JP2020152582A - Iii族窒化物半導体の製造方法 - Google Patents
Iii族窒化物半導体の製造方法 Download PDFInfo
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Abstract
Description
本発明に用いるフラックス法は、フラックスとなるアルカリ金属と、原料であるIII 族金属とを含む混合融液に、窒素を含むガスを供給して溶解させ、液相でIII 族窒化物半導体をエピタキシャル成長させる方法である。
本発明では、混合融液中に種基板(種結晶)を配置し、その種基板上にIII 族窒化物半導体を育成する。種基板は、加熱、加圧する前から混合融液中に配置してもよいし、加熱、加圧して成長温度、成長圧力に達してから混合融液中に配置してもよい。種基板には、III 族窒化物半導体からなる自立基板や、テンプレート基板を用いることができる。
本発明のIII 族窒化物半導体の製造方法では、たとえば以下の構成の結晶成長装置1000を用いる。結晶成長装置1000は、Naフラックス法を用いてIII 族窒化物半導体の単結晶を成長させるためのものである。
次に、本発明のIII 族窒化物半導体の製造方法について説明する。まず、炉内雰囲気を不活性ガスに置換し、炉内を加熱し、その後真空引きすることにより、炉内の酸素を十分に低減する。
AlおよびSiの界面全量は、たとえば以下の方法によって低減することができる。1つは、材料として不純物が少ないものを用いることである。具体的には、坩堝CB1に配置する固体のアルカリ金属、固体のIII 族金属として、あるいは、炉に供給する窒素ガスとして、純度が高いものを用いる。
坩堝CB1をグローブボックス内に放置する時間を延ばし、グローブボックス内での作業時間の合計を20時間とした以外は実施例1と同様の条件で種基板上にGaN結晶を育成した。育成したGaN結晶は、実施例1と同様に種基板から剥離しており、厚さ0.7mm、曲率半径は0.5mであった。
CB1:坩堝
1100:圧力容器
1300:反応室
1410:側部ヒータ
1420:下部ヒータ
Claims (2)
- III 族金属とフラックスとを混合した混合融液に窒素を含むガスを供給して種基板上にIII 族窒化物半導体を育成するIII 族窒化物半導体の製造方法において、
育成した前記III 族窒化物半導体と前記種基板との間の界面単位面積当たりに含まれる全原子数を界面全量として、Alの界面全量が3×1014/cm2 以下、かつSiの界面全量が5×1014/cm2 以下、となるように前記III 族窒化物半導体を育成する、
ことを特徴とするIII 族窒化物半導体の製造方法。 - 前記III 族窒化物半導体の前記種基板との界面近傍における結晶粒の直径が14μm以上、結晶粒の密度が1×107 /cm3 以下となるように、前記III 族窒化物半導体を育成する、ことを特徴とする請求項1に記載のIII 族窒化物半導体の製造方法。
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JP2019049759A JP7147644B2 (ja) | 2019-03-18 | 2019-03-18 | Iii族窒化物半導体の製造方法 |
US16/817,128 US20200299858A1 (en) | 2019-03-18 | 2020-03-12 | Method for producing group iii nitride semiconductor |
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WO2024009683A1 (ja) * | 2022-07-06 | 2024-01-11 | パナソニックホールディングス株式会社 | Iii族窒化物結晶の製造方法 |
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CN114855281B (zh) * | 2022-07-07 | 2022-11-04 | 山西中科潞安半导体技术研究院有限公司 | 一种基于尺寸和形状控制的AlN晶体材料制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005154254A (ja) * | 2003-10-31 | 2005-06-16 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその製造方法、ならびにiii族窒化物結晶の製造装置 |
JP2007254201A (ja) * | 2006-03-23 | 2007-10-04 | Ngk Insulators Ltd | 単結晶の製造方法 |
JP2008150239A (ja) * | 2006-12-15 | 2008-07-03 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体結晶の製造方法 |
WO2010079655A1 (ja) * | 2009-01-07 | 2010-07-15 | 日本碍子株式会社 | 単結晶育成用の反応容器および単結晶の育成方法 |
WO2010092736A1 (ja) * | 2009-02-16 | 2010-08-19 | 日本碍子株式会社 | 3b族窒化物の結晶成長方法及び3b族窒化物結晶 |
JP2011230966A (ja) * | 2010-04-28 | 2011-11-17 | Mitsubishi Chemicals Corp | 第13族金属窒化物結晶の製造方法 |
JP2015199635A (ja) * | 2013-12-18 | 2015-11-12 | 日本碍子株式会社 | 窒化ガリウム自立基板、発光素子及びそれらの製造方法 |
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- 2019-03-18 JP JP2019049759A patent/JP7147644B2/ja active Active
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- 2020-03-12 US US16/817,128 patent/US20200299858A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005154254A (ja) * | 2003-10-31 | 2005-06-16 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその製造方法、ならびにiii族窒化物結晶の製造装置 |
JP2007254201A (ja) * | 2006-03-23 | 2007-10-04 | Ngk Insulators Ltd | 単結晶の製造方法 |
JP2008150239A (ja) * | 2006-12-15 | 2008-07-03 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体結晶の製造方法 |
WO2010079655A1 (ja) * | 2009-01-07 | 2010-07-15 | 日本碍子株式会社 | 単結晶育成用の反応容器および単結晶の育成方法 |
WO2010092736A1 (ja) * | 2009-02-16 | 2010-08-19 | 日本碍子株式会社 | 3b族窒化物の結晶成長方法及び3b族窒化物結晶 |
JP2011230966A (ja) * | 2010-04-28 | 2011-11-17 | Mitsubishi Chemicals Corp | 第13族金属窒化物結晶の製造方法 |
JP2015199635A (ja) * | 2013-12-18 | 2015-11-12 | 日本碍子株式会社 | 窒化ガリウム自立基板、発光素子及びそれらの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2024009683A1 (ja) * | 2022-07-06 | 2024-01-11 | パナソニックホールディングス株式会社 | Iii族窒化物結晶の製造方法 |
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