the circulation valve 58 is opened. In this state, the chemical liquid sent from the chemical liquid tank 53 to the chemical liquid pipe 54 by the liquid sending device 55 returns into the chemical liquid tank 53 through the circulation pipe 57. Therefore, during the supply stop period in which the supply of the chemical liquid to the chemical liquid nozzle 52 is stopped, the chemical liquid continues to circulate through the circulation path configured by the chemical liquid tank 53, the chemical liquid pipe 54, and the circulation pipe 57.

The temperature adjustment device 59 adjusts the temperature of the chemical liquid flowing inside the circulation pipe 57. Therefore, the chemical liquid in the chemical liquid tank 53 is heated in the circulation path while the supply is stopped, and is maintained at a temperature higher than room temperature.

Further, the opening degree of the chemical liquid valve 56 can be adjusted so that a minute amount of chemical liquid can be discharged from the chemical liquid nozzle 52 for pre-dispensing. Further, a chemical liquid recovery member (not shown here) is arranged near the chemical liquid nozzle 52, and the chemical liquid pre-dispensed from the chemical liquid nozzle 52 is recovered.

Further, as an example is shown in FIG. 2, the substrate processing apparatus 100A includes a rinsing liquid nozzle 60 that discharges a rinsing liquid toward the upper surface of the substrate W held by the spin chuck 51, and a rinsing liquid nozzle 60 having a distal end. a rinsing liquid arm 160 attached to the rinsing liquid arm 160, a rinsing liquid piping 61 that supplies rinsing liquid from a rinsing liquid supply source (not shown here) to the rinsing liquid nozzle 60, and a rinsing liquid piping 61 that supplies the rinsing liquid from the rinsing liquid piping 61 to the rinsing liquid nozzle 60. and a rinse liquid valve 62 that switches between supplying and stopping the supply of rinse liquid to the rinsing liquid. As the rinsing liquid, DIW (deionized water) or the like is used.

The rinse liquid arm 160 includes a rotational drive source 160A, a shaft body 160B, and an arm portion 160C whose one end is fixed to the upper end of the shaft body 160B and the rinse liquid nozzle 60 is attached to the other end.

In the rinse liquid arm 160, the shaft body 160B is rotated by the rotational drive source 160A, so that the rinse liquid nozzle 60 attached to the tip of the arm portion 160C is moved along the upper surface of the substrate W held by the spin chuck 51. It becomes possible to move. That is, the rinse liquid nozzle 60 attached to the tip of the arm portion 160C becomes movable in the horizontal direction. Here, the drive of the rotational drive source 160A is controlled by a control section that will be described later.

After the chemical liquid is supplied to the substrate W by the chemical liquid nozzle 52, the rinsing liquid is supplied to the substrate W from the rinse liquid nozzle 60, so that the chemical liquid adhering to the substrate W and the back shielding plate 170 can be washed away.

Further, as illustrated in FIG. 2, the substrate processing apparatus 100A includes a cleaning liquid nozzle 64 for discharging the cleaning liquid toward a predetermined portion (for example, the spin base 51A) inside the processing chamber 50, and a cleaning liquid supply source ( Here, a cleaning liquid piping 65 that supplies cleaning liquid from a pipe (not shown) to the cleaning liquid nozzle 64, and a cleaning liquid valve 66 that switches between supplying and stopping the supply of the cleaning liquid from the cleaning liquid piping 65 to the cleaning liquid nozzle 64 are provided. As the cleaning liquid, DIW (deionized water) or the like is used.

The cleaning liquid nozzle 64 is attached to the inner wall of the processing chamber 50. With the substrate W held on the spin chuck 51, the spin base 51A is rotated and cleaning liquid is discharged from the cleaning liquid nozzle 64.

Then, the cleaning liquid discharged from the cleaning liquid nozzle 64 bounces off the upper surface of the substrate W, and the cleaning liquid is scattered inside the processing chamber 50. By scattering the cleaning liquid in this manner, various parts (such as the back shielding plate 170 or the processing cup 511) arranged in the processing chamber 50 can be cleaned.

The processing cup 511 is provided so as to surround the spin chuck 51, and is moved up and down in the vertical direction by a motor (not shown). The upper part of the processing cup 511 moves up and down between an upper position where the upper end is above the substrate W held by the spin base 51A and a lower position where the upper end is below the substrate W or the substrate W.

The processing liquid splashed outward from the upper surface of the substrate W is received by the inner surface of the processing cup 511. The processing liquid received by the processing cup 511 is appropriately drained to the outside of the processing chamber 50 through a liquid drain port 513 provided at the bottom of the processing chamber 50 and inside the processing cup 511.

Furthermore, an exhaust port 515 is provided on the side of the processing chamber 50 . The atmosphere inside the processing chamber 50 is appropriately exhausted to the outside of the processing chamber 50 through the exhaust port 515 .

FIG. 3 is a cross-sectional view schematically showing an example of the configuration of the back shielding plate 170 and its surroundings in the substrate processing apparatus according to the present embodiment.

In FIG. 3, a spin chuck 51 that rotates the substrate W around the rotation axis Z while holding one substrate W in a horizontal position, a back shielding plate 170 disposed opposite to the lower surface of the substrate W, and A housing 171 that covers the chuck 51 and a processing cup 511 that surrounds the housing 171 around the rotation axis Z of the substrate W are shown. Note that the moving section 190 is not illustrated in the cross section.

The spin chuck 51 includes a disc-shaped spin base 51A that vacuum-chucks the lower surface of the substrate W, a rotating shaft 51C extending downward from the center of the spin base 51A, and a rotating shaft 51C that rotates the spin base 51A. It includes a spin motor 51D that rotates the attracted substrate W.

A step portion 170A is formed on the upper surface of the back blocking plate 170. The step portion 170A is formed to extend in the circumferential direction of the back blocking plate 170. The stepped portion 170A has a radially outer side (that is, a side farther away from the spin base 51A) than a radially inner side (that is, a side that is closer to the spin base 51A) than an upper surface of the back shielding plate 170 and a lower surface of the substrate W. In other words, the gap region 180 is narrow.

Furthermore, although the back blocking plate 170 surrounds the spin base 51A in plan view, a gap is formed between the spin base 51A and the back blocking plate 170. The back blocking plate 170 supplies gas (for example, N ₂ which is an inert gas) toward the gap, that is, the gas is supplied from the inner wall of the back blocking plate 170 facing the spin base 51A toward the spin base 51A. It includes a gas supply section 170B that sprays. The gas supply section 170B is provided radially inside the step section 170A.

The gas supply section 170B is formed with an annular gas flow path 1700A that is a flow path for the gas to be supplied, and is formed by penetrating the inner wall of the back blocking plate 170 from the gas flow path 1700A, and is configured to pass the gas in the gas flow path 1700A. It is provided with a gas supply hole 1700B which is a hole for spraying gas toward the spin base 51A. Note that in FIG. 3, the direction of gas sprayed from the gas supply hole 1700B is perpendicular to the spin base 51A; It may be tilted to the side or the opposite side.

Further, the gas supply unit 170B supplies, for example, N ₂ which is an inert gas at a rate of 100 L/min to 500 L/min. Here, the operation of the gas supply section 170B is controlled by a control section described below.

Further, in the back blocking plate 170, a protrusion 170C is formed on the inner wall of the back blocking plate 170 on the side closer to the substrate W than the gas supply hole 1700B (that is, on the upper side in FIG. 3). The distance between the inner wall of the back blocking plate 170 and the spin base 51A at the position where the protrusion 170C is formed is the distance between the inner wall of the back blocking plate 170 and the spin base 51A at the position where the protrusion 170C is not formed (for example, the position where the gas supply hole 1700B is formed). 170 and the spin base 51A.

Further, the back shielding plate 170 includes a gas supply section 170D that supplies gas (for example, N ₂ which is an inert gas) to the gap region 180 on the outer side of the stepped portion 170A in the radial direction.

The gas supply section 170D is formed with an annular gas flow path 1700C that is a flow path for the gas to be supplied, and is formed so as to penetrate from the gas flow path 1700C to the upper surface side of the back blocking plate 170, and is The gas supply hole 1700D is a hole for spraying gas toward the lower surface (back surface) of the substrate W. Note that in FIG. 3, the direction in which the gas is blown from the gas supply hole 1700D is vertically upward, but the direction may be inclined outward in the radial direction, for example.

Further, the gas supply unit 170D supplies, for example, N ₂ which is an inert gas at a rate of 100 L/min to 500 L/min. Further, a plurality of gas supply holes 1700D may be provided in the circumferential direction of the back blocking plate 170, and in that case, they are arranged at a pitch of 2 mm to 10 mm, for example. Here, the operation of the gas supply section 170D is controlled by a control section described below.

The back shielding plate 170 is made of, for example, polyvinylidene fluoride (PVDF), which has high chemical resistance.

Furthermore, an annular reinforcing ring 181 surrounding the spin base 51A is provided below the back blocking plate 170, similar to the back blocking plate 170. Further, below the reinforcing ring 181, an annular base ring 182 surrounding the spin base 51A, similar to the back blocking plate 170, is provided.

The reinforcing ring 181 and the base ring 182 are made of, for example, polyetheretherketone (PEEK).

The back blocking plate 170 includes a connecting screw portion 170E that penetrates from the top surface to the bottom surface of the back blocking plate 170 and connects the back blocking plate 170 and the reinforcing ring 181 (and the base ring 182).

Further, on the outer edge of the back blocking plate 170, there is an eaves portion 170F that extends radially outward from the upper end of the housing 171 located below the back blocking plate 170 and covers the upper end of the housing 171. It is formed.

By forming the eaves portion 170F, it is possible to suppress the atmosphere of the processing liquid generated during the processing of the substrate W from directly entering from below the back shielding plate 170. However, the processing liquid flows below the back shielding plate 170 from the gap between the eaves portion 170F and the upper end of the housing 171, and further from the discharge hole 171A provided in the housing 171 for discharging the processing liquid. There is a route through which the atmosphere of

FIG. 4 is another cross-sectional view schematically showing an example of the configuration of the back blocking plate 170 and its surroundings in the substrate processing apparatus according to the present embodiment.

In FIG. 4, the spin chuck 51, the back blocking plate 170, the housing 171, the processing cup 511, and the moving unit 190 that moves the back blocking plate 170 in the vertical direction (that is, the Z direction in FIG. 4) are shown. It is shown.

The moving part 190 includes a connecting part 190A connected to the reinforcing ring 181 and the base ring 182, a shaft 190B connected below the connecting part 190A and movable in the Z direction, and surrounding the shaft 190B and moving in the Z direction. It is provided with a spring 190C that can be expanded and contracted in the direction.

The shaft 190B is moved in the Z direction by a stepping motor (not shown) or the like. This allows the back shielding plate 170 to move in the Z direction, allowing it to approach or move away from the substrate W. Here, the operation of the shaft 190B is controlled by a control section that will be described later.

FIG. 5 is a perspective view showing an example of the spin chuck 51 and the back blocking plate 170 in a state where the substrate W is not placed.

In FIG. 5, the spin base 51A on the upper surface of the spin chuck 51 and the annular back blocking plate 170 surrounding the spin base 51A are shown.

FIG. 6 is a cross-sectional view showing an example of the configuration of the connecting screw portion 170E in the substrate processing apparatus according to the present embodiment. FIG. 6 is a sectional view corresponding to the circumferential cross section XX' of the back blocking plate 170 in FIG. 5. As shown in FIG.

As shown in an example in FIG. and the moving part 190 are connected.

The connecting screw portion 170E is an adjustment screw 1701B that is tightened to draw the back shielding plate 170 and the reinforcing ring 181 (and the base ring 182) together, or is pushed in between the reinforcing ring 181 and the base ring 182. It includes an adjustment screw 1701C that forms a gap, and a cap 1701A that covers the adjustment screw 1701B and the adjustment screw 1701C, respectively.

According to the above configuration, by adjusting the pushing degree of the adjusting screw 1701B and the tightening degree of the adjusting screw 1701C, the back shielding plate 170 and the movable portion are connected via the reinforcing ring 181 and the base ring 182. 190 (connection distance), the flatness of the back blocking plate 170 can be adjusted, and the distance to the substrate W (that is, the width of the gap region 180) can be controlled with high precision.

As described above, by controlling the distance between the substrate W and the back shielding plate 170 with high precision, the substrate W and the back shielding plate 170 can be kept in contact without contacting each other during chemical processing or drying processing, which will be described later. Since they can be brought close to each other with high accuracy, it is possible to suppress the chemical solution from going around to the lower surface of the substrate W, and to increase the degree of drying of the substrate W and the back shielding plate 170.

Here, the width of the gap region 180 is, for example, 0.1 mm or more and 1.0 mm or less. Further, it is assumed that the deviation from the horizontal posture due to warpage of the substrate W or the like is, for example, 0.3 mm or less.

FIG. 7 is a sectional view showing another example of the configuration of the outer edge portion of the back blocking plate 170 in the substrate processing apparatus according to the present embodiment.

As shown in an example in FIG. 7, a cleaning liquid discharge part 170G that discharges cleaning liquid toward the rear surface end of the substrate W may be provided at the outer edge of the back blocking plate 170. The cleaning liquid discharge portions 170G may be provided at a plurality of locations in the circumferential direction of the back blocking plate 170. A cleaning liquid is supplied to the cleaning liquid discharge part 170G from a cleaning liquid supply source (not shown). As the cleaning liquid, DIW (deionized water) or the like is used.

In the example of FIG. 7, the cleaning liquid discharge portion 170G is located radially inside the eaves portion 170F and radially outside the gas supply hole 1700D. Further, the cleaning liquid discharge part 170G is provided along the outer side surface of the back shielding plate 170, and the cleaning liquid discharged from the cleaning liquid discharge part 170G is delivered along the outer side surface of the back shielding plate 170 and at the rear surface edge of the substrate W. reach the department. The operation of the cleaning liquid discharge section 170G is controlled by a control section described below.

FIG. 8 is a perspective view showing another example of the configuration of the outer edge portion of the back blocking plate 170 in the substrate processing apparatus according to the present embodiment.

As an example is shown in FIG. 8, the cleaning liquid discharge part 170G is provided on the upper surface (slanted surface) of the eaves part 170F, and discharges the cleaning liquid vertically upward along the outer wall of the back shielding plate 170. The cleaning liquid discharge unit 170G mainly cleans the back end of the substrate W.

The cleaning liquid discharge section 170G discharges the cleaning liquid from a hole having a diameter of 0.5 to 2.0 mm (0.5 mm to 2.0 mm in diameter). Further, a plurality of cleaning liquid discharge parts 170G may be arranged in the circumferential direction on the outer edge of the back blocking plate 170, and in that case, they may be arranged, for example, in two to eight places at equal intervals.

FIG. 9 is a sectional view showing another example of the configuration of the outer edge portion of the back shielding plate 170 in the substrate processing apparatus according to the present embodiment.

As shown in an example in FIG. 9, an imaging unit 200 for measuring the distance between the lower surface of the substrate W and the upper surface of the back blocking plate 170 may be provided at the outer edge of the back blocking plate 170. good. The imaging unit 200 is, for example, a CMOS camera.

The imaging unit 200 images the shape of the rotating substrate W in a side view and the shape of the back blocking plate 170 in a side view multiple times from the outside in the radial direction of the back blocking plate 170, and further images the shape of the substrate W in a side view in each frame. The distance between the lower surface and the upper surface of the back blocking plate 170 is measured by image analysis. Then, the imaging unit 200 connects the substrate W so that the bottom surface of the substrate W and the top surface of the back blocking plate 170 do not come into contact at the timing when the distance between the bottom surface of the substrate W and the top surface of the back blocking plate 170 is minimized. The approachable distance to the back blocking plate 170 can be calculated with high accuracy. Further, the amount of distortion of the substrate W is specified based on the range of variation in the distance between the lower surface of the substrate W and the upper surface of the back blocking plate 170.

Note that the amount of distortion of the substrate W may be obtained from an external host computer or the like by the communication section 78, which will be described later, without depending on the imaging result of the imaging section 200.

FIG. 10 is a functional block diagram showing an example of the connection relationship between each element of the substrate processing system 1 and the control unit 7. As shown in FIG.

The hardware configuration of the control unit 7 is similar to that of a general computer. That is, the control unit 7 includes a central processing unit (CPU) 71 that performs various calculation processes, and a read-only memory (ROM) that is a read-only memory that stores basic programs. ) 72, a random access memory (RAM) 73 which is a read/write memory that stores various information, and a non-transitory storage section 74 that stores a control application (program) or data. Equipped with.

The CPU 71, ROM 72, RAM 73, and storage section 74 are connected to each other by bus wiring 75 and the like.

The control application or data may be provided to the control unit 7 in a state recorded on a non-transitory recording medium (for example, a semiconductor memory, an optical medium, a magnetic medium, etc.). In this case, a reading device for reading the control application or data from the recording medium is preferably connected to the bus wiring 75.

Further, the control application or data may be provided to the control unit 7 from a server or the like via a network. In this case, it is preferable that a communication unit that performs network communication with an external device is connected to the bus wiring 75.

An input section 76 , a display section 77 , and a communication section 78 are connected to the bus wiring 75 . The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control section 7 via the input section 76 . The display section 77 is composed of a display device such as a liquid crystal monitor, and displays various information. The communication unit 78 communicates with an external host computer, etc., and receives information regarding the amount of drive of the motor, etc. in the moving unit 190.

The control unit 7 controls the operating units of each substrate processing apparatus (for example, a chemical liquid valve 56, a circulation valve 58, a rinsing liquid valve 62, a cleaning liquid valve 66, a shutter 50C, a spin motor 51D, a gas supply unit 170B, a gas supply unit 170D, shaft 190B, cleaning liquid discharge section 170G, imaging section 200, etc.), a drive section that drives the transport mechanism 31 (for example, a motor for reciprocating the transport mechanism 31, etc.), an actuating section of the indexer robot 23 (for example, a multi-joint arm) 23B, etc.), and the operating parts of the transfer robot 33 (for example, the horizontal motor 133C, rotation motor 133D, or vertical motor 133H, etc.), and controls their operations.

<About the operation of the substrate processing equipment>
Next, the operation of the substrate processing apparatus according to this embodiment will be described with reference to FIGS. 11 to 14. Here, FIG. 11 is a flowchart showing the operation of the substrate processing system according to this embodiment. Further, FIGS. 12, 13, and 14 are diagrams showing examples of the processing steps of the substrate processing apparatus according to the present embodiment.

As an example is shown in FIG. 11, first, the substrate W contained in the substrate container 21 is carried into one of the substrate processing apparatuses via the indexer robot 23, the transport mechanism 31, and the transport robot 33. Then, the substrate W is held by the spin chuck 51 (step ST1 in FIG. 11).

Next, a chemical treatment is performed (step ST2 in FIG. 11). In the chemical liquid treatment, the rotating substrate W is etched by ejecting the chemical liquid from the chemical liquid nozzle 52 under the control of the control unit 7 . For example, the substrate W is etched using fluoronitric acid, which is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO ₃ ).

Further, as an example is shown in FIG. 12, in the chemical liquid treatment, the width of the gap region 180 in the Z direction is radially outside of the stepped portion 170A (that is, the width of the gap region 180 in the Z direction is the narrowest). The moving unit 190 moves the back shielding plate 170 up and down under the control of the control unit 7 so that the distance is, for example, 0.1 mm or more and 1.0 mm or less at the position (portion). Further, in the chemical liquid treatment, the spin motor 51D is driven under the control of the control unit 7 so that the substrate W rotates at a rotation speed of, for example, 100 rpm or more and 2000 rpm or less.

In addition, in the chemical liquid processing, in order to suppress the chemical liquid from going around to the lower surface (back surface) of the substrate W, nitrogen (N ₂ ), etc. is introduced into the gap region 180 from the gas supply hole 1700B (see FIGS. 3 and 4) of inert gas is supplied at, for example, 100 L/min to 500 L/min. Note that after the gas supplied from the gas supply hole 1700B (see FIGS. 3 and 4) is blown onto the spin base 51A, a portion of the gas flows into the gap region 180 (in the upper direction of FIGS. 3 and 4). The other part flows below the back blocking plate 170 and into the housing 171 (downward in FIGS. 3 and 4).

Here, the gas supplied from the gas supply hole 1700B (see FIGS. 3 and 4) reaches the gap region 180 because the protrusion 170C is provided at a position closer to the substrate W than the gas supply hole 1700B. The rate at which it flows is suppressed, and on the contrary, the rate at which it flows below the back blocking plate 170 and into the casing 171 increases.

Furthermore, an inert gas such as nitrogen (N ₂ ) is also supplied from the gas supply hole 1700D into the gap region 180 (particularly to the end of the back surface of the substrate W) at a rate of, for example, 100 L/min to 500 L/min.

During chemical treatment, the cleaning liquid can also be discharged from the cleaning liquid discharge section 170G. As a result, the liquid film of the cleaning liquid from below the substrate W by the cleaning liquid discharge part 170G acts as a barrier, and the chemical liquid coming from above the substrate W is suppressed from entering radially inward from the back end of the substrate W.

Next, a cleaning process is performed (step ST3 in FIG. 11). In the cleaning process, the cleaning liquid is discharged from the cleaning liquid nozzle 64 under the control of the control unit 7, so that deposits on the substrate W, the back shielding plate 170, and the processing cup 511 can be washed away (see FIG. 13). reference). In the cleaning process, the width of the gap area 180 in the Z direction is radially outside of the stepped portion 170A (that is, the narrowest point in the Z direction of the gap area 180), and is larger than the width in the chemical solution process. The moving unit 190 moves the back shielding plate 170 up and down under the control of the control unit 7 so that the length is, for example, 1.5 mm to 5 mm.

Since the cleaning liquid discharged from the cleaning liquid nozzle 64 goes around to the lower surface (back surface) side of the substrate W, the cleaning liquid is also supplied to the back surface blocking plate 170.

As an example is shown in FIG. 13, in the cleaning process, the substrate W and the back blocking plate 170 are cleaned. At this time, the cleaning liquid can also be discharged from the cleaning liquid discharge section 170G. As a result, the liquid film of the cleaning liquid from below the substrate W by the cleaning liquid discharge portion 170G acts as a barrier, and the cleaning liquid coming from above the substrate W is suppressed from entering the inside of the substrate W in the radial direction from the back end. Furthermore, by discharging the cleaning liquid from the cleaning liquid discharging section 170G, it is possible to effectively remove the chemical liquid and the like on the lower surface of the substrate W, which cannot be removed by the cleaning liquid nozzle 64 alone.

In order to supply the cleaning liquid discharged vertically upward from the cleaning liquid discharge part 170G to the back end of the substrate W, the outer edge of the substrate W extends radially outward beyond the outer edge of the back blocking plate 170. is desirable. In the example of FIG. 13, the outer edge of the substrate W extends outward in the radial direction from the outer edge of the back blocking plate 170 by, for example, 0.5 mm to 3 mm.

Further, in the cleaning process, an inert gas such as nitrogen (N ₂ ) is supplied into the gap region 180 from the gas supply hole 1700B (see FIGS. 3 and 4) at a rate of, for example, 100 L to 500 L/min. Furthermore, an inert gas such as nitrogen (N ₂ ) is also supplied from the gas supply hole 1700D into the gap region 180 (particularly to the end of the back surface of the substrate W) at a rate of, for example, 100 L/min to 500 L/min.

Note that in the above-mentioned cleaning process, cleaning is performed with the cleaning liquid discharged from the cleaning liquid nozzle 64, but for example, in the rinsing process in which the rinsing liquid is discharged from the rinsing liquid nozzle 60, the rinsing liquid is supplied to the gap region 180. By doing so, the substrate W and the back shielding plate 170 may be cleaned.

Next, a drying process is performed (step ST4 in FIG. 11). In the drying process, the spin base 51A is rotated under the control of the control unit 7 to dry the substrate W and the back shielding plate 170.

Further, as an example is shown in FIG. 14, in the drying process, the control unit 7 controls the width of the gap region 180 in the Z direction to be, for example, 0.1 mm or more and 1.0 mm or less. The moving unit 190 moves the back blocking plate 170 up and down. In this state, the lower surface of the substrate W and the opposing upper surface of the back blocking plate 170 are close to each other.

Further, in the drying process, an inert gas such as nitrogen (N ₂ ) is supplied into the gap region 180 from the gas supply hole 1700B (see FIGS. 3 and 4) at a rate of, for example, 100 L to 500 L/min. Furthermore, an inert gas such as nitrogen (N ₂ ) is also supplied from the gas supply hole 1700D into the gap region 180 (particularly to the end of the back surface of the substrate W) at a rate of, for example, 100 L/min to 500 L/min.

In the drying process, the cleaning liquid adhering to the substrate W and the back shielding plate 170 is scattered by the rotation of the substrate W.

Specifically, the cleaning liquid adhering to the upper and lower surfaces of the substrate W is scattered from the outer edge of the substrate W to the periphery of the substrate W under the influence of centrifugal force generated by the rotation of the substrate W.

Further, the cleaning liquid adhering to both the lower surface of the substrate W and the upper surface of the back blocking plate 170 (that is, the cleaning liquid whose droplet size is larger than the width of the gap region 180 in the Z direction) is removed from the lower surface of the substrate W. Since the side in contact with the substrate W receives the centrifugal force generated by the rotation of the substrate W, the substrate W is pushed out to the outer edge of the substrate W, and is further scattered around the substrate W.

Further, the cleaning liquid adhering only to the upper surface of the back shielding plate 170 (that is, the cleaning liquid whose droplet size is smaller than the width of the gap area 180 in the Z direction) is removed from the outside in the system direction caused by the rotation of the substrate W. The atmosphere (including fine particles suspended in the gap region 180) is pushed toward the outer edge of the substrate W by the flow (for example, circumferential speed of 20 to 60 m/s) toward the periphery of the substrate W. scatter to.

In the center of the substrate W, the cleaning liquid adhering to the lower surface of the substrate W and the cleaning liquid adhering to the upper surface of the back blocking plate 170 are mainly supplied from the gas supply hole 1700B (see FIGS. 3 and 4). The inert gas is pushed out to the outer edge of the substrate W.

On the other hand, since the contribution of the centrifugal force generated by the rotation of the substrate W increases at the outer edge of the substrate W, it is possible to compensate for the weakening of the contribution of the inert gas supplied from the center of the back shielding plate 170. can.

Here, although it is desirable that all the cleaning liquid be removed in the drying process, this is not necessarily the case. Further, as shown in an example in FIG. 14, the cleaning liquid discharged from the cleaning liquid discharging section 170G may remain on the back blocking plate 170, but the cleaning liquid discharging section 170G is located along the outer surface of the back blocking plate 170. Therefore, the area where the cleaning liquid tends to remain is the outer surface of the back shielding plate 170. Therefore, even if the cleaning liquid remains, it is unlikely to affect the processing of the substrate W.

Then, the processed substrate W is removed from the spin chuck 51, and further, the substrate W is carried out from the substrate processing apparatus, and the operation is completed (step ST5 in FIG. 11). Note that when carrying out the substrate W, the moving unit 190 moves the back blocking plate 170 such that the distance between the bottom surface of the substrate W and the top surface of the back blocking plate 170 is, for example, 7 mm to 15 mm.

<About the step part>
As described above, in the chemical treatment, the cleaning treatment, and the drying treatment, gas is supplied from at least the gas supply hole 1700B, so that the gas flows from the radially inner side to the radially outer side of the gap region 180.

In that case, due to the stepped portion 170A formed on the upper surface of the back blocking plate 170, the gap region 180 radially outside the stepped portion 170A has a width in the Z direction that is wider than the gap region 180 radially inner than the stepped portion 170A. is getting narrower.

Then, the pressure of the gas supplied from the gas supply hole 1700B becomes uniform inside the stepped portion 170A in the radial direction, and the gas is discharged to the outside of the stepped portion 170A in the radial direction with the pressure uniformized. Therefore, by discharging gas with uniform pressure, it is possible to effectively suppress the processing liquid from flowing around (for example, chemical liquid, cleaning liquid, those that have become an atmosphere, or those that have rebounded to the processing cup 511). Further, the removal (mainly drying process) of the processing liquid adhering to the substrate W and the back shielding plate 170 can also be effectively performed.

<About the modification of the step part>
FIG. 15 is a cross-sectional view schematically showing a modification of the stepped portion of the back blocking plate.

As an example is shown in FIG. 15, the back shielding plate 170X includes a plurality of stepped portions 172. The step portion 172 is formed to extend in the circumferential direction of the back shielding plate 170X. In the portion where the stepped portion 172 is formed, the gap region 180 is narrower on the outside in the radial direction than on the inside in the radial direction.

At the location where the stepped portion 172 is formed, the gas is blocked on the inside of the stepped portion 172 in the radial direction and a pressure loss occurs, making the pressure uniform. It is discharged to the outside of the portion 172 in the radial direction. Therefore, by discharging the gas with uniform pressure, it is possible to suppress the processing liquid from flowing around to the lower surface of the substrate W.

FIG. 16 is a cross-sectional view schematically showing another modification of the stepped portion of the back shielding plate.

As an example is shown in FIG. 16, the back shielding plate 170Y includes a plurality of stepped portions 173. The step portion 173 is formed to extend in the circumferential direction of the back shielding plate 170Y. Due to the plurality of stepped portions 173 formed in a step shape, the gap region 180 is narrower on the outside in the radial direction than on the inside in the radial direction.

By forming the stepped portion 173, the gas is blocked on the inside in the radial direction, resulting in a pressure loss, which makes the pressure uniform, and furthermore, the gas is discharged to the outside in the radial direction with the pressure uniform. be done. Therefore, by discharging the gas with uniform pressure, it is possible to suppress the processing liquid from flowing around to the lower surface of the substrate W.

Note that the shape that narrows the width of the gap region 180 formed on the upper surface of the back shielding plate is not limited to the above-mentioned stepped portion, and for example, the shape that narrows the width of the gap region 180 is gradually reduced from the inside in the radial direction to the outside in the radial direction. It may also be an inclined shape that narrows the width of the region 180.

<About the effects produced by the embodiments described above>
Next, examples of effects produced by the embodiment described above will be shown. In addition, in the following description, the effects will be described based on the specific configurations shown in the embodiments described above, but examples will not be included in the present specification to the extent that similar effects are produced. may be replaced with other specific configurations shown.

According to the embodiment described above, the substrate processing apparatus includes a holding section, a rotation drive section, and a facing plate. Here, the holding portion corresponds to, for example, the spin base 51A. Further, the rotation drive unit corresponds to, for example, the spin motor 51D. Further, the opposing plate corresponds to, for example, the back blocking plate 170. The spin base 51A rotatably holds the substrate W. The spin motor 51D rotates the spin base 51A. The back shielding plate 170 surrounds the spin base 51A in plan view. Further, the back shielding plate 170 is arranged to face the substrate W. Further, the back blocking plate 170 includes a first gas supply section and at least one displacement section. Here, the first gas supply section corresponds to, for example, the gas supply section 170B. Further, the displacement portion corresponds to, for example, the stepped portion 170A. The gas supply section 170B is provided on the inside in the radial direction, and supplies gas between at least the substrate W and the back shielding plate 170. The step portion 170A is provided on a surface facing the substrate W that is radially outer than the gas supply portion 170B. Furthermore, the distance between the stepped portion 170A and the substrate W is shorter on the outer side in the radial direction than on the inner side in the radial direction.

According to such a configuration, the gas supplied from the gas supply hole 1700B is dammed up on the inside of the stepped portion 170A in the radial direction, causing a pressure loss, so that the pressure becomes uniform, and furthermore, the pressure becomes uniform. In this state, it is discharged to the outside of the stepped portion 170A in the radial direction. Therefore, by discharging the gas with uniform pressure, it is possible to effectively suppress the processing liquid from flowing around the lower surface of the substrate W. Further, the removal (mainly drying process) of the processing liquid adhering to the substrate W and the back shielding plate 170 can also be effectively performed.

In addition, in the case where other configurations illustrated in the present specification are appropriately added to the above configuration, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the back shielding plate 170 has a second diaphragm for supplying gas between the substrate W and the back shielding plate 170 on the radially outer side of the stepped portion 170A. Equipped with a gas supply section. Here, the second gas supply section corresponds to, for example, the gas supply section 170D. According to such a configuration, even if the gas pressure is not sufficiently uniform due to the machining accuracy of the material (resin, etc.) constituting the back shielding plate 170, gas can be supplied auxiliary from the gas supply hole 1700D. By doing so, it is possible to supplement the uniformity of gas pressure.

Further, according to the embodiment described above, a plurality of step portions 172 or 173 are provided in the radial direction of the back blocking plate 170. According to such a configuration, the gas is temporarily blocked at a plurality of locations in the radial direction, so that the uniformity of the pressure of the gas discharged from the gap region 180 is increased.

Further, according to the embodiment described above, the stepped portion 170A, the stepped portion 172, or the stepped portion 173 has a stepped shape extending in the circumferential direction of the back blocking plate 170. According to such a configuration, gas can be discharged at a uniform pressure in the entire circumferential direction of the back blocking plate 170.

Further, according to the embodiment described above, the gas supply section 170B supplies gas toward the spin base 51A. According to such a configuration, part of the gas blown from the gas supply hole 1700B to the spin base 51A flows into the gap region 180, and the other part flows below the back shielding plate 170 and into the housing 171. . Therefore, in addition to the processing liquid and the like entering the gap region 180, it is also possible to prevent the processing liquid and the like from entering below the back blocking plate 170 and into the housing 171.

Further, according to the embodiment described above, the gas supply section 170B is provided on the radially inner side surface of the back blocking plate 170. The back shielding plate 170 includes a protrusion 170C that is provided on the radially inner side surface and is closer to the substrate W than the gas supply section 170B. According to such a configuration, the proportion of gas flowing from the gas supply hole 1700B below the back shielding plate 170 and into the housing 171 increases, so that the processing liquid (for example, a chemical solution) flows below the back shielding plate 170 and into the housing 171. , the cleaning liquid, their atmosphere, or those that have rebounded onto the processing cup 511) can be suppressed from entering. Furthermore, the gas is temporarily blocked by the protrusion 170C, and the pressure becomes uniform at that location, so that the uniformity of the pressure of the gas flowing into the gap region 180 can be improved.

Further, according to the embodiment described above, the substrate processing apparatus includes the moving section 190 and the control section 7. The moving unit 190 is connected to the back blocking plate 170 and moves the back blocking plate 170 toward or away from the substrate W. The control unit 7 controls the operation of the moving unit 190. According to such a configuration, the distance between the substrate W and the back blocking plate 170 can be changed depending on the content of the substrate processing, so that an effective width of the gap region 180 can be achieved in each processing. be able to.

Furthermore, according to the embodiments described above, the substrate processing apparatus includes an adjustment section for adjusting the connection distance between the moving section 190 and the back blocking plate 170. Here, the adjustment portion corresponds to, for example, the adjustment screw 1701B or the adjustment screw 1701C. According to such a configuration, by adjusting the pushing degree of the adjustment screw 1701B and the tightening degree of the adjustment screw 1701C, the back shielding plate 170 and the substrate W can be adjusted while taking into account the change in the gap area 180 due to its own weight or wind pressure. (i.e., the width of gap region 180) can be controlled.

Further, according to the embodiment described above, the substrate processing apparatus includes the imaging unit 200 for imaging the substrate W. Then, the control unit 7 controls the operation of the moving unit 190 based on the shape of the substrate W in a side view in the image captured by the imaging unit 200. According to such a configuration, the distance between the lower surface of the substrate W and the upper surface of the back blocking plate 170 can be controlled with high accuracy using the captured image.

Further, according to the embodiment described above, the substrate processing apparatus includes a chemical liquid supply unit for supplying a chemical liquid to the substrate W, and a cleaning liquid supply unit for supplying a cleaning liquid to the substrate W. It is equipped with a section. Here, the chemical liquid supply section corresponds to, for example, the chemical liquid nozzle 52. Further, the cleaning liquid supply section corresponds to, for example, the cleaning liquid nozzle 64. Then, the control unit 7 determines that the distance between the back blocking plate 170 and the substrate W while the chemical solution is being supplied from the chemical solution nozzle 52 is greater than the distance between the back blocking plate 170 and the substrate W while the cleaning solution is being supplied from the cleaning solution nozzle 64. The operation of the moving section 190 is controlled so that the distance between the substrate W and the substrate W is increased. According to such a configuration, it is possible to suppress the chemical liquid from flowing around to the lower surface of the substrate W, and to ensure a wide range in which the lower surface of the substrate W is cleaned by the cleaning liquid.

Further, according to the embodiment described above, in the substrate processing apparatus, the back blocking plate 170 is provided along the outer side surface in the radial direction, and is configured to discharge the cleaning liquid to the edge of the substrate W. It is equipped with an end cleaning liquid discharge part. Here, the end cleaning liquid discharge section corresponds to, for example, the cleaning liquid discharge section 170G. According to such a configuration, the liquid film of the cleaning liquid from below the substrate W by the cleaning liquid discharge part 170G acts as a barrier, and the processing liquid (chemical solution, cleaning liquid, etc.) that comes around from above the substrate W is prevented from coming from the back surface edge of the substrate W. Intrusion into the inside in the radial direction is suppressed. Furthermore, by discharging the cleaning liquid from the cleaning liquid discharging section 170G, it is possible to effectively remove the chemical liquid and the like on the lower surface of the substrate W, which cannot be removed by the cleaning liquid nozzle 64 alone. Further, since the cleaning liquid discharge portion 170G is located on the outer surface of the back blocking plate 170, the area where the cleaning liquid tends to remain is the outer surface of the back blocking plate 170. Therefore, even if the cleaning liquid remains, it is unlikely to affect the processing of the substrate W.

<About modifications of the embodiment described above>
In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are only one example in all aspects. However, it is not limited to what is described in the specification of this application.

Accordingly, countless variations and equivalents, not illustrated, are envisioned within the scope of the technology disclosed herein. For example, this includes cases in which at least one component is modified, added, or omitted.

In addition, in the embodiments described above, if a material name is stated without being specified, unless a contradiction occurs, the material may contain other additives, such as an alloy. shall be included.

1 Substrate processing system 2 Indexer section 3 Processing section 3A Transfer module 3B Processing module 7 Control section 21 Substrate container 22, 133A Stage 23 Indexer robot 23A Base section 23B Multi-joint arm 23C, 23D, 33C, 33D Hand 31 Transfer mechanism 33 Transfer robot 33A Horizontal drive section 33B Vertical drive section 33E Support column 33F Connector 50 Processing chamber 50A Partition wall 50B Opening 50C Shutter 51 Spin chuck 51A Spin base 51C Rotating shaft 51D Spin motor 52 Chemical nozzle 53 Chemical tank 54 Chemical piping 55 Liquid feeding device 56 Chemical liquid valve 57 Circulation piping 58 Circulation valve 59 Temperature control device 60 Rinse liquid nozzle 61 Rinse liquid piping 62 Rinse liquid valve 64 Cleaning liquid nozzle 65 Cleaning liquid piping 66 Cleaning liquid valve 71 CPU
72 ROM
73 RAM
74 Storage section 75 Bus wiring 76 Input section 77 Display section 78 Communication section 100A, 100B, 100C Substrate processing device 133B Horizontal slider 133C Horizontal motor 133D Rotating motor 133G Vertical slider 133H Vertical motor 152 Chemical arm 152A, 160A Rotation drive source 15 2B, 160B Shaft body 152C, 160C Arm part 160 Rinse liquid arm 170, 170X, 170Y Back shield plate 170A, 172, 173 Step part 170C Projection part 170B, 170D Gas supply part 170E Connection screw part 170F Eaves part 170G Cleaning liquid discharge part 171 housing 171A Discharge hole 180 Gap area 181 Reinforcement ring 182 Base ring 190 Moving part 190A Connection part 190B Shaft 190C Spring 200 Imaging part 511 Processing cup 513 Drain port 515 Exhaust port 1700A, 1700C Gas flow path 1700B, 1700D Gas supply hole 17 01A Cap 1701B ,1701C adjustment screw

Claims (13)

a holding part for rotatably holding the board;
a rotational drive unit for rotating the holding unit;
a facing plate surrounding the holding part and facing the substrate in plan view ;
a moving part connected to the opposing plate and for moving the opposing plate closer to or away from the substrate;
a control unit for controlling the operation of the moving unit;
an adjustment section for adjusting the connection distance between the moving section and the opposing plate ;
The opposing plate is
a first gas supply section provided on the inside in the radial direction and for supplying gas between at least the substrate and the opposing plate;
At least one gas supply section that is provided on a surface facing the substrate on the outer side in the radial direction than the first gas supply section, and has a shorter distance to the substrate on the outer side in the radial direction than on the inner side in the radial direction. and two displacement parts;
Substrate processing equipment. a holding part for rotatably holding the board;
a rotational drive unit for rotating the holding unit;
an opposing plate surrounding the holding part and facing the substrate in plan view;
The opposing plate is
a first gas supply section provided on the inside in the radial direction and for supplying gas between at least the substrate and the opposing plate;
At least one gas supply section that is provided on a surface facing the substrate on the outer side in the radial direction than the first gas supply section, and has a shorter distance to the substrate on the outer side in the radial direction than on the inner side in the radial direction. and two displacement parts ,
The opposing plate further includes an edge cleaning liquid discharge part provided along a radially outer side surface and configured to discharge cleaning liquid to an edge of the substrate.
Substrate processing equipment. The substrate processing apparatus according to claim 1 or 2 ,
The opposing plate further includes a second gas supply part for supplying gas between the substrate and the opposing plate on the outer side of the displacement part in the radial direction.
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 3 ,
A plurality of the displacement portions are provided in a radial direction of the opposing plate,
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 4 ,
The displacement portion has a stepped shape extending in the circumferential direction of the opposing plate.
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 5 ,
the first gas supply section supplies the gas toward the holding section;
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 6 ,
The first gas supply section is provided on a radially inner side surface of the opposing plate,
The opposing plate further includes a protrusion provided on a radially inner side surface and closer to the substrate than the first gas supply section.
Substrate processing equipment. The substrate processing apparatus according to claim 2 ,
a moving part connected to the opposing plate and for moving the opposing plate closer to or away from the substrate;
further comprising a control section for controlling the operation of the moving section;
Substrate processing equipment. The substrate processing apparatus according to claim 8 ,
further comprising an adjustment section for adjusting a connection distance between the moving section and the opposing plate;
Substrate processing equipment. A substrate processing apparatus according to claim 1, 8 or 9 ,
further comprising an imaging unit for imaging the substrate,
The control unit controls the operation of the moving unit based on a shape of the substrate in a side view in an image captured by the imaging unit.
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1, 8 to 10 ,
a chemical liquid supply unit for supplying a chemical liquid to the substrate;
further comprising a cleaning liquid supply unit for supplying cleaning liquid to the substrate,
The control unit may be configured such that the distance between the opposing plate and the substrate while the cleaning liquid is being supplied by the cleaning liquid supplying unit is greater than the distance between the opposing plate and the substrate while the chemical liquid is being supplied by the chemical supplying unit. controlling the operation of the moving unit so that the distance between the moving unit and the substrate is increased;
Substrate processing equipment. The substrate processing apparatus according to claim 1 ,
The opposing plate further includes an edge cleaning liquid discharge part provided along a radially outer side surface and configured to discharge cleaning liquid to an edge of the substrate.
Substrate processing equipment. a holding part for rotatably holding the board;
a rotational drive unit for rotating the holding unit;
an opposing plate surrounding the holding part and facing the substrate in plan view;
The opposing plate is
a first gas supply section provided on the inside in the radial direction and for supplying gas between at least the substrate and the opposing plate;
Provided on a surface facing the substrate that is radially outer than the first gas supply section, and the distance between the gas supply section and the substrate is shorter on the radially outer side than on the radially inner side. a step-shaped step portion extending in the circumferential direction of the opposing plate;
A second gas supply valve for supplying gas upward in the vertical direction to a gap region that extends radially outward from the step portion to the end of the substrate and is a region sandwiched between the upper surface of the opposing plate and the lower surface of the substrate. and a gas supply section,
The vertical width of the gap region is 0.1 mm or more and 1.0 mm or less ,
Substrate processing equipment.

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