JP7196265B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7196265B2 JP7196265B2 JP2021177652A JP2021177652A JP7196265B2 JP 7196265 B2 JP7196265 B2 JP 7196265B2 JP 2021177652 A JP2021177652 A JP 2021177652A JP 2021177652 A JP2021177652 A JP 2021177652A JP 7196265 B2 JP7196265 B2 JP 7196265B2
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- silicon carbide
- electrode
- gate
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 171
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 167
- 239000012535 impurity Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 148
- 230000006866 deterioration Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000009471 action Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021177652A JP7196265B2 (ja) | 2020-01-10 | 2021-10-29 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020002709A JP2020074426A (ja) | 2020-01-10 | 2020-01-10 | 半導体装置 |
| JP2021177652A JP7196265B2 (ja) | 2020-01-10 | 2021-10-29 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020002709A Division JP2020074426A (ja) | 2020-01-10 | 2020-01-10 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022009745A JP2022009745A (ja) | 2022-01-14 |
| JP2022009745A5 JP2022009745A5 (enrdf_load_stackoverflow) | 2022-05-17 |
| JP7196265B2 true JP7196265B2 (ja) | 2022-12-26 |
Family
ID=87699511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021177652A Active JP7196265B2 (ja) | 2020-01-10 | 2021-10-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7196265B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497600B (zh) * | 2023-12-28 | 2024-05-07 | 深圳天狼芯半导体有限公司 | 超结碳化硅晶体管的结构、制造方法及电子设备 |
| CN119584607B (zh) * | 2025-02-07 | 2025-05-30 | 深圳天狼芯半导体有限公司 | 改善反向恢复特性的mosfet及其制备方法、芯片 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538602A (ja) | 1999-02-26 | 2002-11-12 | フェアチャイルド セミコンダクター コーポレイション | モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード |
| JP2006066770A (ja) | 2004-08-30 | 2006-03-09 | Nissan Motor Co Ltd | 半導体装置 |
| JP2012004197A (ja) | 2010-06-15 | 2012-01-05 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
| JP2014086431A (ja) | 2012-10-19 | 2014-05-12 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111253A (en) * | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
| JP3272242B2 (ja) * | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | 半導体装置 |
-
2021
- 2021-10-29 JP JP2021177652A patent/JP7196265B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538602A (ja) | 1999-02-26 | 2002-11-12 | フェアチャイルド セミコンダクター コーポレイション | モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード |
| JP2006066770A (ja) | 2004-08-30 | 2006-03-09 | Nissan Motor Co Ltd | 半導体装置 |
| JP2012004197A (ja) | 2010-06-15 | 2012-01-05 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
| JP2014086431A (ja) | 2012-10-19 | 2014-05-12 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
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| Publication number | Publication date |
|---|---|
| JP2022009745A (ja) | 2022-01-14 |
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