JP2020149988A5 - - Google Patents
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- Publication number
- JP2020149988A5 JP2020149988A5 JP2019043348A JP2019043348A JP2020149988A5 JP 2020149988 A5 JP2020149988 A5 JP 2020149988A5 JP 2019043348 A JP2019043348 A JP 2019043348A JP 2019043348 A JP2019043348 A JP 2019043348A JP 2020149988 A5 JP2020149988 A5 JP 2020149988A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor deposition
- silicon carbide
- carbide polycrystalline
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims 12
- 238000007740 vapor deposition Methods 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000002485 combustion reaction Methods 0.000 claims 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019043348A JP7234703B2 (ja) | 2019-03-11 | 2019-03-11 | 炭化ケイ素多結晶基板の製造方法、及び、炭化ケイ素多結晶基板の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019043348A JP7234703B2 (ja) | 2019-03-11 | 2019-03-11 | 炭化ケイ素多結晶基板の製造方法、及び、炭化ケイ素多結晶基板の製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020149988A JP2020149988A (ja) | 2020-09-17 |
| JP2020149988A5 true JP2020149988A5 (cg-RX-API-DMAC7.html) | 2022-01-18 |
| JP7234703B2 JP7234703B2 (ja) | 2023-03-08 |
Family
ID=72429850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019043348A Active JP7234703B2 (ja) | 2019-03-11 | 2019-03-11 | 炭化ケイ素多結晶基板の製造方法、及び、炭化ケイ素多結晶基板の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7234703B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024121436A (ja) * | 2023-02-27 | 2024-09-06 | 住友金属鉱山株式会社 | ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2625880B2 (ja) * | 1988-05-16 | 1997-07-02 | 三井造船株式会社 | ＳｉＣ製サセプタの製造方法 |
| JP2690862B2 (ja) * | 1994-07-29 | 1997-12-17 | シーケーディ株式会社 | 真空チャック装置からのワークの取り外し方法及びワークの取り外し装置 |
| JPH10265265A (ja) * | 1997-03-26 | 1998-10-06 | Mitsubishi Materials Corp | ＳｉＣ部材及びその製造方法 |
| JPH11199323A (ja) * | 1998-01-14 | 1999-07-27 | Tokai Carbon Co Ltd | ダミーウエハ |
| JP3881562B2 (ja) * | 2002-02-22 | 2007-02-14 | 三井造船株式会社 | ＳｉＣモニタウェハ製造方法 |
| JP2007182304A (ja) * | 2006-01-06 | 2007-07-19 | Tokyo Electron Ltd | 基板搬送装置、基板搬送方法及びコンピュータプログラム |
| JP5260127B2 (ja) * | 2008-04-18 | 2013-08-14 | 国立大学法人東北大学 | 炭化珪素の製造方法 |
| JP2015079946A (ja) * | 2013-09-13 | 2015-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN106688080A (zh) * | 2014-09-08 | 2017-05-17 | 三菱电机株式会社 | 半导体退火装置 |
| JP2018181969A (ja) * | 2017-04-07 | 2018-11-15 | 株式会社 天谷製作所 | 処理装置 |
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2019
- 2019-03-11 JP JP2019043348A patent/JP7234703B2/ja active Active