TW202103229A - Substrate processing apparatus - Google Patents

Abstract

This invention aims to effectively suppress the return of the processing liquid to the lower surface of the substrate. The substrate processing apparatus includes: a holding portion for holding the substrate rotatably, a rotation driving portion for rotating the holding portion, and a counter plate surrounding the holding portion in plan view and facing the substrate. The counter plate has: a first gas supply portion disposed on the inner side in the radial direction for supplying gas at least between the substrate and the counter plate; at least one displacement portion disposed on a surface facing the substrate radially outside the first gas supply portion. The outer side in the radial direction, compared with the inner side in the radial direction, has a shorter distance to the substrate.

Description

Substrate processing device

The technology disclosed in this specification relates to a substrate processing apparatus and a substrate processing method.

Conventionally, in the manufacturing process of a substrate such as a semiconductor substrate, a substrate processing apparatus is used to perform various processing (substrate processing) on the substrate. The processing uses a processing liquid for processing the substrate (for example, refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2017-11015 A.

[The problem to be solved by the invention]

In substrate processing, when the processing liquid circulates to the lower surface (back surface) of the substrate to be processed, unintentional deterioration or the like may occur. In Patent Document 1, gas is sprayed to the lower surface of the substrate, thereby suppressing the entrapment of the processing liquid.

However, in the technique disclosed in Patent Document 1, in the case where the pressure of the gas blown to the lower surface of the substrate is not uniform, there may be cases where the entrapment of the processing liquid cannot be sufficiently suppressed.

The technology disclosed in this specification was developed in view of the problems described above, and aims to provide a technology that effectively prevents the treatment liquid from entering the lower surface of the substrate. [Means to solve the problem]

The substrate processing apparatus of the first aspect of the technology disclosed in this specification includes: a holding part for rotatably holding a substrate; a rotation driving part for rotating the holding part; and an opposing plate attached to When viewed in a plan view, it surrounds the holding portion and faces the substrate; the opposed plate is provided with: a first gas supply portion, which is provided on the inner side in the radial direction, and is used to supply at least between the substrate and the opposed plate Gas; and at least one displacement portion, which is provided on the surface opposite to the substrate in the outer side of the first gas supply portion in the radial direction, and the outer side of the radial direction and the substrate than the inner side in the radial direction The distance between them is short.

The substrate processing apparatus of the second aspect of the technology disclosed in this specification is the substrate processing apparatus described in the first aspect, wherein the counter plate is further provided on the outer side in the radial direction than the displacement portion: The second gas supply unit supplies gas between the substrate and the opposing plate.

The substrate processing apparatus of the third aspect of the technology disclosed in this specification is the substrate processing apparatus described in the first aspect or the second aspect, wherein the displacement portion is provided in a radial direction of the opposing plate. .

The substrate processing apparatus of the fourth aspect of the technology disclosed in this specification is the substrate processing apparatus described in any one of the first aspect to the third aspect, wherein the displacement portion is facing the opposite plate The step shape extending in the circumferential direction.

The substrate processing apparatus of the fifth aspect described in this specification is the substrate processing apparatus described in any one of the first aspect to the fourth aspect, wherein the first gas supply portion supplies the aforementioned holding portion gas.

The substrate processing apparatus of the sixth aspect of the technology disclosed in this specification is the substrate processing apparatus described in any one of the first aspect to the fifth aspect, wherein the first gas supply part is provided on the The side surface facing the inner side in the radial direction of the plate; the facing plate system further includes a protrusion provided on the side surface on the inner side in the radial direction and closer to the substrate than the first gas supply portion.

The substrate processing apparatus of the seventh aspect of the technology disclosed in this specification is the substrate processing apparatus described in any one of the first aspect to the sixth aspect, and further includes: a moving part connected to the aforementioned pair The facing plate is used to move the facing plate closer to or away from the substrate; and the control part controls the movement of the moving part.

The substrate processing apparatus of the eighth aspect of the technology disclosed in this specification is the substrate processing apparatus described in the seventh aspect, and further includes: an adjustment portion for adjusting the gap between the moving portion and the opposing plate Link distance.

The substrate processing apparatus of the ninth aspect of the technology disclosed in this specification is the substrate processing apparatus described in the seventh aspect or the eighth aspect, and further includes: a photographing unit that photographs the aforementioned substrate; and the aforementioned control unit is based on The shape of the side view of the substrate in the image captured by the imaging unit controls the movement of the moving unit.

The substrate processing apparatus of the tenth aspect of the technology disclosed in this specification is the substrate processing apparatus described in any one of the seventh aspect to the ninth aspect, and further includes: a chemical liquid supply unit for Supplying a chemical solution to the substrate; and a cleaning solution supply unit for supplying cleaning solution to the substrate; the control unit controls the operation of the moving unit so that the cleaning solution supply unit supplies the cleaning solution The distance between the opposed plate and the substrate during the liquid period becomes longer than the distance between the opposed plate and the substrate during the period when the chemical liquid is supplied by the chemical liquid supply unit.

The substrate processing apparatus of the eleventh aspect disclosed in this specification is the substrate processing apparatus described in any one of the first aspect to the tenth aspect, wherein the aforementioned opposed plate system further includes: end cleaning The liquid ejection portion is provided along the outer side surface in the radial direction, and is used to eject the cleaning liquid to the end of the substrate. [Efficacy of invention]

According to the first aspect to the eleventh aspect of the technology disclosed in this specification, the pressure of the gas supplied from the first gas supply part becomes uniform in the radial inner side of the displacement part, and the pressure has become In a uniform state, the gas system supplied from the first gas supply part is discharged to the outside in the radial direction of the displacement part. Therefore, the uniform pressure of the gas can be discharged to effectively prevent the processing liquid from entering the lower surface of the substrate.

In addition, the purpose, features, aspects, and advantages related to the technology disclosed in this specification can be more clarified by the detailed description described below and the accompanying drawings.

Hereinafter, the embodiment will be described with reference to the accompanying drawings. In the following embodiments, detailed features and the like are also shown for the purpose of explaining the technology, but these detailed features are only examples, and not all of these detailed features are necessary for implementing this embodiment.

In addition, the drawings are shown diagrammatically, and for the convenience of description, the configuration will be omitted or simplified in the drawings as appropriate. In addition, the relationship between the sizes and positions of the structures, etc., respectively shown in different drawings is not described correctly, and will be changed as appropriate. In addition, even in drawings such as a plan view instead of a cross-sectional view, hatching may be attached to facilitate understanding of the inside of the embodiment.

In addition, in the description shown below, the same component elements are shown with the same reference numerals, and the names and functions of these same components are also the same. Therefore, in order to avoid repetition, detailed descriptions of the same constituent elements may be omitted.

In addition, in the description described below, when a certain component is described as "has," "includes," or "has," etc., unless otherwise specified, it does not exclude the existence of other components The expression of exclusion.

In addition, in the descriptions described below, even when ranking numbers such as "first" or "second" are used, these terms are simply used for easy understanding of the content of the embodiment, and the present invention is not covered by these terms. The order represented by the sort number is limited.

In addition, in the descriptions described below, the expressions that show the state of equality, such as the expressions of "same", "equal", "uniformity", or "homogeneous", etc., unless otherwise specified, include the expressions that show the state of equality strictly Circumstances and circumstances in which errors occur in tolerances or within the scope of obtaining the same degree of functionality.

In addition, expressions such as "move the object in a specific direction" in the description described below, unless otherwise specified, include the case of moving the object in parallel with the specific direction and the case where the object is moved in a certain direction. The direction of the component moving in the specific direction.

In addition, in the descriptions described below, even when specific positions such as "up", "down", "left", "right", "side", "bottom", "table", or "back" are used In the case of directional terms, these terms are simply used to easily understand the content of the embodiment, and have nothing to do with the actual implementation direction.

[Implementation form] Hereinafter, the substrate processing system, substrate processing apparatus, and substrate processing method of this embodiment will be described.

[Construction of substrate processing system] FIG. 1 is a diagram schematically showing an example of the configuration of the substrate processing system of this embodiment. In addition, from the viewpoint of easy understanding of the configuration, some of the constituent elements may be omitted or simplified in the drawings.

The substrate processing system 1 is a blade-type processing system for processing disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing system 1 performs various processing such as cleaning processing or etching processing on the substrate W.

As shown in the example shown in FIG. 1, the substrate processing system 1 is provided with an indexer section 2 and a processing section 3 in sequence toward the positive direction of the X-axis.

In addition, the processing area 3 is sequentially provided with a conveying module 3A and a processing module 3B facing the positive X-axis direction.

[Index Area] The index area 2 is provided with: a substrate storage container 21, which can store a plurality of substrates W in a stacked state; a stage 22, which supports the substrate storage container 21; and an indexer robot 23, which is received from the substrate storage container 21 The unprocessed substrate W is taken, and the substrate W that has been processed in the processing zone 3 is transferred to the substrate container 21.

In addition, although the number of stages 22 is drawn as one in the example of FIG. 1 for simplicity, one or more stages 22 may be arranged in the Y-axis direction.

The substrate storage container 21 may also be a front opening unified pod (FOUP) used to contain the substrate W in a sealed state, or may be a standard mechanical inter face (SMIF) pod or Open cassette (OC; open cassette), etc.

The index robot 23 includes, for example, a base part 23A; an articulated arm 23B; and two hands 23C and 23D, which are provided in the vertical direction with an interval therebetween.

The base portion 23A is fixed to, for example, a frame that defines the outer shape of the index area 2 of the substrate processing system 1.

The multi-joint arm 23B is formed by rotatably connecting a plurality of arm parts that can rotate along a horizontal plane. The angle between the arms is changed by the joint part belonging to the joint part of the plural arm parts, thereby the plural arm parts The department is constructed to be flexible and stretchable.

In addition, the base end portion of the multi-joint arm 23B is coupled to the base portion 23A so as to be rotatable about a vertical axis. Furthermore, the multi-joint arm 23B is coupled to the base portion 23A so as to be liftable.

The hand 23C and the hand 23D are configured to hold a single substrate W, respectively.

The index robot 23 uses, for example, a hand 23C to carry out a piece of unprocessed substrate W from the substrate container 21 held on the stage 22. Next, the index robot 23 transfers the substrate W to the transport mechanism 31 (described later) in the transport module 3A from the negative direction of the X axis.

In addition, the index robot 23 uses, for example, a hand 23D to pick up a processed substrate W from the transport mechanism 31. Next, the index robot 23 stores the substrate W in the substrate storage container 21 held by the table 22.

[Processing area] The conveyance module 3A in the processing zone 3 is equipped with a conveyance mechanism 31 that can convey one or a plurality of substrates W while being held in a horizontal posture.

The transport mechanism 31 can also be used to move, for example, a cylindrical transport path surrounded by partition walls (not shown here) formed along the XZ plane and the XY plane. In addition, the transport mechanism 31 may be guided by a rail extending along the X-axis direction to reciprocate.

The substrate W is transported by the transport mechanism 31 between the position in the negative direction of the X axis and the position in the positive direction of the X axis. The position in the negative direction of the X axis is close to the index area 2, and the position in the positive direction of the X axis is close to the transport robot 33. (Described later).

The processing module 3B in the processing area 3 is equipped with: a transfer robot 33 that transfers the substrate W; and a plurality of substrate processing apparatuses 100A, 100B, and 100C, which are used for unprocessed materials supplied from the transfer mechanism 31 The substrate W is subjected to prescribed processing.

The transport robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support 33E. The support 33E extends in the vertical direction and is equipped with a horizontal drive 33A, a vertical drive 33B, and a vertical drive 33A via a coupling 33F. Hand 33C and hand 33D.

The horizontal driving unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal driving unit 33A includes a table 133A; a horizontal slider 133B that reciprocates the upper surface of the table 133A in the horizontal direction; and a horizontal motor 133C that moves the horizontal slider 133B.

A rail (not shown here) extending linearly is provided on the upper surface of the table 133A, and the moving direction of the horizontal slider 133B is regulated by the rail. The movement of the horizontal slider 133B is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism, for example.

A hand 33C and a hand 33D are provided at the front end of the horizontal slider 133B. When the horizontal slider 133B is moved along the rail by the horizontal motor 133C, the hand 33C and the hand 33D can move forward and backward in the horizontal direction. In other words, the horizontal driving unit 33A moves the hand 33C and the hand 33D from the support 33E in a direction away from the horizontal direction and a direction close to the horizontal direction.

The horizontal drive unit 33A includes a rotation motor 133D that rotates the table 133A around a rotation axis Z1 along the vertical direction. By rotating the motor 133D, the hand 33C and the hand 33D can rotate around the rotation axis Z1 in a range that is not interfered by the support 33E.

The vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a rail (not shown here) that is provided on the pillar 33E and extends in the vertical direction.

The vertical motor 133H reciprocates the vertical slider 133G in the vertical direction along the rail. The movement of the vertical slider 133G is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

The connecting tool 33F connects the vertical slider 133G and the table 133A, and supports the table 133A from below. The vertical motor 133H moves the vertical slider 133G, whereby the table 133A moves in the vertical direction. Thereby, the hand 33C and the hand 33D move up and down in the vertical direction.

In addition, it is not necessary for the horizontal driving unit 33A to move the hand 33C and the hand 33D in parallel with the horizontal direction, and the hand 33C and the hand 33D may be moved in the combined direction of the horizontal direction and the vertical direction. That is, "moving in the horizontal direction" refers to moving in a direction with a horizontal component.

Similarly, it is not necessary for the vertical drive unit 33B to move the hand 33C and the hand 33D in parallel to the vertical direction, and the hand 33C and the hand 33D may be moved in the combined direction of the vertical direction and the horizontal direction. That is, "moving in the vertical direction" means moving in the direction of the component having the vertical direction.

The transfer robot 33 uses, for example, a hand 33C to carry out a piece of unprocessed substrate W held by the transfer mechanism 31. Next, the transfer robot 33 arranges the substrate W on the upper surface of a rotation base 51A (described later) in the substrate processing apparatus 100A from the negative X-axis direction, for example.

In addition, the transfer robot 33 uses, for example, a hand 33D to pick up a processed substrate W from the substrate processing apparatus 100A, the substrate processing apparatus 100, or the substrate processing apparatus 100C. Next, the transfer robot 33 transfers the substrate W to the transfer mechanism 31.

The substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are sequentially stacked in the positive direction of the Z axis to form a processing tower TW.

In addition, in the example of FIG. 1, three substrate processing apparatuses are drawn for simplicity, but the number of substrate processing apparatuses may be three or more.

In addition, although the substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are shown in the positive direction of the X axis of the transfer robot 33 in FIG. 1, the substrate processing apparatus 100A, the substrate processing apparatus 100B, and the substrate processing apparatus 100C are arranged. The position is not limited to such a situation, and for example, it may be arranged in any one of the positive X-axis direction, the positive Y-axis direction, or the negative Y-axis direction of the transport robot 33.

[Construction of substrate processing equipment] FIG. 2 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 100A in the substrate processing system of the present embodiment. In addition, the configurations of the substrate processing apparatus 100B and the substrate processing apparatus 100C are also the same as in the case of the example shown in FIG. 2.

The substrate processing apparatus 100A is a blade-type processing apparatus for processing disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 100A is a liquid (i.e., a processing liquid containing a chemical liquid, a cleaning liquid, or a cleaning liquid) or a gas fluid treatment, a treatment using electromagnetic waves such as ultraviolet rays, or a physical cleaning treatment (for example, Various treatments (cleaning treatment, etching treatment, etc.) such as brush cleaning, spray nozzle cleaning, etc.).

In addition, substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, or organic EL (electroluminescence; electroluminescence) display devices, such as flat panel display (FPD; flat panel display) substrates, optical disk substrates, magnetic disk substrates, Optical magnetic disk substrates, photomask substrates, ceramic substrates, printed substrates, solar cell substrates, etc.

As shown in the example shown in FIG. 2, the substrate processing apparatus 100A includes: a box-shaped processing chamber 50 having an internal space; and a rotation jig 51 in the processing chamber 50 while holding a substrate W in a horizontal position while holding the substrate W It rotates around the vertical axis of rotation Z passing through the center of the substrate W; the back barrier plate 170 is arranged facing the lower surface of the substrate W; the moving part 190 is configured to make the back barrier plate 170 face the vertical direction (that is, as shown in the figure). The Z direction in 2) moves; the frame 171 covers the rotation jig 51 and the moving part 190; and the cylindrical processing cup 511 surrounds the frame 171 around the rotation axis Z of the substrate W.

Here, the term "opposing" means, for example, a state where the surfaces face each other, and other objects may be sandwiched between the facing surfaces.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B is formed in the partition wall 50A, and the opening 50B is used to carry the substrate W into the processing chamber 50 and to carry the substrate W out of the processing chamber 50.

The opening 50B is opened and closed by a shutter 50C. The stop door 50C is between the closed position (shown by the two-dot chain line in Figure 2) and the open position (shown by the solid line in Figure 2) by the stop door lifting mechanism (not shown here) Ascending and descending, the closed position is a position where the opening 50B is covered, and the open position is a position where the opening 50B is opened.

When carrying in and carrying out the substrate W, the carrying robot uses a robot hand to access the inside of the processing chamber 50 through the opening 50B. Thereby, the unprocessed substrate W can be arranged on the upper surface of the rotation jig 51 and the processed substrate W can be removed from the rotation jig 51.

As shown in the example shown in FIG. 2, the rotation jig 51 is provided with: a disk-shaped spin base 51A, which is attached to the bottom surface of the substrate W in a horizontal position by vacuum suction; and a rotating shaft 51C, which is attached to the bottom surface of the substrate W in a horizontal posture. The center portion of the base 51A extends downward; and a spin motor 51D rotates the rotating shaft 51C, thereby rotating the substrate W adsorbed on the spin base 51A.

The upper surface of the rotation base 51A is, for example, a flat surface made of porous ceramics or the like. However, grooves, concavities and convexities, etc., may be formed on the upper surface of the rotation base 51A within the range in which the substrate W can be adsorbed.

The back barrier plate 170 is annularly arranged so as to surround the circumference of the rotation jig 51 when viewed from above. In addition, the upper surface of the back surface barrier 170 faces the lower surface of the substrate W held by the rotation base 51A. In addition, the area sandwiched between the upper surface of the back surface barrier spacer 170 and the lower surface of the substrate W is referred to as a gap area 180.

A step portion 170A is formed on the upper surface of the back surface barrier 170. In the step portion 170A, the distance between the upper surface of the back surface barrier plate 170 and the lower surface of the substrate W in the outer side in the radial direction is shorter than the inner side in the radial direction.

In addition, in FIG. 2, although the back surface barrier 170 has a diameter slightly smaller than that of the substrate W, the size of the back surface barrier 170 is not limited to this, and the size of the back surface barrier 170 may be the same as or the same as that of the substrate W. It can be larger than the substrate W.

In addition, in the present embodiment, although the back baffle plate 170 is independent of the rotation jig 51 and does not rotate around the rotation axis Z, the back baffle plate 170 may be rotated on any axis that may include the rotation axis Z as a center.

The moving part 190 supports the back barrier plate 170 and moves the back barrier plate 170 in the vertical direction. The moving part 190 is provided around the rotation jig 51 in a plan view, and is raised and lowered in the vertical direction by a motor (not shown).

By the movement of the moving part 190, the upper surface of the back surface barrier 170 is at a position (referred to as an upper position, etc.) that can contact the lower surface of the substrate W held by the rotation base 51A, and the upper surface of the back surface barrier 170 The gap region 180 sandwiched between the surface and the lower surface of the substrate W moves up and down between positions (referred to as lower positions, etc.) where the gap region 180 is sufficiently expanded. Here, the operation of the moving unit 190 is controlled by a control unit described later.

In addition, in the present embodiment, although the back barrier plate 170 is moved by the movement of the moving part 190 to change the width of the gap area 180 in the Z direction, it may also be the case where it is moved by the rotating base 51A. The held substrate W relatively moves with respect to the back surface barrier 170, thereby changing the width of the gap region 180 in the Z direction.

As shown in the example shown in FIG. 2, the substrate processing apparatus 100A is equipped with: a chemical liquid nozzle 52 which sprays chemical liquid toward the upper surface of the substrate W held by the rotation jig 51; The liquid nozzle 52; the liquid medicine tank 53 stores the liquid medicine supplied to the liquid medicine nozzle 52; the liquid medicine piping 54 guides the liquid medicine in the liquid medicine tank 53 to the liquid medicine nozzle 52; the liquid feeding device 55( For example, a pump (pump), which transports the liquid medicine in the liquid medicine tank 53 to the liquid medicine pipe 54; and the liquid medicine valve 56, which opens and closes the inside of the medicine liquid pipe 54.

The liquid medicine arm 152 includes a rotation drive source 152A, a shaft 152B, and an arm 152C; one end of the arm 152C is fixed to the upper end of the shaft 152B, and the other end of the arm 152C is equipped with a liquid medicine nozzle 52.

The liquid medicine arm 152 rotates the shaft 152B by the rotation driving source 152A, whereby the liquid medicine nozzle 52 installed at the front end of the arm 152C can move along the upper surface of the substrate W held by the rotation jig 51. That is, the chemical liquid nozzle 52 attached to the tip of the arm 152C becomes movable in the horizontal direction. Here, the drive system of the rotation drive source 152A is controlled by a control unit described later.

Furthermore, the substrate processing apparatus 100A is equipped with: a circulation pipe 57, which is connected to the chemical solution pipe 54 and the chemical solution tank 53 on the upstream side (that is, the chemical solution tank 53 side) than the chemical solution valve 56; The inside of the circulation pipe 57 is opened and closed; and the temperature adjustment device 59 adjusts the temperature of the liquid medicine flowing in the circulation pipe 57.

The opening and closing of the liquid medicine valve 56 and the circulation valve 58 are controlled by a control unit described later. In the case where the liquid medicine in the liquid medicine tank 53 is supplied to the liquid medicine nozzle 52, the liquid medicine valve 56 is opened and the circulation valve 58 is closed. In this state, the liquid medicine system transported from the liquid medicine tank 53 to the liquid medicine pipe 54 by the liquid supply device 55 is supplied to the liquid medicine nozzle 52.

On the other hand, in the case where the supply of the chemical liquid to the chemical liquid nozzle 52 is stopped, the chemical liquid valve 56 is closed and the circulation valve 58 is opened. In this state, the liquid medicine system transported from the liquid medicine tank 53 to the liquid medicine pipe 54 by the liquid supply device 55 is returned to the liquid medicine tank 53 through the circulation pipe 57. Therefore, during the stop of supply of the chemical liquid to the chemical liquid nozzle 52, the chemical liquid continues to circulate through the circulation path constituted by the chemical liquid tank 53, the chemical liquid pipe 54 and the circulation pipe 57.

The temperature adjustment device 59 adjusts the temperature of the liquid medicine flowing in the circulation pipe 57. Therefore, the liquid medicine system in the liquid medicine tank 53 is heated by the circulation path during the supply stop period, and is maintained at a temperature higher than room temperature.

Furthermore, the degree of opening of the liquid medicine valve 56 can be adjusted so that the liquid medicine nozzle 52 discharges a small amount of liquid medicine to enable pre-dispense. In addition, a chemical liquid recovery member (not shown here) is arranged near the chemical liquid nozzle 52 to recover the chemical liquid preliminarily administered from the chemical liquid nozzle 52.

In addition, as shown in the example shown in FIG. 2, the substrate processing apparatus 100A is equipped with: a cleaning liquid nozzle 60 which sprays cleaning liquid toward the upper surface of the substrate W held by the rotation jig 51; and a cleaning liquid arm 160 which is installed at the front end There are cleaning fluid nozzles 60; cleaning fluid piping 61, which supplies cleaning fluid from a cleaning fluid supply source (not shown here) to the cleaning fluid nozzle 60; and a cleaning fluid valve 62, which switches from the cleaning fluid piping 61 to the cleaning The liquid nozzle 60 supplies the cleaning liquid and stops supplying the cleaning liquid from the cleaning liquid pipe 61 to the cleaning liquid nozzle 60. As the cleaning fluid, DIW (deionized water; deionized water) or the like can be used.

The cleaning liquid arm 160 includes a rotation drive source 160A, a shaft 160B, and an arm 160C. One end of the arm 160C is fixed to the upper end of the shaft 160B, and the other end of the arm 160C is equipped with a cleaning liquid nozzle 60.

The cleaning liquid arm 160 rotates the shaft 160B by the rotation driving source 160A, whereby the cleaning liquid nozzle 60 installed at the front end of the arm 160C becomes movable along the upper surface of the substrate W held by the rotation jig 51. That is, the cleaning liquid nozzle 60 attached to the front end of the arm 160C becomes movable in the horizontal direction. Here, the drive system of the rotation drive source 160A is controlled by a control unit described later.

After the chemical liquid is supplied to the substrate W through the chemical liquid nozzle 52, the cleaning liquid is supplied to the substrate W from the cleaning liquid nozzle 60, whereby the chemical liquid adhering to the substrate W and the backside barrier plate 170 can be rinsed.

In addition, as shown in the example shown in FIG. 2, the substrate processing apparatus 100A is provided with a cleaning liquid nozzle 64 for spraying cleaning liquid toward a predetermined location inside the processing chamber 50 (for example, the rotation base 51A); The liquid piping 65 is for supplying the cleaning liquid from the cleaning liquid supply source (not shown here) to the cleaning liquid nozzle 64; and the cleaning liquid valve 66 is for switching from the cleaning liquid piping 65 to the cleaning liquid The nozzle 64 supplies the cleaning liquid and stops the supply of the cleaning liquid from the cleaning liquid pipe 65 to the cleaning liquid nozzle 64. As the cleaning liquid, DIW (deionized water) or the like can be used.

The cleaning liquid nozzle 64 is installed on the inner wall of the processing chamber 50. In the state where the substrate W is held by the rotation jig 51, the rotation base 51A rotates and the washing liquid is sprayed from the washing liquid nozzle 64.

Then, the cleaning liquid sprayed from the cleaning liquid nozzle 64 splashes back on the upper surface of the substrate W, and the cleaning liquid is scattered into the processing chamber 50. By dispersing the washing liquid in this manner, various members (the back surface barrier 170 or the processing cover 511, etc.) arranged in the processing chamber 50 can be washed.

The processing cover 511 is installed so as to surround the circumference of the rotation jig 51, and is raised and lowered in the vertical direction by a motor not shown. The upper part of the processing cover 511 is raised and lowered between an upper position and a lower position. The upper position is a position where the upper end of the upper part of the processing cover 511 becomes higher than the substrate W held by the rotation base 51A, and the lower position is the processing cover The upper end of the upper part of 511 becomes the position of the substrate W held by the rotation base 51A or a position lower than the substrate W.

The processing liquid system scattered from the upper surface of the substrate W to the outside is caught by the inner surface of the processing cover 511. Next, the processing liquid received by the processing cover 511 is appropriately discharged to the outside of the processing chamber 50 through a liquid discharge port 513 provided at the bottom of the processing chamber 50 and provided inside the processing cover 511.

In addition, an exhaust port 515 is provided on the side of the processing chamber 50. The atmosphere in the processing chamber 50 is appropriately exhausted to the outside of the processing chamber 50 through the exhaust port 515.

3 is a cross-sectional view schematically showing an example of the structure of the back surface barrier plate 170 and the periphery of the back surface barrier plate 170 in the substrate processing apparatus of the present embodiment.

3 shows: the rotation jig 51 is to rotate the substrate W around the rotation axis Z while holding a substrate W in a horizontal posture; the back side barrier 170 is arranged facing the lower surface of the substrate W; the frame body 171, which covers the rotation jig 51; and a processing cover 511, which surrounds the frame 171 around the rotation axis Z of the substrate W. In addition, the moving part 190 is not shown in the cross section of FIG. 3.

The rotation jig 51 is provided with: a disk-shaped rotation base 51A, which vacuum-adsorbs the lower surface of the substrate W; a rotation shaft 51C, which extends downward from the center of the rotation base 51A; and a rotation motor 51D which is a rotation shaft The rotation of 51C rotates the substrate W sucked by the rotation base 51A.

A step portion 170A is formed on the upper surface of the back surface barrier 170. The step portion 170A is formed along the circumferential direction of the back barrier plate 170. Compared to the radially inner side of the stepped portion 170A (that is, the side close to the rotation base 51A), the radially outer side of the stepped portion 170A (that is, the side away from the rotation base 51A) is the upper surface of the back barrier plate 170 The distance from the lower surface of the substrate W is short, that is, the gap region 180 is narrowed.

In addition, although the back barrier plate 170 surrounds the rotation base 51A in a plan view, a gap is formed between the spin base 51A and the back barrier plate 170. The back baffle plate 170 is provided with: a gas supply portion 170B, which supplies gas (for example, N ₂ (nitrogen), which is an inert gas) to the gap, that is, from the inner wall of the back baffle plate 170 facing the rotation base 51A The gas is ejected toward the rotation base 51A. The gas supply portion 170B is provided on the inner side in the radial direction than the step portion 170A.

The gas supply part 170B is provided with: an annular gas flow path 1700A, which is a flow path for the gas to be supplied; and a gas supply hole 1700B, which is formed to penetrate the inner wall of the back baffle plate 170 from the gas flow path 1700A and is used to A hole through which the gas in the gas flow path 1700A is sprayed toward the rotation base 51A. In addition, in FIG. 3, although the blowing direction of the gas blown from the gas supply hole 1700B is perpendicular to the rotation base 51A, the blowing direction of the gas blown from the gas supply hole 1700B may be different from the rotation The vertical direction of the base 51A is inclined toward the substrate W side or the opposite side to the substrate W side.

_{In addition, the gas supply unit 170B supplies N 2 which} is an inert gas at 100 L/min to 500 L/min. Here, the operation of the gas supply unit 170B is controlled by a control unit described later.

In addition, on the inner wall of the back barrier plate 170, a protrusion 170C is formed on the side closer to the substrate W than the gas supply hole 1700B (that is, the upper side in FIG. 3). The distance between the inner wall of the back surface barrier plate 170 and the rotation base 51A in the position where the protrusion 170C is formed is greater than that in the position where the protrusion 170C is not formed (for example, the position where the gas supply hole 1700B is formed) The distance between the inner wall of the plate 170 and the rotation base 51A is still short.

In addition, the back surface barrier plate 170 is provided on the outer side in the radial direction than the stepped portion 170A: a gas supply portion 170D for supplying gas (for example, N _{2 which} is an inert gas) to the gap region 180.

The gas supply portion 170D is provided with: an annular gas flow path 1700C, which is a flow path of the gas to be supplied; and a gas supply hole 1700D, which is formed to penetrate the upper surface side of the back baffle plate 170 from the gas flow path 1700C and is used for A hole for blowing the gas in the gas flow path 1700C toward the lower surface (rear surface) of the substrate W. In addition, in FIG. 3, although the blowing direction of the gas blown from the gas supply hole 1700D is a vertical upward direction, the blowing direction of the gas blown from the gas supply hole 1700D may be inclined outward in the radial direction.

_{In addition, the gas supply unit 170D supplies N 2 which} is an inert gas at, for example, 100 L/min to 500 L/min. In addition, a plurality of gas supply holes 1700D may be provided in the circumferential direction of the back baffle plate 170; in this case, for example, they are arranged at a pitch of 2 mm to 10 mm. Here, the operation of the gas supply unit 170D is controlled by a control unit described later.

The back surface barrier plate 170 is made of, for example, polyvinylidene fluoride (PVDF; polyvinylidene fluoride), which has high chemical resistance.

In addition, similarly to the back barrier plate 170, a ring-shaped reinforcement ring 181 surrounding the rotation base 51A is provided under the back barrier plate 170. In addition, similar to the back surface barrier plate 170, an annular base ring 182 surrounding the rotation base 51A is provided below the reinforcing ring 181.

The reinforcing ring 181 and the base ring 182 are made of, for example, polyetheretherketone (PEEK; polyetheretherketone) or the like.

The back barrier plate 170 is provided with a connecting screw portion 170E, which penetrates from the upper surface to the lower surface of the back barrier plate 170 and connects the back barrier plate 170 and the reinforcing ring 181 (further, the base ring 182).

In addition, on the outer edge of the back barrier plate 170 is formed: an eave portion 170F that extends radially outward than the upper end of the frame 171 located below the back barrier plate 170 and covers the upper end of the frame 171 .

By forming the eaves 170F, it is possible to prevent the atmosphere or the like of the processing liquid generated during the processing of the substrate W from directly infiltrating from below the back barrier spacer 170. However, there is a path in which the atmosphere of the processing liquid and the like in the housing 171 indirectly infiltrate from the discharge hole 171A provided for discharging the processing liquid and the like toward the lower side of the back barrier plate 170.

4 is another cross-sectional view schematically showing an example of the configuration of the back surface barrier plate 170 and the periphery of the back surface barrier plate 170 in the substrate processing apparatus of the present embodiment.

4 shows the rotation jig 51, the back barrier 170, the frame body 171, the processing cover 511, and the moving part 190 for moving the back barrier 170 in the vertical direction (ie, the Z direction in FIG. 4).

The moving part 190 is provided with a connecting part 190A connected to the reinforcing ring 181 and the base ring 182; a shaft 190B connected below the connecting part 190A and movable in the Z direction; and a spring 190C which surrounds the shaft 190B and is able to Stretch in the Z direction.

The shaft 190B is driven by a stepping motor (not shown) or the like to move in the Z direction. Thereby, the back surface barrier 170 can move in the Z direction, and can approach or leave with respect to the substrate W. Here, the operation of the shaft 190B is controlled by a control unit described later.

FIG. 5 is a perspective view showing an example of the rotation jig 51 and the back surface barrier plate 170 in a state where the substrate W is not arranged.

In FIG. 5, the rotation base 51A in the upper surface of the rotation jig 51 and the ring-shaped back surface barrier 170 surrounding the rotation base 51A are shown.

6 is a cross-sectional view showing an example of the configuration of the connecting screw portion 170E in the substrate processing apparatus of this embodiment. Fig. 6 is a cross-sectional view corresponding to the circumferential cross-section X-X' of the back barrier plate 170 in Fig. 5.

As shown in the example of FIG. 6, the connecting screw portion 170E connects the back barrier plate 170 and the reinforcing ring 181 (even the base ring 182), and the connecting screw portion 170E connects the back barrier plate through the reinforcing ring 181 and the base ring 182. 170 is connected to the moving part 190.

The connecting screw portion 170E is provided with an adjusting screw 1710B or an adjusting screw 1701C and a cap 1701A; the adjusting screw 1701B is tightened to make the back baffle plate 170 and the reinforcing ring 181 (even the base ring 182) close to each other; The adjusting screw 1701C is pressed in to form a gap between the reinforcing ring 181 and the base ring 182; the cap 1701A covers the adjusting screw 1701B and the adjusting screw 1701C, respectively.

According to the above configuration, by adjusting the press-fitting condition of the adjusting screw 1701B and the locking condition of the adjusting screw 1701C, that is, by adjusting the back baffle plate 170 and the moving part 190 connected by the reinforcing ring 181 and the base ring 182 The distance between (connection distance) can adjust the flatness of the back surface barrier 170 and control the distance with respect to the substrate W (that is, the width of the gap region 180) with high accuracy.

As described above, the distance between the substrate W and the back surface barrier 170 can be controlled with high precision, thereby enabling the substrate W and the back surface barrier 170 to be in a range where the substrate W and the back surface barrier 170 are not in contact with high accuracy in the chemical liquid treatment or drying process described later. The internal proximity can prevent the drug solution from entering the lower surface of the substrate W and improve the drying degree of the substrate W and the back surface barrier plate 170.

Here, the width of the gap region 180 is, for example, 0.1 mm or more and 1.0 mm or less. In addition, it is assumed that the deviation of the horizontal posture due to warpage of the substrate W or the like is 0.3 mm or less, for example.

FIG. 7 is a cross-sectional view showing another example of the structure of the outer edge portion of the back surface barrier plate 170 in the substrate processing apparatus of this embodiment.

As shown in the example of FIG. 7, a cleaning liquid spraying portion 170G for spraying the cleaning liquid toward the back end of the substrate W may be provided on the outer edge of the back barrier plate 170. The cleaning liquid spraying portion 170G may be provided at a plurality of locations in the circumferential direction of the back barrier plate 170. A cleaning liquid supply source, not shown, supplies the cleaning liquid to the cleaning liquid spray portion 170G. As the cleaning liquid, DIW (deionized water) or the like can be used.

In the example of FIG. 7, the washing liquid ejection portion 170G is located on the inner side in the radial direction than the eave portion 170F and on the outer side in the radial direction than the gas supply hole 1700D. In addition, the cleaning liquid ejection portion 170G is provided on the outer side surface of the back surface barrier plate 170, and the cleaning liquid ejected from the cleaning liquid ejection portion 170G reaches the substrate W while being along the outer side surface of the back surface barrier plate 170. The back end. The operation of the washing liquid ejection unit 170G is controlled by a control unit described later.

FIG. 8 is a cross-sectional view showing another example of the structure of the outer edge portion of the back surface barrier plate 170 in the substrate processing apparatus of this embodiment.

As shown in the example of FIG. 8, the washing liquid spraying portion 170G is provided on the upper surface (inclined surface) of the eave portion 170F, and sprays the washing liquid in the vertical direction along the outer wall of the back baffle plate 170. In addition, the cleaning liquid ejection portion 170G mainly cleans the back end of the substrate W.

The cleaning liquid ejection portion 170G ejects the cleaning liquid from holes of ψ0.5 to ψ2.0 (diameters of 0.5mm to 2.0mm). In addition, the washing liquid spraying portion 170G may be arranged in plural in the circumferential direction of the outer edge portion of the back baffle plate 170; in this case, it may also be arranged at two to eight places at equal intervals.

FIG. 9 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back surface barrier plate 170 in the substrate processing apparatus of this embodiment.

As shown in the example of FIG. 9, a photographing unit 200 for measuring the distance between the lower surface of the substrate W and the upper surface of the back surface barrier 170 may also be provided on the outer edge of the back surface barrier 170. The imaging unit 200 is, for example, a CMOS (Complementary Metal-Oxide Semiconductor) camera.

The imaging unit 200 photographs the shape of the rotating substrate W in side view and the shape of the back surface barrier 170 in side view from the outer side of the radial direction of the back barrier plate 170 multiple times, and frames each of them. Measure the distance between the lower surface of the substrate W and the upper surface of the back barrier spacer 170 by image analysis. Moreover, the imaging unit 200 can calculate the accessible distance between the substrate W and the back surface barrier 170 with high accuracy, so that the distance between the lower surface of the substrate W and the upper surface of the back surface barrier 170 becomes the minimum time. The lower surface of the dot substrate W does not contact the upper surface of the back surface barrier 170. In addition, the amount of distortion of the substrate W is specified by the variation width of the distance between the lower surface of the substrate W and the upper surface of the back barrier spacer 170.

In addition, the distortion amount of the substrate W may not be related to the imaging result of the imaging unit 200, but the communication unit 78 described later may be obtained from an external host computer or the like.

FIG. 10 is a functional block diagram showing an example of the connection relationship between the various elements of the substrate processing system 1 and the control unit 7.

The hardware configuration of the control unit 7 is the same as that of a general computer. That is, the control unit 7 is equipped with: CPU (central processing unit; central processing unit)) 71, which performs various arithmetic processing; ROM (read only memory; read only memory) 72, which belongs to read-only memory, Used to memorize basic programs; RAM (random access memory; random access memory) 73 is a freely readable memory for storing various information; and non-temporary memory 74 is an application program for memory control (Program) or data, etc.

The CPU 71, the ROM 72, the RAM 73, and the storage unit 74 are connected to each other by the bus wiring 75 and the like.

The control application program or data can also be provided to the control unit 7 in a state where it has been recorded on a non-transitory recording medium (such as a semiconductor memory, an optical medium, or a magnetic medium, etc.). In this case, a reading device for reading control applications or data from the recording medium can also be connected to the bus wiring 75.

In addition, control applications or data can also be provided to the control unit 7 from a server or the like via a network. In this case, the communication part for network communication with the external device can also be connected to the bus wiring 75.

The input unit 76, the display unit 77, and the communication unit 78 are connected to the bus wire 75. The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal screen, and displays various information. The communication unit 78 communicates with an external host computer, etc., and receives information related to the driving amount of the motor and the like in the moving unit 190.

The control unit 7 is connected to the operating units of each substrate processing apparatus (e.g., the chemical liquid valve 56, the circulation valve 58, the cleaning liquid valve 62, the cleaning liquid valve 66, the shutter 50C, the rotation motor 51D, the gas supply unit 170B, the gas supply Section 170D, shaft 190B, washing liquid ejection section 170G, or imaging section 200, etc.), a drive section for driving the transport mechanism 31 (e.g., a motor for reciprocating movement of the transport mechanism 31, etc.), and an action section of the index robot 23 (e.g., Used to drive the motor of the articulated arm 23B, etc.) and the movement part of the transport robot 33 (for example, the horizontal motor 133C, the rotation motor 133D, or the vertical motor 133H, etc.), and control the movement parts, driving parts, and indexing robots 23 The movement of the movement part and the movement part of the transport robot 33.

[Actions for substrate processing equipment] Next, the operation of the substrate processing apparatus of this embodiment will be described with reference to FIGS. 11 to 14. Here, FIG. 11 shows a flowchart of the operation of the substrate processing system of this embodiment. In addition, FIG. 12, FIG. 13, and FIG. 14 are figures which show the example of the state in the processing process of the substrate processing apparatus of this embodiment.

As shown in the example of FIG. 11, first, the substrate W accommodated in the substrate storage container 21 is integrated into a certain substrate processing apparatus via the index robot 23, the transport mechanism 31, and the transport robot 33. Next, the substrate W is held by the rotation jig 51 (step ST1 in FIG. 11).

Next, chemical solution treatment is performed (step ST2 in FIG. 11). In the chemical liquid processing, the chemical liquid is ejected from the chemical liquid nozzle 52 under the control of the control unit 7 to perform etching processing and the like of the rotating substrate W. For example, the substrate W is etched using hydrofluoric acid (HF; hydrofluoric acid) and nitric acid (HNO ₃ ), which is a mixed solution of hydrofluoric acid (HNO 3 ).

In addition, as shown in the example of FIG. 12, in the chemical solution treatment, under the control of the control unit 7, the moving unit 190 raises and lowers the back barrier plate 170 so that the width of the gap area 180 in the Z direction is greater than the stepped portion. 170A is also close to the outer side in the radial direction (that is, the position where the width of the gap region 180 is the narrowest in the Z direction) becomes, for example, 0.1 mm or more and 1.0 mm or less. In addition, in the chemical solution treatment, the rotation motor 51D is driven under the control of the control unit 7 to rotate the substrate W at a rotation speed of, for example, 100 rpm or more and 2000 rpm or less.

In addition, in the chemical solution processing, in order to suppress the intrusion of the chemical solution to the lower surface (rear surface) of the substrate W, the gap area 180 is adjusted from the gas supply hole 1700B (refer to FIGS. 3 and 4), for example, 100 L/min to 500 L/min. Inert gas such as nitrogen (N _{2) is supplied inside.} In addition, after the gas system supplied from the gas supply hole 1700B (refer to FIGS. 3 and 4) is blown to the rotation base 51A, a part of the gas flows into the gap area 180 (the upper direction in FIGS. 3 and 4), and A part of the gas flows into the lower part of the back baffle plate 170 and the inside of the frame body 171 (the lower direction in FIGS. 3 and 4).

Here, a protrusion 170C is provided at a position closer to the substrate W than the gas supply hole 1700B, thereby suppressing the ratio of the gas supplied from the gas supply hole 1700B (refer to FIGS. 3 and 4) flowing into the gap region 180; on the contrary; Therefore, the proportion of the gas supplied from the gas supply hole 1700B (see FIGS. 3 and 4) flowing into the lower part of the back barrier plate 170 and the inside of the frame 171 increases.

Furthermore, an inert gas such as _{nitrogen (N 2} ) is also supplied from the gas supply hole 1700D into the gap region 180 (especially the back end of the substrate W) at, for example, 100 L/min to 500 L/min.

During the chemical liquid treatment, the cleaning liquid can also be sprayed from the cleaning liquid spraying portion 170G. Thereby, the liquid film of the cleaning liquid supplied from the cleaning liquid ejection portion 170G below the substrate W becomes a barrier, and it is suppressed that the chemical liquid circumventing from above the substrate W enters the radial direction from the back end of the substrate W Inside.

Next, a washing process is performed (step ST3 in FIG. 11). In the cleaning process, the cleaning liquid is sprayed from the cleaning liquid nozzle 64 under the control of the control unit 7, thereby washing the substrate W and the backside barrier plate 170, and even cleaning the deposits in the processing cover 511 and the like (refer to Figure 13). In the cleaning process, under the control of the control unit 7, the moving unit 190 lifts the back barrier plate 170 so that the width of the gap area 180 in the Z direction is closer to the outer side in the radial direction than the stepped portion 170A (that is, the gap The width of the region 180 in the Z-direction is the narrowest part) that is longer than the width of the gap region 180 in the Z-direction during the chemical solution treatment, for example, it is 1.5 mm to 5 mm.

Since the cleaning liquid sprayed from the cleaning liquid nozzle 64 is wound to the lower surface (rear side) of the substrate W, the cleaning liquid is also supplied to the back barrier plate 170.

As shown in the example of FIG. 13, the substrate W and the backside barrier spacer 170 are cleaned in the cleaning process. At this time, the washing liquid can also be sprayed from the washing liquid spraying portion 170G. Thereby, the liquid film of the cleaning liquid supplied from the cleaning liquid ejection portion 170G below the substrate W becomes a barrier, which prevents the cleaning liquid from entering from above the substrate W from entering into the diameter from the back end of the substrate W. The inside of the direction. In addition, the cleaning liquid is also ejected from the cleaning liquid ejection portion 170G, thereby effectively removing the chemical liquid and the like on the lower surface of the substrate W that cannot be cleaned by the cleaning liquid nozzle 64 alone.

In order to supply the washing liquid sprayed vertically upward from the washing liquid spraying portion 170G to the back end of the substrate W, the outer edge of the substrate W is desirably extended to the outer side in the radial direction than the outer edge of the back barrier spacer 170. In the example of FIG. 13, the outer edge of the substrate W extends outward in the radial direction from the outer edge of the back barrier spacer 170 by, for example, 0.5 mm to 3 mm.

In addition, in the cleaning process, an inert gas such as _{nitrogen (N 2} ) is supplied into the gap region 180 from the gas supply hole 1700B (refer to FIGS. 3 and 4) at, for example, 100 L/min to 500 L/min. Furthermore, an inert gas such as _{nitrogen (N 2} ) is also supplied from the gas supply hole 1700D into the gap region 180 (especially the back end of the substrate W) at, for example, 100 L/min to 500 L/min.

In addition, in the above-mentioned cleaning process, although cleaning is performed by the cleaning liquid sprayed from the cleaning liquid nozzle 64, for example, the gap area 180 may be cleaned in the cleaning process in which the cleaning liquid is sprayed from the cleaning liquid nozzle 60 In this way, the substrate W and the backside barrier spacer 170 are cleaned.

Next, a drying process is performed (step ST4 in FIG. 11). In the drying process, the rotation base 51A is rotated under the control of the control unit 7 to dry the substrate W and the back surface barrier plate 170.

In addition, as shown in the example of FIG. 14, in the drying process, under the control of the control unit 7, the moving unit 190 raises and lowers the back barrier plate 170 so that the width of the gap area 180 in the Z direction becomes, for example, 0.1 mm or more. To below 1.0mm. In this state, the lower surface of the substrate W and the upper surface of the opposing back barrier spacer 170 are close to each other.

In addition, in the drying process, an inert gas such as _{nitrogen (N 2} ) is supplied into the gap region 180 from the gas supply hole 1700B (see FIGS. 3 and 4) at, for example, 100 L/min to 500 L/min. In addition, an inert gas such as _{nitrogen (N 2} ) is also supplied from the gas supply hole 1700D into the gap region 180 (especially the back end of the substrate W) at, for example, 100 L/min to 500 L/min.

In the drying process, the cleaning liquid adhering to the substrate W and the back surface barrier 170 is scattered by the rotation of the substrate W.

Specifically, the cleaning liquid adhering to the upper surface and the lower surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W and scatters from the outer edge of the substrate W toward the periphery of the substrate W.

In addition, since one of the cleaning liquids attached to both the lower surface of the substrate W and the upper surface of the back barrier spacer 170 (that is, the cleaning liquid whose droplet size is larger than the width of the gap region 180 in the Z direction) The side in contact with the lower surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W, and therefore is pushed out toward the outer edge of the substrate W and scatters toward the periphery of the substrate W.

In addition, the cleaning solution attached only to the upper surface of the backside barrier plate 170 (that is, the cleaning solution whose droplet particle size is smaller than the width of the gap region 180 in the Z direction) is generated by the rotation of the substrate W. The flow of the atmosphere (including fine particles floating in the gap region 180) on the outside in the radial direction (for example, the velocity in the circumferential direction is 20m/s to 60m/s) is pushed out toward the outer edge of the substrate W and scattered around the substrate W .

In the center portion of the substrate W, the cleaning liquid adhering to the lower surface of the substrate W and the cleaning liquid adhering to the upper surface of the back barrier spacer 170 are mainly passed through the gas supply hole 1700B (refer to FIGS. 3 and 4) The supplied inert gas is pushed out toward the outer edge of the substrate W.

On the other hand, in the outer edge portion of the substrate W, the application of centrifugal force generated by the rotation of the substrate W becomes larger, so that the weak application of the inert gas supplied from the central portion of the back barrier spacer 170 can be compensated.

Here, although it is desirable to remove all the cleaning liquid in the drying process, it is not limited to the case of removing all the cleaning liquid. In addition, as shown in the example in FIG. 14, although the cleaning liquid sprayed from the cleaning liquid spraying portion 170G may remain on the back barrier plate 170, the cleaning liquid spraying portion 170G runs along the outer surface of the back barrier plate 170. Since the side surface remains, the area where the cleaning liquid is likely to remain becomes the outer surface of the back barrier plate 170. Therefore, even in the case where the cleaning solution remains, it is difficult to affect the processing of the substrate W.

Next, the processed substrate W is removed from the rotation jig 51, the substrate W is carried out from the substrate processing apparatus, and the operation is terminated (step ST5 in FIG. 11). In addition, when the substrate W is unloaded, the back barrier spacer 170 is moved by the moving part 190, so that the distance between the lower surface of the substrate W and the upper surface of the back barrier spacer 170 becomes, for example, 7 mm to 15 mm.

[For segmentation] As described above, in the chemical solution treatment, washing treatment, and drying treatment, at least gas is supplied from the gas supply hole 1700B, whereby the gas system flows from the inside in the radial direction of the gap region 180 to the outside in the radial direction.

In this case, by the step portion 170A formed on the upper surface of the back barrier plate 170, the width of the gap area 180 located on the radially outer side than the step portion 170A in the Z direction becomes the gap area on the inner side of the radial direction. The width of 180 in the Z direction is still narrow.

In this way, the gas system supplied from the gas supply hole 1700B has a uniform pressure on the inner side of the step portion 170A in the radial direction, and is discharged toward the outer side of the step portion 170A in the radial direction in a state where the pressure has become uniform. Therefore, it is possible to effectively suppress the intrusion of the treatment liquid (for example, the atmosphere of the chemical liquid, the cleaning liquid, the chemical liquid, and the cleaning liquid, or the chemical liquid that has been splashed back to the processing cover 511) by the discharge of the uniform pressure gas. Washing liquid, etc.). In addition, it is also possible to effectively remove the processing liquid attached to the substrate W and the backside barrier plate 170 (mainly drying processing).

[Examples of changes to step parts] Fig. 15 is a cross-sectional view schematically showing a modified example of the step portion in the back barrier plate.

As shown in the example of FIG. 15, the back surface barrier plate 170X includes a plurality of step portions 172. The step portion 172 is formed to extend in the circumferential direction of the back barrier plate 170X. In the portion where the step portion 172 is formed, the outer middle gap region 180 in the radial direction is narrower than the inner side in the radial direction.

In the portion where the stepped portion 172 is formed, the gas is blocked in the radially inner side of the stepped portion 172 and a pressure loss is generated, whereby the pressure becomes uniform, and the gas flows toward the diameter of the stepped portion 172 in a state where the pressure has become uniform. The outside of the direction is discharged. Therefore, by discharging the gas with a uniform pressure, it is possible to suppress the entrapment of the processing liquid to the lower surface of the substrate W.

Fig. 16 is a cross-sectional view schematically showing another modified example of the step portion in the back barrier plate.

As shown in the example of FIG. 16, the back surface barrier plate 170Y includes a plurality of step portions 173. The step portion 173 is formed to extend along the circumferential direction of the back barrier plate 170Y. By forming a plurality of stepped portions 173 in a stepped shape, the outer middle gap region 180 in the radial direction is narrower than the inner side in the radial direction.

By forming the step portion 173, the gas is blocked on the inner side in the radial direction and a pressure loss is generated, whereby the pressure becomes uniform, and the gas is discharged toward the outer side in the radial direction in a state where the pressure has become uniform. Therefore, by discharging the gas with a uniform pressure, it is possible to suppress the entrapment of the processing liquid to the lower surface of the substrate W.

In addition, the shape that is formed on the upper surface of the back surface barrier and narrows the width of the gap region 180 is not limited to the above-mentioned step portion. For example, the gap region 180 may be gradually formed from the inner side in the radial direction to the outer side in the radial direction. The width of the narrowed oblique shape.

[For the effects produced by the implementation described above] Next, an example of the effect produced by the embodiment described above is shown. In addition, in the following description, although the effect is described based on the specific configuration exemplified in the embodiment described above, it may be replaced with another specific configuration exemplified in this specification within a range that produces the same effect. .

According to the embodiment described above, the substrate processing apparatus includes a holding part, a rotation driving part, and a counter plate. Here, the holding portion corresponds to, for example, the rotation base 51A. In addition, the rotation drive unit corresponds to, for example, the rotation motor 51D. In addition, the facing plate system corresponds to, for example, the back surface barrier plate 170. The rotation base 51A holds the substrate W rotatably. The rotation motor 51D rotates the rotation base 51A. The back barrier 170 surrounds the rotation base 51A when viewed from above. In addition, the backside barrier spacer 170 is arranged to face the substrate W. In addition, the back surface barrier plate 170 includes a first gas supply part and at least one displacement part. Here, the first gas supply unit corresponds to, for example, the gas supply unit 170B. In addition, the displacement portion corresponds to, for example, the step portion 170A. The gas supply part 170B is provided on the inner side in the radial direction, and supplies gas between at least the substrate W and the back surface barrier plate 170. The step portion 170A is provided on a surface facing the substrate W that is located outside the gas supply portion 170B in the radial direction. In addition, the distance between the radially outer side of the stepped portion 170A and the substrate W is shorter than the distance between the radially inner side of the stepped portion 170A and the substrate W.

According to this structure, the gas system supplied from the gas supply hole 1700B is blocked in the radial direction inner side of the step portion 170A and a pressure loss occurs, whereby the pressure becomes uniform, and the pressure becomes uniform toward the step portion 170A. The outside of the radial direction is discharged. Therefore, it is possible to effectively suppress the entrapment of the processing liquid to the lower surface of the substrate W by the discharge of the uniform pressure gas. In addition, it is also possible to effectively remove the processing liquid attached to the substrate W and the backside barrier plate 170 (mainly drying processing).

In addition, in the case where the above-mentioned configuration has appropriately added other configurations illustrated in this specification, that is, in the case where the above-mentioned configuration has appropriately added other configurations in this specification not mentioned, the same can occur. The effect of.

In addition, according to the above-described embodiment, the back barrier plate 170 is provided on the outer side in the radial direction than the stepped portion 170A: a second gas supply portion for supplying gas between the substrate W and the back barrier plate 170 . Here, the second gas supply unit corresponds to, for example, the gas supply unit 170D. According to this structure, even in the case where the uniformity of the pressure of the gas is insufficient due to the working accuracy of the material (resin, etc.) used to form the back barrier plate 170, it can be supplemented by the gas supply hole 1700D. The gas makes up for the uniformity of the gas pressure.

In addition, according to the above-described embodiment, the step portion 172 or the step portion 173 is provided in plural in the radial direction of the back barrier plate 170. According to such a configuration, the gas is temporarily blocked at a plurality of locations in the radial direction, so that the uniformity of the pressure of the gas discharged from the gap region 180 is improved.

In addition, according to the above-described embodiment, the stepped portion 170A, the stepped portion 172, or the stepped portion 173 has a stepped shape extending along the circumferential direction of the back barrier spacer 170. According to this structure, the gas with a uniform pressure can be discharged in the entire circumferential direction of the back baffle plate 170.

In addition, according to the embodiment described above, the gas supply unit 170B supplies gas to the rotation base 51A. According to this configuration, a part of the gas system ejected from the gas supply hole 1700B to the rotation base 51A flows into the gap region 180 and the other part flows into the lower part of the back baffle plate 170 and into the frame 171. Therefore, it is possible to suppress the inflow of the processing liquid or the like into the gap region 180, and it is also possible to suppress the inflow of the processing liquid or the like into the underside of the back surface barrier plate 170 and into the frame 171.

In addition, according to the above-described embodiment, the gas supply portion 170B is provided on the side surface of the back surface barrier plate 170 on the inner side in the radial direction. In addition, the back surface barrier plate 170 is provided with a protrusion 170C, which is provided on the inner side surface in the radial direction, and is closer to the substrate W than the gas supply portion 170B. According to this configuration, since the proportion of the gas flow from the gas supply hole 1700B to the bottom of the back baffle plate 170 and the inside of the frame 171 is increased, it is possible to prevent the processing liquid (for example, the chemical liquid, the cleaning liquid, the chemical liquid and the cleaning liquid from becoming The atmosphere, or the chemical solution and cleaning solution that have been splashed back into the processing cover 511, flows into the lower part of the back baffle plate 170 and into the frame 171. In addition, since the gas is temporarily blocked by the protrusion 170C and the pressure becomes uniform in this part, the uniformity of the pressure of the gas flowing into the gap region 180 can be improved.

In addition, according to the embodiment described above, the substrate processing apparatus includes a moving unit 190 and a control unit 7. The moving part 190 is connected to the back barrier plate 170 and moves the back barrier plate 170 closer to or away from the substrate W. The control unit 7 controls the operation of the moving unit 190. According to this structure, since the distance between the substrate W and the back surface barrier 170 can be changed according to the content of the substrate processing, the width of the gap region 180 that is effective in various processing can be realized.

In addition, according to the above-described embodiment, the substrate processing apparatus includes an adjustment part for adjusting the connection distance between the moving part 190 and the back surface barrier plate 170. Here, the adjustment part corresponds to, for example, an adjustment screw 1701B or an adjustment screw 1701C. According to this structure, by adjusting the press-fitting condition of the adjusting screw 1701B and the locking condition of the adjusting screw 1701C, it is possible to control the back barrier plate 170 and the substrate W while considering the change in the gap area 180 caused by the dead weight or wind pressure. The distance between (that is, the width of the gap area 180).

In addition, according to the embodiment described above, the substrate processing apparatus includes the imaging unit 200 for imaging the substrate W. In addition, the control unit 7 controls the operation of the moving unit 190 in accordance with the shape of the side view of the substrate W in the image captured by the imaging unit 200. According to this configuration, the distance between the lower surface of the substrate W and the upper surface of the back barrier spacer 170 can be controlled with high accuracy using the captured image.

In addition, according to the above-described embodiment, the substrate processing apparatus includes: a chemical liquid supply unit for supplying chemical liquid to the substrate W; and a cleaning liquid supply unit for supplying cleaning liquid to the substrate W. Here, the chemical liquid supply unit corresponds to the chemical liquid nozzle 52, for example. In addition, the washing liquid supply unit corresponds to the washing liquid nozzle 64, for example. In addition, the control unit 7 controls the operation of the moving unit 190 so that the distance between the back surface barrier plate 170 and the substrate W during the supply of the cleaning liquid from the cleaning liquid nozzle 64 becomes longer than that of the liquid supply from the liquid nozzle 52. During the liquid period, the distance between the back surface barrier plate 170 and the substrate W is still long. According to this configuration, it is possible to control the intrusion of the chemical solution to the lower surface of the substrate W, and to ensure a wide range of cleaning of the lower surface of the substrate W by the cleaning liquid.

In addition, according to the embodiment described above, in the substrate processing apparatus, the back surface barrier plate 170 is provided with: an end cleaning liquid ejection portion, which is provided along the outer side surface in the radial direction and used to face the end of the substrate W The washing liquid is sprayed from the part. Here, the end washing liquid spraying portion corresponds to, for example, the washing liquid spraying portion 170G. According to this structure, the liquid film of the cleaning liquid supplied from the cleaning liquid ejection portion 170G below the substrate W becomes a barrier, which prevents the processing liquid (chemical solution or cleaning liquid, etc.) from entering from above the substrate W. It enters from the back end of the substrate W to the inner side in the radial direction. In addition, the cleaning liquid is also ejected from the cleaning liquid ejection portion 170G, thereby effectively removing the chemical liquid and the like on the lower surface of the substrate W that cannot be cleaned by the cleaning liquid nozzle 64 alone. In addition, since the cleaning liquid ejection portion 170G is located on the outer surface of the back barrier plate 170, the area where the cleaning liquid is likely to remain becomes the outer surface of the back barrier plate 170. Therefore, even in the case where the cleaning solution remains, it is difficult to affect the processing of the substrate W.

[For the modification examples in the embodiment described above] In the embodiments described above, although there are cases where the materials, materials, dimensions, shapes, relative arrangement relationships, or implementation conditions of each component are also described, these descriptions are only in all the embodiments. It is an example, and it is not a limitation of these embodiments described in the cost specification.

Therefore, countless modified examples and equivalents that are not illustrated are envisaged within the technical scope disclosed in this specification. For example, it also includes the case where at least one component is changed, the case where at least one component is added, and the case where at least one component is omitted.

In addition, in the embodiment described above, in the case where the material name is not specifically stated, etc., as long as there is no contradiction, the material may be regarded as including other additives, for example, the material may also be regarded as including There are alloys and so on.

1: Substrate processing system 2: Index area 3: Processing area 3A: Transport module 3B: Processing module 7: Control Department 21: substrate container 22,133A: Taiwan 23: Index Robot 23A: Abutment 23B: Multi-joint arm 23C, 23D, 33C, 33D: hands 31: Handling mechanism 33: Handling robot 33A: Horizontal drive section 33B: Vertical drive unit 33E: Pillar 33F: Connecting tool 50: processing room 50A: Next door 50B: Opening 50C: Door 51: Rotation fixture 51A: Rotation base 51C: Rotation axis 51D: Rotation motor 52: Liquid Nozzle 53: medicine tank 54: Chemical piping 55: Liquid feeding device 56: Liquid valve 57: Circulation piping 58: Circulation valve 59: Temperature adjustment device 60: Cleaning fluid nozzle 61: Cleaning fluid piping 62: Cleaning fluid valve 64: Detergent nozzle 65: Detergent piping 66: Detergent valve 71: CPU 72: ROM 73: RAM 74: Memory Department 75: bus wiring 76: Input section 77: Display 78: Ministry of Communications 100A, 100B, 100C: substrate processing equipment 133B: Horizontal slider 133C: Horizontal motor 133D: Rotating motor 133G: Vertical slider 133H: Vertical motor 152: Medicine Arm 152A, 160A: Rotation drive source 152B, 160B: shaft 152C, 160C: Arm 160: cleaning fluid arm 170, 170X, 170Y: back barrier 170A, 172, 173: step section 170C: Protruding part 170B, 170D: Gas supply unit 170E: Connecting screw part 170F: Eaves 170G: Washing liquid spray part 171: Frame 171A: discharge hole 180: Clearance area 181: Reinforcement Ring 182: Base Ring 190: Mobile Department 190A: Connection part 190B: Shaft 190C: Spring 200: Filming Department 511: Treatment hood 513: Drain 515: Exhaust Port 1700A, 1700C: gas flow path 1700B, 1700D: gas supply hole 1701A: Cap 1701B, 1701C: adjustment screw TW: Processing Tower W: substrate Z: axis of rotation Z1: axis of rotation

Fig. 1 is a diagram schematically showing an example of the configuration of the substrate processing system of the embodiment. Fig. 2 is a diagram schematically showing an example of the configuration of a substrate processing apparatus in the substrate processing system of the embodiment. [Fig. 3] Fig. 3 is a cross-sectional view schematically showing an example of the configuration of the back surface barrier and the periphery of the back surface barrier in the substrate processing apparatus of the embodiment. [Fig. 4] Fig. 4 is another cross-sectional view schematically showing an example of the structure of the back surface barrier and the periphery of the back surface barrier in the substrate processing apparatus of the embodiment. [Fig. 5] A perspective view showing an example of a spin chuck and a backside barrier plate in a state where the substrate is not arranged. Fig. 6 is a cross-sectional view showing an example of the configuration of the connecting screw portion in the substrate processing apparatus of the embodiment. [Fig. 7] Fig. 7 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back surface barrier plate in the substrate processing apparatus of the embodiment. [Fig. 8] Fig. 8 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back surface barrier plate in the substrate processing apparatus of the embodiment. [Fig. 9] Fig. 9 is a cross-sectional view showing another example of the configuration of the outer edge portion of the back surface barrier plate in the substrate processing apparatus of the embodiment. [FIG. 10] A functional block diagram showing an example of the connection relationship between the various elements of the substrate processing system and the control unit. Fig. 11 is a flowchart showing the operation of the substrate processing system of the embodiment. Fig. 12 is a diagram showing an example of a situation in a processing step of the substrate processing apparatus of the embodiment. Fig. 13 is a diagram showing an example of a situation in a processing step of the substrate processing apparatus of the embodiment. Fig. 14 is a diagram showing an example of a situation in a processing step of the substrate processing apparatus of the embodiment. [Fig. 15] is a cross-sectional view schematically showing a modified example of the step portion in the back barrier plate. [Fig. 16] is a cross-sectional view schematically showing another modified example of the step portion in the back barrier plate.

51: Rotation fixture

51A: Rotation base

51C: Rotation axis

51D: Rotation motor

170: back barrier

170A: step section

170C: Protruding part

170B, 170D: Gas supply unit

170E: Connecting screw part

170F: Eaves

171: Frame

171A: discharge hole

180: Clearance area

181: Reinforcement Ring

182: Base Ring

511: Treatment hood

1700A, 1700C: gas flow path

1700B, 1700D: gas supply hole

W: substrate

Z: axis of rotation

Claims (11)

A substrate processing device, which is provided with: The holding part is used to rotatably hold the substrate; The rotation driving part is used to rotate the aforementioned holding part; and The opposing plate surrounds the holding portion and is opposite to the base plate when viewed from above; The aforementioned opposing board system has: The first gas supply part is provided on the inner side in the radial direction, and is used to supply gas between at least the aforementioned substrate and the aforementioned opposed plate; and At least one displacement portion is provided on the surface facing the substrate, which is located on the outer side in the radial direction than the first gas supply portion, and between the outer side in the radial direction and the substrate in the radial direction than the inner side in the radial direction. The distance is shorter. The substrate processing apparatus according to claim 1, wherein the opposed plate is located on the outer side in the radial direction than the displacement portion, and further includes: a second gas supply portion that faces between the substrate and the opposed plate Supply gas. The substrate processing apparatus according to claim 1 or 2, wherein the displacement portion is provided in plural in the radial direction of the opposing plate. The substrate processing apparatus according to claim 1 or 2, wherein the displacement portion has a stepped shape extending in the circumferential direction of the opposing plate. The substrate processing apparatus according to claim 1 or 2, wherein the first gas supply part supplies the gas to the holding part. The substrate processing apparatus according to claim 1 or 2, wherein the first gas supply part is provided on the inner side surface of the opposing plate in the radial direction; The opposing plate system further includes a protruding portion provided on the inner side surface in the radial direction and closer to the substrate than the first gas supply portion. The substrate processing apparatus described in claim 1 or 2, which further includes: The moving part is connected to the opposing plate and is used to move the opposing plate closer to or away from the substrate; and The control unit controls the operation of the aforementioned moving unit. The substrate processing apparatus according to claim 7, which further includes: an adjustment part for adjusting the connection distance between the moving part and the opposing plate. The substrate processing apparatus according to claim 7, which further includes: a photographing unit that photographs the aforementioned substrate; The control unit controls the movement of the moving unit according to the shape of the side view of the substrate in the image captured by the imaging unit. The substrate processing apparatus described in claim 7, which further includes: The chemical liquid supply part is used to supply chemical liquid to the aforementioned substrate; and The cleaning liquid supply part is used to supply cleaning liquid to the aforementioned substrate; The control unit controls the operation of the moving unit so that the distance between the counter plate and the substrate during the period when the cleaning solution is supplied by the cleaning solution supply unit becomes longer than that by the chemical solution supply unit. The distance between the opposing plate and the substrate during the supply of the chemical solution is still long. The substrate processing apparatus according to claim 1 or 2, wherein the opposed plate is further provided with: an end cleaning solution spraying portion, which is provided along the outer side surface in the radial direction, and is used to align the end of the substrate Spray the detergent.

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