JP2020148804A - レーザリペア方法、レーザリペア装置 - Google Patents
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
Description
基板上に形成された多層膜構造の欠陥部にレーザ光を照射して修正加工を行うレーザリペア方法であって、前記欠陥部を含む領域の画像を取得し、前記欠陥部を含むように前記画像上に前記レーザ光の走査範囲を設定し、前記走査範囲内での前記レーザ光の走査時に、前記画像の色情報が欠陥部であると認識される走査位置で、前記レーザ光の出力をオンに又は高く制御することを特徴とするレーザリペア方法。
3:走査部,3A,3B:ガルバノミラー
4:カメラ部,5:制御部,
6:分光画像取得部,6A:分光器,6B:2Dカメラ,
7:白色光源,8:顕微鏡,8A:光学系,9:モニタ装置,
10,12:ミラー,11(11A,11B):ハーフミラー,
13:切り替えミラー,20:フィルタ,
100:基板,110:多層膜構造,
111:第1層(ポリシリコン層),112:第2層(メタル電極層),
113:第3層(絶縁層),114:第4層(保護層),
S:ステージ,P:光軸,L:レーザ光,W:欠陥部,F:走査範囲
Claims (7)
- 基板上に形成された多層膜構造の欠陥部にレーザ光を照射して修正加工を行うレーザリペア方法であって、
前記欠陥部を含む領域の画像を取得し、
前記欠陥部を含むように前記画像上に前記レーザ光の走査範囲を設定し、
前記走査範囲内での前記レーザ光の走査時に、前記画像の色情報が欠陥部であると認識される走査位置で、前記レーザ光の出力をオンに又は高く制御することを特徴とするレーザリペア方法。 - 前記レーザ光の走査は、前記走査範囲を複数回走査することを特徴とする請求項1記載のレーザリペア方法。
- 前記欠陥部を含む領域に白色光を照射し、前記領域からの反射光を分光して分光画像を取得し、
取得した前記分光画像によって、前記欠陥部の色情報を認識することを特徴とする請求項1又は2記載のレーザリペア方法。 - 前記分光画像によって、前記欠陥部の下地層の色情報を認識し、
前記走査範囲内での前記レーザ光の走査時に、前記画像の色情報が前記下地層であると認識される走査位置で、前記レーザ光の出力をオフに又は低く制御することを特徴とする請求項3記載のレーザリペア方法。 - 基板上に形成された多層膜構造の欠陥部にレーザ光を照射して修正加工を行うレーザリペア装置であって、
前記欠陥部を含む走査範囲にレーザ光を走査する走査部と、
前記欠陥部を含む領域の画像を取得するカメラ部と、
前記カメラ部が取得した画像に基づいて、前記走査部と前記レーザの出力を制御する制御部とを備え、
前記制御部は、前記レーザ光の走査時に、前記画像の色情報が欠陥部であると認識される走査位置で、前記レーザ光の出力をオンに又は高く制御することを特徴とするレーザリペア装置。 - 前記欠陥部を含む領域に白色光を照射し、前記領域からの反射光を分光した分光画像を取得する分光画像取得部を備え、
前記制御部は、前記分光画像によって、前記欠陥部の色情報を認識することを特徴とする請求項5記載のレーザリペア装置。 - 前記制御部は、前記分光画像によって、前記欠陥部の下地層の色情報を認識し、前記走査範囲内での前記レーザ光の走査時に、前記画像の色情報が前記下地層であると認識される走査位置で、前記レーザ光の出力をオフに又は低く制御することを特徴とすることを特徴とする請求項6記載のレーザリペア装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019043524A JP2020148804A (ja) | 2019-03-11 | 2019-03-11 | レーザリペア方法、レーザリペア装置 |
CN202080017234.0A CN113518682B (zh) | 2019-03-11 | 2020-02-07 | 激光修复方法、激光修复装置 |
KR1020217027234A KR20210136005A (ko) | 2019-03-11 | 2020-02-07 | 레이저 리페어 방법, 레이저 리페어 장치 |
US17/438,228 US20220184729A1 (en) | 2019-03-11 | 2020-02-07 | Laser repair method and laser repair device |
PCT/JP2020/004877 WO2020184024A1 (ja) | 2019-03-11 | 2020-02-07 | レーザリペア方法、レーザリペア装置 |
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JP2019043524A JP2020148804A (ja) | 2019-03-11 | 2019-03-11 | レーザリペア方法、レーザリペア装置 |
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US (1) | US20220184729A1 (ja) |
JP (1) | JP2020148804A (ja) |
KR (1) | KR20210136005A (ja) |
CN (1) | CN113518682B (ja) |
WO (1) | WO2020184024A1 (ja) |
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JP7365047B2 (ja) * | 2020-01-14 | 2023-10-19 | 株式会社ブイ・テクノロジー | 表面分析方法、表面分析装置 |
CN115841969B (zh) * | 2022-12-12 | 2023-09-08 | 江苏宜兴德融科技有限公司 | 一种半导体器件激光钝化设备及钝化方法 |
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JP2001298085A (ja) * | 2000-04-12 | 2001-10-26 | Sony Corp | ヒューズ溶断装置及びヒューズ溶断方法 |
JP2006119575A (ja) * | 2004-09-27 | 2006-05-11 | Hitachi Displays Ltd | パターン修正装置および表示装置の製造方法 |
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JP2009271274A (ja) * | 2008-05-07 | 2009-11-19 | Toppan Printing Co Ltd | カラーフィルタ基板の欠陥修正装置および欠陥修正方法 |
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-
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- 2020-02-07 CN CN202080017234.0A patent/CN113518682B/zh active Active
- 2020-02-07 KR KR1020217027234A patent/KR20210136005A/ko not_active Application Discontinuation
- 2020-02-07 WO PCT/JP2020/004877 patent/WO2020184024A1/ja active Application Filing
- 2020-02-07 US US17/438,228 patent/US20220184729A1/en active Pending
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JP2001298085A (ja) * | 2000-04-12 | 2001-10-26 | Sony Corp | ヒューズ溶断装置及びヒューズ溶断方法 |
JP2006119575A (ja) * | 2004-09-27 | 2006-05-11 | Hitachi Displays Ltd | パターン修正装置および表示装置の製造方法 |
JP2008180907A (ja) * | 2007-01-24 | 2008-08-07 | Dainippon Printing Co Ltd | レーザ光による欠陥修正方法 |
JP2009163056A (ja) * | 2008-01-08 | 2009-07-23 | Pioneer Electronic Corp | ディスプレイパネルにおける欠陥表示セルのリペア方法 |
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JP2011099875A (ja) * | 2011-02-18 | 2011-05-19 | Olympus Corp | 外観検査装置 |
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Publication number | Publication date |
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CN113518682A (zh) | 2021-10-19 |
KR20210136005A (ko) | 2021-11-16 |
CN113518682B (zh) | 2024-03-01 |
US20220184729A1 (en) | 2022-06-16 |
WO2020184024A1 (ja) | 2020-09-17 |
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