JP2015057850A5 - - Google Patents

Download PDF

Info

Publication number
JP2015057850A5
JP2015057850A5 JP2014233404A JP2014233404A JP2015057850A5 JP 2015057850 A5 JP2015057850 A5 JP 2015057850A5 JP 2014233404 A JP2014233404 A JP 2014233404A JP 2014233404 A JP2014233404 A JP 2014233404A JP 2015057850 A5 JP2015057850 A5 JP 2015057850A5
Authority
JP
Japan
Prior art keywords
well
well region
insulating film
region
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014233404A
Other languages
English (en)
Japanese (ja)
Other versions
JP6008145B2 (ja
JP2015057850A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014233404A priority Critical patent/JP6008145B2/ja
Priority claimed from JP2014233404A external-priority patent/JP6008145B2/ja
Publication of JP2015057850A publication Critical patent/JP2015057850A/ja
Publication of JP2015057850A5 publication Critical patent/JP2015057850A5/ja
Application granted granted Critical
Publication of JP6008145B2 publication Critical patent/JP6008145B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014233404A 2010-06-30 2014-11-18 電力用半導体装置 Active JP6008145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014233404A JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010149090 2010-06-30
JP2010149090 2010-06-30
JP2014233404A JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012522420A Division JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2015057850A JP2015057850A (ja) 2015-03-26
JP2015057850A5 true JP2015057850A5 (enrdf_load_stackoverflow) 2015-07-23
JP6008145B2 JP6008145B2 (ja) 2016-10-19

Family

ID=45401589

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012522420A Active JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置
JP2014233404A Active JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2012522420A Active JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Country Status (2)

Country Link
JP (2) JP5692227B2 (enrdf_load_stackoverflow)
WO (1) WO2012001837A1 (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5994604B2 (ja) * 2012-11-28 2016-09-21 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2014162969A1 (ja) * 2013-04-03 2014-10-09 三菱電機株式会社 半導体装置
US9231091B2 (en) * 2014-05-12 2016-01-05 Infineon Technologies Ag Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
US10128370B2 (en) 2014-10-01 2018-11-13 Mitsubishi Electric Corporation Semiconductor device
DE112016006723B4 (de) * 2016-04-11 2024-12-12 Mitsubishi Electric Corporation Halbleitereinrichtung
CN109564942B (zh) * 2016-08-25 2022-02-11 三菱电机株式会社 半导体装置
EP3712958A4 (en) * 2017-11-13 2021-06-30 Shindengen Electric Manufacturing Co., Ltd. Wide gap semiconductor device
CN111373546B (zh) 2017-11-13 2023-12-29 新电元工业株式会社 宽带隙半导体装置
US11342435B2 (en) 2017-12-14 2022-05-24 Shindengen Electric Manufacturing Co., Ltd. Wide-gap semiconductor device
JP7113221B2 (ja) 2018-02-08 2022-08-05 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP6994991B2 (ja) * 2018-03-16 2022-02-04 株式会社 日立パワーデバイス 半導体装置、パワーモジュールおよび電力変換装置
US11309415B2 (en) 2018-03-29 2022-04-19 Shindengen Electric Manufacturing Co., Ltd. Wide gap semiconductor device
JP7310144B2 (ja) * 2019-01-10 2023-07-19 富士電機株式会社 炭化珪素半導体装置
JP2020036045A (ja) * 2019-11-29 2020-03-05 ローム株式会社 半導体装置
CN111564497B (zh) * 2020-04-30 2023-04-18 西安理工大学 一种具有非均匀体二极管的SiC MOSFET器件
CN112768447B (zh) * 2021-01-11 2024-11-12 杭州士兰集昕微电子有限公司 逆导型绝缘栅双极型晶体管及其制造方法
IT202100003653A1 (it) 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20250089316A1 (en) * 2023-09-13 2025-03-13 Wolfspeed, Inc. Power Semiconductor Device with Balancing Shunt Structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785271B2 (ja) * 1988-04-28 1998-08-13 富士電機株式会社 半導体装置
JP2950569B2 (ja) * 1990-03-01 1999-09-20 株式会社東芝 Ｍｏｓ型電界効果トランジスタ
JP2858404B2 (ja) * 1990-06-08 1999-02-17 株式会社デンソー 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH05343692A (ja) * 1992-06-09 1993-12-24 Nec Corp 縦型電界効果トランジスタ
JP2870402B2 (ja) * 1994-03-10 1999-03-17 株式会社デンソー 絶縁ゲート型電界効果トランジスタ
JPH08102495A (ja) * 1994-09-30 1996-04-16 Toshiba Corp 半導体装置
JP2000294770A (ja) * 1999-04-09 2000-10-20 Rohm Co Ltd 半導体装置
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4577480B2 (ja) * 2003-06-06 2010-11-10 サンケン電気株式会社 絶縁ゲート型半導体装置
JP2005243674A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置
JP4286877B2 (ja) * 2007-03-13 2009-07-01 Ｏｋｉセミコンダクタ株式会社 炭化珪素半導体装置およびその製造方法
JP4683075B2 (ja) * 2008-06-10 2011-05-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2015057850A5 (enrdf_load_stackoverflow)
JP2014225713A5 (enrdf_load_stackoverflow)
JP2019054071A5 (enrdf_load_stackoverflow)
JP2013115433A5 (ja) 半導体素子
JP2014197211A5 (enrdf_load_stackoverflow)
JP2016506081A5 (enrdf_load_stackoverflow)
JP2018061001A5 (ja) トランジスタ
JP2016195267A5 (enrdf_load_stackoverflow)
JP2013165132A5 (enrdf_load_stackoverflow)
JP2014099595A5 (enrdf_load_stackoverflow)
JP2016028434A5 (enrdf_load_stackoverflow)
JP2017175129A5 (ja) 半導体装置
EP2755237A3 (en) Trench MOS gate semiconductor device and method of fabricating the same
JP2015005734A5 (enrdf_load_stackoverflow)
JP2014033200A5 (enrdf_load_stackoverflow)
JP2012235153A5 (enrdf_load_stackoverflow)
JP2015073101A5 (ja) 半導体装置
JP2011054949A5 (ja) 半導体装置
JP2016529720A5 (enrdf_load_stackoverflow)
JP2011181917A5 (enrdf_load_stackoverflow)
JP2016036021A5 (ja) 導電体の作製方法、半導体装置の作製方法
JP2012256877A5 (ja) 半導体装置の作製方法、及び半導体装置
JP2018504778A5 (enrdf_load_stackoverflow)
JP2014139967A5 (enrdf_load_stackoverflow)
JP2015005730A5 (enrdf_load_stackoverflow)