JP2020113709A5 - - Google Patents

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Publication number
JP2020113709A5
JP2020113709A5 JP2019005484A JP2019005484A JP2020113709A5 JP 2020113709 A5 JP2020113709 A5 JP 2020113709A5 JP 2019005484 A JP2019005484 A JP 2019005484A JP 2019005484 A JP2019005484 A JP 2019005484A JP 2020113709 A5 JP2020113709 A5 JP 2020113709A5
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JP
Japan
Prior art keywords
sense
cell region
main
body layer
contact trench
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Application number
JP2019005484A
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English (en)
Japanese (ja)
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JP2020113709A (ja
JP7092044B2 (ja
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Priority to JP2019005484A priority Critical patent/JP7092044B2/ja
Priority claimed from JP2019005484A external-priority patent/JP7092044B2/ja
Priority to CN202080009119.9A priority patent/CN113302732B/zh
Priority to PCT/JP2020/000489 priority patent/WO2020149211A1/ja
Publication of JP2020113709A publication Critical patent/JP2020113709A/ja
Publication of JP2020113709A5 publication Critical patent/JP2020113709A5/ja
Priority to US17/373,869 priority patent/US11923452B2/en
Application granted granted Critical
Publication of JP7092044B2 publication Critical patent/JP7092044B2/ja
Active legal-status Critical Current
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JP2019005484A 2019-01-16 2019-01-16 半導体装置 Active JP7092044B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019005484A JP7092044B2 (ja) 2019-01-16 2019-01-16 半導体装置
CN202080009119.9A CN113302732B (zh) 2019-01-16 2020-01-09 半导体装置
PCT/JP2020/000489 WO2020149211A1 (ja) 2019-01-16 2020-01-09 半導体装置
US17/373,869 US11923452B2 (en) 2019-01-16 2021-07-13 Semiconductor device having semiconductor switching element in sense cell region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019005484A JP7092044B2 (ja) 2019-01-16 2019-01-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2020113709A JP2020113709A (ja) 2020-07-27
JP2020113709A5 true JP2020113709A5 (enrdf_load_stackoverflow) 2021-04-22
JP7092044B2 JP7092044B2 (ja) 2022-06-28

Family

ID=71613873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019005484A Active JP7092044B2 (ja) 2019-01-16 2019-01-16 半導体装置

Country Status (4)

Country Link
US (1) US11923452B2 (enrdf_load_stackoverflow)
JP (1) JP7092044B2 (enrdf_load_stackoverflow)
CN (1) CN113302732B (enrdf_load_stackoverflow)
WO (1) WO2020149211A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021008194T5 (de) * 2021-09-08 2024-07-25 Mitsubishi Electric Corporation Halbleitervorrichtung
CN119092488B (zh) * 2024-11-06 2025-04-01 杭州士兰集昕微电子有限公司 半导体器件及其制造方法、半导体器件的设计方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5098264B2 (ja) * 2006-09-21 2012-12-12 株式会社デンソー Ｍｏｓ型パワー素子を有する半導体装置およびそれを備えた点火装置
JP2008235788A (ja) 2007-03-23 2008-10-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP5481030B2 (ja) * 2008-01-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
JP5375270B2 (ja) * 2009-03-31 2013-12-25 トヨタ自動車株式会社 半導体装置
US8411471B2 (en) * 2010-06-18 2013-04-02 Infineon Technologies Ag Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
CN104471710A (zh) * 2012-07-20 2015-03-25 三菱电机株式会社 半导体装置及其制造方法
US8928066B2 (en) 2013-02-04 2015-01-06 Infineon Technologies Austria Ag Integrated circuit with power and sense transistors
JP6568735B2 (ja) * 2015-07-17 2019-08-28 日立オートモティブシステムズ株式会社 スイッチ素子及び負荷駆動装置
JP6589845B2 (ja) 2016-12-21 2019-10-16 株式会社デンソー 半導体装置
JP6722101B2 (ja) * 2016-12-27 2020-07-15 ルネサスエレクトロニクス株式会社 半導体装置および過電流保護装置
JP6696450B2 (ja) * 2017-01-27 2020-05-20 株式会社デンソー 炭化珪素半導体装置
JP6693438B2 (ja) 2017-02-15 2020-05-13 株式会社デンソー 半導体装置
WO2019106948A1 (ja) * 2017-11-30 2019-06-06 住友電気工業株式会社 ゲート絶縁型トランジスタ
JP6828697B2 (ja) * 2018-02-06 2021-02-10 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体装置およびｉｉｉ族窒化物半導体基板の製造方法
US10600905B1 (en) * 2018-09-11 2020-03-24 Semiconductor Components Industries, Llc Trench MOSFET contacts

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