JP2009054959A - Substrate treating equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate treating equipment capable of preventing a variation in treatment between substrates. <P>SOLUTION: A chemical supply pipe 15 extending from a mixture unit 14 is connected to a chemical nozzle 3. A chemical undiluted solution supply pipe 16 and a first DIW supply pipe 17 are connected to the mixture unit 14. A chemical is supplied from a chemical supply source to a chemical undiluted solution supply pipe 16. A DIW circulation passage 23 for returning DIW to a DIW line 20 branches from a branch 27 of the middle of the first DIW supply pipe 17. A temperature sensor 24 is disposed in the middle of the DIW circulation passage 23. A flow ratio of a chemical undiluted solution supplied to the mixture unit 14 to DIW is adjusted based on the output of the temperature sensor 24. Therefore, the density of chemical supplied to a substrate W from the chemical nozzle 3 (the density of chemical properties) is changed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus used for processing a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, A photomask substrate or the like is included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, there is a single-wafer type substrate processing apparatus that processes substrates one by one in order to perform processing with a processing liquid on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. Sometimes used.
This single wafer type substrate processing apparatus includes a spin chuck that rotates a substrate while holding the substrate to be processed substantially horizontally, a nozzle for discharging a chemical on the surface of the substrate rotated by the spin chuck, And a chemical supply pipe for supplying the chemical to the nozzle. A mixing unit is connected to the chemical solution supply pipe. A chemical solution stock supply pipe to which a chemical solution stock solution from a chemical solution supply source is supplied and a dilution solution supply pipe to which a diluent for diluting the chemical solution stock is supplied are connected to the mixing unit. The mixing unit dilutes the chemical solution from the chemical solution supply pipe with the diluent from the dilution supply pipe to prepare a chemical solution of a predetermined concentration, and supplies the prepared chemical solution to the chemical supply pipe (for example, , See Patent Document 1).

For example, DIW (deionized water) is used as the diluent, and DIW from a DIW line that is commonly used in each facility in the factory is supplied to the diluent supply pipe.
JP 2004-281464 A

  However, when the liquid temperature of DIW flowing through the DIW line in the factory changes, the liquid temperature of DIW supplied to the diluent supply pipe also changes, and accordingly, the liquid temperature of the chemical liquid discharged from the nozzle also changes. The activity of a chemical solution depends on its temperature. Therefore, when the liquid temperature of the chemical solution supplied to the substrate changes, the substrate processing rate may change from a desired processing rate. For this reason, when processing with respect to a some board | substrate, there exists a possibility that a process may vary between board | substrates.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that can prevent variations in processing between substrates.

  The invention described in claim 1 for achieving the above object is to supply a processing liquid to the processing liquid nozzle (3) for discharging the processing liquid toward the substrate (W) and the processing liquid nozzle. Treatment liquid supply pipe (15) for concentration, concentration changing means (18, 21) for changing the concentration of the active component of the treatment liquid supplied from the treatment liquid supply pipe to the treatment liquid nozzle, and supply to the substrate And a control means for controlling the concentration changing means based on the liquid temperature of the processing liquid detected by the processing liquid temperature detecting means. (30) is a substrate processing apparatus (1).

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the concentration of the active component of the processing liquid supplied from the processing liquid nozzle to the substrate is changed based on the liquid temperature of the processing liquid supplied to the substrate. At this time, the control means treats the treatment liquid according to the liquid temperature of the treatment liquid detected by the treatment liquid temperature detection means so that the activity of the treatment liquid supplied from the treatment liquid nozzle to the substrate is substantially constant. It is preferable to control the concentration of the active component of the treatment liquid supplied to the nozzle. In this case, the activity of the processing liquid supplied to the substrate can be kept constant regardless of the temperature of the processing liquid. For this reason, the processing with the processing liquid can be performed on the substrate through a desired processing route. Thereby, the dispersion | variation in the process between board | substrates can be prevented.

  The invention according to claim 2 supplies the processing liquid stock solution supply pipe (16) for supplying the processing liquid stock solution containing the active component from the processing liquid supply source, and the dilution liquid from the dilution liquid supply source (20). A dilution liquid supply pipe (17), a treatment liquid stock solution supply pipe, and a dilution liquid supply pipe connected to the dilution liquid supply pipe, a treatment liquid stock solution from the treatment liquid stock solution supply pipe, and a dilution liquid from the dilution liquid supply pipe And a mixing section (14) for supplying the processing liquid prepared by mixing the processing liquid to the processing liquid supply pipe, and the concentration changing means is supplied from the processing liquid stock liquid supply pipe to the mixing section. Flow rate ratio adjusting means (18, 21) for adjusting the flow rate ratio between the processing solution stock solution and the diluent supplied from the diluent supply pipe to the mixing section, and the control means includes the flow rate ratio 2. The substrate processing apparatus according to claim 1, which controls the adjusting means. A.

According to this configuration, the concentration of the active component of the processing liquid supplied to the processing liquid supply pipe can be changed by adjusting the flow ratio of the processing liquid stock solution and the dilution liquid supplied to the mixing unit. For this reason, the density | concentration of the active component of the process liquid supplied to a board | substrate can be changed with a simple structure.
The invention according to claim 3 further includes a diluting liquid (23) circulation path that is branched and connected to a diverging section (27) in the middle of the diluting liquid supply pipe, and circulates the diluting liquid to the diluting liquid supply source. The processing liquid temperature detection means includes means for detecting a liquid temperature of the dilution liquid flowing through at least one of the dilution liquid supply pipe and the dilution liquid circulation path on the upstream side of the branch portion. Item 3. The substrate processing apparatus according to Item 2.

According to this configuration, based on the liquid temperature of the diluent flowing through at least one of the diluent supply pipe and the diluent circulation path on the upstream side of the branch portion, the processing liquid stock solution and the diluent supplied to the mixing portion The flow ratio is adjusted.
When the flow rate of the dilution liquid supplied to the mixing unit is extremely large compared to the flow rate of the processing liquid stock solution supplied to the mixing unit, the temperature of the dilution liquid supplied to the mixing unit is set to the processing liquid supplied to the substrate. It can be regarded as the liquid temperature. Thereby, the liquid temperature of the treatment liquid supplied to the substrate can be obtained by detecting the liquid temperature of the dilution liquid flowing through the dilution liquid supply pipe on the upstream side of the dilution liquid circulation path or the branch portion.

  Further, for example, when detecting the liquid temperature of the processing liquid discharged from the processing liquid nozzle toward the substrate and adjusting the flow rate ratio of the processing liquid stock solution and the dilution liquid supplied to the mixing unit based on the liquid temperature, Not only the processing solution having the proper concentration after the flow rate ratio is adjusted, but also the processing solution that is not the proper concentration before the flow rate ratio is adjusted is supplied to the substrate. For this reason, the substrate processing rate may change.

  On the other hand, based on the liquid temperature of the dilution liquid flowing through the dilution liquid supply pipe upstream of the dilution liquid circulation path and the branching section, the flow rate ratio of the processing liquid stock solution and the dilution liquid supplied to the mixing section is adjusted. In the configuration, after adjusting the flow rate ratio, the processing solution stock solution and the diluted solution with the adjusted flow rate ratio are supplied to the mixing unit, so that only the processing solution with the appropriate concentration after the flow rate ratio is adjusted is supplied to the substrate. Can do. For this reason, it is possible to more reliably perform the processing with the processing liquid on the substrate through a desired processing route, thereby further preventing variation in processing between the substrates.

According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, wherein the processing liquid temperature detecting means includes means (40) for detecting a liquid temperature of the processing liquid flowing through the processing liquid supply pipe. It is.
According to this configuration, the liquid temperature of the chemical liquid flowing through the processing liquid supply pipe is detected by the processing liquid temperature detecting means. Therefore, the liquid temperature of the processing liquid supplied to the substrate can be detected with high accuracy. For this reason, it is possible to more reliably perform the processing with the processing liquid on the substrate through a desired processing route, thereby further preventing variation in processing between the substrates.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view conceptually showing the structure of a substrate processing apparatus 1 according to an embodiment of the present invention.
The substrate processing apparatus 1 is a single wafer type apparatus for executing a cleaning process for removing contaminants from the substrate W using a chemical solution and DIW. This substrate processing apparatus 1 includes a spin chuck 2 for holding and rotating a substrate W substantially horizontally, and a chemical solution nozzle for discharging a chemical solution toward the surface (upper surface) of the substrate W held by the spin chuck 2. 3, a DIW nozzle 4 for supplying DIW as a rinsing liquid to the surface of the substrate W held on the spin chuck 2, and a chemical solution or DIW that surrounds the periphery of the spin chuck 2 and flows down or scatters from the substrate W And a container-like cup 5.

As chemicals discharged from the chemical nozzle 3, hydrofluoric acid, buffered hydrofluoric acid (Buffered HF: liquid mixture of hydrofluoric acid and ammonium fluoride), SC1 (ammonia hydrogen peroxide solution mixture) and SC2 (hydrochloric acid hydrogen peroxide solution mixture) Liquid) and the like.
The spin chuck 2 is provided at substantially equal intervals at a plurality of locations around the motor 6, a disk-shaped spin base 7 that is rotated around the vertical axis by the rotational driving force of the motor 6, and a peripheral portion of the spin base 7. And a plurality of clamping members 8 for clamping W in a substantially horizontal posture. Thereby, the spin chuck 2 keeps the substrate W in a substantially horizontal posture by rotating the spin base 7 by the rotational driving force of the motor 6 in a state where the substrate W is held by the plurality of holding members 8. In this state, it can be rotated around the vertical axis together with the spin base 7.

The spin chuck 2 is not limited to such a configuration, and for example, a vacuum suction type vacuum chuck may be employed. This vacuum chuck can hold the substrate W in a substantially horizontal posture by vacuum-sucking the lower surface of the substrate W. The vacuum chuck can rotate the substrate W while maintaining a substantially horizontal posture by rotating the substrate W around a substantially vertical axis while holding the substrate W. The chemical solution nozzle 3 and the DIW nozzle 4 are: It is attached to the tip of an arm 10 that extends substantially horizontally above the spin chuck 2. A base end portion of the arm 10 is supported by an upper end portion of an arm support shaft 11 that extends substantially vertically on the side of the cup 5. A nozzle drive mechanism 12 including a motor (not shown) is coupled to the arm support shaft 11. By inputting rotational force from the nozzle drive mechanism 12 to the arm support shaft 11 and rotating the arm support shaft 11, the arm 10 can be swung above the spin chuck 2.

A chemical liquid supply pipe 15 extending from the mixing unit 14 is connected to the chemical liquid nozzle 3. A chemical solution stock supply pipe 16 and a first DIW supply pipe 17 are connected to the mixing unit 14.
The chemical solution is supplied from the chemical supply source to the chemical solution supply pipe 16. DIW as a diluent is supplied to the first DIW supply pipe 17 from a DIW line 20 (DIW supply source) commonly used in each facility in the factory where the substrate processing apparatus 1 is disposed. The mixing unit 14 dilutes the chemical solution from the chemical solution supply pipe 16 with DIW from the first DIW supply pipe 17 (DIW having a flow rate approximately 80 to 220 times that of the chemical) to prepare a chemical solution with a predetermined concentration. The prepared chemical solution is supplied to the chemical solution supply pipe 15.

In the middle of the chemical solution supply pipe 16, a chemical solution flow rate adjustment valve 18 and a chemical valve 19 are interposed in this order from the mixing unit 14 side. The chemical stock solution supply pipe 16 is not provided with a temperature adjusting mechanism such as a heater, and the chemical solution stock solution whose temperature is not adjusted is supplied from the chemical solution stock supply pipe 16 to the mixing unit 14.
A DIW flow rate adjusting valve 21 and a first DIW valve 22 are interposed in this order from the mixing unit 14 side in the middle of the first DIW supply pipe 17.

  A DIW circulation path 23 for returning DIW to the DIW line 20 is branched from a branch portion 27 in the middle of the first DIW supply pipe 17. The other end of the DIW circuit 23 is connected to the DIW line 20. A temperature sensor 24 for detecting the liquid temperature of DIW circulating in the DIW circulation path 23 is interposed in the middle of the DIW circulation path 23. As described above, the mixing unit 14 is for diluting the chemical solution from the chemical solution supply pipe 16 with DIW from the first DIW supply pipe 17 (DIW having a flow rate about 80 to 220 times that of the chemical). For this reason, the liquid temperature of the chemical liquid supplied to the substrate W is substantially the same as the liquid temperature of the DIW flowing through the DIW circulation path 23, that is, the temperature detected by the temperature sensor 24. For this reason, the temperature detected by the temperature sensor 24 can be regarded as the temperature of the chemical solution supplied to the substrate W.

  In a state where the first DIW valve 22 is closed, DIW from the DIW line 20 reaches the branch portion 27 through the first DIW supply pipe 17 and circulates in a circulation path that returns to the DIW line 20 through the circulation path 23. When the first DIW valve 22 is opened, DIW from the DIW line 20 is supplied to the mixing unit 14 through the first DIW supply pipe 17. The first DIW supply pipe 17 is not provided with a temperature adjustment mechanism such as a heater. Therefore, DIW that is not temperature-adjusted is supplied from the first DIW supply pipe 17 to the mixing unit 14.

  When the chemical solution valve 19 and the first DIW valve 22 are opened, the chemical solution stock solution from the chemical solution supply source and the DIW from the DIW line 20 are supplied to the mixing unit 14 at a predetermined mixing ratio. Thereby, the chemical solution stock solution is diluted with DIW, and the chemical solution prepared to a predetermined concentration (concentration of the medicinal component) in the mixing unit 14 is prepared. And this chemical | medical solution is supplied to the chemical | medical solution nozzle 3 through the chemical | medical solution supply pipe | tube 15, and is discharged toward the downward direction from the chemical | medical solution nozzle 3. FIG.

  A second DIW supply pipe 25 to which DIW is supplied from a DIW supply source different from the DIW line 20 is connected to the DIW nozzle 4. A second DIW valve 26 is interposed in the middle of the second DIW supply pipe 25. When the second DIW valve 26 is opened, DIW is supplied from the second DIW supply pipe 25 to the DIW nozzle 4, and DIW is discharged from the DIW nozzle 4.

The DIW from the DIW line 20 may be supplied to the second DIW supply pipe 25.
FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 30 that includes a microcomputer including a CPU 31 and a memory 32.

In the control device 30, the motor 6, the nozzle drive mechanism 12, the chemical solution flow rate adjustment valve 18, the chemical solution valve 19, the DIW flow rate adjustment valve 21, the first DIW valve 22, the second DIW valve 26, and the like are controlled. It is connected.
In addition, a temperature sensor 24 is connected to the control device 30, and a detection signal output from the temperature sensor 24 is input to the control device 30.

In the memory 32, data indicating the relationship between the temperature of the DIW flowing through the DIW circulation path 23 and the concentration of the chemical liquid supplied to the chemical nozzle 3 (concentration of the medicinal component) (primary function formula) ) Is stored. A plurality of this data is stored for each processing rate in the chemical processing.
The control device 30 controls the operation of the motor 6 and the nozzle drive mechanism 12. Further, the control device 30 controls the opening and closing of the chemical liquid valve 19, the first DIW valve 22, and the second DIW valve 26, and controls the opening degree of the chemical liquid stock flow rate adjustment valve 18. Furthermore, the control device 30 controls the opening degree of the DIW flow rate adjustment valve 21 based on the detection signal output from the temperature sensor 24.

FIG. 3 is a process diagram for explaining a process performed in the substrate processing apparatus 1.
The substrate W to be processed is loaded into the substrate processing apparatus 1 by a transfer robot (not shown), and is held by the spin chuck 2 with its surface facing upward (step S1). During delivery of the substrate W to the spin chuck 2, the chemical nozzle 3 and the DIW nozzle 4 are retracted to the standby position on the side of the cup 5 so as not to hinder the loading of the substrate W.

  When the substrate W is held on the spin chuck 2, the control device 30 drives the motor 6 to rotate the spin chuck 2 at a constant liquid processing rotation speed at a constant speed (step S2). Further, the control device 30 controls the nozzle driving mechanism 12 to move the chemical solution nozzle 3 and the DIW nozzle 4 from the standby position on the side of the cup 5 to above the substrate W held on the spin chuck 2. .

Thereafter, the chemical liquid is discharged from the chemical nozzle 3 (step S4). Immediately before the discharge of the chemical solution from the chemical solution nozzle 3, the control device 30 refers to the output of the temperature sensor 24 (the temperature of the DIW flowing through the DIW circulation path 23), and based on the output, the DIW flow rate adjustment valve 21 Is controlled (step S3).
Specifically, the CPU 31 refers to the data (linear function equation) stored in the memory 32, and based on this data, the output of the temperature sensor 24 (the liquid temperature of the DIW flowing through the DIW circulation path 23). Calculate the concentration of the corresponding chemical solution. Then, the CPU 31 controls the opening degree of the DIW flow rate adjustment valve 21 so that the concentration of the chemical solution supplied to the chemical solution nozzle 3 becomes the concentration of the chemical solution calculated based on the data (equation of a linear function).

FIG. 4 is a graph showing an example of the relationship between the temperature of DIW flowing through the DIW circuit 23 (DIW TENP.) And the concentration of the chemical solution supplied to the chemical nozzle 3 (DHF concentration 1: X).
In FIG. 4, “■”, “▲”, “●”, and “♦” indicate the results of experiments performed using the substrate processing apparatus 1 of FIG. “■” in FIG. 4 indicates that the processing rate is 16.0 (Å / min), and “▲” in FIG. 4 indicates that the processing rate (etching rate) is 21.0 (Å / min). 4, “●” in FIG. 4 indicates that the processing rate is 25.0 (Å / min), and “♦” in FIG. 4 indicates that the processing rate is 30.0 (Å / min). When it is. In this experiment, dilute hydrofluoric acid (DHF: Dilute HF) is used as a chemical solution. The scale of DHF concentration on the vertical axis in FIG. 4 is a hydrofluoric acid stock solution (49% wt) supplied to the mixing unit 14. The flow rate ratio (mixing ratio) between DIW and DIW = 1: X.

  From this experimental result, it can be seen that the concentration of the chemical liquid to be supplied to the chemical nozzle 3 in order to achieve a constant processing rate can be regarded as a linear function of the liquid temperature of DIW flowing through the DIW circulation path 23. The four straight line graphs in FIG. 4 indicate the concentration of the chemical liquid to be supplied to the chemical nozzle 3 according to the liquid temperature of DIW flowing through the DIW circulation path 23 in order to obtain each constant processing rate. 4, corresponding to processing rates of 16.0 (Å / min), 21.0 (Å / min), 25.0 (Å / min), and 30.0 (Å / min), respectively, from the top in FIG. Is.

Then, by supplying a chemical solution having a concentration obtained by applying the output of the temperature sensor 24 to a graph corresponding to a desired processing rate to the substrate W, the activity of the chemical solution can be kept constant, and the chemical processing is performed. The processing rate of the substrate W can be set to a desired constant value.
In the example of FIG. 4, when the substrate W is processed with a chemical solution at a processing rate of 25.0 (Å / min), for example, the output of the temperature sensor 24 (liquid temperature of DIW flowing through the DIW circulation path 23) is 26. When the temperature is ° C., the CPU 31 causes the flow rate of DIW supplied from the first DIW supply pipe 17 to the mixing unit 14 to be about 150 times that of the chemical solution supplied from the chemical solution supply pipe 16 to the mixing unit 14. The opening degree of the DIW flow rate adjusting valve 21 is controlled.

After controlling the opening degree of the DIW flow rate adjustment valve 21, the control device 30 opens the chemical liquid valve 19 and the first DIW valve 22 (step S4).
When the chemical liquid valve 19 and the first DIW valve 22 are opened, the chemical liquid stock solution from the chemical liquid supply source and DIW from the DIW line 20 are mixed, and a predetermined concentration corresponding to the liquid temperature of DIW flowing through the first DIW supply pipe 17 Is prepared. Then, the chemical liquid supplied to the chemical nozzle 3 through the chemical supply pipe 15 is discharged downward from the chemical nozzle 3 and supplied to the surface of the rotating substrate W. Regardless of the temperature of the chemical solution supplied to the substrate W, a chemical solution whose activity is kept constant is supplied to the substrate W.

On the other hand, the control device 30 drives the nozzle drive mechanism 12 to swing the arm 10 within a predetermined angle range. As a result, the liquid deposition position (supply position) on the surface of the substrate W to which the chemical liquid from the chemical liquid nozzle 3 is guided is within the range from the rotation center of the substrate W to the peripheral edge of the substrate W and the rotation direction of the substrate W. Reciprocates while drawing intersecting arc-shaped trajectories.
The chemical solution supplied to the surface of the substrate W spreads over the entire surface of the substrate W. The chemical solution supplied to the surface of the substrate W cleans the surface of the substrate W.

After the processing with the chemical liquid is performed for a predetermined processing time, the control device 30 closes the chemical liquid valve 19 and the first DIW valve 22 and stops the discharge of the chemical liquid from the chemical liquid nozzle 3.
Referring to FIG. 3 again, next, the control device 30 opens the second DIW valve 26 while continuing the rotation of the substrate W and the swing of the arm 10. Thereby, DIW from the DIW nozzle 4 is supplied to the surface of the rotating substrate W (step S5).

On the other hand, the control device 30 drives the nozzle drive mechanism 12 to swing the arm 10 within a predetermined angle range. Thus, the liquid deposition position (supply position) on the surface of the substrate W to which DIW from the DIW nozzle 4 is guided is within the range from the rotation center of the substrate W to the peripheral edge of the substrate W, and the rotation direction of the substrate W. Reciprocates while drawing intersecting arc-shaped trajectories.
The DIW supplied to the surface of the substrate W spreads over the entire area of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Thereby, the chemical solution adhering to the surface of the substrate W is caused to flow.

  When the rinsing process is performed for a predetermined processing time, the control device 30 closes the second DIW valve 26 and stops the supply of DIW from the DIW nozzle 4. Thereafter, the control device 30 drives the motor 6 to accelerate the rotation speed of the substrate W to a predetermined drying speed (for example, 3000 rpm) (step S6). Thereby, DIW adhering to the substrate W is shaken off by centrifugal force.

When the spin drying is finished, the control device 30 drives the motor 6 to stop the rotation of the spin chuck 2. Thereafter, the substrate W is unloaded by a transfer robot (not shown) (step S7).
As described above, according to this embodiment, the CPU 31 refers to the data (linear function equation) stored in the memory 32, and determines the mixing unit 14 according to the liquid temperature of the DIW flowing through the first DIW supply pipe 17. The flow rate ratio of the chemical solution to be supplied and DIW is adjusted. Therefore, the concentration of the chemical supplied from the chemical nozzle 3 to the substrate W is changed according to the temperature of the chemical supplied to the substrate W so that the activity of the chemical supplied to the surface of the substrate W is constant. Is done. Therefore, the activity of the chemical liquid discharged from the chemical liquid nozzle 3 onto the substrate W can be kept constant regardless of the temperature of the chemical liquid. For this reason, the process by a chemical | medical solution can be performed with respect to the board | substrate W by a desired process route, and the dispersion | variation in the process between the board | substrates W can be prevented by this.

  In addition, for example, when the liquid temperature of the chemical liquid discharged from the chemical liquid nozzle 3 toward the substrate W is detected and the flow rate ratio of the chemical liquid stock and DIW supplied to the mixing unit 14 is adjusted based on the liquid temperature, Not only a chemical solution with an appropriate concentration after the ratio is adjusted, but also a chemical solution with an inappropriate concentration before the flow rate ratio is adjusted is supplied to the substrate W. For this reason, the processing rate of the substrate W may change.

  On the other hand, when the flow rate ratio of the chemical solution stock and DIW supplied to the mixing unit 14 is adjusted based on the temperature of the DIW flowing through the DIW circulation path 23, the chemical solution stock solution and DIW By supplying, it is possible to supply only the chemical solution having an appropriate concentration after the flow rate ratio is adjusted to the substrate W. Thereby, the chemical treatment can be more reliably performed on the substrate W by a desired processing route.

As mentioned above, although one Embodiment of this invention was described, this invention can also be implemented with another form.
For example, the temperature sensor 24 described above may be interposed not in the DIW circulation path 23 but in the first DIW supply pipe 17 upstream of the branch portion 27.
Further, instead of the temperature sensor 24 described above, a temperature sensor 40 (shown by a two-dot chain line in FIGS. 1 and 2) interposed in the middle of the chemical solution supply pipe 15 may be employed. The temperature sensor 40 detects the temperature of the chemical solution flowing through the chemical solution supply pipe 15, and an output signal of the temperature sensor 40 is input to the control device 30.

When the flow rate of DIW supplied to the mixing unit 14 is not sufficiently higher than the flow rate of the chemical solution supplied to the mixing unit 14 (for example, the flow rate of DIW is about 10 times or less than the flow rate of the chemical solution), the chemical solution The liquid temperature of the chemical liquid discharged from the nozzle 3 to the substrate W is not necessarily close to the liquid temperature of DIW flowing through the DIW circulation path 23.
In this case, it is desirable to employ a configuration in which the temperature sensor 40 interposed in the middle of the chemical solution supply pipe 15 is used. The liquid temperature of the chemical liquid supplied to the substrate W is detected, and the concentration of the chemical liquid supplied to the chemical liquid nozzle 3 is changed based on the detected liquid temperature. For this reason, the activity of the chemical liquid supplied to the substrate W can be kept constant, whereby the chemical liquid processing can be more reliably performed on the substrate W by a desired processing route.

  In the configuration in which the temperature sensor 40 is interposed in the middle of the chemical solution supply pipe 15, the concentration of the chemical solution supplied to the chemical solution nozzle 3 is changed before the substrate processing apparatus 1 starts processing the substrate W using the chemical solution. It is desirable that Specifically, pre-dispensing may be performed from the chemical liquid nozzle 3 in a state where the chemical liquid nozzle 3 is retracted to the standby position on the side of the cup 5. That is, the chemical liquid valve 19 and the first DIW valve 22 are opened, and the chemical liquid prepared in the mixing unit 14 flows through the chemical liquid supply pipe 15 and is discharged from the chemical liquid nozzle 3. Then, the temperature of the chemical solution flowing through the chemical solution supply pipe 15 is detected by the temperature sensor 40. Based on the output of the temperature sensor 40, the CPU 31 refers to the data (linear function equation) in the memory 32, and the concentration of the chemical solution supplied to the chemical solution nozzle 3 is calculated based on the data. The DIW flow rate adjustment valve 21 is controlled so that Thereafter, the CPU 31 refers to the output of the temperature sensor 40 again, and controls the DIW flow rate adjustment valve 21 so that the concentration of the chemical solution supplied to the chemical solution nozzle 3 becomes the concentration of the chemical solution corresponding to the output of the temperature sensor 40. To do. Then, until the change in the output of the temperature sensor 40 falls within a predetermined range (until the liquid temperature of the chemical liquid flowing through the chemical liquid supply pipe 15 is stabilized), the detection of the liquid temperature of the chemical liquid flowing through the chemical liquid supply pipe 15 and the chemical liquid nozzle 3 is repeated.

When the liquid temperature of the chemical liquid flowing through the chemical liquid supply pipe 15 is stabilized, the chemical liquid valve 19 and the first DIW valve 22 are closed, and the discharge of the chemical liquid from the chemical liquid nozzle 3 is stopped. Thereafter, the substrate processing apparatus 1 starts processing the substrate W using the chemical solution. Thereby, supply of the chemical | medical solution with a density | concentration inappropriate to the board | substrate W can be prevented.
For example, in the above-described embodiment, the concentration of the chemical solution supplied to the substrate W (the concentration of the medicinal component) is changed by controlling the opening degree of the DIW flow rate adjustment valve 21. The concentration of the chemical solution supplied to the substrate W may be changed by controlling both the opening of the chemical solution and the chemical solution flow rate adjustment valve 18, or only the opening of the chemical solution flow rate adjustment valve 18 is controlled. The concentration of the chemical solution supplied to the substrate W may be changed.

  Furthermore, in the above-described embodiment, the liquid temperature of the DIW flowing through the DIW circulation path 23 is referred to immediately before the chemical liquid is discharged from the chemical liquid nozzle 3, and the opening degree of the DIW flow rate adjusting valve 21 is determined based on the liquid temperature. Although described as being controlled, the present invention is not limited to this. When the substrate processing apparatus 1 is in operation, the liquid temperature of the DIW flowing through the DIW circulation path 23 is constantly monitored, and there is a change in the liquid temperature of the DIW. Alternatively, the opening degree of the DIW flow rate adjustment valve 21 may be controlled.

The chemical nozzle 3 may be a fixed nozzle that is fixed in position in the substrate processing apparatus 1.
Further, a temperature adjustment mechanism may be provided in the middle of the chemical solution supply pipe 16, and the temperature of the chemical solution may be supplied to the mixing unit 14.
In the above-described embodiment, the treatment with the chemical solution is performed only on the upper surface of the substrate W. However, the lower surface nozzle is disposed to face the lower surface of the substrate W, and the chemical solution from the lower surface nozzle is disposed on the lower surface of the substrate. The structure by which processing by is performed may be sufficient. In this case, the chemical solution supplied from the lower surface nozzle to the lower surface of the substrate W according to the temperature of the chemical solution supplied to the lower surface of the substrate W so that the activity of the chemical solution supplied to the lower surface of the substrate W is constant. The concentration of is changed.

Furthermore, in the above description, the case where the substrate W is processed using a chemical solution has been described as an example. However, when ozone water or electrolytic ion water other than the chemical solution is used for the substrate W, the substrate W is applied to the substrate W. The ozone concentration (or ion concentration) may be changed based on the liquid temperature of the supplied ozone water (or electrolytic ionic water).
Furthermore, in the above-described embodiment, DIW is exemplified as the diluting solution. However, in the case where a chemical solution is employed as the processing solution, carbonate water, electrolytic ionic water, ozone water, reducing water is also used as the diluting solution. Functional water such as (hydrogen water) or magnetic water can also be used.

  In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is process drawing for demonstrating the process example performed in a substrate processing apparatus. It is a graph which shows an example of the relationship between the liquid temperature of DIW which distribute | circulates a DIW circuit, and the density | concentration of the chemical | medical solution supplied to a chemical | medical solution nozzle.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Spin chuck 3 Chemical nozzle (processing liquid nozzle)
14 Mixing Unit 15 Chemical Solution Supply Pipe (Processing Liquid Supply Pipe)
16 Chemical solution stock supply pipe (Process solution stock supply pipe)
17 1st DIW supply pipe (diluent supply pipe)
18 Chemical stock flow control valve (Flow ratio control means)
20 DIW line (diluent supply source)
21 DIW flow control valve (flow ratio control means)
23 DIW circuit (diluent circuit)
24 Temperature sensor (Processing liquid temperature detection means)
27 Branching section 30 Control device (control means)
40 Temperature sensor (Processing liquid temperature detection means)
W substrate

Claims (4)

A processing liquid nozzle for discharging the processing liquid toward the substrate;
A treatment liquid supply pipe for supplying a treatment liquid to the treatment liquid nozzle;
Concentration changing means for changing the concentration of the active component of the processing liquid supplied from the processing liquid supply pipe to the processing liquid nozzle;
A processing liquid temperature detecting means for detecting the liquid temperature of the processing liquid supplied to the substrate;
And a control means for controlling the concentration changing means based on the liquid temperature of the processing liquid detected by the processing liquid temperature detecting means. A processing liquid stock solution supply pipe for supplying a processing liquid stock solution containing an active ingredient from a processing liquid supply source; and
A diluent supply pipe for supplying a diluent from a diluent source;
A treatment liquid prepared by mixing a treatment liquid stock solution from the treatment liquid stock solution supply pipe and a dilution liquid from the dilution liquid supply pipe connected to the treatment liquid stock solution supply pipe and the dilution liquid supply pipe, A mixing unit that supplies the processing liquid supply pipe,
The concentration changing means is a flow rate for adjusting a flow rate ratio between the processing solution stock solution supplied from the processing solution stock solution supply pipe to the mixing unit and the dilution solution supplied from the dilution solution supply pipe to the mixing unit. A ratio adjusting means,
The substrate processing apparatus according to claim 1, wherein the control unit controls the flow rate ratio adjusting unit. The diluting liquid supply pipe further includes a diluting liquid circulation path that is branched and connected to a diverging portion in the middle of the diluting liquid supply pipe and circulates the diluting liquid to the diluting liquid supply source.
The said process liquid temperature detection means includes a means to detect the liquid temperature of the dilution liquid which distribute | circulates at least one among the said dilution liquid supply pipe | tube upstream of the said branch part, and the said dilution liquid circulation path. The substrate processing apparatus as described.   3. The substrate processing apparatus according to claim 1, wherein the processing liquid temperature detecting means includes means for detecting a liquid temperature of the processing liquid flowing through the processing liquid supply pipe.

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