JP2022009745A5 - - Google Patents

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Publication number
JP2022009745A5
JP2022009745A5 JP2021177652A JP2021177652A JP2022009745A5 JP 2022009745 A5 JP2022009745 A5 JP 2022009745A5 JP 2021177652 A JP2021177652 A JP 2021177652A JP 2021177652 A JP2021177652 A JP 2021177652A JP 2022009745 A5 JP2022009745 A5 JP 2022009745A5
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JP
Japan
Prior art keywords
silicon carbide
type
electrode
conductive layers
semiconductor device
Prior art date
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Application number
JP2021177652A
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English (en)
Japanese (ja)
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JP2022009745A (ja
JP7196265B2 (ja
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Priority claimed from JP2020002709A external-priority patent/JP2020074426A/ja
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Priority to JP2021177652A priority Critical patent/JP7196265B2/ja
Priority claimed from JP2021177652A external-priority patent/JP7196265B2/ja
Publication of JP2022009745A publication Critical patent/JP2022009745A/ja
Publication of JP2022009745A5 publication Critical patent/JP2022009745A5/ja
Application granted granted Critical
Publication of JP7196265B2 publication Critical patent/JP7196265B2/ja
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JP2021177652A 2020-01-10 2021-10-29 半導体装置 Active JP7196265B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021177652A JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020002709A JP2020074426A (ja) 2020-01-10 2020-01-10 半導体装置
JP2021177652A JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2020002709A Division JP2020074426A (ja) 2020-01-10 2020-01-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2022009745A JP2022009745A (ja) 2022-01-14
JP2022009745A5 true JP2022009745A5 (enrdf_load_stackoverflow) 2022-05-17
JP7196265B2 JP7196265B2 (ja) 2022-12-26

Family

ID=87699511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021177652A Active JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

Country Status (1)

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JP (1) JP7196265B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117497600B (zh) * 2023-12-28 2024-05-07 深圳天狼芯半导体有限公司 超结碳化硅晶体管的结构、制造方法及电子设备
CN119584607B (zh) * 2025-02-07 2025-05-30 深圳天狼芯半导体有限公司 改善反向恢复特性的mosfet及其制备方法、芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
JP3272242B2 (ja) * 1995-06-09 2002-04-08 三洋電機株式会社 半導体装置
US6351018B1 (en) 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
JP4742539B2 (ja) 2004-08-30 2011-08-10 日産自動車株式会社 半導体装置
JP5636752B2 (ja) 2010-06-15 2014-12-10 日産自動車株式会社 半導体装置及びその製造方法
JP2014086431A (ja) 2012-10-19 2014-05-12 Nissan Motor Co Ltd 半導体装置及びその製造方法

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